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22 条记录 (耗时 0.024 秒)

    Gas detection device and method for detecting gas
    3.
    发明授权
    Gas detection device and method for detecting gas 失效
    气体检测装置及气体检测方法

    公开(公告)号：US4457161A

    公开(公告)日：1984-07-03

    申请号：US366304

    申请日：1981-04-07

    申请人： Shoichi Iwanaga ,  Nobuo Sato ,  Akira Ikegami ,  Tokio Isogai ,  Takanobu Noro ,  Hideo Arima

    发明人： Shoichi Iwanaga ,  Nobuo Sato ,  Akira Ikegami ,  Tokio Isogai ,  Takanobu Noro ,  Hideo Arima

    IPC分类号： G01N27/04 ,  G01N27/12 ,  G01N33/00

    CPC分类号： G01N33/0031 ,  G01N27/12

    摘要： A gas detection device and a method for detecting a gas where gas information including concentrations of gas components in a mixed gas, concentration, presence of specific gas components and the like is detected by measuring, e.g., the output voltages of a plurality of gas sensors having different gas selectivities. The gas selectivities, as a characteristic constant of the specific gas sensor, was previously determined. The measured output voltages and gas selectivities are then used for solving plural simultaneous equations for gas concentrations.

    摘要翻译： 一种气体检测装置和气体检测方法，其中气体信息包括混合气体中气体组分的浓度，浓度，特定气体组分的存在等，通过测量多个气体传感器的输出电压 具有不同的气体选择性。 作为特定气体传感器的特性常数，气体选择性是先前确定的。 然后测量的输出电压和气体选择性用于求解气体浓度的多个联立方程。

    Gas detecting apparatus
    4.
    发明授权
    Gas detecting apparatus 失效
    气体检测装置

    公开(公告)号：US4586143A

    公开(公告)日：1986-04-29

    申请号：US461743

    申请日：1983-01-28

    申请人： Masayoshi Kaneyasu ,  Takanobu Noro ,  Hideo Arima ,  Mitsuko Ito ,  Shoichi Iwanaga ,  Nobuo Sato ,  Akira Ikegami ,  Tokio Isogai

    发明人： Masayoshi Kaneyasu ,  Takanobu Noro ,  Hideo Arima ,  Mitsuko Ito ,  Shoichi Iwanaga ,  Nobuo Sato ,  Akira Ikegami ,  Tokio Isogai

    IPC分类号： G01N27/04 ,  G01N27/12 ,  G01N33/00

    CPC分类号： G01N27/122 ,  G01N33/0031

    摘要： A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements different in gas detection characteristic from each other and previously-obtained characteristic values of the semiconductor gas detecting elements for a mixed gas are subjected to operational processing to detect one or more specified constituent gases contained in the mixed gas, and in which when the specified constituent gas is detected, the detection information is announced by some means, and also the supply of gas is stopped or a supply gas is diluted.

    摘要翻译： 公开了一种气体检测装置，其中来自多个气体检测特性不同的半导体气体检测元件和先前获得的用于混合气体的半导体气体检测元件的特征值的检测输出进行操作处理以检测一个 或更多的特定构成气体，并且当检测到特定构成气体时，通过某种手段宣布检测信息，并且停止供给气体或者供给气体被稀释。

    Low temperature-sinterable dielectric composition and thick film capacitor using the same
    6.
    发明授权
    Low temperature-sinterable dielectric composition and thick film capacitor using the same 失效
    低温烧结电介质组合物和使用其的厚膜电容器

    公开(公告)号：US4308571A

    公开(公告)日：1981-12-29

    申请号：US134281

    申请日：1980-03-26

    申请人： Hirayoshi Tanei ,  Akira Ikegami ,  Noriyuki Taguchi ,  Katsuo Abe ,  Hiroshi Ohtsu ,  Tokio Isogai

    发明人： Hirayoshi Tanei ,  Akira Ikegami ,  Noriyuki Taguchi ,  Katsuo Abe ,  Hiroshi Ohtsu ,  Tokio Isogai

    IPC分类号： C04B35/46 ,  C04B35/472 ,  C04B35/499 ,  H01B3/12 ,  H01G4/12

    CPC分类号： H01G4/1263 ,  C04B35/472 ,  C04B35/499

    摘要： A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.

    摘要翻译： 提供了一种低温可烧结电介质组合物，其烧结组合物通过在不高于1000℃的温度下焙烧由钨酸铅，钛酸铅和二氧化锰组成的均匀混合物制备，具有通式A.Pb（Fe2 其中0.005≤x≤0.65，A = 0.95-0.9995和B = 0.0005-0.05，在25℃下的相对介电常数至少为2000。 ，在25℃下的损耗因子（tanδ）不超过5％，在25℃下的电阻率为至少为10Ω.EGEGA·cm。还提供了一种厚膜电容器，其具有由所述 组成。

    Process for forming metallic image
    8.
    发明授权
    Process for forming metallic image 失效
    金属图像形成工艺

    公开(公告)号：US4347304A

    公开(公告)日：1982-08-31

    申请号：US277049

    申请日：1981-06-24

    申请人： Hideki Sakurai ,  Mitsuo Nakatani ,  Hitoshi Oka ,  Hitoshi Yokono ,  Tokio Isogai

    发明人： Hideki Sakurai ,  Mitsuo Nakatani ,  Hitoshi Oka ,  Hitoshi Yokono ,  Tokio Isogai

    IPC分类号： G03C5/58 ,  G03F7/004 ,  H05K3/18 ,  G03C5/00

    CPC分类号： H05K3/185 ,  G03C5/58 ,  G03F7/0043 ,  Y10S430/143

    摘要： Metallic images of uniform quality can be formed on substrates having through-holes by a process using a positive type resist characterized by using as a coating solution for the substrate a solution of a photosensitive material of (a) at least one organic compound having at least one linkage of --M--M--M ).sub.n (M=Si, Ge or Sn; n=0, 1 or more) in the molecule or (b) a mixture of at least one organic compound (a) mentioned above and at least one photosensitizer, dissolved in a solvent such as a halogenated hydrocarbon, an aromatic hydrocarbon, a heterocyclic compound, or a mixture thereof, followed by irradiation with an actinic light through a photomask and electroless plating.

    摘要翻译： 可以通过使用正型抗蚀剂的方法在具有通孔的基板上形成具有均匀质量的金属图像，其特征在于使用作为基底的涂布溶液的（a）至少一种有机化合物的感光材料的溶液，所述有机化合物至少具有 分子中nMM（M = Si，Ge或Sn; n = 0,1或更多）的一个连接，或（b）上述至少一种有机化合物（a）和至少一种光敏剂的混合物， 溶解在溶剂如卤代烃，芳族烃，杂环化合物或其混合物中，然后通过光掩模和化学镀被光化的光照射。

    Process for producing solar cells
    10.
    发明授权
    Process for producing solar cells 失效
    太阳能电池生产工艺

    公开(公告)号：US4643913A

    公开(公告)日：1987-02-17

    申请号：US687162

    申请日：1984-12-28

    申请人： Masaaki Okunaka ,  Mitsuo Nakatani ,  Haruhiko Matsuyama ,  Hitoshi Yokono ,  Tokio Isogai ,  Tadashi Saitoh ,  Kunihiro Matsukuma ,  Sumiyuki Midorikawa ,  Satoru Suzuki

    发明人： Masaaki Okunaka ,  Mitsuo Nakatani ,  Haruhiko Matsuyama ,  Hitoshi Yokono ,  Tokio Isogai ,  Tadashi Saitoh ,  Kunihiro Matsukuma ,  Sumiyuki Midorikawa ,  Satoru Suzuki

    IPC分类号： H01L31/04 ,  C07F7/00 ,  H01L21/283 ,  H01L21/288 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： C07F7/006 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.n

    摘要翻译： 一种太阳能电池的制造方法，其特征在于，在具有pn结的硅基板的一面上涂布抗反射涂层用组合物，在所述涂层的规定区域印刷用于接触形成的Ag浆料，并对所述涂料进行热处理 得到的板在400-900℃的温度下完成防反射涂层和光接收侧接触，其特征在于用于防反射涂层形成的组合物包含作为必要组分的（a）在 选自由通式M（OR1）n（L）a表示的金属 - 有机配体络合物中的至少一种成分其中M是选自Zn，Al，Ga，In，Ti，Zr，Sn，V，Nb ，Ta，Mo和W; R1是C1-C18烷基; L是与金属离子形成不可水解键的有机配体; a为金属M的化合价; n为1，n为1的整数，通式（OR 1）n-1M（L）anOM（OR 1）n-1（L）a表示的水解缩合物，（b） 化合物，和（c）溶剂。