公开(公告)号：US20120077350A1

公开(公告)日：2012-03-29

申请号：US13306654

申请日：2011-11-29

申请人： Hironobu MIYA ,  Kazuyuki TOYODA ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu MIYA ,  Kazuyuki TOYODA ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/31

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。

公开(公告)号：US20110045675A1

公开(公告)日：2011-02-24

申请号：US12916920

申请日：2010-11-01

申请人： Hironobu MIYA ,  Taketoshi Sato ,  Norikazu Mizuno ,  Masanori Sakai ,  Takaaki Noda

发明人： Hironobu MIYA ,  Taketoshi Sato ,  Norikazu Mizuno ,  Masanori Sakai ,  Takaaki Noda

IPC分类号： H01L21/30 ,  C23C16/455

CPC分类号： C23C16/45536 ,  C23C16/345 ,  C23C16/452 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/67017 ,  H01L21/67109

摘要： Disclosed is a substrate processing apparatus, comprising a processing chamber, a holder to hold at least a plurality of product substrates, a heating member, a supplying member to alternately supply at least a first reactant and a second reactant, and a control unit, wherein the control unit executes forming thin films on the substrates by supplying the first reactant, removing a surplus of the first reactant after the first reactant has been adsorbed on the product substrates, subsequently supplying the second reactant, to cause the second reactant to react with the first reactant adsorbed on the substrates, and executes the forming the thin films in a state where a number of the product substrates is insufficient when a number of the product substrates is less than a maximum number of the product substrates which can be held by the holder.

摘要翻译： 公开了一种基板处理装置，包括处理室，用于保持至少多个产品基板的保持器，加热构件，供应构件以交替地供应至少第一反应物和第二反应物，以及控制单元，其中 所述控制单元通过供给所述第一反应物，在所述基板上形成薄膜，在所述第一反应物被吸附在所述产物基板上之后除去剩余的所述第一反应物，随后供给所述第二反应物，以使所述第二反应物与所述第二反应物反应 第一反应物吸附在基板上，并且当产品基板的数量少于可由保持件保持的产品基板的最大数量时，在多个产品基板不足的状态下执行薄膜的形成 。

公开(公告)号：US20100087069A1

公开(公告)日：2010-04-08

申请号：US12571688

申请日：2009-10-01

申请人： Hironobu MIYA ,  Kazuyuki Toyoda ,  Masanori Sakai ,  Norikazu Mizuno ,  Tsutomu Kato ,  Yuji Takebayashi ,  Kenji Ono ,  Atsushi Morikawa ,  Satoshi Okada

发明人： Hironobu MIYA ,  Kazuyuki Toyoda ,  Masanori Sakai ,  Norikazu Mizuno ,  Tsutomu Kato ,  Yuji Takebayashi ,  Kenji Ono ,  Atsushi Morikawa ,  Satoshi Okada

IPC分类号： H01L21/316 ,  C23C16/46 ,  C23C16/513

CPC分类号： C23C16/405 ,  C23C16/483 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31641 ,  H01L21/31645

摘要： The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.

摘要翻译： 可以提高氧化膜的覆盖特性或负载效果，而不必增加氧化剂的供给量或时间。 提供了制造半导体器件的方法。 该方法包括将至少一个衬底装载到处理室; 通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从所述处理室中卸载所述基板，其中，通过将所述基板保持在所述第一反应材料的自身分解温度以下并且向所述第二反应材料照射紫外线的温度进行氧化膜的形成。

公开(公告)号：US20120258566A1

公开(公告)日：2012-10-11

申请号：US13427419

申请日：2012-03-22

申请人： Eisuke NISHITANI ,  Yasuo KUNII ,  Kazuyuki TOYODA ,  Hironobu MIYA

发明人： Eisuke NISHITANI ,  Yasuo KUNII ,  Kazuyuki TOYODA ,  Hironobu MIYA

IPC分类号： H01L31/18 ,  C23C16/455 ,  H01L21/06

CPC分类号： H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material.

摘要翻译： 提供了一种基板处理装置，包括：处理室，被配置为容纳多个基板，其上形成有由铜铟，铜镓或铜铟镓中的任一种构成的层压膜; 气体供给管，其构造成将含有元素的含硒气体或元素含硫气体引入所述处理室中; 排气管，其构造成排出处理室中的气氛; 以及设置成围绕反应管的加热部，其中反应管的基部由金属材料制成。