公开(公告)号：US06896571B2

公开(公告)日：2005-05-24

申请号：US10372853

申请日：2003-02-26

申请人： Hironobu Mizuno ,  Takashi Iwaki ,  Toshihiko Takeda ,  Noritake Suzuki ,  Kazuya Miyazaki ,  Koki Nukanobu

发明人： Hironobu Mizuno ,  Takashi Iwaki ,  Toshihiko Takeda ,  Noritake Suzuki ,  Kazuya Miyazaki ,  Koki Nukanobu

IPC分类号： H01J9/02 ,  H01J1/316 ,  H01J9/00 ,  H01J9/04 ,  H01J9/24 ,  H01J31/12

CPC分类号： H01J9/027 ,  H01J31/127

摘要： In a process of reducing a resistivity of a polymer film for carbonization in a surface conduction electron-emitting device, by irradiating an energy beam onto the polymer film, when an energy intensity of the beam given in a unit area in a unit time is assumed to be W W/m2, W satisfies a formula W≧2×T×(ρsub·Csub·λsub/τ)1/2, where T is defined as a temperature ° C. at which the polymer film is heated for one hour in a vacuum degree of 1×10−4 Pa to reduce a resistivity of the polymer film to 0.1 Ω·cm, Csub is a specific heat J/kg·K of the substrate, ρsub is a specific gravity kg/m3 of the substrate, λsub is a heat conductivity W/m·K of the substrate, and τ is an irradiation time in the range of 10−9 sec to 10 sec.

摘要翻译： 在降低表面传导电子发射器件中用于碳化的聚合物膜的电阻率的过程中，通过将能量束照射到聚合物膜上，当在单位时间内以单位面积给出的光束的能量强度为假定时 W满足公式W> = 2xTx（rho>>> ambda / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / 其中T定义为聚合物膜在1×10 -4真空度下加热1小时的温度℃ > Pa以将聚合物膜的电阻率降低至0.1Ω·cm，C _{SUB是基质的比热J / kg.K，特别是碱 衬底的重力kg / m 3，λ是衬底的热传导率W / mK，τ是在10°范围内的照射时间， -9秒至10秒。}

公开(公告)号：US20050164591A1

公开(公告)日：2005-07-28

申请号：US11082785

申请日：2005-03-18

申请人： Hironobu Mizuno ,  Takashi Iwaki ,  Toshihiko Takeda ,  Kazuya Miyazaki ,  Koki Nukanobu

发明人： Hironobu Mizuno ,  Takashi Iwaki ,  Toshihiko Takeda ,  Kazuya Miyazaki ,  Koki Nukanobu

IPC分类号： H01J9/02 ,  H01J1/316 ,  H01J9/00 ,  H01J9/04 ,  H01J9/24 ,  H01J31/12

CPC分类号： H01J9/027 ,  H01J31/127

摘要： In a process of reducing a resistivity of a polymer film for carbonization in a surface conduction electron-emitting device, by irradiating an energy beam onto the polymer film, when an energy intensity of the beam given in a unit area in a unit time is assumed to be W W/m2, W satisfies a formula W≧2×T×(ρsub·Csub·λsub/τ)1/2, where T is defined as a temperature ° C. at which the polymer film is heated for one hour in a vacuum degree of 1×10−4 Pa to reduce a resistivity of the polymer film to 0.1 Ω·cm, Csub is a specific heat J/kg·K of the substrate, ρsub is a specific gravity kg/m3 of the substrate, λsub is a heat conductivity W/m·K of the substrate, and τ is an irradiation time in the range of 10−9 sec to 10 sec.

摘要翻译： 在降低表面传导电子发射器件中用于碳化的聚合物膜的电阻率的过程中，通过将能量束照射到聚合物膜上，当在单位时间内以单位面积给出的光束的能量强度为假定时 W满足公式W> = 2 xTx（rho＆lt; sub＆gt;。＆lt; sub＆lt; sub＆lt; sub＆lt; 其中T定义为在1×10 -4真空度下将聚合物膜加热1小时的温度℃， SUP> Pa以将聚合物膜的电阻率降低至0.1Ω·cm，C _{SUB是基材的比热J / kg.K， 衬底的比重为kg / m 3，λ为衬底的热导率W / mK，τ为10 -9 秒至10秒。}

公开(公告)号：US07077716B2

公开(公告)日：2006-07-18

申请号：US11082785

申请日：2005-03-18

申请人： Hironobu Mizuno ,  Takashi Iwaki ,  Toshihiko Takeda ,  Kazuya Miyazaki ,  Koki Nukanobu

发明人： Hironobu Mizuno ,  Takashi Iwaki ,  Toshihiko Takeda ,  Kazuya Miyazaki ,  Koki Nukanobu

IPC分类号： H01J9/00

CPC分类号： H01J9/027 ,  H01J31/127

摘要： In a process of reducing a resistivity of a polymer film for carbonization in a surface conduction electron-emitting device, by irradiating an energy beam onto the polymer film, when an energy intensity of the beam given in a unit area in a unit time is assumed to be W W/m2, W satisfies a formula W≧2×T×(ρsub·Csub·λsub/τ)1/2, where T is defined as a temperature ° C. at which the polymer film is heated for one hour in a vacuum degree of 1×10−4 Pa to reduce a resistivity of the polymer film to 0.1 Ω·cm, Csub is a specific heat J/kg·K of the substrate, ρsub is a specific gravity kg/m3 of the substrate, λsub is a heat conductivity W/m·K of the substrate, and τ is an irradiation time in the range of 10−9 sec to 10 sec.

摘要翻译： 在降低表面传导电子发射器件中用于碳化的聚合物膜的电阻率的过程中，通过将能量束照射到聚合物膜上，当在单位时间内以单位面积给出的光束的能量强度为假定时 W满足公式W> = 2xTx（rho＆lt; sub＆gt;。＆lt; sub＆lt; sub＆gt;＆lt; 其中T定义为聚合物膜在1×10 -4真空度下加热1小时的温度℃ > Pa以将聚合物膜的电阻率降低至0.1Ω·cm，C _{SUB是基质的比热J / kg.K，特别是碱 衬底的重力kg / m 3，λ是衬底的热传导率W / mK，τ是在10°范围内的照射时间， -9秒至10秒。}

公开(公告)号：US20090284119A1

公开(公告)日：2009-11-19

申请号：US12429332

申请日：2009-04-24

申请人： Toshihiko Takeda ,  Takeo Tsukamoto ,  Koki Nukanobu ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Takeo Tsukamoto ,  Koki Nukanobu ,  Takuto Moriguchi

IPC分类号： H01J1/88

CPC分类号： H01J1/316 ,  H01J29/04 ,  H01J31/127 ,  H01J2329/0486

摘要： The present invention provides an electron-emitting device which does not need a fresh electrode to be added thereto, has excellent convergence and shows little change of a discharged electric current for short and long periods of time, and an image display apparatus using the device. The electron-emitting device includes at least a pair of device electrodes formed on an insulating substrate, and a plurality of electroconductive films which are formed so as to connect the device electrodes to each other and have gaps therein, wherein the surface of a region which is at least adjacent to the gap between the electroconductive films and is not covered with the electroconductive film is higher than the surface of the electroconductive film.

摘要翻译： 本发明提供一种不需要添加新鲜电极的电子发射器件，具有良好的会聚性，并且短时间和长时间内放电电流几乎没有变化，以及使用该器件的图像显示装置。 电子发射器件至少包括一对形成在绝缘衬底上的器件电极，以及多个导电膜，其形成为将器件电极彼此连接并且在其中具有间隙，其中， 至少与导电膜之间的间隙相邻并且不被导电膜覆盖的高于导电膜的表面。

公开(公告)号：US20090273274A1

公开(公告)日：2009-11-05

申请号：US12502451

申请日：2009-07-14

申请人： Toshihiko Takeda ,  Koki Nukanobu ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Koki Nukanobu ,  Takuto Moriguchi

IPC分类号： H01J1/62

CPC分类号： H01J9/027

摘要： A method for manufacturing a precursor to an electron-emitting device includes the steps of preparing an electron-emitting member, and alternately exposing the electron-emitting member to an oxygen-containing gas and a metal-containing gas.

摘要翻译： 用于制造电子发射器件的前体的方法包括制备电子发射部件，并将电子发射部件交替暴露于含氧气体和含金属气体的步骤。

公开(公告)号：US08080933B2

公开(公告)日：2011-12-20

申请号：US12429332

申请日：2009-04-24

申请人： Toshihiko Takeda ,  Takeo Tsukamoto ,  Koki Nukanobu ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Takeo Tsukamoto ,  Koki Nukanobu ,  Takuto Moriguchi

IPC分类号： H01J1/62

CPC分类号： H01J1/316 ,  H01J29/04 ,  H01J31/127 ,  H01J2329/0486

摘要： The present invention provides an electron-emitting device which does not need a fresh electrode to be added thereto, has excellent convergence and shows little change of a discharged electric current for short and long periods of time, and an image display apparatus using the device. The electron-emitting device includes at least a pair of device electrodes formed on an insulating substrate, and a plurality of electroconductive films which are formed so as to connect the device electrodes to each other and have gaps therein, wherein the surface of a region which is at least adjacent to the gap between the electroconductive films and is not covered with the electroconductive film is higher than the surface of the electroconductive film.

摘要翻译： 本发明提供一种不需要添加新鲜电极的电子发射器件，具有良好的会聚性，并且短时间和长时间内放电电流几乎没有变化，以及使用该器件的图像显示装置。 电子发射器件至少包括一对形成在绝缘衬底上的器件电极，以及多个导电膜，其形成为将器件电极彼此连接并且在其中具有间隙，其中， 至少与导电膜之间的间隙相邻并且不被导电膜覆盖的高于导电膜的表面。

公开(公告)号：US07572164B2

公开(公告)日：2009-08-11

申请号：US11150189

申请日：2005-06-13

申请人： Toshihiko Takeda ,  Koki Nukanobu ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Koki Nukanobu ,  Takuto Moriguchi

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J9/027

摘要： A method for manufacturing a precursor to an electron-emitting device includes the steps of preparing an electron-emitting member, and alternately exposing the electron-emitting member to an oxygen-containing gas and a metal-containing gas.

摘要翻译： 用于制造电子发射器件的前体的方法包括制备电子发射部件，并将电子发射部件交替暴露于含氧气体和含金属气体的步骤。

公开(公告)号：US20050282458A1

公开(公告)日：2005-12-22

申请号：US11150189

申请日：2005-06-13

申请人： Toshihiko Takeda ,  Koki Nukanobu ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Koki Nukanobu ,  Takuto Moriguchi

IPC分类号： H01J9/02 ,  H01J9/12 ,  H01J9/14

CPC分类号： H01J9/027

摘要： A method for manufacturing a precursor to an electron-emitting device includes the steps of preparing an electron-emitting member, and alternately exposing the electron-emitting member to an oxygen-containing gas and a metal-containing gas.

摘要翻译： 用于制造电子发射器件的前体的方法包括制备电子发射部件，并将电子发射部件交替暴露于含氧气体和含金属气体的步骤。

公开(公告)号：US5593335A

公开(公告)日：1997-01-14

申请号：US223528

申请日：1994-04-05

申请人： Hidetoshi Suzuki ,  Yoshiyuki Osada ,  Ichiro Nomura ,  Takeo Ono ,  Hisaaki Kawade ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Yasuhiro Hamamoto ,  Tatsuya Iwasaki ,  Aoji Isono ,  Noritake Suzuki ,  Yasuyuki Todokoro ,  Masahiro Okuda ,  Katsuhiko Shinjo

发明人： Hidetoshi Suzuki ,  Yoshiyuki Osada ,  Ichiro Nomura ,  Takeo Ono ,  Hisaaki Kawade ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Yasuhiro Hamamoto ,  Tatsuya Iwasaki ,  Aoji Isono ,  Noritake Suzuki ,  Yasuyuki Todokoro ,  Masahiro Okuda ,  Katsuhiko Shinjo

IPC分类号： G09G3/22 ,  H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

CPC分类号： H01J1/316 ,  G09G3/22 ,  H01J31/127 ,  H01J9/027 ,  G09G2300/0885 ,  G09G2310/06 ,  H01J2201/3165 ,  H01J2201/319 ,  H01J2329/00

摘要： A method of manufacturing an electron source having a plurality of surface-conduction electron-emitting devices arranged on a substrate in row and column directions includes the forming of electron emission portions of the plurality of surface-conduction electron-emitting devices. The forming is carried out by supplying current through the plurality of surface-conduction electron-emitting devices upon dividing them into a plurality of groups. An image forming apparatus passes a current through a plurality of electron sources, which are formed on a substrate and arrayed in the form of a matrix, in dependence upon an image signal, and an image is formed by a light emission in response to electrons emitted from the plurality of electron sources.

摘要翻译： 制造具有沿行和列方向布置在基板上的多个表面传导电子发射器件的电子源的方法包括形成多个表面传导电子发射器件的电子发射部分。 通过在通过多个表面传导电子发射器件将电流分成多个组时供给电流来进行形成。 图像形成装置根据图像信号使电流通过形成在基板上并以矩阵的形式排列的多个电子源，并且通过响应于发射的电子的发光形成图像 从多个电子源。

公开(公告)号：US20100060141A1

公开(公告)日：2010-03-11

申请号：US12553727

申请日：2009-09-03

申请人： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

发明人： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

IPC分类号： H01J1/62 ,  H01J1/02

CPC分类号： H01J1/316 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/3165 ,  H01J2329/0423 ,  H01J2329/0489

摘要： In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion 30 positioned astride the outer surface of the insulating member and the inner surface of the recess portion formed in the insulating member, and the gate including a layered structure of at least two electroconductive layers. A thermal expansion coefficient of the electroconductive layer which is arranged at a part facing to the protrusion is larger than that of the other electroconductive layer.

摘要翻译： 在使用电子发射器件的电子束器件中，其中设置有栅极和阴极以夹着形成在绝缘构件上的凹陷区域，电子在撞击栅极之后被散射，然后被抽出，使得可以容易地 获得稳定的电子发射特性，并且即使当产生过多的热量时也防止电子发射器件由于过热而劣化或断裂。 电子发射器件包括阴极，其具有跨过绝缘构件的外表面的突起30和形成在绝缘构件中的凹部的内表面，并且栅极包括至少两个导电层的层叠结构。 布置在面向突起的部分处的导电层的热膨胀系数大于另一导电层的热膨胀系数。