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公开(公告)号：US06676804B1
公开(公告)日：2004-01-13
申请号：US09720910
申请日：2001-01-02
IPC分类号： H05H100
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内的下电极106上，并且导电内环体112a和绝缘外环体112b包围安装在卡盘上的晶片W的外边缘 表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给晶片W的中心之间的空间的He的压力水平 以及静电卡盘108经由第一气体出口管道114以及经由第二气体出口管道116和晶片W的外边缘与静电卡盘108之间的空间以及外环体112b内的加热器148产生的热量 基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。
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公开(公告)号：US20050172904A1
公开(公告)日：2005-08-11
申请号：US10675966
申请日：2003-10-02
IPC分类号： H05H1/46 , C23C16/00 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683 , H05H1/00
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一第三温度传感器142,144和146检测。控制器140控制供应给晶片中心之间的空间的He的压力水平 W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116到晶片W的外边缘和静电卡盘108之间的空间以及由外部环体内的加热器148产生的热量 112b基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。
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公开(公告)号：US07335278B2
公开(公告)日：2008-02-26
申请号：US10675966
申请日：2003-10-02
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给第一至第三温度传感器142,144和146的中心之间的空间的He的压力水平 晶片W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116与晶片W的外边缘和静电卡盘108之间的空间以及由外部环内的加热器148产生的热量 基于关于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。
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4.发明授权Plasma processing method, plasma processing apparatus, and plasma generating apparatus 失效等离子体处理方法，等离子体处理装置和等离子体生成装置
公开(公告)号：US5783492A
公开(公告)日：1998-07-21
申请号：US399939
申请日：1995-03-03
IPC分类号： C23C16/02 , C23C16/507 , C23C16/54 , H01L21/00 , H01H1/00
CPC分类号： H01L21/67069 , C23C16/0245 , C23C16/507 , C23C16/54
摘要： A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.
摘要翻译： 公开了一种等离子体处理方法，其对配置在处理容器中的目标物体进行等离子体处理，例如等离子体成膜处理。 该方法包括将惰性气体引入处理容器的第一步骤，在处理容器中产生惰性气体等离子体的第二步骤，将处理对象物的处理气体引入处理容器的第三步骤， 以及在处理容器中产生处理气体的等离子体以处理目标物体的第四步骤。
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公开(公告)号：US5980767A
公开(公告)日：1999-11-09
申请号：US899864
申请日：1997-07-24
IPC分类号： G01N21/68 , H01L21/302
CPC分类号： G01N21/68 , B81C1/00587 , B81C99/0065 , H01J37/32963 , H01J37/3299 , B81C2201/0142
摘要： Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C.sub.2 in the plasma, by optical detecting means, and determining the end point of the plasma process from the emission intensity of the emission spectrum detected by the optical detector. The apparatus has a process chamber, a pair of electrodes, a light-collecting device, an optical detector, and a determining device. The chamber has a monitor window. The electrodes are located in the process chamber. The first electrode is used to support the object. A high-frequency power is supplied between the electrodes to change a process gas into plasma. The light-collecting device collects the light from the plasma through the monitor window. The optical detector detects an emission spectrum from the light collected. The determining device determines the end point of the plasma process from the emission intensity of the emission spectrum detected. The monitor window is secured to the distal end of a cylindrical member protruding from the chamber. The member has a narrow gas passage for trapping a gas generated by the plasma process.
摘要翻译： 本文公开了一种检测对物体进行的等离子体处理的终点的方法和等离子体处理装置。 该方法包括以下步骤：通过光学检测装置检测等离子体中C2特有的波长区域上的发射光谱，并根据由光学检测器检测到的发射光谱的发射强度来确定等离子体处理的终点。 该装置具有处理室，一对电极，光收集装置，光学检测器和确定装置。 该房间有一个监视器窗口。 电极位于处理室中。 第一个电极用于支撑物体。 在电极之间提供高频电力以将处理气体改变为等离子体。 集光装置通过监视窗收集来自等离子体的光。 光学检测器从所收集的光线检测发射光谱。 确定装置根据检测到的发射光谱的发射强度确定等离子体处理的终点。 监视器窗口固定到从腔室突出的圆柱形构件的远端。 该构件具有用于捕获由等离子体工艺产生的气体的窄气体通道。
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公开(公告)号：US07541283B2
公开(公告)日：2009-06-02
申请号：US11066260
申请日：2005-02-28
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/44
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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公开(公告)号：US20100112819A1
公开(公告)日：2010-05-06
申请号：US12686899
申请日：2010-01-13
申请人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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公开(公告)号：US20050274321A1
公开(公告)日：2005-12-15
申请号：US11147434
申请日：2005-06-08
申请人： Tomoaki Ukei , Kimihiro Higuchi , Tatsuo Matsudo , Kazuki Denpoh
发明人： Tomoaki Ukei , Kimihiro Higuchi , Tatsuo Matsudo , Kazuki Denpoh
IPC分类号： C23C16/00 , C23C16/458 , C23C16/52 , H01L21/00
CPC分类号： C23C16/52 , C23C16/4585 , C23C16/463 , H01L21/67248
摘要： A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.
摘要翻译： 一种等离子体处理装置，用于通过处理室中的高频功率将处理气体转换成等离子体，并且对安装在安装台上的基板进行等离子体处理包括设置成围绕安装台上的基板的环形部分，以及 温度控制单元，用于建立环部和基板之间的温度差，使得环部比基板高至少50℃。 此外，处理气体产生氯自由基，温度控制单元是用于加热环形部分的加热单元和用于冷却安装台的冷却单元中的至少一个。
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公开(公告)号：US20120006492A1
公开(公告)日：2012-01-12
申请号：US13242851
申请日：2011-09-23
申请人： Akihiro KIKUCHI , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro KIKUCHI , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
IPC分类号： C23F1/08
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。
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公开(公告)号：US07713431B2
公开(公告)日：2010-05-11
申请号：US11147434
申请日：2005-06-08
申请人： Tomoaki Ukei , Kimihiro Higuchi , Tatsuo Matsudo , Kazuki Denpoh
发明人： Tomoaki Ukei , Kimihiro Higuchi , Tatsuo Matsudo , Kazuki Denpoh
IPC分类号： H01L21/00
CPC分类号： C23C16/52 , C23C16/4585 , C23C16/463 , H01L21/67248
摘要： A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.
摘要翻译： 一种等离子体处理装置，用于通过处理室中的高频功率将处理气体转换成等离子体，并且对安装在安装台上的基板进行等离子体处理包括设置成围绕安装台上的基板的环形部分，以及 温度控制单元，用于建立环部和基板之间的温度差，使得环部比基板高至少50℃。 此外，处理气体产生氯自由基，温度控制单元是用于加热环形部分的加热单元和用于冷却安装台的冷却单元中的至少一个。
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