公开(公告)号：US07586131B2

公开(公告)日：2009-09-08

申请号：US11042406

申请日：2005-01-25

申请人： Hirohiko Nishiki ,  Kazuki Kobayashi

发明人： Hirohiko Nishiki ,  Kazuki Kobayashi

IPC分类号： H01L29/74

CPC分类号： H01L27/28 ,  G02F1/1368 ,  H01L27/3244

摘要： A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of which is electrically conductive, an insulating layer that covers the core, and a semiconductor layer that covers the insulating layer. Each of the function lines contacts with, and crosses, the conductor lines. Each of the transistors includes a first ohmic contact region, which is defined by a region where one of the conductor lines crosses one of the function lines and which makes an ohmic contact with the semiconductor layer, a second ohmic contact region, which also makes an ohmic contact with the semiconductor layer, and a channel region, which is defined in the semiconductor layer between the first and second ohmic contact regions.

摘要翻译： 晶体管阵列包括导线，功能线和晶体管。 每个导体线包括芯和覆盖芯的导体层。 每个功能线包括至少其表面是导电的芯，覆盖芯的绝缘层和覆盖绝缘层的半导体层。 每个功能线与导体线接触并交叉。 每个晶体管包括第一欧姆接触区，其由导体线中的一个与一个功能线交叉并且与半导体层发生欧姆接触的区域限定，第二欧姆接触区也形成第二欧姆接触区， 与半导体层的欧姆接触以及在第一和第二欧姆接触区域之间的半导体层中限定的沟道区域。

公开(公告)号：US20050127455A1

公开(公告)日：2005-06-16

申请号：US11042406

申请日：2005-01-25

申请人： Hirohiko Nishiki ,  Kazuki Kobayashi

发明人： Hirohiko Nishiki ,  Kazuki Kobayashi

IPC分类号： G02F1/1368 ,  H01L27/28 ,  H01L27/32 ,  H01L27/10 ,  H01L21/38 ,  H01L29/94 ,  H01L31/113

CPC分类号： H01L27/28 ,  G02F1/1368 ,  H01L27/3244

摘要： A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of which is electrically conductive, an insulating layer that covers the core, and a semiconductor layer that covers the insulating layer. Each of the function lines contacts with, and crosses, the conductor lines. Each of the transistors includes a first ohmic contact region, which is defined by a region where one of the conductor lines crosses one of the function lines and which makes an ohmic contact with the semiconductor layer, a second ohmic contact region, which also makes an ohmic contact with the semiconductor layer, and a channel region, which is defined in the semiconductor layer between the first and second ohmic contact regions.

公开(公告)号：US06885028B2

公开(公告)日：2005-04-26

申请号：US10389883

申请日：2003-03-18

申请人： Hirohiko Nishiki ,  Kazuki Kobayashi

发明人： Hirohiko Nishiki ,  Kazuki Kobayashi

IPC分类号： G02F1/1368 ,  H01L27/28 ,  H01L27/32 ,  H01L29/04

CPC分类号： H01L27/28 ,  G02F1/1368 ,  H01L27/3244

摘要： A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of which is electrically conductive, an insulating layer that covers the core, and a semiconductor layer that covers the insulating layer. Each of the function lines contacts with, and crosses, the conductor lines. Each of the transistors includes a first ohmic contact region, which is defined by a region where one of the conductor lines crosses one of the function lines and which makes an ohmic contact with the semiconductor layer, a second ohmic contact region, which also makes an ohmic contact with the semiconductor layer, and a channel region, which is defined in the semiconductor layer between the first and second ohmic contact regions.

摘要翻译： 晶体管阵列包括导线，功能线和晶体管。 每个导体线包括芯和覆盖芯的导体层。 每个功能线包括至少其表面是导电的芯，覆盖芯的绝缘层和覆盖绝缘层的半导体层。 每个功能线与导体线接触并交叉。 每个晶体管包括第一欧姆接触区，其由导体线中的一个与一个功能线交叉并且与半导体层发生欧姆接触的区域限定，第二欧姆接触区也形成第二欧姆接触区， 与半导体层的欧姆接触以及在第一和第二欧姆接触区域之间的半导体层中限定的沟道区域。

公开(公告)号：US09126523B2

公开(公告)日：2015-09-08

申请号：US13566317

申请日：2012-08-03

申请人： Noriyuki Ogita ,  Kazunari Sakurai ,  Ryou Maeda ,  Kazuki Kobayashi ,  Koshu Yamashita ,  Akihiko Go ,  Toshihiko Nishio ,  Yoshio Masuda

发明人： Noriyuki Ogita ,  Kazunari Sakurai ,  Ryou Maeda ,  Kazuki Kobayashi ,  Koshu Yamashita ,  Akihiko Go ,  Toshihiko Nishio ,  Yoshio Masuda

IPC分类号： B60P1/54 ,  B60P1/64 ,  B66D3/08

CPC分类号： B60P1/6472 ,  B60P1/5428 ,  B66D3/08

摘要： Provided is a vehicle that elevates a working beam installed between a pair of booms with a working beam elevating unit and can ensure the area of a load receiving surface where a load is loaded. The working beam elevating unit is received in a working beam and one end of a chain is fixed to a boom. Therefore, the working beam is moved up/down by loosening and retracting the chain. Therefore, as the working beam elevating unit is installed at the working beam, it is not necessary to ensure a space for installing the working beam on a vehicle body. Therefore, it is correspondingly possible to enlarge the space (area of the load receiving surface) on the vehicle for loading a load.

摘要翻译： 提供一种车辆，其将安装在一对起重臂与作业梁提升单元之间的作业梁提升，并且可以确保负载接收表面的负载的面积。 工作梁提升单元被接收在工作梁中，链的一端固定在吊杆上。 因此，通过松开和缩回链条，工作梁上/下移动。 因此，由于工作梁提升单元安装在工作梁上，因此不需要确保用于将工作梁安装在车体上的空间。 因此，可以相应地扩大用于装载负载的车辆上的空间（承载面的面积）。

公开(公告)号：US08980121B2

公开(公告)日：2015-03-17

申请号：US13575767

申请日：2011-01-28

申请人： Tomoyuki Adaniya ,  Satoshi Okabe ,  Toshiyuki Gotou ,  Taketo Maruyama ,  Kazuki Kobayashi ,  Keiichi Tanaka ,  Wataru Nakamura ,  Kenichi Kitoh ,  Tetsunori Tanaka

发明人： Tomoyuki Adaniya ,  Satoshi Okabe ,  Toshiyuki Gotou ,  Taketo Maruyama ,  Kazuki Kobayashi ,  Keiichi Tanaka ,  Wataru Nakamura ,  Kenichi Kitoh ,  Tetsunori Tanaka

IPC分类号： B44C1/22 ,  C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  C09K13/00 ,  C09K13/08 ,  H01L21/3213 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H05K3/06 ,  H01L23/532

CPC分类号： H01L21/32134 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L23/53238 ,  H01L2924/0002 ,  H05K3/067 ,  H01L2924/00

摘要： The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

摘要翻译： 本发明提供了一种用于含有铜层和钛层的多层薄膜的蚀刻液及其用于蚀刻含有铜层和钛层的多层薄膜的方法，即，用于 含有（A）过氧化氢，（B）硝酸，（C）氟化物离子源，（D）唑，（E）季铵氢氧化物和（F））的含有铜层和钛层的多层薄膜 ）过氧化氢稳定剂，pH为1.5〜2.5，使用其蚀刻方法。

公开(公告)号：US20120148012A1

公开(公告)日：2012-06-14

申请号：US12019103

申请日：2008-01-24

申请人： Takayuki ARAKAWA ,  Koichi Machida ,  Norio Kawashima ,  Kazuki Kobayashi ,  Yoshiharu Kikuchi

发明人： Takayuki ARAKAWA ,  Koichi Machida ,  Norio Kawashima ,  Kazuki Kobayashi ,  Yoshiharu Kikuchi

IPC分类号： G21C7/06

CPC分类号： G21C7/113 ,  G21C7/10 ,  Y02E30/39

摘要： A control rod includes a tie-rod, a handle mounted to an upper end portion of the tie-rod, either a connector plate or a fall velocity limiter mounted to a lower end portion of the tie-rod, sheaths having a U-shaped cross-section, welded intermittently to the tie-rod at a plurality of locations in the axial direction of the tie-rod, and having an upper end welded to the handle and a lower end welded to either the connector plate or the fall velocity limiter, and a neutron absorbing member disposed inside each of the sheaths. An upper end of a weld portion located at uppermost position in an axial direction of the tie-rod among a plurality of weld portions between the tie-rod and the sheath is disposed at a position within a range between 0.8 and 13% of total axial length Ls of the sheath below an upper end of the sheath.

摘要翻译： 控制杆包括拉杆，安装到拉杆的上端部分的手柄，安装到拉杆的下端部分的连接板或下落速度限制器，具有U形的护套 横截面，在连杆的轴向方向上的多个位置处间断地焊接到拉杆，并且具有焊接到手柄的上端，以及焊接到连接器板或下落速度限制器的下端 以及设置在每个护套内的中子吸收构件。 位于拉杆和护套之间的多个焊接部分中的位于拉杆的轴向方向上的最上位置处的焊接部分的上端设置在总轴向的0.8和13％之间的范围内的位置 在鞘的上端下方的鞘的长度Ls。

公开(公告)号：US06563174B2

公开(公告)日：2003-05-13

申请号：US10224879

申请日：2002-08-21

申请人： Masashi Kawasaki ,  Hideo Ohno ,  Kazuki Kobayashi ,  Ikuo Sakono

发明人： Masashi Kawasaki ,  Hideo Ohno ,  Kazuki Kobayashi ,  Ikuo Sakono

IPC分类号： H01L2701

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603

摘要： In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiNx having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO2). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer. This keeps a crystalline characteristic of the semiconductor layer under a preferable condition in the vicinity of the interface between the second insulating film and the semiconductor layer. As a result, it is possible to realize a thin film transistor such that: a leak current level at an OFF area is low, and the mobility is high, and a switching characteristic is preferable. Thus, in the thin film transistor having a transparent semiconductor film, a TFT characteristic is improved.

摘要翻译： 在薄膜晶体管中，在栅电极上形成具有第一绝缘膜和第二绝缘膜的栅极绝缘膜，并且在第二绝缘膜上形成包括ZnO等的半导体层。 第一绝缘膜通过使用具有高绝缘特性的SiNx形成，并且第二绝缘膜通过使用氧化物（例如，SiO 2）形成。 该结构改善了构成与第二绝缘膜结合的界面的半导体层的结晶特性，并降低了半导体层与第二绝缘膜之间的界面的缺陷水平。 此外，第二绝缘膜由氧化物构成，使得可以抑制第二绝缘膜的材料剥夺半导体层的氧。 这在第二绝缘膜和半导体层之间的界面附近的优选条件下保持半导体层的结晶特性。 结果，可以实现薄膜晶体管，使得在OFF区域的漏电流水平低，并且迁移率高，并且切换特性是优选的。 因此，在具有透明半导体膜的薄膜晶体管中，提高了TFT特性。

公开(公告)号：US06497240B1

公开(公告)日：2002-12-24

申请号：US09557052

申请日：2000-04-21

申请人： Kazuki Kobayashi ,  Toshiaki Muratani ,  Hiroto Yoshioka

发明人： Kazuki Kobayashi ,  Toshiaki Muratani ,  Hiroto Yoshioka

IPC分类号： B08B310

CPC分类号： H01L21/67051 ,  B08B3/022 ,  B08B2203/0288 ,  Y10S134/902

摘要： To provide an ultrasonic cleaning device (1) that ensures stable operation of a vibrating element for generating ultrasonic without a complex structure and distribution of a great quantity of a cleaning liquid and (2) that is capable of cleaning upper and lower surfaces of a cleaning target easily, an ultrasonic cleaning section of the device is provided with an upper cleaning-liquid-supply nozzle and a lower cleaning-liquid-supply nozzle for projection of ultrasonic. The upper cleaning-liquid-supply nozzle supplies an upper surface cleaning liquid to an upper surface of a glass substrate. The lower cleaning-liquid-supply nozzle supplies the lower surface cleaning liquid to a lower surface of the substrate in a form of shower to which ultrasonic has been projected. A vibrating element for generating ultrasonic to be projected to the lower surface cleaning liquid is provided in a cleaning liquid distribution path that extends from an upstream side to a downstream side in a direction in a range of a horizontal direction to an upward direction.

摘要翻译： 提供一种超声波清洗装置（1），其确保用于产生超声波的振动元件的稳定运行，而没有复杂的结构和大量的清洗液体的分布，以及（2）能够清洁清洁的上下表面的超声波清洗装置 所述装置的超声波清洗部设置有用于超声波投影的上部清洗液供给喷嘴和下部清洗液供给喷嘴。 上清洗液供给喷嘴将上表面清洗液供给到玻璃基板的上表面。 下部清洗液供给喷嘴将下表面清洗液以投射了超声波的喷淋形式向基板的下表面供给。 用于产生超声波的振动元件设置在从水平方向向上方的范围内的上游侧向下游侧延伸的清洗液分配路径中。

公开(公告)号：US08302388B2

公开(公告)日：2012-11-06

申请号：US12516845

申请日：2007-12-24

申请人： Kazuki Kobayashi ,  Hirofumi Kikkawa ,  Hiroshi Ishizaka ,  Hiroshi Takezaki ,  Hiroyuki Nosaka

发明人： Kazuki Kobayashi ,  Hirofumi Kikkawa ,  Hiroshi Ishizaka ,  Hiroshi Takezaki ,  Hiroyuki Nosaka

IPC分类号： F01N3/00

CPC分类号： F23J15/003 ,  B01D53/10 ,  B01D53/50 ,  B01D53/64 ,  B01D53/8625 ,  B01D2257/602 ,  F23J15/006 ,  F23J15/025 ,  F23J2215/60 ,  F23J2217/10 ,  F23J2219/40 ,  F23J2219/60 ,  F23J2219/70 ,  F23J2900/15081

摘要： After adjusting an exhaust gas temperature at an exit of a heat recovery unit (11) of an exhaust gas treating apparatus to not more than a dew point temperature of sulfur trioxide (SO3), a heavy metal adsorbent is supplied from a heavy metal adsorbent supply unit (16) disposed in an exhaust gas at an entrance of a precipitator (4) or an intermediate position within the precipitator (4), and the exhaust gas containing the heavy metal adsorbent is supplied into the precipitator (4). Preferably at this stage, the heavy metal adsorbent is supplied into the exhaust gas at the entrance of the precipitator (4) 0.1 seconds after the exhaust gas temperature at the exit of the heat recovery unit (11) has been adjusted to not more than the dew point temperature of SO3. Further preferably, in order to prevent acid corrosion of equipment, the heavy metal adsorbent is supplied after spraying an alkali into the exhaust gas at the entrance or exit of the heat recovery unit (11) and adjusting the exhaust gas temperature at the exit of the heat recovery unit to not more than the dew point temperature of SO3. Accordingly, even when coal with a high sulfur content is used as fuel, heavy metals in the exhaust gas can be removed effectively.

摘要翻译： 在废气处理装置的热回收单元（11）的出口处的排气温度调节至三氧化硫（SO3）的露点温度以下之前，重金属吸附剂由重金属吸附剂供给源 设置在除尘器（4）的入口处的排气中或者除尘器（4）内的中间位置的单元（16），并且将含有重金属吸附剂的排气供给到除尘器（4）中。 优选在此阶段，在热回收单元（11）的出口处的排气温度已经调整到不超过该温度的0.1秒之后，将重金属吸附剂供入到除尘器（4）入口处的废气中 露点温度SO3。 进一步优选为了防止设备的酸腐蚀，在热回收单元（11）的入口或出口处的排气中喷入碱后，再供给重金属吸附剂，并调节出口处的排气温度 热回收单位不得超过SO3的露点温度。 因此，即使使用具有高硫含量的煤作为燃料，也能够有效地除去废气中的重金属。

公开(公告)号：US20120243653A1

公开(公告)日：2012-09-27

申请号：US13372531

申请日：2012-02-14

申请人： Yu Kuwada ,  Kazuki Kobayashi ,  Norio Kawashima ,  Koichi Machida ,  Toraki Sakuma ,  Takeshi Tsukamoto ,  Hidekazu Takazawa

发明人： Yu Kuwada ,  Kazuki Kobayashi ,  Norio Kawashima ,  Koichi Machida ,  Toraki Sakuma ,  Takeshi Tsukamoto ,  Hidekazu Takazawa

IPC分类号： G21C7/10 ,  G21C21/18

CPC分类号： G21C7/113 ,  G21C21/18 ,  Y02E30/31 ,  Y02E30/39

摘要： A control rod has four blades, each of which has a rectangular cross section in a plane perpendicular to an axis of the control rod, disposed so as to form a cross-shaped cross section in the plane perpendicular to the axis. The blades include a plurality of aligned square tubes having a square cross section in a plane perpendicular to the axis and including a neutron absorber filling hole filled with neutron absorber, frame plates disposed parallel to the aligned square tubes in a direction perpendicular to a width direction of the blade, and on one side end and another side end of the blade in the width direction, respectively, and cover plates disposed along the width direction and sandwiching the aligned square tubes. Each blade has the aligned square tubes, the frame plates and the cover plates joined together as a single-piece construction by Hot Isostatic Pressing diffusion bonding.

摘要翻译： 控制杆具有四个叶片，每个叶片在垂直于控制棒的轴线的平面中具有矩形横截面，其设置成在垂直于轴线的平面中形成十字形横截面。 叶片包括多个排列的方管，在垂直于该轴线的平面中具有正方形截面，并且包括填充有中子吸收体的中子吸收器填充孔，与垂直于宽度方向的方向平行于对准的方管设置的框架板 以及在宽度方向上的叶片的一侧端部和另一侧端部以及沿着宽度方向设置的夹板和夹着对准的方形管的盖板。 每个叶片具有排列的方形管，框架板和盖板通过热等静压挤压粘合作为单件结构连接在一起。