公开(公告)号：US09759840B2

公开(公告)日：2017-09-12

申请号：US12871259

申请日：2010-08-30

申请人： Hidetoshi Takahashi ,  Fumihiko Iida ,  Hiroyuki Kiso ,  Yu Nomura ,  Hiroshi Tazawa ,  Ryo Nishimura

发明人： Hidetoshi Takahashi ,  Fumihiko Iida ,  Hiroyuki Kiso ,  Yu Nomura ,  Hiroshi Tazawa ,  Ryo Nishimura

IPC分类号： G02B1/11 ,  G02B1/118 ,  G02B27/00

CPC分类号： G02B1/118 ,  G02B1/18 ,  G02B27/0006

摘要： An optical element with an antireflection function is provided with a substrate having a surface and a plurality of structures formed from convex portions or concave portions and arranged in large numbers on the surface of the substrate with a minute pitch less than or equal to the wavelength of the visible light, wherein the modulus of elasticity of the material forming the structures is 1 MPa or more, and 1,200 MPa or less, and the aspect ratio of the structure is 0.6 or more, and 1.5 or less.

公开(公告)号：US20110128629A1

公开(公告)日：2011-06-02

申请号：US12871259

申请日：2010-08-30

申请人： Hidetoshi Takahashi ,  Fumihiko Iida ,  Hiroyuki Kiso ,  Yu Nomura ,  Hiroshi Tazawa ,  Ryo Nishimura

发明人： Hidetoshi Takahashi ,  Fumihiko Iida ,  Hiroyuki Kiso ,  Yu Nomura ,  Hiroshi Tazawa ,  Ryo Nishimura

IPC分类号： G02B1/11

CPC分类号： G02B1/118 ,  G02B1/18 ,  G02B27/0006

摘要： An optical element with an antireflection function is provided with a substrate having a surface and a plurality of structures formed from convex portions or concave portions and arranged in large numbers on the surface of the substrate with a minute pitch less than or equal to the wavelength of the visible light, wherein the modulus of elasticity of the material forming the structures is 1 MPa or more, and 1,200 MPa or less, and the aspect ratio of the structure is 0.6 or more, and 1.5 or less.

摘要翻译： 具有防反射功能的光学元件设置有具有由凸部或凹部形成的表面和多个结构的基板，并且以小间距小于等于基板的表面的微小间距配置在基板的表面上 可见光，其中形成结构的材料的弹性模量为1MPa以上，1200MPa以下，长宽比为0.6以上，1.5以下。

公开(公告)号：US20120243097A1

公开(公告)日：2012-09-27

申请号：US13423934

申请日：2012-03-19

申请人： Kazuya Hayashibe ,  Yutaka Muramoto ,  Hiroshi Tazawa ,  Shunichi Kajiya ,  Yu Nomura ,  Sohmei Endoh ,  Takashi Mabuchi

发明人： Kazuya Hayashibe ,  Yutaka Muramoto ,  Hiroshi Tazawa ,  Shunichi Kajiya ,  Yu Nomura ,  Sohmei Endoh ,  Takashi Mabuchi

IPC分类号： G02B5/02 ,  B23P17/04

CPC分类号： G02B1/118 ,  Y10T29/54

摘要： An optical system includes an optical element that has a surface on which a plurality of sub-wavelength structure bodies are formed; and an imaging device that has an imaging region which senses light via the optical element, wherein the surface of the optical element has one or two or more sections that scatter incident light and generate scattered light, and wherein a sum total of components of the scattered light reaching the imaging region is smaller than a sum total of components thereof reaching regions other than the imaging region.

摘要翻译： 一种光学系统包括具有其上形成有多个亚波长结构体的表面的光学元件; 以及具有经由所述光学元件感测光的摄像区域的成像装置，其中，所述光学元件的表面具有散射入射光并产生散射光的一个或两个以上的部分，并且其中散射的成分的总和 到达成像区域的光小于其成像区域以外的分量的总和的总和。

公开(公告)号：US09945984B2

公开(公告)日：2018-04-17

申请号：US13423934

申请日：2012-03-19

申请人： Kazuya Hayashibe ,  Yutaka Muramoto ,  Hiroshi Tazawa ,  Shunichi Kajiya ,  Yu Nomura ,  Sohmei Endoh ,  Takashi Mabuchi

发明人： Kazuya Hayashibe ,  Yutaka Muramoto ,  Hiroshi Tazawa ,  Shunichi Kajiya ,  Yu Nomura ,  Sohmei Endoh ,  Takashi Mabuchi

IPC分类号： G02B1/118

CPC分类号： G02B1/118 ,  Y10T29/54

摘要： An optical system includes an optical element and an imaging device. The optical element has a surface on which a plurality of sub-wavelength structure bodies are formed. The imaging device has an imaging region which senses light via the optical element. The surface of the optical element has one or two or more sections that scatter incident light and generate scattered light. A sum total of components of the scattered light reaching the imaging region is smaller than a sum total of components thereof reaching regions other than the imaging region.

公开(公告)号：US09603257B2

公开(公告)日：2017-03-21

申请号：US13879778

申请日：2011-10-14

申请人： Hiroshi Tazawa ,  Kazuya Hayashibe

发明人： Hiroshi Tazawa ,  Kazuya Hayashibe

IPC分类号： H05K1/03 ,  H05K3/12 ,  H01L21/48 ,  H05K1/02 ,  G06F3/041 ,  H01L27/32 ,  H01L51/00 ,  H05K1/09 ,  G02F1/1333

CPC分类号： H05K3/1283 ,  G02F1/1333 ,  G02F2001/133302 ,  G06F3/041 ,  G06F2203/04103 ,  H01L21/4867 ,  H01L27/3288 ,  H01L51/0021 ,  H05K1/02 ,  H05K1/095 ,  H05K3/1258

摘要： A pattern substrate includes a substrate having a surface on which a first area and a second area are formed, and a pattern layer formed at the first area among the first area and the second area. The pattern layer is a wiring pattern layer or a transparent electrode, the first area has a convex/concave shape where a capillary phenomenon occurs, and the convex/concave shape includes an aggregate of a plurality of structures.

公开(公告)号：US09116289B2

公开(公告)日：2015-08-25

申请号：US13091603

申请日：2011-04-21

申请人： Hiroshi Tazawa ,  Shunichi Kajiya ,  Kazuya Hayashibe ,  Sohmei Endoh

发明人： Hiroshi Tazawa ,  Shunichi Kajiya ,  Kazuya Hayashibe ,  Sohmei Endoh

IPC分类号： B32B3/28 ,  B32B3/30 ,  G02B1/118

CPC分类号： G02B1/118 ,  G02B2207/121 ,  Y10T428/24521 ,  Y10T428/24529 ,  Y10T428/24545 ,  Y10T428/24612

摘要： A transparent conductive element is provided and includes a conductive layer having a first surface and a second surface and a medium layer formed on at least one of the first surface and the second surface. In the transparent conductive element, at least one of the first surface and the second surface is a wave surface with a wavelength shorter than or equal to that of visible light; the ratio (Am/λm) of a mean peak-to-peak amplitude Am to a mean wavelength λm of the wave surface is 1.8 or less. The mean thickness Dm of the conductive layer is larger than the mean peak-to-peak amplitude Am of the wave surface.

摘要翻译： 提供透明导电元件，并且包括具有第一表面和第二表面的导电层和形成在第一表面和第二表面中的至少一个上的介质层。 在透明导电元件中，第一表面和第二表面中的至少一个是波长短于或等于可见光的波长表面; 平均峰 - 峰幅度Am与波表面的平均波长λm的比（Am /λm）为1.8以下。 导电层的平均厚度Dm大于波面的平均峰 - 峰幅度Am。

公开(公告)号：US20110002041A1

公开(公告)日：2011-01-06

申请号：US12822895

申请日：2010-06-24

申请人： Hiroshi Tazawa

发明人： Hiroshi Tazawa

IPC分类号： G02B1/11 ,  B29D11/00

CPC分类号： G02B1/118

摘要： An optical element having an anti-reflection function includes a base having a main surface, and a plurality of projecting or recessed structures arranged on the main surface of the base at a fine pitch equal to or less than the wavelength of visible light, wherein the main surface of the base, the main surface having the structures thereon, has hydrophilicity, and a contact angle of the main surface of the base, the main surface having the structures thereon, to pure water is 30° or less.

摘要翻译： 具有防反射功能的光学元件包括具有主表面的基底和以等于或小于可见光波长的微细间距布置在基底主表面上的多个突出或凹陷结构，其中， 基体的主表面，其上具有结构的主表面具有亲水性，并且基体的主表面，其上具有结构的主表面与纯水的接触角为30°以下。

公开(公告)号：US5773888A

公开(公告)日：1998-06-30

申请号：US555392

申请日：1995-11-09

申请人： Eiichi Hosomi ,  Chiaki Takubo ,  Hiroshi Tazawa ,  Koji Shibasaki

发明人： Eiichi Hosomi ,  Chiaki Takubo ,  Hiroshi Tazawa ,  Koji Shibasaki

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L29/41

CPC分类号： H01L24/13 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/14104 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181

摘要： A semiconductor device having bump electrodes, each having a structure wherein an alloy layer such as Au--Sn formed by the reaction between the Sn-plated layer on the surface of the inner lead and the bump electrode never reach the bottom surface of the passivation opening portion, is provided. The center of the passivation opening portion is displaced apart from the center of an electrode pad to a direction toward the center of the semiconductor substrate. The center of the passivation opening portion is displaced away from the outer lead and close to the tip end of the inner lead in contrast to the center of the bump electrode. By positioning the passivation opening portion such that the center thereof is located nearer to the center of semiconductor substrate than a center of the bump electrode, without changing the height of the bump electrode or the size of the passivation opening portion, the Au--Sn alloy etc. caused by the reaction between the Sn-plated layer of the inner lead and the metal layer of the bump electrode can be prevented from reaching the passivation opening portion.

摘要翻译： 具有凸起电极的半导体器件，每个具有这样的结构，其中通过内引线表面上的Sn镀层与凸块电极之间的反应形成的诸如Au-Sn的合金层不会到达钝化开口的底表面 部分。 钝化开口部分的中心从电极焊盘的中心偏离朝向半导体衬底的中心的方向。 与凸起电极的中心相比，钝化开口部分的中心远离外部引线移动并且靠近内部引线的尖端。 通过将钝化开口部分定位成使得其中心位于比突起电极的中心更靠近半导体衬底的中心的位置，而不改变突起电极的高度或钝化开口部分的尺寸，Au-Sn合金 可以防止由内引线的镀Sn层与凸起电极的金属层之间的反应引起的等等到达钝化开口部分。

公开(公告)号：US5615822A

公开(公告)日：1997-04-01

申请号：US532281

申请日：1995-09-22

申请人： Chiaki Takubo ,  Hiroshi Tazawa ,  Eiichi Hosomi ,  Koji Shibasaki

发明人： Chiaki Takubo ,  Hiroshi Tazawa ,  Eiichi Hosomi ,  Koji Shibasaki

IPC分类号： B23K1/00 ,  H01L21/60 ,  H01L21/603

CPC分类号： H01L24/86 ,  B23K1/0016 ,  B23K2201/36 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/12042

摘要： In this invention, a designed value of a lead width is previously input and a bonding load suitable for the designed lead width is previously input before the step of continuously bonding a TAB tape on a semiconductor chip is effected. Next, the TAB tape and chip are carried to preset positions, and after recognition of the positions of the tape and chip and the alignment of the tape and chip by use of a CCD camera are completed, the inner lead width is actually measured by use of the CCD camera. The measured lead width is compared with the designed lead width, and when a difference therebetween exceeds a preset reference value, the bonding load is changed to a bonding load suitable for the measured lead width of the lead to be actually bonded based on the ratio of the measured lead width to the designed lead width and then the bonding operation is effected by the suitable bonding load.

摘要翻译： 在本发明中，预先输入引线宽度的设计值，并且在进行连续接合半导体芯片上的TAB带的步骤之前，预先输入适合于设计的引线宽度的接合负载。 接下来，TAB带和芯片被携带到预设位置，并且在识别到带和芯片的位置以及通过使用CCD照相机的带和芯片的对准完成之后，实际上通过使用测量内引线宽度 的CCD相机。 将测量的引线宽度与设计的引线宽度进行比较，并且当它们之间的差异超过预设的参考值时，将接合负载改变为适合实际接合的引线的测量引线宽度的接合负载， 测量的引线宽度与设计的引线宽度，然后结合操作由适当的焊接负载来实现。

公开(公告)号：US6049130A

公开(公告)日：2000-04-11

申请号：US853475

申请日：1997-05-09

申请人： Eiichi Hosomi ,  Hiroshi Tazawa ,  Chiaki Takubo ,  Koji Shibasaki

发明人： Eiichi Hosomi ,  Hiroshi Tazawa ,  Chiaki Takubo ,  Koji Shibasaki

IPC分类号： H01L21/60 ,  H01L21/603 ,  H01L23/495 ,  H01L23/50 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L23/49572 ,  H01L23/49582 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2924/0002 ,  H01L2924/01322

摘要： A semiconductor device comprises a semiconductor chip, an Au bump formed on the semiconductor chip, and Cu lead bonded to the Au bump through a bonding part. The Cu lead has a Cu core and a plated Sn layer formed on the Cu core, and the bonding part is formed of an Au-rich Au--Cu--Sn alloy of a ternary system having a single-phase structure containing 15 at. % or less Sn and 25 at. % or less Cu.

摘要翻译： 半导体器件包括半导体芯片，形成在半导体芯片上的Au凸块，以及通过接合部分接合到Au凸块的Cu引线。 Cu引线具有形成在Cu芯上的Cu芯和镀Sn Sn，并且所述接合部由具有包含15at的单相结构的三元体系的富Au Au-Cu-Sn合金形成。 ％以下Sn和25 at。 ％以下Cu。