公开(公告)号：US4347166A

公开(公告)日：1982-08-31

申请号：US014276

申请日：1979-02-22

申请人： Hiromi Tosaki ,  Hideo Arima ,  Teruo Mozume ,  Akira Ikegami ,  Tokio Isogai ,  Ichiro Tsubokawa

发明人： Hiromi Tosaki ,  Hideo Arima ,  Teruo Mozume ,  Akira Ikegami ,  Tokio Isogai ,  Ichiro Tsubokawa

IPC分类号： H01C7/04 ,  H01C17/065 ,  H01B1/06

CPC分类号： H01C17/06533 ,  H01C7/043

摘要： A thermistor composition comprises oxide powder of at least two of Mn, Co, and Ni, and an oxide powder of Ru as a noble metal.

摘要翻译： 热敏电阻组合物包含Mn，Co和Ni中的至少两种的氧化物粉末和作为贵金属的Ru的氧化物粉末。

公开(公告)号：US4160227A

公开(公告)日：1979-07-03

申请号：US778954

申请日：1977-03-18

申请人： Akira Ikegami ,  Hiromi Tosaki ,  Jun Yamada ,  Teruo Mozume ,  Ichiro Tsubokawa ,  Kiyoshi Sakashita

发明人： Akira Ikegami ,  Hiromi Tosaki ,  Jun Yamada ,  Teruo Mozume ,  Ichiro Tsubokawa ,  Kiyoshi Sakashita

IPC分类号： H01C7/04 ,  H01C17/065 ,  H01C7/10

CPC分类号： H01C17/0654 ,  C03C3/072 ,  C03C8/10 ,  C03C8/14 ,  C03C8/18 ,  H01C7/041

摘要： This specification discloses a thermistor composition comprising a thermistor characteristic powder, a bismuth containing borosilicate glass frit and an electrically conductive powder comprising a mixture of a noble metal powder and ruthenium oxide powder which is selected from RuO.sub.2 + Ag and RuO.sub.2 + Au wherein the mixing ratio of the metal oxide thermistor characteristic powder, the glass and the electrically conductive powder is in the area of the quadrilateral ABCD in the triangular diagram of the accompanying FIG. 1 and the amount of the ruthenium oxide powder is 15-95% by weight of total of the noble metal powder and the ruthenium oxide powder, the vertexes A, B, C and D of the quadrilateral ABCD being the points showing the following compositions:______________________________________ Sum of the amounts of The metal oxide the noble metal powder thermistor charac- and the ruthenium teristic powder oxide powder Glass frit (% by weight) (% by weight) (% by weight) ______________________________________ A 20 10 70 B 70 10 20 C 30 50 20 D 20 50 30 ______________________________________ This specification further discloses a thick film thermistor using said thermistor composition.

公开(公告)号：US4587040A

公开(公告)日：1986-05-06

申请号：US16166

申请日：1979-02-28

申请人： Hiromi Tosaki ,  Teruo Mozume ,  Hideo Arima ,  Akira Ikegami

发明人： Hiromi Tosaki ,  Teruo Mozume ,  Hideo Arima ,  Akira Ikegami

IPC分类号： H01C7/04 ,  H01C17/065 ,  H01B1/06

CPC分类号： H01C7/043 ,  H01C17/06533

摘要： A thick film thermistor composition is prepared by mixing metal oxide powders of at least two of Mn, Co and Ni, and oxide powder of Ru as a noble metal, firing the resulting mixture, thereby obtaining a compound oxide thermistor of spinel structure, pulverizing the resulting compound oxide thermistor, and mixing and kneading the resulting thermistor powder with glass powder and oxide powder of Ru for adjusting a resistance.

摘要翻译： 通过混合Mn，Co和Ni中的至少两种的金属氧化物粉末和Ru的氧化物粉末作为贵金属制备厚膜热敏电阻组合物，烧制所得混合物，从而获得尖晶石结构的复合氧化物热敏电阻， 得到的复合氧化物热敏电阻，并将所得热敏电阻粉末与玻璃粉末和Ru的氧化物粉末混合和捏合以调节电阻。

公开(公告)号：US4603008A

公开(公告)日：1986-07-29

申请号：US749279

申请日：1985-06-27

申请人： Hiromi Tosaki ,  Hideo Arima ,  Akira Ikegami ,  Yasuji Kamata

发明人： Hiromi Tosaki ,  Hideo Arima ,  Akira Ikegami ,  Yasuji Kamata

IPC分类号： H01C7/04 ,  H01B1/06

CPC分类号： H01C7/047 ,  Y10T29/49085

摘要： Disclosed herein is a critical temperature sensitive resistor material which comprises 60 to 90% by weight of VO.sub.2 and 40 to 10% by weight of RuO.sub.2. This material exhibits hysteresis of resistance that decreases remarkably over a temperature range in which the resistance varies greatly, and is hence used for measuring the temperature maintaining a high precision.

摘要翻译： 本文公开了一种临界温度敏感电阻材料，其包含60至90重量％的VO2和40至10重量％的RuO 2。 该材料表现出在电阻变化很大的温度范围内显着降低的电阻滞后性，因此用于维持高精度的温度测量。

公开(公告)号：US4547625A

公开(公告)日：1985-10-15

申请号：US511482

申请日：1983-07-07

申请人： Hiromi Tosaki ,  Hirayoshi Tanei ,  Akira Ikegami ,  Nobuyuki Sugishita

发明人： Hiromi Tosaki ,  Hirayoshi Tanei ,  Akira Ikegami ,  Nobuyuki Sugishita

IPC分类号： H05K3/46 ,  C03C3/108 ,  H01L21/48 ,  H01L23/538 ,  H05K1/00 ,  H05K1/03

CPC分类号： H01L21/4807 ,  C03C3/108 ,  H01L23/5383 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/4629 ,  H05K3/4676 ,  Y10S428/901 ,  Y10T428/24322

摘要： A method for manufacturing the insulating layers of a glass multilayer wiring board from a mixture of (1) 30-90 wt. % of a borosilicate glass consisting of 55-75 wt. % of SiO.sub.2, 13-25 wt. % of B.sub.2 O.sub.3, 5-13 wt. % of Al.sub.2 O.sub.3, each 1-5 wt. % of PbO, MgO, and BaO, and each 1-2 wt. % of Na.sub.2 O and K.sub.2 O and (2) 70-10 wt. % of a silica glass, is provided.

摘要翻译： 一种由（1）30-90重量％的混合物制造玻璃多层布线板的绝缘层的方法， ％的硼硅酸盐玻璃由55-75wt。 ％的SiO 2，13-25wt。 B2O3％，5-13wt。 ％的Al2O3，每1-5wt。 ％的PbO，MgO和BaO，以及每1-2wt。 ％的Na2O和K2O和（2）70-10wt。 提供了二氧化硅玻璃的百分数。

公开(公告)号：US4490429A

公开(公告)日：1984-12-25

申请号：US398862

申请日：1982-07-16

申请人： Hiromi Tosaki ,  Nobuyuki Sugishita ,  Akira Ikegami

发明人： Hiromi Tosaki ,  Nobuyuki Sugishita ,  Akira Ikegami

IPC分类号： H01L27/01 ,  H05K1/03 ,  H05K1/09 ,  H05K1/16 ,  H05K3/46 ,  B32B3/00

CPC分类号： H01L27/01 ,  H05K1/0306 ,  H05K1/16 ,  H05K1/092 ,  H05K1/162 ,  H05K1/167 ,  H05K3/4644 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/24802 ,  Y10T428/24876 ,  Y10T428/24926

摘要： The multilayer circuit board is constituted of an inorganic insulating material such as a crystallizable glass, crystalline oxide or noncrystallized glass; a conductive material such as a metal or a mixture of a metal with noncrystallized glass; a resistor material consisting of a mixture of a conductive material with the crystallizable glass or noncrystallized glass; and a dielectric material consisting of a mixture of a barium titanate-other oxide mixture with the noncrystallized glass or crystallizable glass, of a lead-containing perovskite type oxide or of a lead-containing laminar bismuth oxide, said board has a multilayer structure wherein a first insulating layer; a first resistor circuit or alternatively first capacitor circuit or alternatively first resistor-capacitor circuit; a second insulating layer; a second resistor circuit or alternatively second capacitor circuit or alternatively second resistor-capacitor circuit are superposed in this order, provided that the second insulating layer has a through-hole(s) filled with the conductive material, and a process for producing the same.

摘要翻译： 多层电路板由可结晶玻璃，结晶氧化物或非结晶玻璃等无机绝缘材料构成， 导电材料如金属或金属与非结晶玻璃的混合物; 由导电材料与可结晶玻璃或非结晶玻璃的混合物组成的电阻材料; 以及由钛酸钡 - 其他氧化物混合物与非结晶玻璃或可结晶玻璃，含铅钙钛矿型氧化物或含铅层状铋氧化物的混合物组成的介电材料，所述板具有多层结构，其中， 第一绝缘层; 第一电阻器电路或第一电容器电路或第一电阻器电容器电路; 第二绝缘层; 如果第二绝缘层具有填充有导电材料的通孔，则第二电阻器电路或第二电容器电路或第二电阻器电容器电路以该顺序重叠，以及制造该第二电阻器电路的方法。

公开(公告)号：US4608316A

公开(公告)日：1986-08-26

申请号：US776879

申请日：1985-09-17

申请人： Gyozo Toda ,  Tsuyoshi Fujita ,  Hiromi Tosaki ,  Takashi Kuroki

发明人： Gyozo Toda ,  Tsuyoshi Fujita ,  Hiromi Tosaki ,  Takashi Kuroki

IPC分类号： C04B35/14 ,  C04B38/00 ,  C04B38/06 ,  H01L21/48 ,  H01L23/15 ,  H05K1/03 ,  B32B9/00

CPC分类号： H01L23/15 ,  H01L21/4807 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  Y10S428/901 ,  Y10T428/24926

摘要： A ceramic wiring board comprising a silica board having pores of several ten to several hundred .ANG. in diameter amounting to 5 to 20 vol % of the insulating layer, and a process for producing the same, which comprises heat-treating a silicon alkoxide to form a fine silica powder and sintering the fine powder. This board has good mechanical characteristics and a high signal propagation speed.

摘要翻译： 一种陶瓷布线板，其特征在于，包括具有绝缘层的5〜20体积％的直径为数十〜数百埃的孔的二氧化硅基板及其制造方法，其包括热处理硅醇盐以形成 细二氧化硅粉末烧结细粉。 该板具有良好的机械特性和较高的信号传播速度。

公开(公告)号：US06272020B1

公开(公告)日：2001-08-07

申请号：US09173174

申请日：1998-10-15

申请人： Hiromi Tosaki ,  Takaji Takenaka ,  Kazutoshi Takahashi ,  Norio Sengoku ,  Toshitada Netsu

发明人： Hiromi Tosaki ,  Takaji Takenaka ,  Kazutoshi Takahashi ,  Norio Sengoku ,  Toshitada Netsu

IPC分类号： H05K116

CPC分类号： H01L23/50 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/15159 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19106 ,  H05K1/0231 ,  H05K1/145 ,  H05K1/183 ,  H05K3/301 ,  H05K2201/10424 ,  H05K2201/1053 ,  H05K2201/10734

摘要： A semiconductor device-mounting substrate is provided with a semiconductor device, a capacitor device, and a wiring substrate. The wiring substrate has a space in which the capacitor device should be located, and the capacitor device is locate in the space. Terminals of a driving power supply wiring for the semiconductor device are provided on a surface of the space, and the terminals are connected with the capacitor device.

摘要翻译： 半导体器件安装基板设置有半导体器件，电容器器件和布线基板。 布线基板具有电容器装置所在的空间，电容器装置位于该空间中。 用于半导体器件的驱动电源布线的端子设置在该空间的表面上，并且端子与电容器器件连接。