摘要:
A magnetic single component toner for electrostatic latent image development, which is used in a magnetic single component toner projection development method using an a-Si photosensitive member having a film thickness of no more than 30 μm, and a cleaning blade as a cleaning means for removing toner from the surface of this photosensitive member, so as to develop an electrostatic latent image formed on the photosensitive member, with a developing agent bearing member, comprises strontium titanate which has been rendered hydrophobic and has a specific surface area of 8.0 to 30 m2/g, and which is added as an external additive at a ratio of 0.3 to 5.0 parts by mass with respect to 100 parts by mass of the toner particle.
摘要:
Disclosed is a magnetic one-component toner for development of an electrostatic latent image used in a magnetic one-component jumping development system in which a photoconductor is an a-Si photoconductor having a thickness of 30 μm or less and Rz of a developer carrier is from 2.0 to 6.0 μm. A cleaning means for removing the toner from the surface of the photoconductor is a cleaning blade. Titanium oxide, as an external additive, is added to the toner. The titanium oxide has a liberation rate within a range from 10 to 22% and contains a low resistance titanium oxide having a volume resistivity within a range from 100 to 107Ω·cm and a high resistance titanium oxide having a volume resistivity within a range from 108 to 1013Ω·cm, a mass ratio of the low resistance titanium oxide to the high resistance titanium oxide within a range from 1.3:1 to 4:1.
摘要:
Disclosed is a toner for a developer comprising cylindrical toner particles formed of a toner composition containing at least a binder resin and a releasant as toner components, and an external additive, wherein the cylindrical toner particles have an average circularity of 0.880 or more and 0.930 or less.
摘要:
[Object] An object of the invention is to provide a toner that can both achieve a higher level of low temperature fixability and suppression of the toner scattering. [Means of Achieving the Object] The disclosure is to provide a toner, including base-particles, and an external-additive, wherein a glass-transition temperature obtained from a DSC-curve at a second-warming of a THF-insoluble component is −50° C. or higher and 10° C. or lower, wherein an average circularity of the toner is 0.975 or more and 0.985 or lower, wherein the toner satisfies the following formula: 1.5≤Bt−0.025−Ct≤3.0, wherein the Bt [m2/g] is a BET-specific-surface area of the toner-particles, and the Ct [%] is a coverage by the external-additive, and, at least a portion of a surface of the external-additive is coated with either an oxide of a metallic element, a hydroxide of the metallic element, or both.
摘要:
A toner is provided. The toner contains a polyester resin. The toner has a glass transition temperature (Tg1st) at first temperature rising of differential scanning calorimetry (DSC) of from 45° C. to 65° C. The toner includes a component insoluble in tetrahydrofuran (THF) having two glass transition temperatures (Tga1st and Tgb1st) at the first temperature rising of DSC, where Tga1st is in a range of −45° C. to 5° C. and Tgb1st is in a range of 45° C. to 70° C. The toner includes a component soluble in THF having a glass transition temperature (Tg2nd) at second temperature rising of DSC of from 40° C. to 65° C.
摘要:
A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要:
A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.
摘要:
A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要:
A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.
摘要:
According to one embodiment, a semiconductor chip mounting body, with an enhanced shock-resistance at portions of the bonding member corresponding to the corners of a semiconductor chip, is provided. The semiconductor chip mounting body includes a circuit board having a circuit pattern formed on a mounting surface thereof, a semiconductor chip mounted on the circuit pattern of the circuit board, and a bonding member arranged at least between the circuit board and the semiconductor chip, and on the sides of the semiconductor chip to fix the semiconductor chip on the circuit board. The bonding member contains thermosetting resin and magnetic powder dispersed in the thermosetting resin. The magnetic powder is locally disposed in portions of the bonding member which is located the corners of the semiconductor chip.