INKJET PRINTER
    1.
    发明申请
    INKJET PRINTER 有权
    喷墨打印机

    公开(公告)号:US20100194816A1

    公开(公告)日:2010-08-05

    申请号:US12757042

    申请日:2010-04-09

    IPC分类号: B41J29/38

    CPC分类号: B41J2/2107 B41J11/002

    摘要: An inkjet printer includes a printing head configured to eject solvent ink from nozzles of the printing head on a medium at a printing position. A medium is made of a polyvinyl chloride film. The solvent ink includes an organic pigment of from 3 to 7 weight %, a resin of 15 weight % or less, and solvents. A print heater is configured to heat the medium at the printing position. The print heater is arranged separately from a pre-heater. A temperature controller is configured to control a pre-heater heating temperature of the pre-heater and a print heater heating temperature of the print heater such that a surface temperature of the medium at the printing position becomes within a range of from 30° C. to 70° C.

    摘要翻译: 喷墨打印机包括:打印头,被配置为在打印位置的介质上从打印头的喷嘴喷射溶剂油墨。 介质由聚氯乙烯膜制成。 溶剂油墨包含3〜7重量%的有机颜料,15重量%以下的树脂和溶剂。 打印加热器构造成在打印位置加热介质。 打印加热器与预热器分开布置。 温度控制器被配置为控制预热器的预热器加热温度和打印加热器的打印加热器加热温度,使得打印位置处的介质的表面温度变为30℃的范围。 至70℃

    Inkjet printing system
    2.
    发明授权
    Inkjet printing system 有权
    喷墨打印系统

    公开(公告)号:US08444262B2

    公开(公告)日:2013-05-21

    申请号:US13425418

    申请日:2012-03-21

    IPC分类号: B41J2/01 B41J29/38

    CPC分类号: B41J2/2107 B41J11/002

    摘要: An inkjet printer includes a platen, a printing head, a feeding device, a pre-heater and a print heater. The printing head is configured to move in a right-left direction above the platen and to eject solvent ink from nozzles of the printing head on a printing surface of a medium at a printing position. The feeding device is configured to feed the medium on the platen in a forward direction substantially perpendicular to the right-left direction. The temperature controller is configured to control a pre-heater heating temperature of the pre-heater and a print heater heating temperature of the print heater such that a surface temperature of the printing surface of the medium at the printing position becomes within a range of from 30° C. to 70° C.

    摘要翻译: 喷墨打印机包括压板,打印头,进给装置,预热器和打印加热器。 打印头构造成在压板上方的左右方向上移动,并且在打印位置的介质的打印表面上从打印头的喷嘴喷射溶剂墨。 进给装置构造成沿着与左右方向大致垂直的向前方向将介质供给到压板上。 温度控制器被配置为控制预热器的预热器加热温度和打印加热器的打印加热器加热温度,使得打印位置处的介质的打印表面的表面温度变为 30°C至70°C

    Inkjet printer
    3.
    发明授权
    Inkjet printer 有权
    喷墨打印机

    公开(公告)号:US08162470B2

    公开(公告)日:2012-04-24

    申请号:US12757042

    申请日:2010-04-09

    IPC分类号: B41J2/01 B41J29/38

    CPC分类号: B41J2/2107 B41J11/002

    摘要: An inkjet printer includes a printing head configured to eject solvent ink from nozzles of the printing head on a medium at a printing position. A medium is made of a polyvinyl chloride film. The solvent ink includes an organic pigment of from 3 to 7 weight %, a resin of 15 weight % or less, and solvents. A print heater is configured to heat the medium at the printing position. The print heater is arranged separately from a pre-heater. A temperature controller is configured to control a pre-heater heating temperature of the pre-heater and a print heater heating temperature of the print heater such that a surface temperature of the medium at the printing position becomes within a range of from 30° C. to 70° C.

    摘要翻译: 喷墨打印机包括:打印头,被配置为在打印位置的介质上从打印头的喷嘴喷射溶剂油墨。 介质由聚氯乙烯膜制成。 溶剂油墨包含3〜7重量%的有机颜料,15重量%以下的树脂和溶剂。 打印加热器构造成在打印位置加热介质。 打印加热器与预热器分开布置。 温度控制器被配置为控制预热器的预热器加热温度和打印加热器的打印加热器加热温度,使得打印位置处的介质的表面温度变为30℃的范围。 至70℃

    Inkjet printer
    4.
    发明申请
    Inkjet printer 审中-公开
    喷墨打印机

    公开(公告)号:US20050151815A1

    公开(公告)日:2005-07-14

    申请号:US10510859

    申请日:2003-04-18

    CPC分类号: B41J2/2107 B41J11/002

    摘要: An inkjet printer capable of printing pictorial diagrams and characters clearly without smearing using a solvent ink. A preheater for preliminarily heating the medium forwardly carried toward below the traveling path of the printing head on a rear part of the platen and a print heater for heating the medium that has been carried onto the platen, on which the inkjet droplets ejected from the nozzles of the printing head are landed, are provided. Further, the ink droplets ejected from the nozzles of the printing head and landed on the surface of the medium are prevented from permeating the medium in the surrounding parts of landed points by heating and drying the ink droplets early on the surface part of the medium.

    摘要翻译: 一种喷墨打印机,能够清晰地印刷图形和字符,而无需使用溶剂油墨进行涂抹。 预热器,其用于预先加热在压板的后部向打印头的行进路径向下运送的介质;以及打印加热器,用于加热已经承载在压板上的介质,喷嘴从喷嘴喷出 的打印头都着陆,被提供。 此外,通过在介质的表面部分上早期加热和干燥墨滴,防止从打印头的喷嘴喷射并降落在介质表面上的墨滴渗透到着陆点周围的介质中。

    Method for manufacturing semiconductor device
    6.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08716144B2

    公开(公告)日:2014-05-06

    申请号:US13512372

    申请日:2010-11-17

    IPC分类号: H01L21/302

    CPC分类号: H01L21/3065

    摘要: A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.

    摘要翻译: 通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括:将蚀刻室内的基板定位的定位步骤,所述基板具有包括形成在其上的开口部的光致抗蚀剂膜, 第一蚀刻步骤,通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模,在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤,通过执行在基板中形成孔 在第一蚀刻步骤之后通过使用至少包括SF 6,O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

    Process for producing metal composite material
    7.
    发明申请
    Process for producing metal composite material 审中-公开
    金属复合材料生产工艺

    公开(公告)号:US20120056360A1

    公开(公告)日:2012-03-08

    申请号:US13199747

    申请日:2011-09-08

    IPC分类号: C04B35/10

    摘要: Producing a metal composite material by mixing hydrated ceramic particles, having water of crystallization that is bound within fine pores which have an average pore diameter of 1 nm or more and 80 nm or less, with a reinforcing material, the resulting mixture being sintered to form a preform which is then impregnated with a melt of an aluminum alloy and subjected to surface polishing. The ceramic particles, from which water of crystallization has been removed while the average pore diameter of the pores thereof is maintained, are dispersed uniformly, it is possible to obtain the metal composite material in which the ceramic particles that have fine pores are exposed on surfaces evenly in a stable manner by surface polishing that is conducted after the melt impregnation. The metal composite material can permit infiltration of a lubricating oil into the fine pores.

    摘要翻译: 通过将具有结晶的水结合的水合陶瓷颗粒与平均孔径为1nm以上且80nm以下的细孔混合,形成金属复合材料,所得到的混合物被烧结而形成 预制件,然后用铝合金熔体浸渍并进行表面抛光。 在保持结晶孔的平均孔径的同时除去了结晶水的陶瓷颗粒被均匀地分散,可以获得具有细孔的陶瓷颗粒暴露在表面上的金属复合材料 通过在熔融浸渍之后进行的表面抛光以均匀的方式均匀。 金属复合材料可以允许润滑油渗透到细孔中。

    Semiconductor device and method of manufacturing the same
    8.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07470998B2

    公开(公告)日:2008-12-30

    申请号:US11373154

    申请日:2006-03-13

    IPC分类号: H01L23/84 H01L23/52 H01L29/40

    摘要: The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

    摘要翻译: 本发明涉及一种半导体器件,其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接, 其制造方法。 根据本发明的半导体器件包括:第一衬底,包括前表面和后表面;第一器件,具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构,所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

    Plasma processing apparatus and plasma processing method
    10.
    发明申请
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号:US20050172904A1

    公开(公告)日:2005-08-11

    申请号:US10675966

    申请日:2003-10-02

    摘要: An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

    摘要翻译: 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上,并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一第三温度传感器142,144和146检测。控制器140控制供应给晶片中心之间的空间的He的压力水平 W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116到晶片W的外边缘和静电卡盘108之间的空间以及由外部环体内的加热器148产生的热量 112b基于如此检测的温度的信息,使得晶片W和内环体112a的温度大致相等。