公开(公告)号：US08227346B2

公开(公告)日：2012-07-24

申请号：US13306654

申请日：2011-11-29

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/44

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。

公开(公告)号：US20120077350A1

公开(公告)日：2012-03-29

申请号：US13306654

申请日：2011-11-29

申请人： Hironobu MIYA ,  Kazuyuki TOYODA ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu MIYA ,  Kazuyuki TOYODA ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/31

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。

公开(公告)号：US20100233887A1

公开(公告)日：2010-09-16

申请号：US12788697

申请日：2010-05-27

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.

摘要翻译： 一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体 第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤 从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体 在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的 施加指定次数，直到在基板表面上形成所需厚度的膜。

公开(公告)号：US08105957B2

公开(公告)日：2012-01-31

申请号：US12415821

申请日：2009-03-31

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Masayuki Asai ,  Norikazu Mizuno ,  Masanori Sakai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Masayuki Asai ,  Norikazu Mizuno ,  Masanori Sakai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/469

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

公开(公告)号：US07779785B2

公开(公告)日：2010-08-24

申请号：US11666360

申请日：2006-02-15

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： C23C16/00

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。

公开(公告)号：US20090280652A1

公开(公告)日：2009-11-12

申请号：US12415821

申请日：2009-03-31

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/31

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。

公开(公告)号：US20120034790A9

公开(公告)日：2012-02-09

申请号：US12415821

申请日：2009-03-31

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/31

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

公开(公告)号：US08039404B2

公开(公告)日：2011-10-18

申请号：US12788697

申请日：2010-05-27

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/469

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.

摘要翻译： 一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体 第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤 从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体 在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的 施加指定次数，直到在基板表面上形成所需厚度的膜。

公开(公告)号：US20080124945A1

公开(公告)日：2008-05-29

申请号：US11666360

申请日：2006-02-15

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/469 ,  C23C16/52

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。

公开(公告)号：US20080166882A1

公开(公告)日：2008-07-10

申请号：US11664726

申请日：2005-10-05

申请人： Hironobu Miya ,  Taketoshi Sato ,  Norikazu Mizuno ,  Masanori Sakai ,  Takaaki Noda

发明人： Hironobu Miya ,  Taketoshi Sato ,  Norikazu Mizuno ,  Masanori Sakai ,  Takaaki Noda

IPC分类号： H01L21/02 ,  H01L21/20

CPC分类号： C23C16/45536 ,  C23C16/345 ,  C23C16/452 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/67017 ,  H01L21/67109

摘要： A substrate treating apparatus is provided with a treatment chamber, a holding member, a heating member, and supplying members for alternately supplying the treatment chamber with first and second reacting substances. The apparatus is provided for forming a thin film on a substrate by supplying the first reacting substance to have the first reacting substance adsorbed on the substrate, removing the excess first reacting substance, then, supplying the second reacting substance to have it adsorbed on the substrate, and reacting it with the first reacting substance. The apparatus is provided with a control part for permitting the apparatus to perform the thin film forming treatment in a status where the number of product substrates lacks, in the case where the number of sheets of the product substrates held by the holding member is less than the maximum number of the product substrates that can be held by the holding member.

摘要翻译： 基板处理装置设置有处理室，保持构件，加热构件和用于向处理室交替地供给第一和第二反应物质的供给构件。 该装置用于通过供给第一反应物质使第一反应物质吸附在基板上，除去过量的第一反应物质，然后供给第二反应物质使其吸附在基板上而在基板上形成薄膜 并使其与第一反应物质反应。 该设备设置有控制部件，用于允许设备在产品基板的数量不足的状态下进行薄膜形成处理，在由保持部件保持的产品基板的张数少于 可由保持构件保持的产品基板的最大数量。