Surface emitting laser and surface emitting laser array
    1.
    发明授权
    Surface emitting laser and surface emitting laser array 有权
    表面发射激光器和表面发射激光器阵列

    公开(公告)号:US06590917B2

    公开(公告)日:2003-07-08

    申请号:US09321711

    申请日:1999-05-28

    IPC分类号: H01S520

    摘要: A surface emitting laser and a surface emitting laser array capable of high-luminance optical output in fundamental transverse mode, which can be produced easily with good reproducibility and with small position variation. The surface emitting laser has an active layer region composed of an active layer and upper and lower spacer layers deposited on both sides thereof and reflection layers deposited on both sides of the active layer region, an upper reflecting layer deposited on the upper spacer layer of the active layer region, a lower reflecting layer deposited on the lower spacer layer of the active layer region, and a secondary cavity formed by a first mode control layer and a second mode control layer placed on the periphery of the region of emission of the laser beam at the upper reflecting layer.

    摘要翻译: 表面发射激光器和表面发射激光器阵列,其能够在基本横向模式下具有高亮度光学输出,其可以容易地以良好的再现性和小的位置变化产生。表面发射激光器具有由有源层 并且沉积在其两侧上的上隔离层和下间隔层以及沉积在有源层区两侧的反射层,沉积在有源层区的上间隔层上的上反射层,沉积在下间隔层上的下反射层 以及由位于上反射层的激光束的发射区域的周围的第一模式控制层和第二模式控制层形成的次级空腔。

    Vertical cavity surface emitting laser, vertical cavity surface emitting laser apparatus, optical transmission apparatus, and information processing apparatus
    3.
    发明授权
    Vertical cavity surface emitting laser, vertical cavity surface emitting laser apparatus, optical transmission apparatus, and information processing apparatus 有权
    垂直腔面发射激光器,垂直腔面发射激光装置,光传输装置和信息处理装置

    公开(公告)号:US09166370B2

    公开(公告)日:2015-10-20

    申请号:US13456909

    申请日:2012-04-26

    摘要: A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.

    摘要翻译: 垂直腔表面发射激光器包括第一半导体多层反射器,谐振器和第二半导体多层反射器。 第一半导体多层反射器形成在基板上,并且通过堆叠具有较高折射率的高折射率层和折射率相对较低的低折射率层而构成。 谐振器包括形成在第一半导体多层反射器上的有源层。 第二半导体多层反射器通过层叠高折射率层和低折射率层而构成。 谐振器包括垂直于有源层设置的一对间隔层和形成在一对间隔层的一侧的谐振器延伸区域。 谐振器延伸区域包含其中具有晶体缺陷的能级高于没有晶体缺陷的一般能级的材料。

    METHOD FOR DRIVING SURFACE EMITTING SEMICONDUCTOR LASER, OPTICAL TRANSMISSION MODULE, AND HANDHELD ELECTRONIC DEVICE
    4.
    发明申请
    METHOD FOR DRIVING SURFACE EMITTING SEMICONDUCTOR LASER, OPTICAL TRANSMISSION MODULE, AND HANDHELD ELECTRONIC DEVICE 有权
    驱动表面发射半导体激光器,光传输模块和手持式电子设备的方法

    公开(公告)号:US20090016732A1

    公开(公告)日:2009-01-15

    申请号:US12036570

    申请日:2008-02-25

    IPC分类号: H04B10/00 H01S5/042

    摘要: Provided is a method for driving a surface emitting semiconductor laser including an active region that generates light, a resonator structure disposed such that it sandwiches the active region, and a driving electrode that provides power to the active region. The surface emitting semiconductor laser has an internal resistance defined by voltage and current applied to the driving electrode. The method includes applying a modulation signal to the driving electrode, in which the modulation signal has a current amplitude defined by a first current value and a second current value that is greater than the first current value. The modulation signal is in a negative gradient region in which the internal resistance decreases in contrast to the increase of the current.

    摘要翻译: 提供了一种用于驱动表面发射半导体激光器的方法,所述表面发射半导体激光器包括产生光的有源区,设置成使其夹持有源区的谐振器结构以及向有源区提供电力的驱动电极。 表面发射半导体激光器具有由施加到驱动电极的电压和电流限定的内部电阻。 该方法包括将调制信号施加到驱动电极,其中调制信号具有由第一电流值定义的电流幅度和大于第一电流值的第二电流值。 与电流增加相反,调制信号处于负梯度区域,其中内阻减小。

    Method for driving surface emitting semiconductor laser, optical transmission module, and handheld electronic device
    6.
    发明授权
    Method for driving surface emitting semiconductor laser, optical transmission module, and handheld electronic device 有权
    用于驱动表面发射半导体激光器,光传输模块和手持电子设备的方法

    公开(公告)号:US08023539B2

    公开(公告)日:2011-09-20

    申请号:US12036570

    申请日:2008-02-25

    IPC分类号: H01S3/10 H01S3/13 H01S3/00

    摘要: Provided is a method for driving a surface emitting semiconductor laser including an active region that generates light, a resonator structure disposed such that it sandwiches the active region, and a driving electrode that provides power to the active region. The surface emitting semiconductor laser has an internal resistance defined by voltage and current applied to the driving electrode. The method includes applying a modulation signal to the driving electrode, in which the modulation signal has a current amplitude defined by a first current value and a second current value that is greater than the first current value. The modulation signal is in a negative gradient region in which the internal resistance decreases in contrast to the increase of the current.

    摘要翻译: 提供了一种用于驱动表面发射半导体激光器的方法,所述表面发射半导体激光器包括产生光的有源区,设置成使其夹持有源区的谐振器结构以及向有源区提供电力的驱动电极。 表面发射半导体激光器具有由施加到驱动电极的电压和电流限定的内部电阻。 该方法包括将调制信号施加到驱动电极,其中调制信号具有由第一电流值定义的电流幅度和大于第一电流值的第二电流值。 与电流增加相反,调制信号处于负梯度区域,其中内阻减小。

    Apparatus for fabricating surface emitting semiconductor laser
    7.
    发明授权
    Apparatus for fabricating surface emitting semiconductor laser 有权
    用于制造表面发射半导体激光器的装置

    公开(公告)号:US07079562B2

    公开(公告)日:2006-07-18

    申请号:US11105464

    申请日:2005-04-14

    IPC分类号: H01S5/00

    摘要: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

    摘要翻译: 一种制造表面发射半导体激光器的方法包括:第一步骤,在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层,以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤,在激光部中形成选择性氧化区域时,在多个监视用半导体层上监测氧化条件的第二工序,以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

    Surface emitting semiconductor laser, and method and apparatus for fabricating the same
    8.
    发明授权
    Surface emitting semiconductor laser, and method and apparatus for fabricating the same 有权
    表面发射半导体激光器及其制造方法和装置

    公开(公告)号:US07078257B2

    公开(公告)日:2006-07-18

    申请号:US10384607

    申请日:2003-03-11

    IPC分类号: H01L21/00

    摘要: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

    摘要翻译: 一种制造表面发射半导体激光器的方法包括:第一步骤,在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层,以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤,在激光部中形成选择性氧化区域时,在多个监视用半导体层上监测氧化条件的第二工序,以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

    Surface emitting semiconductor laser
    9.
    发明申请
    Surface emitting semiconductor laser 有权
    表面发射半导体激光器

    公开(公告)号:US20050180476A1

    公开(公告)日:2005-08-18

    申请号:US11105450

    申请日:2005-04-14

    摘要: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

    摘要翻译: 一种制造表面发射半导体激光器的方法包括:第一步骤,在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层,以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤,在激光部中形成选择性氧化区域时,在多个监视用半导体层上监测氧化条件的第二工序,以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

    Surface emitting semiconductor laser, and method and apparatus for fabricating the same
    10.
    发明申请
    Surface emitting semiconductor laser, and method and apparatus for fabricating the same 审中-公开
    表面发射半导体激光器及其制造方法和装置

    公开(公告)号:US20050185688A1

    公开(公告)日:2005-08-25

    申请号:US11111717

    申请日:2005-04-22

    摘要: A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer of a first conduction type, an active region, a III-V semiconductor layer containing Al, and a second reflection mirror layer of a second conduction type, the second laminate being used for monitoring and having an oxidizable region. The first and second laminates are etched so as to form mesas on the substrate in which side surface of the III-V semiconductor layer contained in the first laminate is exposed. Oxidization of the III-V semiconductor layer from the side surface is started at an oxidization rate. During oxidization, a reflectance of the second laminate for monitoring or its variation is monitored, and oxidization of the III-V semiconductor layer is terminated after a constant time from a time when the reflectance or its variation reaches a corresponding given value.

    摘要翻译: 制造表面发射半导体激光器的方法包括以下步骤。 半导体层的第一层叠体和半导体层的第二层叠体形成在基板上。 第一层压体包括第一导电类型的第一反射镜层,有源区,含有Al的III-V半导体层和第二导电类型的第二反射镜层,第二层压板用于监测并具有 可氧化区域。 对第一和​​第二层压体进行蚀刻,以在第一层压体中包含的III-V半导体层的侧表面露出的基板上形成台面。 从侧面氧化III-V半导体层以氧化速率开始。 在氧化期间,监测用于监测或其变化的第二层压体的反射率,并且在从反射率或其变化达到相应给定值的时间起经过恒定时间之后,III-V半导体层的氧化终止。