摘要:
A stator provided with annular split stator cores, formed by stacking steel plates. Each plate includes a yoke and a stator tooth. The cores include a yoke portion a stator tooth portion. The stator is manufactured by arranging an electromagnetic steel plate between a first die and a second die. The first die has a hole shaped as a steel plate. The second die has a projection inserted into the hole and shaped as a steel plate. The steel plates are formed by the first and the second dies. In a gap between an inner surface of the first die that defines the hole and an outer surface of the projection, a gap at a part that forms the stator tooth portion is larger than a gap at a part that defines a circumferential end surface of the yoke portion located in a circumferential direction of the stator core.
摘要:
A stator provided with an annular stator core formed by annularly arranging split stator cores, and also with coils mounted to the stator core. The split stator cores each includes a yoke portion extending in a circumferential direction of the stator core and a stator tooth protruding from the yoke portion. On at least part of side surfaces of the stator tooth that are arranged in a circumferential direction of the stator core, a radial end surface of the stator tooth that is located radially inward of the stator core, and, of radial end surfaces of the yoke portion that are arranged in a radial direction of the stator core, the radial end surface at which the stator tooth is formed, a rough surface portion is formed having surface roughness greater than that of circumferential end surfaces of the yoke portion that are located in a circumferential direction of the stator core.
摘要:
A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.
摘要:
A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.
摘要:
A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.
摘要:
A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.
摘要:
A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要:
A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要:
The invention provides a spin valve thin film element in which output characteristics and the stability of reproduced waveforms are improved, asymmetry is decreased, and the occurrence of side reading is prevented. The spin valve thin film element includes a lamination having an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic intermediate layer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, and a backed layer composed of a nonmagnetic conductive material, which are laminated on a substrate. Hard bias layers are formed on both sides of the lamination, and orient the magnetization direction of the free magnetic layer in the direction crossing the magnetization direction of the second pinned magnetic layer. Electrode layers are formed on the hard bias layers to supply a sensing current J to the lamination. The electrode layers are formed to extend to the surface of the lamination toward the central portion from both sides of the lamination.
摘要:
A thin film magnetic head is able to control occurrence of Barkhausen noises attributable to configuration magnetic anisotropy of an upper shield layer. An inductive head is provided with a magnetic material layer having a space for forming a coil layer thereon. A very narrow gap is provided between a front separate layer that opposes a magnetic recording medium and a rear separate layer that opposes the front separate layer. The front separate layer serves also as an upper shield layer of an MR head and a lower core layer of the inductive head.