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    Method for making soft magnetic film
    7.
    发明授权
    Method for making soft magnetic film 失效
    制造软磁膜的方法

    公开(公告)号：US5403457A

    公开(公告)日：1995-04-04

    申请号：US111055

    申请日：1993-08-24

    申请人： Kumio Nago ,  Isamu Aokura ,  Hitoshi Yamanishi ,  Koichi Osano ,  Hiroshi Sakakima ,  Toshiyuki Suemitsu

    发明人： Kumio Nago ,  Isamu Aokura ,  Hitoshi Yamanishi ,  Koichi Osano ,  Hiroshi Sakakima ,  Toshiyuki Suemitsu

    IPC分类号： G11B5/147 ,  H01F41/18 ,  H01F41/30 ,  C23C14/35 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/147 ,  H01F41/18 ,  H01F41/302 ,  Y10T29/49034

    摘要： The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.

    摘要翻译： 本发明的方法通过使用具有溅射电极的溅射装置，提供了一种具有高饱和磁通密度和高磁导率的各向异性的软磁性膜，其适用于各种类型的磁头，以高产率生产， 其具有主要以Fe或Co布置在目标1上方的永磁体，使得由所述永磁体产生的磁力线3平行于所述目标1的表面和所述目标1的中心线并且具有 相对于所述中心线对称的磁强度图案，而所述中心线右侧的磁力线与所述中心线左侧的磁力线相反。

    Magnetic head and method of manufacturing the same
    8.
    发明授权
    Magnetic head and method of manufacturing the same 失效

    公开(公告)号：US5084795A

    公开(公告)日：1992-01-28

    申请号：US475209

    申请日：1990-02-05

    申请人： Hiroshi Sakakima ,  Keita Ihara ,  Koichi Osano

    发明人： Hiroshi Sakakima ,  Keita Ihara ,  Koichi Osano

    IPC分类号： G11B5/187

    CPC分类号： G11B5/1878

    摘要： A metal-in-gap type magnetic head having a small undulation of reproduction output caused by a pseudo-gap and method of manufacture thereof are provided, wherein the magnetic head employs as a back core a ferrite (particularly, a ferrite containing Sn) and employs in a metal portion which constitutes a front core an alloy film (particularly, a composition transition alloy film) having a composition expressed by T-M-X-N, where T is at least one metal element selected from a group consisting of Fe, Co and Ni, M is at least one metal element selected from a group consisting of Nb, Zr, Ti, Ta, Hf, Cr, Mo, W and Mn, X is at least one metalloid element selected from a group consisting of B, Si and Ge, and N is nitrogen.

    Thin film memory device having a variable resistance
    9.
    发明申请
    Thin film memory device having a variable resistance 有权
    具有可变电阻的薄膜存储器件

    公开(公告)号：US20070196696A1

    公开(公告)日：2007-08-23

    申请号：US11578521

    申请日：2004-10-22

    申请人： Koichi Osano ,  Shunsaku Muraoka ,  Hiroshi Sakakima

    发明人： Koichi Osano ,  Shunsaku Muraoka ,  Hiroshi Sakakima

    IPC分类号： G11B5/33

    CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/78 ,  G11C2213/79 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  Y10T428/1136 ,  Y10T428/115

    摘要： A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.

    摘要翻译： 薄膜存储装置包括第一电极（3），第一可变电阻薄膜（2）和第二电极（1）。 第一电极（3）形成在衬底（4）的表面上。 第一可变电阻薄膜（2）形成在第一电极（3）的表面上。 第二电极（1）形成在第一可变电阻薄膜（2）的表面上。 第一可变电阻薄膜（2）包括其体积电阻根据晶格应变和电荷顺序的变化中的至少一个而变化的材料。