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    Semiconductor device and method of manufacturing the same
    1.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07470998B2

    公开(公告)日：2008-12-30

    申请号：US11373154

    申请日：2006-03-13

    申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    IPC分类号： H01L23/84 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

    摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

    Semiconductor device and method of manufacturing the same
    2.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20050087853A1

    公开(公告)日：2005-04-28

    申请号：US10855889

    申请日：2004-05-28

    申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/12 ,  H01L23/48 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L23/02 ,  H05K7/02

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

    摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

    Semiconductor device and method of manufacturing the same
    3.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07084005B2

    公开(公告)日：2006-08-01

    申请号：US10855889

    申请日：2004-05-28

    申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention includes a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

    摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，其包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

    Semiconductor device and method of manufacturing the same
    4.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20060154473A1

    公开(公告)日：2006-07-13

    申请号：US11373154

    申请日：2006-03-13

    申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuyu Nagaseki ,  Akiteru Rai

    发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuyu Nagaseki ,  Akiteru Rai

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

    摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

    Method of making a hybrid semiconductor device
    5.
    发明授权
    Method of making a hybrid semiconductor device 失效
    制造混合半导体器件的方法

    公开(公告)号：US4818728A

    公开(公告)日：1989-04-04

    申请号：US128437

    申请日：1987-12-03

    申请人： Akiteru Rai ,  Keiji Yamamura ,  Takashi Nukii

    发明人： Akiteru Rai ,  Keiji Yamamura ,  Takashi Nukii

    IPC分类号： H01L25/18 ,  H01L21/98 ,  H01L23/485 ,  H01L25/065 ,  H01L25/07 ,  H01L27/00 ,  H01L21/60 ,  H01L21/58

    CPC分类号： H01L24/10 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13 ,  H01L2224/13021 ,  H01L2224/13099 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/73104 ,  H01L2225/06513 ,  H01L2225/06593 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/49126 ,  Y10T29/53174

    摘要： A method for making a semiconductor device of a type comprising at least first and second semiconductor circuit units, which method comprises the step of forming a plurality of connecting electrodes on an upper surface of each of at least first and second semiconductor substrates; forming an electrically insulating layer entirely over the upper surface of each of the first and second substrates so as to cover the respective connecting electrodes; partially removing the insulating layer on each of the first and second substrates to permit the respective electrodes to be exposed to the outside; forming metal studs on the first substrate in contact with the electrodes so as to protrude outwardly of the respective insulating layer to complete the first semiconductor unit and forming solder deposits on the second substrate in contact with the respective electrodes on such second substrate to complete the second semiconductor unit; combining the first and second semiconductor units with the metal studs in the first semiconductor unit aligned respectively with the solder deposits in the second semiconductor unit; and heating the resultant assembly to allow the solder deposits to be melted with the associated metal studs consequently immersed into the melted solder deposits thereby to accomplish a firm interlock between the electrodes on the first and second substrates.

    摘要翻译： 一种用于制造至少包括第一和第二半导体电路单元的类型的半导体器件的方法，所述方法包括在至少第一和第二半导体衬底中的每一个的上表面上形成多个连接电极的步骤; 在所述第一和第二基板中的每一个的上表面上整体形成电绝缘层，以便覆盖相应的连接电极; 部分地去除第一和第二基板中的每一个上的绝缘层，以允许各个电极暴露于外部; 在所述第一基板上形成与所述电极接触的金属螺柱，以便从所述绝缘层向外突出以完成所述第一半导体单元并且在所述第二基板上形成与所述第二基板上的相应电极接触的焊料沉积物，以完成所述第二半导体单元 半导体单元; 将第一和第二半导体单元与分别与第二半导体单元中的焊料沉积物对准的第一半导体单元中的金属柱头组合; 并加热所得到的组件以允许焊料沉积物与相关联的金属螺柱熔化，从而浸入熔融的焊料沉积物中，从而在第一和第二基板上的电极之间实现牢固的互锁。