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    Method for producing semiconductor device and semiconductor device
    4.
    发明授权
    Method for producing semiconductor device and semiconductor device 失效
    半导体器件和半导体器件的制造方法

    公开(公告)号：US08426322B2

    公开(公告)日：2013-04-23

    申请号：US13029866

    申请日：2011-02-17

    申请人： Hironori Yamamoto ,  Jun Kawahara ,  Tomonori Sakaguchi ,  Yoshihiro Hayashi

    发明人： Hironori Yamamoto ,  Jun Kawahara ,  Tomonori Sakaguchi ,  Yoshihiro Hayashi

    IPC分类号： H01L21/312

    CPC分类号： H01L21/02274 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/76807 ,  H01L21/7682 ,  H01L2221/1047

    摘要： In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas.

    摘要翻译： 在半导体装置的制造方法中，将具有环状SiO结构作为主骨架且具有不同结构的两种以上的有机硅氧烷化合物混合，然后蒸发。 或者，将这两种或更多种有机硅氧烷化合物材料同时混合并蒸发以产生汽化气体。 然后，蒸发的气体与载气一起输送到反应炉。 然后，在反应炉中，通过等离子体CVD法或使用汽化气体的等离子体聚合法形成多孔绝缘层。

    Method of manufacturing a semiconductor device
    7.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08367559B2

    公开(公告)日：2013-02-05

    申请号：US13013554

    申请日：2011-01-25

    申请人： Hironori Yamamoto ,  Yoshihiro Hayashi

    发明人： Hironori Yamamoto ,  Yoshihiro Hayashi

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02274 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76883

    摘要： Characteristics of a low-k insulating film grown on a substrate is modulated in the thickness-wise direction, by varying the ratio of high-frequency input and low-frequency input used for inducing plasma in the course of forming the film, to thereby improve the adhesion strength while keeping the dielectric constant at a low level, wherein the high-frequency input and the low-frequency input for inducing plasma are applied from a single electrode, while elevating the level of low-frequency input at least either at the start of formation or at the end of formation of the insulating film, as compared with the input level in residual time zone.

    摘要翻译： 通过改变在形成膜的过程中用于诱导等离子体的高频输入和低频输入的比例，在厚度方向上调制在衬底上生长的低k绝缘膜的特性，从而改善 粘合强度同时保持介电常数在低水平，其中用于诱导等离子体的高频输入和低频输入从单个电极施加，同时在开始时至少提高低频输入的电平 的形成或绝缘膜形成结束时，与残留时区的输入电平相比较。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08278763B2

    公开(公告)日：2012-10-02

    申请号：US13238796

    申请日：2011-09-21

    申请人： Munehiro Tada ,  Hiroto Ohtake ,  Fuminori Ito ,  Yoshihiro Hayashi ,  Hironori Yamamoto

    发明人： Munehiro Tada ,  Hiroto Ohtake ,  Fuminori Ito ,  Yoshihiro Hayashi ,  Hironori Yamamoto

    IPC分类号： H01L23/48 ,  H01L23/52

    CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.

    摘要翻译： 本发明提供了一种多层布线技术，其中在布线之间保持有效的低电容的同时获得了布线之间的高粘合性和高绝缘可靠性。 半导体器件的特征在于，第一绝缘膜是由至少一层包含含有硅，氧和碳的硅氧烷结构的层形成的绝缘膜; 第一绝缘膜的内部的硅氧烷结构含有比硅原子数多的碳原子数; 并且在第一绝缘膜和金属之间的界面中的至少一个上形成有含有比第一绝缘膜的内部少的碳原子数和更多数量的单位体积的氧原子的改性层， 第一绝缘膜和第二绝缘膜之间的界面。