摘要:
A piezoelectric element in accordance with the present invention includes a base substrate, and a piezoelectric film formed above the base substrate, wherein the piezoelectric film is composed of a plurality of layers, at least two layers among the plurality of layers are composed of different relaxor materials, and the relaxor materials have a perovskite structure.
摘要:
A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, and a piezoelectric film formed above the buffer layer, wherein the buffer layer is formed of Pb ((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0≦x≦1, and y is in a range of 0.05≦y≦0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.
摘要翻译:压电元件包括基底基板,形成在基底基板上的缓冲层,以及形成在缓冲层之上的压电膜,其中缓冲层由Pb((Zr 1-x Ti) 其中x在0的范围内的钙钛矿型,其中x在0的范围内 <= x <= 1,y在0.05 <= y <0.3的范围内,并且压电膜由钙钛矿型的弛豫材料形成。
摘要:
A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, and a piezoelectric film formed above the buffer layer, wherein the buffer layer is formed of Pb ((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0≦x≦1, and y is in a range of 0.05≦y≦0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.
摘要翻译:压电元件包括基底基板,形成在基底基板上的缓冲层,以及形成在缓冲层之上的压电膜,其中缓冲层由Pb((Zr 1-x Ti) 其中x在0的范围内的钙钛矿型,其中x在0的范围内 <= x <= 1,y在0.05 <= y <0.3的范围内,并且压电膜由钙钛矿型的弛豫材料形成。
摘要:
A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, a piezoelectric film formed above the buffer layer, and a barrier layer formed above the piezoelectric film, wherein the buffer layer and the barrier layer are formed of Pb((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0≦x≦1, and y is in a range of 0.05≦y≦0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.
摘要翻译:压电元件包括基底基板,形成在基底基板上的缓冲层,形成在缓冲层之上的压电薄膜和形成在压电薄膜上的阻挡层,其中缓冲层和阻挡层由Pb(( Zr 1-x Ti x 1)y-1 x Y y O 3) 的钙钛矿型,其中x在0 <= x <= 1的范围内,y在0.05 <= y <0.3的范围内,并且压电膜由钙钛矿型的弛豫材料形成。
摘要:
A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, a piezoelectric film formed above the buffer layer, and a barrier layer formed above the piezoelectric film, wherein the buffer layer and the barrier layer are formed of Pb((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0≦x≦1, and y is in a range of 0.05≦y≦0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.
摘要翻译:压电元件包括基底基板,形成在基底基板上的缓冲层,形成在缓冲层之上的压电薄膜和形成在压电薄膜上的阻挡层,其中缓冲层和阻挡层由Pb(( Zr 1-x Ti x 1)y-1 x Y y O 3) 的钙钛矿型,其中x在0 <= x <= 1的范围内,y在0.05 <= y <0.3的范围内,并且压电膜由钙钛矿型的弛豫材料形成。
摘要:
A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).
摘要:
A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).
摘要:
A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).
摘要:
A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).
摘要:
A capacitor is provided having a structure in which an insulation film is interposed between a first electrode and a second electrode. The insulation film includes SrTiO3 as a main component, and at least one of Si and Ge added thereto.