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    Method for manufacturing an electromagnetic conversion device and a displacement detector which uses an electromagnetic conversion device
    1.
    发明授权
    Method for manufacturing an electromagnetic conversion device and a displacement detector which uses an electromagnetic conversion device 失效
    一种使用电磁转换装置的电磁转换装置和位移检测器的制造方法

    公开(公告)号：US5551586A

    公开(公告)日：1996-09-03

    申请号：US293966

    申请日：1994-08-24

    申请人： Hirofumi Uenoyama ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Yoshimi Yoshino ,  Motofumi Suzuki

    发明人： Hirofumi Uenoyama ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Yoshimi Yoshino ,  Motofumi Suzuki

    IPC分类号： G01B7/00 ,  C23C28/00 ,  G01D5/14 ,  G01D5/16 ,  G01D5/18 ,  G01P3/487 ,  G01R33/09 ,  H01L27/22 ,  B44C1/22 ,  C23F1/00 ,  H01L21/00

    CPC分类号： G01D5/145 ,  B82Y25/00 ,  C23C28/00 ,  G01P3/487 ,  G01R33/093 ,  H01L27/22

    摘要： A method of manufacturing a magneto-electric conversion device having a large rate of change of magnetic resistance and which is easy to position with respect to a magnetized surface, and a moving subject displacement detector using a magneto-electric conversion device manufactured by that method. A magnet which rotates together with the rotation of a drive gear is magnetized in alternately differing north and south poles, arranged in an equal sized section from a center portion thereof. An IC chip is positioned opposite to and at a distance from the magnetized surface of the magnet. Magneto-electric conversion devices are located on the IC chip. These magneto-electric conversion devices are formed by repeated alternate depositions, onto a surface of a single-crystal silicon substrate, of magnetic cobalt films having a thickness of several to several tens of angstroms and non-magnetic copper films having a thickness of several to several tens of angstroms.

    摘要翻译： 一种制造磁阻变化率大且相对于磁化面容易定位的磁电转换装置的方法，以及使用该方法制造的磁电转换装置的移动体位移检测器。 与驱动齿轮的旋转一起旋转的磁体被磁化为交替不同的北极和南极，其中心部分以相同的尺寸设置。 IC芯片位于与磁体的磁化表面相对且距离磁化表面一定距离处。 磁电转换装置位于IC芯片上。 这些磁电转换装置通过重复交替沉积形成在单晶硅衬底的表面上，具有几个至几十埃厚度的磁性钴膜和非磁性铜膜，其厚度为几个至几十 几十埃。

    Magnetoresistive element and manufacturing method therefor
    2.
    发明授权
    Magnetoresistive element and manufacturing method therefor 失效
    磁阻元件及其制造方法

    公开(公告)号：US5471084A

    公开(公告)日：1995-11-28

    申请号：US94142

    申请日：1993-07-30

    申请人： Yasutoshi Suzuki ,  Kenichi Ao ,  Hirofumi Uenoyama ,  Hiroki Noguchi ,  Koji Eguchi ,  Ichiro Ito ,  Yoshimi Yoshino

    发明人： Yasutoshi Suzuki ,  Kenichi Ao ,  Hirofumi Uenoyama ,  Hiroki Noguchi ,  Koji Eguchi ,  Ichiro Ito ,  Yoshimi Yoshino

    IPC分类号： H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/08

    摘要： This invention relates to a magnetoresistive element used for a magnetic sensor, etc. A ferromagnetic magnetoresistive element thin film is formed so as to be electrically connected to and so as to overlap the upper end portion of an aluminum wiring metal on a substrate. Through using a vacuum heat treatment with a temperature between 350.degree. and 450.degree. C., a Ni--Al-based alloy is formed at the overlapping portion. Therefore, even when a surface protection film of silicon nitride is subsequently formed by plasma CVD on the substrate, the alloy prevents the nitriding of the upper end portion of the aluminum wiring metal. Accordingly, the surface can be protected from moisture by the silicon nitride film without increasing the contact resistance between the magnetoresistive element thin film and the wiring metal. Instead of the Ni--Al-based alloy, other conductive metals such as TiW, TiN, Ti, Zr, or the like may be used. Also, the surface protection film may be a multi-layered film having a first film containing no nitrogen, such as a silicon oxide film, and a second film of silicon nitride film formed on the first film.

    摘要翻译： PCT No.PCT / JP92 / 01581 Sec。 371日期：1993年7月30日 102（e）日期1993年7月30日PCT提交1992年12月3日PCT公布。 公开号WO93 / 11569 日本特许公报1993年6月10日。本发明涉及用于磁传感器等的磁阻元件。铁磁磁阻元件薄膜形成为与铝布线的上端部电连接并与其重叠 金属在基板上。 通过使用350〜450℃的真空热处理，在重叠部分形成Ni-Al系合金。 因此，即使在基板上随后通过等离子体CVD形成氮化硅的表面保护膜，合金也能防止铝布线金属的上端部的氮化。 因此，可以防止表面被氮化硅膜防止湿气，而不增加磁阻元件薄膜和布线金属之间的接触电阻。 可以使用TiW，TiN，Ti，Zr等其他导电性金属代替Ni-Al系合金。 此外，表面保护膜也可以是具有不含氮的第一膜的多层膜，例如氧化硅膜，以及形成在第一膜上的第二氮化硅膜。

    Method for fabricating a semiconductor acceleration sensor
    3.
    发明授权
    Method for fabricating a semiconductor acceleration sensor 失效
    半导体加速度传感器的制造方法

    公开(公告)号：US5851851A

    公开(公告)日：1998-12-22

    申请号：US399342

    申请日：1995-03-06

    申请人： Hirofumi Uenoyama ,  Masakazu Kanosue ,  Kenichi Ao ,  Yasutoshi Suzuki

    发明人： Hirofumi Uenoyama ,  Masakazu Kanosue ,  Kenichi Ao ,  Yasutoshi Suzuki

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/78

    CPC分类号： G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

    摘要： It is an object to provide a method of fabrication for a semiconductor acceleration sensor which can prevent destruction of a movable portion during dicing. A sacrificial layer composed of silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the sacrificial layer. A polyimide film is applied on the movable member at room temperature and heated to approximately 350.degree. C. to harden. The movable member is supported by this polyimide film. Accordingly, etching liquid penetration holes are formed on the polyimide film. Further, the sacrificial layer disposed between the movable member and the silicon substrate is etched away by means of dipping the silicon substrate into hydrofluoric acid-based etching liquid. Thereafter, the silicon substrate is dipped into demineralized water to replace the etching liquid with demineralized water, and subsequently the silicon substrate is dried. Accordingly, the silicon substrate is diced and thereafter the polyimide film is etched away by O.sub.2 ashing.

    摘要翻译： 本发明的目的是提供一种半导体加速度传感器的制造方法，其可以防止在切割期间可动部分的破坏。 在硅衬底上形成由氧化硅膜构成的牺牲层，在牺牲层上形成由多晶硅构成的可动构件。 将聚酰亚胺膜在室温下涂布在可动件上并加热至约350℃以硬化。 可动构件由该聚酰亚胺膜支撑。 因此，在聚酰亚胺膜上形成蚀刻液体穿透孔。 此外，通过将硅衬底浸入氢氟酸蚀刻液中，设置在可移动部件和硅衬底之间的牺牲层被蚀刻掉。 此后，将硅衬底浸入软化水​​中以用软化水代替蚀刻液，随后将硅衬底干燥。 因此，对硅衬底进行切割，然后通过氧化物灰蚀蚀刻掉聚酰亚胺膜。

    Semiconductor acceleration sensor with beam structure
    4.
    发明授权
    Semiconductor acceleration sensor with beam structure 失效
    具有梁结构的半导体加速度传感器

    公开(公告)号：US5619050A

    公开(公告)日：1997-04-08

    申请号：US399345

    申请日：1995-03-06

    申请人： Hirofumi Uenoyama ,  Kenichi Ao ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Yukihiro Takeuchi

    发明人： Hirofumi Uenoyama ,  Kenichi Ao ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/0802 ,  G01P15/12 ,  Y10S73/01

    摘要： A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.

    摘要翻译： 公开了能够减小漏电流的半导体加速度传感器及其制造方法。 梁结构设置在硅衬底上。 梁结构具有可移动部分，并且可移动部分设置在硅基板上方规定距离处。 可动电极部分形成在可动部分的一部分中。 在硅衬底中形成由杂质扩散层制成的固定电极，以对应于可动电极部分的两侧。 在硅衬底中形成外围电路。 光束结构和外围电路通过由多晶硅制成的导电薄膜电连接。 然后，当向梁结构施加电压并且向两个固定电极施加电压时，形成反型层，并且电流在固定电极之间流动。 在接收到加速度并且可移动部分移位的情况下，在固定电极之间流动的电流改变。

    Revolution detecting device
    6.
    发明授权
    Revolution detecting device 有权

    公开(公告)号：US06661225B2

    公开(公告)日：2003-12-09

    申请号：US10348187

    申请日：2003-01-22

    申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Yuichiro Murata ,  Hirofumi Uenoyama

    发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Yuichiro Murata ,  Hirofumi Uenoyama

    IPC分类号： G11B5147

    CPC分类号： G01D5/145 ,  B82Y25/00 ,  G01P3/487 ,  G01R33/093

    摘要： In a revolution detecting device, a tunneling magnetoresistance sensor having an element located in a region is provided. The tunneling magnetoresistance sensor comprises a substrate, a pinned layer composed of ferromagnetism material and located to one side of the substrate, a tunneling layer composed of insulating film and located to one side of the pinned layer and a free layer composed of ferromagnetism film and located to one side of the tunneling layer. The element is configured to detect a change of magnetoresistance of the element according to a magnetic field applied in the region in which the element is located. The change of the magnetoresistance of the element is based on a change of current flowing through the tunneling layer between the pinned layer and the free layer. In the revolution detecting device, a revolution member is disposed in a vicinity of the element in the Y axis from a viewpoint of the element. The revolution member has a surface portion opposite to the element. The surface portion is formed with S poles and N poles which are alternately arranged. In the revolution detecting device, a magnet is disposed in a vicinity of the element and generating the magnetic field and a direction of the magnetic field is substantially parallel to the Y axis at a center portion of the element. When the revolution member revolves, the S poles and N poles are configured to move substantially in parallel to the X axis on the Y axis determined by the element.

    Magnetic sensor and manufacturing method therefor
    8.
    发明授权
    Magnetic sensor and manufacturing method therefor 有权
    磁传感器及其制造方法

    公开(公告)号：US06734671B2

    公开(公告)日：2004-05-11

    申请号：US10091592

    申请日：2002-03-07

    申请人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

    发明人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

    IPC分类号： G01R3309

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L27/22

    摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

    摘要翻译： 在由硅制成的衬底的绝缘表面上形成磁阻器件。 这些器件通过使用形成在衬底表面上的布线层的绝缘膜串联连接。 形成用于钝化的绝缘膜以覆盖器件和布线层。 通过有机膜在钝化绝缘膜上形成Ni-Fe合金的磁屏蔽层，用于缓解热应力以覆盖其中一个器件。 在从晶片去除包含磁阻器件和其他部件的传感器芯片之后，通过热处理将芯片通过Ag糊层结合到引线框架。 优选地，磁屏蔽层由Ni含量为69％以下的Ni-Fe合金制成。