公开(公告)号：US20090272265A1

公开(公告)日：2009-11-05

申请号：US12225720

申请日：2007-04-04

申请人： Tsutomu Mashimo ,  Masao Ono ,  Xinsheng Huang ,  Yusuke Iguchi ,  Satoru Okayasu ,  Hiroshi Yasuoka ,  Koji Shibasaki ,  Masanori Sueyoshi

发明人： Tsutomu Mashimo ,  Masao Ono ,  Xinsheng Huang ,  Yusuke Iguchi ,  Satoru Okayasu ,  Hiroshi Yasuoka ,  Koji Shibasaki ,  Masanori Sueyoshi

IPC分类号： B01D59/20 ,  B01D59/50

CPC分类号： C23C26/00 ,  B01D59/20 ,  C22F3/00 ,  C23C10/18 ,  C23C10/28 ,  Y10S494/90

摘要： This invention provides a method for separating and enriching isotopes in an efficient and low-cost manner from a condensation-system (liquid or/and solid) material comprising two or more different isotopes by taking advantage of the sedimentation of atoms through an acceleration field by ultra-high speed rotation. A condensation-system (liquid or/and solid) material (5) comprising the two or more isotopes is placed in a sedimentation tank (for example, 2) which is then housed in a supercentrifuge. The supercentrifuge in its rotor is rotation driven by an ultra-high speed rotation power source, and an acceleration field of energy of 100000 G to 1500000 G, i.e., about 100 to 800 m/s in terms of peripheral velocity, is applied to the above condensed (liquid or/and solid) material under such a temperature that is specified by an isotope material to be enriched. In this case, a difference in centrifugal force applied is provided between the isotopes in the condensed (liquid or/and solid) material comprising the at least two isotopes. By virtue of sedimentation by taking advantage of this difference, isotope atoms within the condensed material interact, and, consequently, separation and enrichment of the isotopes can be realized in a higher efficiency than the case where gas is used, by conducting the separation and enrichment of the isotopes within the liquid material, using an effective material, and using a multistaged rotor system.

摘要翻译： 本发明提供了一种以有效和低成本的方式从包含两种或多种不同同位素的冷凝系统（液体或/或固体）材料中分离富集同位素的方法，其利用原子通过加速场的沉降 超高速旋转。 将包含两种或更多种同位素的冷凝系统（液体或/和固体）材料（5）放置在沉淀池（例如2）中，然后将其容纳在超级离心机中。 其转子中的超级离心机由超高速旋转动力源旋转驱动，并且对于圆周速度而言，能量为100000G至1500000G的加速度场，即约100至800m / s 上述冷凝（液体或/和固体）材料在由待富集的同位素材料规定的温度下进行。 在这种情况下，在包含至少两个同位素的冷凝（液体或/和固体）材料中的同位素之间提供了离心力的差异。 通过利用这种差异的沉淀，冷凝材料内的同位素原子相互作用，因此，与使用气体的情况相比，可以通过进行分离和富集而以更高的效率实现同位素的分离和富集 的液体材料中的同位素，使用有效材料，并使用多级转子系统。

公开(公告)号：US06615670B2

公开(公告)日：2003-09-09

申请号：US10067396

申请日：2002-02-07

申请人： Koji Shibasaki ,  Takeshi Watabe ,  Shiro Shibasaki

发明人： Koji Shibasaki ,  Takeshi Watabe ,  Shiro Shibasaki

IPC分类号： G01B716

CPC分类号： G01M99/004 ,  G01N3/165 ,  G01N2203/005

摘要： A high-speed rotation testing apparatus includes a spindle 11 holding a test object S at its lower end, a driving motor 20 for applying torque to the spindle 11, and a frame 30 for supporting a rotor shaft 21 of the driving motor 20 so that the shaft is arranged toward the vertical direction of the apparatus, wherein the spindle 11 is driven directly by a driving motor 20 by inserting the spindle 11 into a through-hole 21a that penetrates the center of the rotor shaft 21 and coupling the upper ends of the rotor shaft 21 and the spindle 11 together, and the through-hole 21a has an inner diameter set so as to form a clearance in which the lower end of the spindle can swing, and further, a damping mechanism 40 that restrains swing is arranged in the vicinity of the lower end of the spindle 11, which projects from the lower end of the rotor shaft 21.

公开(公告)号：US06820503B2

公开(公告)日：2004-11-23

申请号：US10237778

申请日：2002-09-10

申请人： Masanori Sueyoshi ,  Akira Tezuka ,  Koji Shibasaki ,  Xinsheng Huang ,  Toyotaka Osakabe ,  Masao Ono ,  Tsutomu Mashimo

发明人： Masanori Sueyoshi ,  Akira Tezuka ,  Koji Shibasaki ,  Xinsheng Huang ,  Toyotaka Osakabe ,  Masao Ono ,  Tsutomu Mashimo

IPC分类号： G01L300

CPC分类号： B04B15/02 ,  B04B5/0414 ,  B04B9/06 ,  B04B9/12 ,  B04B15/08 ,  G01N2203/0037

摘要： An object of the present invention is to achieve more high-speed rotation of a rotor to which a test object is stored, extending the duration of high-speed rotation, and temperature control of a rotor at the time of high-speed rotation. A high-speed rotation testing apparatus of the present invention comprises: a rotor having a hollow for a test object, to which a predetermined test object is stored; a spindle connected to the rotor; a torque applying device for applying a predetermined torque to the spindle, and a casing for sealing the rotor. The casing comprises a decompressing device and a holder for holding the spindle. The holder has a bushing for supporting the spindle and a bushing supporting member for supporting the bushing by inserting thereto. By forming the inner diameter of at least one of the bushing supporting member larger than the outer diameter of the bushing, the bushing supporting member supports the bushing to be rotatable.

摘要翻译： 本发明的目的是为了实现高速旋转时转子的高速旋转，高速旋转的持续时间和转子的温度控制，能够更高速地旋转被检查体的转子。 本发明的高速旋转试验装置包括：转子，其具有用于被检测物体的中空部，预定的被检体被保存在该中空部上; 连接到转子的主轴; 用于向主轴施加预定扭矩的扭矩施加装置和用于密封转子的壳体。 壳体包括减压装置和用于保持心轴的保持器。 保持器具有用于支撑主轴的衬套和用于通过插入其来支撑衬套的衬套支撑构件。 通过形成衬套支撑构件中的至少一个的内径大于衬套的外径，衬套支撑构件支撑衬套以可旋转。

公开(公告)号：US6111317A

公开(公告)日：2000-08-29

申请号：US784814

申请日：1997-01-16

申请人： Takashi Okada ,  Naohiko Hirano ,  Hiroshi Tazawa ,  Eiichi Hosomi ,  Chiaki Takubo ,  Kazuhide Doi ,  Yoichi Hiruta ,  Koji Shibasaki

发明人： Takashi Okada ,  Naohiko Hirano ,  Hiroshi Tazawa ,  Eiichi Hosomi ,  Chiaki Takubo ,  Kazuhide Doi ,  Yoichi Hiruta ,  Koji Shibasaki

IPC分类号： H01L23/485 ,  H01L23/528 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14

摘要： A first insulating film is formed on an integrated circuit chip on which an I/O pad is formed. A first opening portion is formed above the I/O pad. A conductive layer and a barrier metal layer which are electrically connected to the I/O pad through the first opening portion are stacked on the first insulating film. The conductive layer and the barrier metal layer are patterned by a single mask. A second insulating film is formed on the resultant structure. A second opening portion is formed in the second insulating film at a position different from that of the first opening portion. A solder bump or metal pad is formed on the barrier metal layer in the second opening portion. The position of the solder bump or metal pad is defined by the second opening portion.

摘要翻译： 在其上形成有I / O焊盘的集成电路芯片上形成第一绝缘膜。 第一开口部分形成在I / O焊盘上方。 通过第一开口部分电连接到I / O焊盘的导电层和阻挡金属层堆叠在第一绝缘膜上。 导电层和阻挡金属层通过单个掩模图案化。 在所得结构上形成第二绝缘膜。 在第二绝缘膜上形成与第一开口部不同的位置的第二开口部。 在第二开口部分的阻挡金属层上形成焊料凸块或金属焊盘。 焊料凸块或金属焊盘的位置由第二开口部分限定。

公开(公告)号：US5747881A

公开(公告)日：1998-05-05

申请号：US593622

申请日：1996-01-30

申请人： Eiichi Hosomi ,  Hiroshi Tazawa ,  Chiaki Takubo ,  Koji Shibasaki

发明人： Eiichi Hosomi ,  Hiroshi Tazawa ,  Chiaki Takubo ,  Koji Shibasaki

IPC分类号： H01L21/60 ,  H01L21/603 ,  H01L23/495 ,  H01L23/50 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49572 ,  H01L23/49582 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2924/0002 ,  H01L2924/01322

摘要： A semiconductor device comprises a semiconductor chip, an Au bump formed on the semiconductor chip, and Cu lead bonded to the Au bump through a bonding part. The Cu lead has a Cu core and a plated Sn layer formed on the Cu core, and the bonding part is formed of an Au--rich Au--Cu--Sn alloy of a ternary system having a single-phase structure with a composition of 15 atomic % Sn or less and 25 atomic % Cu or less.

摘要翻译： 半导体器件包括半导体芯片，形成在半导体芯片上的Au凸块，以及通过接合部分接合到Au凸块的Cu引线。 Cu引线具有在Cu芯上形成的Cu芯和镀Sn Sn，并且接合部由具有组成为15的单相结构的三元体系的富Au Au-Cu-Sn合金形成 原子％Sn以下且25原子％以下的Cu以下。

公开(公告)号：US5631499A

公开(公告)日：1997-05-20

申请号：US656902

申请日：1996-06-03

申请人： Eiichi Hosomi ,  Chiaki Takubo ,  Hiroshi Tazawa ,  Ryouichi Miyamoto ,  Takashi Arai ,  Koji Shibasaki

发明人： Eiichi Hosomi ,  Chiaki Takubo ,  Hiroshi Tazawa ,  Ryouichi Miyamoto ,  Takashi Arai ,  Koji Shibasaki

IPC分类号： H01L21/28 ,  H01L21/321 ,  H01L21/60 ,  H01L23/485 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/14

摘要： A semiconductor device having a bump electrode includes a first conductive layer formed on a predetermined portion of a substrate. An insulating layer is formed on the substrate and the first conductive layer. The insulating layer has an opening portion such that a predetermined portion of the first conductive layer is exposed. A second conductive layer is formed on the first conductive layer, a side wall of the opening portion of the insulating layer, and an upper surface of the insulating layer. A third conductive layer is formed to cover at least the insulating layer on the first conductive layer and the second conductive layer along the portion. A fourth conductive layer is formed on the third conductive layer to have an over hang portion. A side etch portion is formed surrounded with an over hang portion of the fourth conductive layer, the third conductive layer, and the insulating layer.

摘要翻译： 具有凸块电极的半导体器件包括形成在基板的预定部分上的第一导电层。 在基板和第一导电层上形成绝缘层。 绝缘层具有使得第一导电层的预定部分露出的开口部。 在第一导电层，绝缘层的开口部分的侧壁和绝缘层的上表面上形成第二导电层。 形成第三导电层以至少覆盖沿着该部分的第一导电层和第二导电层上的绝缘层。 在第三导电层上形成第四导电层以具有过悬挂部分。 侧蚀刻部分形成为由第四导电层，第三导电层和绝缘层的悬垂部分围绕。

公开(公告)号：US08128731B2

公开(公告)日：2012-03-06

申请号：US12225720

申请日：2007-04-04

申请人： Tsutomu Mashimo ,  Masao Ono ,  Xinsheng Huang ,  Yusuke Iguchi ,  Satoru Okayasu ,  Hiroshi Yasuoka ,  Koji Shibasaki ,  Masanori Sueyoshi

发明人： Tsutomu Mashimo ,  Masao Ono ,  Xinsheng Huang ,  Yusuke Iguchi ,  Satoru Okayasu ,  Hiroshi Yasuoka ,  Koji Shibasaki ,  Masanori Sueyoshi

IPC分类号： B01D45/12

CPC分类号： C23C26/00 ,  B01D59/20 ,  C22F3/00 ,  C23C10/18 ,  C23C10/28 ,  Y10S494/90

摘要： A method for separating and enriching isotopes in an efficient and low-cost manner from a condensation-system (liquid or/and solid) material including two or more different isotopes by taking advantage of the sedimentation of atoms through an acceleration field by ultra-high speed rotation. The condensation-system material is placed in a sedimentation tank which is then housed in a supercentrifuge. The supercentrifuge in its rotor is rotation driven by an ultra-high speed rotation power source, and an acceleration field of energy of 100000 G to 1500000 G, i.e., about 100 to 800 m/s in terms of peripheral velocity, is applied to the above condensed (liquid or/and solid) material under such a temperature that is specified by an isotope material to be enriched. In this case, a difference in centrifugal force applied is provided between the isotopes in the condensed (liquid or/and solid) material comprising the at least two isotopes. By virtue of sedimentation by taking advantage of this difference, isotope atoms within the condensed material interact, and, consequently, separation and enrichment of the isotopes can be realized in a higher efficiency than the case where gas is used, by conducting the separation and enrichment of the isotopes within the liquid material, using an effective material, and using a multistaged rotor system.

摘要翻译： 一种以有效和低成本的方式从包含两种或更多种不同同位素的冷凝系统（液体或/或固体）材料中分离富集同位素的方法，通过利用超高速加速场的原子沉淀 速度旋转。 冷凝系统材料放置在沉淀池中，然后将其装入超级离心机。 其转子中的超级离心机由超高速旋转动力源旋转驱动，并且对于圆周速度而言，能量为100000G至1500000G的加速度场，即约100至800m / s 上述冷凝（液体或/和固体）材料在由待富集的同位素材料规定的温度下进行。 在这种情况下，在包含至少两个同位素的冷凝（液体或/和固体）材料中的同位素之间提供了离心力的差异。 通过利用这种差异的沉淀，冷凝材料内的同位素原子相互作用，因此，与使用气体的情况相比，可以通过进行分离和富集而以更高的效率实现同位素的分离和富集 的液体材料中的同位素，使用有效材料，并使用多级转子系统。

公开(公告)号：US6061466A

公开(公告)日：2000-05-09

申请号：US773054

申请日：1996-12-24

申请人： Chiaki Takubo ,  Eiichi Hosomi ,  Hiroshi Tazawa ,  Koji Shibasaki

发明人： Chiaki Takubo ,  Eiichi Hosomi ,  Hiroshi Tazawa ,  Koji Shibasaki

IPC分类号： G01B11/02 ,  G01N21/88 ,  G01R31/04 ,  G01R31/309 ,  G06T7/00 ,  H01L21/60 ,  H01L21/66 ,  G06K9/00

CPC分类号： G06T7/0004 ,  G01N21/88 ,  G01R31/046 ,  G01R31/309 ,  G06T2207/30148

摘要： Disclosed is an apparatus and method for inspecting a connection state of a lead electrode to a bump after TAB (tape automated bonding). An LSI chip is immobilized on a stage. A flexible lead is held by a holding portion and connected to a bump. Above the chip, a CCD camera is provided. The stage is controlled to move up and down by a moving control mechanism. Each of the lead/bump connection states immediately after ILB (Inner lead bonding) is taken in the form of image data and defined as a first image data. A second image data of the lead/bump connection state is taken after the bump and lead are moved to different positions by moving the stage in order to change the position of the chip by means of the moving control mechanism. Whether or not the lead is duly connected to the bump is determined by the comparison of the first and second image data.

摘要翻译： 公开了一种用于在TAB（带自动接合）之后检查引线电极与凸块的连接状态的装置和方法。 将LSI芯片固定在台上。 柔性引线由保持部分保持并连接到凸块。 在芯片之上，提供了一个CCD相机。 通过移动控制机构控制舞台上下移动。 在ILB（内引线接合）之后紧接着的引导/碰撞连接状态以图像数据的形式获取并被定义为第一图像数据。 引导/凸起连接状态的第二图像数据是在通过移动台之后将凸起和引线移动到不同位置之后进行的，以通过移动控制机构改变芯片的位置。 通过第一和第二图像数据的比较来确定引线是否正确连接到凸块。

公开(公告)号：US6049130A

公开(公告)日：2000-04-11

申请号：US853475

申请日：1997-05-09

申请人： Eiichi Hosomi ,  Hiroshi Tazawa ,  Chiaki Takubo ,  Koji Shibasaki

发明人： Eiichi Hosomi ,  Hiroshi Tazawa ,  Chiaki Takubo ,  Koji Shibasaki

IPC分类号： H01L21/60 ,  H01L21/603 ,  H01L23/495 ,  H01L23/50 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L23/49572 ,  H01L23/49582 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2924/0002 ,  H01L2924/01322

摘要： A semiconductor device comprises a semiconductor chip, an Au bump formed on the semiconductor chip, and Cu lead bonded to the Au bump through a bonding part. The Cu lead has a Cu core and a plated Sn layer formed on the Cu core, and the bonding part is formed of an Au-rich Au--Cu--Sn alloy of a ternary system having a single-phase structure containing 15 at. % or less Sn and 25 at. % or less Cu.

摘要翻译： 半导体器件包括半导体芯片，形成在半导体芯片上的Au凸块，以及通过接合部分接合到Au凸块的Cu引线。 Cu引线具有形成在Cu芯上的Cu芯和镀Sn Sn，并且所述接合部由具有包含15at的单相结构的三元体系的富Au Au-Cu-Sn合金形成。 ％以下Sn和25 at。 ％以下Cu。

公开(公告)号：US5825081A

公开(公告)日：1998-10-20

申请号：US729420

申请日：1996-10-11

申请人： Eiichi Hosomi ,  Chiaki Takubo ,  Hiroshi Tazawa ,  Koji Shibasaki

发明人： Eiichi Hosomi ,  Chiaki Takubo ,  Hiroshi Tazawa ,  Koji Shibasaki

IPC分类号： H01L21/60 ,  H01L23/495

CPC分类号： H01L23/49572 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253

摘要： The present invention is characterized by providing leads not contributing to actual connection outside the corner leads to prevent the deformation of the corner leads and improve the yield of tape carriers. A device hole is made in a near-central place of an insulating resin film. Around the device hole, outer-lead holes are made. On the insulating resin film, a plurality of wiring patterns are provided and forced to project into the device hole. The plurality of wiring patterns are formed into a plurality of inner leads, of which the outermost ones are determined to be corner leads. On each corner of the device hole, an aligning mark is provided. Dummy leads are provided closer to the aligning marks. The dummy leads are made shorter than the inner leads and corner leads.

摘要翻译： 本发明的特征在于，提供不会在拐角引线外部实际连接的引线，以防止拐角引线的变形并提高带状载体的产量。 在绝缘树脂膜的近中心位置制造器件孔。 围绕设备孔，制成外引线孔。 在绝缘树脂膜上，设置多个布线图案并强制突出到装置孔中。 多个布线图案形成为多个内引线，其中最外侧的引线被确定为拐角引线。 在设备孔的每个角上，提供对准标记。 靠近对准标记提供虚拟引线。 虚拟引线比内引线和角引脚短。