摘要:
An inexpensive positive temperature coefficient thermistor has metal terminals which have been miniaturized without deteriorating the characteristics or sacrificing the reliability of the device. The metal terminals include supporting members and springs constructed such that a total width of the supporting members is smaller than a total width of the springs. In addition, connecting portions at the upper ends of the metal terminals engage with a case main body or a covering member to be retained at predetermined positions.
摘要:
A multi-layered panel wherein an interlayer material in a fluid state or in a solidified state transformed therefrom is provided between a pair of panels, comprises an internally-threaded member fitted in a through-hole formed in an outer one of the panels, and a cap capped on the internally-threaded member. The cap has a bottomed tubular-shaped body portion adapted to be brought into close contact with an outer peripheral surface of the internally-threaded member while sealing a threaded hole of the internally-threaded member, and a panel-contact contributing portion supported by the body portion, and adapted to be, at least partly, closely contactable with the outer panel.
摘要:
A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively.
摘要:
An image pickup apparatus includes an image sensor for simultaneously reading signals of adjoining two horizontal pixel rows by one-time horizontal scan; an electronic zoom circuit for enlargement-processing an output signal of the image sensor; an operation switch for instructing for on/off control of electronic zoom operation; and a scan method switching circuit for controlling scan method of the image sensor according to with an instruction from the operation switch. The scan method switching circuit exerts control so that, when the electronic zoom operation is turned on, a pair of two horizontal pixel rows to be read simultaneously in the odd and even fields are made identical, and when the electronic zoom operation is turned off, a pair of two horizontal pixel rows to be read simultaneously in the odd and even fields are shifted by one row in the vertical direction. In this image pickup apparatus, the positions of lines having high vertical frequency responses and those of lines having low vertical frequency responses are approximately reversed between the odd and even fields, so that the vertical frequency response is made uniform over the entire screen as a one-frame image.
摘要:
A color image pickup apparatus for correcting the sharpness of the luminance signal in a color image pickup system for taking out as different color signals for each of the horizontal lines the color information from the objects to be photographed with the use of a color image sensor having a color filter arrangement, whereby it is capable of correcting it even when the signals are saturated in the image sensor and the signal level between the adjacent two horizontal lines has been different in spite of the photographing the object which is the same in the signal level between two adjacent horizontal lines.
摘要:
A defect correction apparatus includes a memory having information of image failure of a solid state imaging device, a coincidence detection circuit for detecting a position of pixel having a failure at the time of image pick up, and a failure correction circuit. The failure correction circuit includes structure for producing plural signals for correction of signals of pixels around the pixel having the failure, and structure for selecting an optimum one from the produced plural signals, for correction responding to condition of the image and signals of the pixel therearound, and to use the selected optimum signal for correction by switching for the signal of the failure pixel.
摘要:
In a color imaging apparatus having a single chip solid state state sensor and an n color filter matrix, n color signals are used by an operation circuit in a first signal processing mode to generate chrominance signals and a luminance signal. When one of the n color signals reaches a saturation level, the operation circuit utilizes the remaining n-1 color signals. When a second color signal reaches the saturation level, a compensation signal is generated from a particular non-saturated color signal and the operation circuit utilizes the remaining n-2 non-saturated signals, including the particular non-saturated signal, and the compensation signal to produce the chrominance signals and the luminance signal. Compensation signals are generated from the particular signal until the particular color signal saturates. The particular color signal saturates last.
摘要:
A casing (11) for use in a freezing container is provided with a through hole (H) for insertion of the piping of a refrigerant circuit therethrough. Each opening end of the through hole (H) is covered over with a respective mesh sheet (31, 32). With each opening end of the through hole (H) covered over with the mesh sheet (31, 32), the tip end of a filling nozzle (33) is inserted until it reaches the middle of the through hole (H) and a sealant material is injected. The injected sealant material is held back within the through hole (H) by each mesh sheet (31, 32) and, with the progress of the injection of the sealant material, the air present in the through hole (H) is purged out through each mesh sheet (31, 32).
摘要:
A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively.
摘要:
Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.