公开(公告)号：US09711669B2

公开(公告)日：2017-07-18

申请号：US12997027

申请日：2009-06-03

申请人： Hidetada Tokioka ,  Hiroya Yamarin

发明人： Hidetada Tokioka ,  Hiroya Yamarin

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/0475 ,  H01L31/046 ,  H01L31/0392 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/046 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A thin-film photoelectric converter in which a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer for photoelectric conversion, and a second electrode layer formed of a conductive material that reflects light are stacked in that order on an insulating light-transmitting substrate. The photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other, adjacent ones of the plurality of photoelectric conversion cells separated by the dividing grooves being electrically connected in series. The photoelectric conversion layer includes: a first semiconductor layer including a microcrystalline structure; and a second semiconductor layer including an amorphous structure, the second semiconductor layer being disposed so as to surround all side wall portions of the first semiconductor layer that extend in in-plane directions of the insulating light-transmitting substrate.

公开(公告)号：US08766085B2

公开(公告)日：2014-07-01

申请号：US13256813

申请日：2010-03-16

申请人： Hidetada Tokioka ,  Hiroya Yamarin ,  Tae Orita

发明人： Hidetada Tokioka ,  Hiroya Yamarin ,  Tae Orita

IPC分类号： H01L31/00 ,  H01L21/00 ,  H01L25/04 ,  H01L31/05 ,  H01L31/0216

CPC分类号： H01L25/045 ,  H01L31/02021 ,  H01L31/02165 ,  H01L31/043 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/05 ,  H01L31/0508 ,  H01L31/056 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： A photoelectric conversion device is provided in which a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a first translucent insulated substrate and a second photoelectric conversion module having a plurality of photoelectric conversion elements formed on one surface of a second translucent insulated substrate are bonded together with the first photoelectric conversion elements and the second photoelectric conversion elements placed on an inner side. The photoelectric conversion device includes a plurality of photoelectric conversion element pairs formed by electrically connecting, in series, the first photoelectric conversion elements and the second photoelectric conversion elements arranged in positions opposed to each other. All the photoelectric conversion element pairs are electrically connected in series.

摘要翻译： 提供一种光电转换装置，其中具有形成在第一透光性绝缘基板的一个表面上的多个第一光电转换元件的第一光电转换模块和具有形成在第一透光性绝缘基板的一个表面上的多个光电转换元件的第二光电转换模块 第二透光性绝缘基板与第一光电转换元件和位于内侧的第二光电转换元件接合。 光电转换装置包括通过串联电连接第一光电转换元件和布置在彼此相对的位置的第二光电转换元件而形成的多个光电转换元件对。 所有光电转换元件对串联电连接。

公开(公告)号：US20120000518A1

公开(公告)日：2012-01-05

申请号：US13256813

申请日：2010-03-16

申请人： Hidetada Tokioka ,  Hiroya Yamarin ,  Tae Orita

发明人： Hidetada Tokioka ,  Hiroya Yamarin ,  Tae Orita

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L25/045 ,  H01L31/02021 ,  H01L31/02165 ,  H01L31/043 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/05 ,  H01L31/0508 ,  H01L31/056 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： A photoelectric conversion device is provided in which a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a first translucent insulated substrate and a second photoelectric conversion module having a plurality of photoelectric conversion elements formed on one surface of a second translucent insulated substrate are bonded together with the first photoelectric conversion elements and the second photoelectric conversion elements placed on an inner side. The photoelectric conversion device includes a plurality of photoelectric conversion element pairs formed by electrically connecting, in series, the first photoelectric conversion elements and the second photoelectric conversion elements arranged in positions opposed to each other. All the photoelectric conversion element pairs are electrically connected in series.

摘要翻译： 提供一种光电转换装置，其中具有形成在第一透光性绝缘基板的一个表面上的多个第一光电转换元件的第一光电转换模块和具有形成在第一透光性绝缘基板的一个表面上的多个光电转换元件的第二光电转换模块 第二透光性绝缘基板与第一光电转换元件和位于内侧的第二光电转换元件接合。 光电转换装置包括通过串联电连接第一光电转换元件和布置在彼此相对的位置的第二光电转换元件而形成的多个光电转换元件对。 所有光电转换元件对串联电连接。

公开(公告)号：US20110223709A1

公开(公告)日：2011-09-15

申请号：US13129612

申请日：2009-11-20

申请人： Hidetada Tokioka ,  Hiroya Yamarin ,  Tae Orita

发明人： Hidetada Tokioka ,  Hiroya Yamarin ,  Tae Orita

IPC分类号： H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/0463 ,  H01L31/0465 ,  Y02E10/50

摘要： A method for manufacturing a thin-film photoelectric conversion device includes forming a first electrode layer, a photoelectric conversion layer having three conductive semiconductor layers laminated thereon, and a second electrode layer sequentially laminated in this order on a translucent insulating substrate, such that adjacent thin-film photoelectric conversion cells are electrically connected in series, isolating a thin-film photoelectric conversion cell into a plurality of thin-film photoelectric conversion cells by forming isolation trenches that reach from the second electrode layer to the first electrode layer, removing a part of sidewalls at an external periphery of the thin-film photoelectric conversion cells positioned at an external peripheral edge of the thin-film photoelectric conversion device, along with the external periphery, and modifying into insulation layers by performing an oxidation process on all of the sidewalls of the isolation trenches of the photoelectric conversion layer and all of the sidewalls at the external periphery.

摘要翻译： 一种薄膜光电转换装置的制造方法，其特征在于，在半透明绝缘基板上形成第一电极层，层叠有导电性半导体层的光电转换层和依次层叠的第二电极层，使得相邻的薄膜 薄膜光电转换单元串联电连接，通过形成从第二电极层到达第一电极层的隔离沟槽，将薄膜光电转换单元隔离成多个薄膜光电转换单元， 位于薄膜光电转换装置的外周边缘处的薄膜光电转换元件的外围的侧壁以及外周，并通过对所有的侧壁进行氧化处理而修饰为绝缘层 光电隔离槽 转换层和外围的所有侧壁。

公开(公告)号：US20110108118A1

公开(公告)日：2011-05-12

申请号：US13002403

申请日：2009-05-22

申请人： Hiroya Yamarin ,  Hidetada Tokioka ,  Mikio Yamamuka

发明人： Hiroya Yamarin ,  Hidetada Tokioka ,  Mikio Yamamuka

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： A thin-film solar cell in which a transparent electrode having fine surface irregularities with small surface roughness and substantially uniform in-plane resistance is realized can be obtained by forming a plurality of first transparent conductive films separated from one another in a substrate surface on a transparent insulative substrate, forming a second transparent conductive film on the first transparent conductive films, etching the second transparent conductive film in a granular shape and forming first granular members dispersed on the first transparent conductive films, forming a power generation layer on the first transparent conductive films and on the dispersed first granular members, forming a rear-side electrode layer on the power generation layer.

摘要翻译： 通过在基板表面上形成多个彼此分离的第一透明导电膜，可以获得其中具有表面粗糙度小且表面粗糙度小且平面电阻基本均匀的细小表面凹凸的透明电极的薄膜太阳能电池 在所述第一透明导电膜上形成第二透明导电膜，将所述第二透明导电膜蚀刻成粒状，并形成分散在所述第一透明导电膜上的第一粒状体，在所述第一透明导电膜上形成发电层 并且在分散的第一颗粒构件上，在发电层上形成后侧电极层。

公开(公告)号：US09472711B2

公开(公告)日：2016-10-18

申请号：US14376290

申请日：2012-03-29

申请人： Tsutomu Matsuura ,  Hiroya Yamarin ,  Hidetada Tokioka

发明人： Tsutomu Matsuura ,  Hiroya Yamarin ,  Hidetada Tokioka

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/042 ,  H01L31/075 ,  H01L31/04

CPC分类号： H01L31/1884 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/04 ,  H01L31/042 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A back contact heterojunction photoelectric conversion device, that obtain junctions that are nearly ohmic contacts by integrally forming a transparent conductive film including an electrode directly on a p-type amorphous silicon film and a transparent conductive oxide directly on an n-type amorphous silicon film. A method of manufacturing the device includes: integrally forming an oxide electrode layer on the n-type amorphous silicon film and the p-type amorphous silicon film; and applying plasma, under a condition that a mask is disposed on the transparent conductive film covering either the n-type amorphous silicon film or the p-type amorphous silicon film, to exposed portions of transparent conductive film.

摘要翻译： 一种背接触异质结光电转换装置，其通过直接在p型非晶硅膜上直接形成直接包含电极的透明导电膜和直接在n型非晶硅膜上的透明导电氧化物来获得接近欧姆接触的结。 一种制造该器件的方法包括：在n型非晶硅膜和p型非晶硅膜上一体地形成氧化物电极层; 并且在将掩模设置在覆盖n型非晶硅膜或p型非晶硅膜的透明导电膜上的条件下，对透明导电膜的露出部分施加等离子体。

公开(公告)号：US20110079272A1

公开(公告)日：2011-04-07

申请号：US12997027

申请日：2009-06-03

申请人： Hidetada Tokioka ,  Hiroya Yamarin

发明人： Hidetada Tokioka ,  Hiroya Yamarin

IPC分类号： H01L31/042 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/046 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A thin-film photoelectric converter in which a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer for photoelectric conversion, and a second electrode layer formed of a conductive material that reflects light are stacked in that order on an insulating light-transmitting substrate. The photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other, adjacent ones of the plurality of photoelectric conversion cells separated by the dividing grooves being electrically connected in series. The photoelectric conversion layer includes: a first semiconductor layer including a microcrystalline structure; and a second semiconductor layer including an amorphous structure, the second semiconductor layer being disposed so as to surround all side wall portions of the first semiconductor layer that extend in in-plane directions of the insulating light-transmitting substrate.

摘要翻译： 一种薄膜光电转换器，其中由透明导电材料形成的第一电极层，用于光电转换的光电转换层和由反射光的导电材料形成的第二电极层依次层叠在绝缘发光层上， 透射基板。 光电转换层和第二电极层被划分成岛，形成多个彼此分离的光电转换单元的岛，由分隔槽分离的相邻的多个光电转换单元串联电连接。 光电转换层包括：包含微晶结构的第一半导体层; 以及包括非晶结构的第二半导体层，所述第二半导体层被布置为围绕在所述绝缘透光基板的面内方向上延伸的所述第一半导体层的所有侧壁部分。

公开(公告)号：US20140373896A1

公开(公告)日：2014-12-25

申请号：US14376290

申请日：2012-03-29

申请人： Tsutomu Matsuura ,  Hiroya Yamarin ,  Hidetada Tokioka

发明人： Tsutomu Matsuura ,  Hiroya Yamarin ,  Hidetada Tokioka

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/042 ,  H01L31/028 ,  H01L31/075

CPC分类号： H01L31/1884 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/04 ,  H01L31/042 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A back contact heterojunction photoelectric conversion device, that obtain junctions that are nearly ohmic contacts by integrally forming a transparent conductive film including an electrode directly on a p-type amorphous silicon film and a transparent conductive oxide directly on an n-type amorphous silicon film. A method of manufacturing the device includes: integrally forming an oxide electrode layer on the n-type amorphous silicon film and the p-type amorphous silicon film; and applying plasma, under a condition that a mask is disposed on the transparent conductive film covering either the n-type amorphous silicon film or the p-type amorphous silicon film, to exposed portions of transparent conductive film.

摘要翻译： 一种背接触异质结光电转换装置，其通过直接在p型非晶硅膜上直接形成直接包含电极的透明导电膜和直接在n型非晶硅膜上的透明导电氧化物来获得接近欧姆接触的结。 一种制造该器件的方法包括：在n型非晶硅膜和p型非晶硅膜上一体地形成氧化物电极层; 并且在将掩模设置在覆盖n型非晶硅膜或p型非晶硅膜的透明导电膜上的条件下，对透明导电膜的露出部分施加等离子体。

公开(公告)号：US08507310B2

公开(公告)日：2013-08-13

申请号：US13129612

申请日：2009-11-20

申请人： Hidetada Tokioka ,  Hiroya Yamarin ,  Tae Orita

发明人： Hidetada Tokioka ,  Hiroya Yamarin ,  Tae Orita

IPC分类号： H01L21/00 ,  H01L31/042

CPC分类号： H01L31/022425 ,  H01L31/0463 ,  H01L31/0465 ,  Y02E10/50

摘要： A method for manufacturing a thin-film photoelectric conversion device includes forming a first electrode layer, a photoelectric conversion layer having three conductive semiconductor layers laminated thereon, and a second electrode layer sequentially laminated in this order on a translucent insulating substrate, such that adjacent thin-film photoelectric conversion cells are electrically connected in series, isolating a thin-film photoelectric conversion cell into a plurality of thin-film photoelectric conversion cells by forming isolation trenches that reach from the second electrode layer to the first electrode layer, removing a part of sidewalls at an external periphery of the thin-film photoelectric conversion cells positioned at an external peripheral edge of the thin-film photoelectric conversion device, along with the external periphery, and modifying into insulation layers by performing an oxidation process on all of the sidewalls of the isolation trenches of the photoelectric conversion layer and all of the sidewalls at the external periphery.

摘要翻译： 一种薄膜光电转换装置的制造方法，其特征在于，在半透明绝缘基板上形成第一电极层，层叠有导电性半导体层的光电转换层和依次层叠的第二电极层，使得相邻的薄膜 薄膜光电转换单元串联电连接，通过形成从第二电极层到达第一电极层的隔离沟槽，将薄膜光电转换单元隔离成多个薄膜光电转换单元， 位于薄膜光电转换装置的外周边缘处的薄膜光电转换元件的外围的侧壁以及外周，并通过对所有的侧壁进行氧化处理而修饰为绝缘层 光电隔离槽 转换层和外围的所有侧壁。

公开(公告)号：US07570244B2

公开(公告)日：2009-08-04

申请号：US10513755

申请日：2003-06-17

申请人： Masafumi Agari ,  Hidetada Tokioka ,  Ryuichi Hashido ,  Takahiro Urakabe ,  Suehiro Gotoh ,  Masashi Okabe ,  Mitsuo Inoue

发明人： Masafumi Agari ,  Hidetada Tokioka ,  Ryuichi Hashido ,  Takahiro Urakabe ,  Suehiro Gotoh ,  Masashi Okabe ,  Mitsuo Inoue

IPC分类号： G09G3/36

CPC分类号： G09G3/3283 ,  G09G3/3241 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/027 ,  G09G2310/0297 ,  G09G2320/0242

摘要： Signal lines for supplying signal currents to respective pixel circuits having light emitting elements are arranged. A signal line driving circuit generates, on a signal line, a signal current corresponding to the image data, by switching bit weighting currents output from bit weighting current source circuits provided for respective bits of the image data, using a switch circuit turned on/off dependent on the corresponding bit. Each current source circuit has a function of correcting the level of the bit weighting current output from itself, based on a reference current of the bit weighting current supplied from a reference current line. Therefore, even when the characteristics of TFTs forming respective current source circuits vary widely, variation in signal currents among the signal lines can be suppressed, and unevenness in emission luminance can be suppressed.

摘要翻译： 布置用于向具有发光元件的各个像素电路提供信号电流的信号线。 信号线驱动电路通过使用开关电路接通/断开来切换信号线上产生与图像数据相对应的信号电流，通过切换由针对图像数据的各个比特设置的比特加权电流源电路输出的比特加权电流 取决于相应的位。 每个电流源电路具有基于从参考电流线提供的比特加权电流的参考电流来校正其自身输出的比特加权电流的电平的功能。 因此，即使形成各个电流源电路的TFT的特性变化很大，也可以抑制信号线之间的信号电流的变化，能够抑制发光亮度的不均匀。