公开(公告)号：US07408225B2

公开(公告)日：2008-08-05

申请号：US10960600

申请日：2004-10-07

申请人： Hiroshi Shinriki ,  Baiei Kawano ,  Akira Shimizu

发明人： Hiroshi Shinriki ,  Baiei Kawano ,  Akira Shimizu

IPC分类号： H01L23/62

CPC分类号： C23C16/34 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

摘要： A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.

摘要翻译： 薄膜形成装置具有要抽真空的反应室，在反应室内放置基板的放置部分，安置在用于将气体供应到基板表面上的放置部分上的气体分散导向器， 用于将气体引入气体分散引导件的供给口，设置在气体分散引导件的基板侧并具有多个气体排出孔的气体分散板，用于排出气体的下游的第一排出口 分散板，从气体分散板供给到基板表面上的气体和用于在气体分散板上游排气的第二排气口，气体分散板内的气体经由气体分散板 导轨和气体分散板。

公开(公告)号：US20050208217A1

公开(公告)日：2005-09-22

申请号：US10960600

申请日：2004-10-07

申请人： Hiroshi Shinriki ,  Baiei Kawano ,  Akira Shimizu

发明人： Hiroshi Shinriki ,  Baiei Kawano ,  Akira Shimizu

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306

CPC分类号： C23C16/34 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

摘要： A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.

摘要翻译： 薄膜形成装置具有要抽真空的反应室，在反应室内放置基板的放置部分，安置在用于将气体供应到基板表面上的放置部分上的气体分散导向器， 用于将气体引入气体分散引导件的供给口，设置在气体分散引导件的基板侧并具有多个气体排出孔的气体分散板，用于排出气体的下游的第一排出口 分散板，从气体分散板供给到基板表面上的气体和用于在气体分散板上游排气的第二排气口，气体分散板内的气体经由气体分散板 导轨和气体分散板。

公开(公告)号：US07276123B2

公开(公告)日：2007-10-02

申请号：US10897061

申请日：2004-07-22

申请人： Akira Shimizu ,  Hideaki Fukuda ,  Hiroki Arai ,  Baiei Kawano ,  Takayuki Yamagishi

发明人： Akira Shimizu ,  Hideaki Fukuda ,  Hiroki Arai ,  Baiei Kawano ,  Takayuki Yamagishi

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/4585

摘要： A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.

摘要翻译： 半导体处理装置包括基座和可拆卸地放置在基座周边的可拆卸放置块，用于传送基板。 提供可伸缩的支撑构件用于将放置块从基座分离/附接到基座。

公开(公告)号：US06921556B2

公开(公告)日：2005-07-26

申请号：US10403179

申请日：2003-03-28

申请人： Akira Shimizu ,  Hideaki Fukuda ,  Baiei Kawano ,  Kazuo Sato

发明人： Akira Shimizu ,  Hideaki Fukuda ,  Baiei Kawano ,  Kazuo Sato

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/285 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/54

摘要： A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.

摘要翻译： 使用单晶片处理型CVD装置的成膜方法包括：（a）当基座升高时，密封基座的周边以将反应室与晶片处理室分离; 和（b）通过在膜沉积期间通过基座上的晶片的背侧和周边形成的至少一个排出孔，将气体从晶片处理室流入反应室。

公开(公告)号：US20050098111A1

公开(公告)日：2005-05-12

申请号：US11014437

申请日：2004-12-16

申请人： Akira Shimizu ,  Hideaki Fukuda ,  Baiei Kawano ,  Kazuo Sato

发明人： Akira Shimizu ,  Hideaki Fukuda ,  Baiei Kawano ,  Kazuo Sato

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/285 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/54

摘要： A single-wafer-processing type CVD apparatus includes: (a) a reaction chamber including: (i) a susceptor having at least one gas discharge hole to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber; (ii) a showerhead; (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along an inner wall of the reaction chamber; and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with the bottom of the exhaust duct; and (b) a temperature-controlling apparatus for regulating the temperature of the showerhead. The separation plate has a sealing portion to seal a periphery of the susceptor and to separate the reaction chamber from a wafer-handling chamber when the susceptor rises.

摘要翻译： 单晶加工型CVD装置包括：（a）反应室，包括：（i）基座，具有至少一个气体排出孔，用于将气体经由晶片的背面和周边流入反应室，进入 反应室; （ii）喷头; （iii）位于喷头附近并沿着反应室的内壁圆周设置的排气管道; 和（iv）与排气管道同轴设置的与排气管道的底部形成间隙的圆形分离板; 和（b）用于调节喷头温度的温度控制装置。 分离板具有密封部分，以密封基座的周边，并且当基座上升时将反应室与晶片处理室分开。

公开(公告)号：US20050022737A1

公开(公告)日：2005-02-03

申请号：US10897061

申请日：2004-07-22

申请人： Akira Shimizu ,  Hideaki Fukuda ,  Hiroki Arai ,  Baiei Kawano ,  Takayuki Yamagishi

发明人： Akira Shimizu ,  Hideaki Fukuda ,  Hiroki Arai ,  Baiei Kawano ,  Takayuki Yamagishi

IPC分类号： H01L21/683 ,  C23C16/00 ,  C23C16/458 ,  H01L21/205 ,  H01L21/677 ,  H01L21/68

CPC分类号： C23C16/4585

摘要： A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.

摘要翻译： 半导体处理装置包括基座和可拆卸地放置在基座周边的可拆卸放置块，用于传送基板。 提供可伸缩的支撑构件用于将放置块从基座分离/附接到基座。

公开(公告)号：US20070082132A1

公开(公告)日：2007-04-12

申请号：US11367177

申请日：2006-03-03

申请人： Hiroshi Shinriki ,  Akira Shimizu

发明人： Hiroshi Shinriki ,  Akira Shimizu

IPC分类号： C23C16/00

CPC分类号： C23C16/0245 ,  C23C16/18 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/02063 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76846 ,  H01L23/53238 ,  H01L23/53295 ,  H01L28/90

摘要： A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.

摘要翻译： 一种用于形成金属布线结构的方法包括：（i）在反应空间中提供包括暴露的布线层和暴露的绝缘层的多层结构; （ii）在还原气氛中至少在绝缘层的暴露表面上引入-NH 2或> NH末端; （iii）将还原性化合物引入反应空间，然后清洗反应空间; （iv）将金属卤化物引入到反应空间中，然后清洗反应空间; （v）引入含有N和H的气体，然后吹扫反应空间; （vi）依次重复步骤（iii）至（v）以产生含金属的阻挡层; 和（vii）在含金属的阻挡层上形成金属膜。

公开(公告)号：US20070082130A1

公开(公告)日：2007-04-12

申请号：US11245908

申请日：2005-10-07

申请人： Hiroshi Shinriki ,  Akira Shimizu

发明人： Hiroshi Shinriki ,  Akira Shimizu

IPC分类号： C23C16/00

CPC分类号： C23C16/0245 ,  C23C16/18 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/02063 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846

摘要： A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.

摘要翻译： 一种用于形成金属布线结构的方法包括：（i）在反应空间中提供包括暴露的布线层和暴露的绝缘层的多层结构; （ii）在还原气氛中至少在绝缘层的暴露表面上引入-NH 2或NH末端; （iii）将还原性化合物引入反应空间，然后清洗反应空间; （iv）将金属卤化物引入到反应空间中，然后清洗反应空间; （v）引入含有N和H的气体，然后吹扫反应空间; （vi）依次重复步骤（iii）至（v）以产生含金属的阻挡层; 和（vii）在含金属的阻挡层上形成金属膜。

公开(公告)号：US07785658B2

公开(公告)日：2010-08-31

申请号：US11367177

申请日：2006-03-03

申请人： Hiroshi Shinriki ,  Akira Shimizu

发明人： Hiroshi Shinriki ,  Akira Shimizu

IPC分类号： C23C16/06 ,  C23C16/30

CPC分类号： C23C16/0245 ,  C23C16/18 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/02063 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76846 ,  H01L23/53238 ,  H01L23/53295 ,  H01L28/90

摘要： A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.

摘要翻译： 一种用于形成金属布线结构的方法包括：（i）在反应空间中提供包括暴露的布线层和暴露的绝缘层的多层结构; （ii）在还原气氛中至少在绝缘层的暴露表面上引入-NH 2或> NH末端; （iii）将还原性化合物引入反应空间，然后清洗反应空间; （iv）将金属卤化物引入到反应空间中，然后清洗反应空间; （v）引入含有N和H的气体，然后吹扫反应空间; （vi）依次重复步骤（iii）至（v）以产生含金属的阻挡层; 和（vii）在含金属的阻挡层上形成金属膜。

公开(公告)号：US09109276B2

公开(公告)日：2015-08-18

申请号：US12885026

申请日：2010-09-17

申请人： Koichi Kanai ,  Kiyokazu Sugiyama ,  Eiji Shiotani ,  Kimio Nishimura ,  Junichi Uchiyama ,  Kiyohisa Suzuki ,  Jun Inomata ,  Daisuke Terada ,  Akira Shimizu ,  Hidenobu Matsuyama ,  Kiyoshi Hasegawa ,  Takashi Iiya

发明人： Koichi Kanai ,  Kiyokazu Sugiyama ,  Eiji Shiotani ,  Kimio Nishimura ,  Junichi Uchiyama ,  Kiyohisa Suzuki ,  Jun Inomata ,  Daisuke Terada ,  Akira Shimizu ,  Hidenobu Matsuyama ,  Kiyoshi Hasegawa ,  Takashi Iiya

IPC分类号： C23C4/18 ,  C23C4/12 ,  C23C4/16 ,  F02F1/00 ,  B05B7/22 ,  B05B13/06

CPC分类号： C23C4/124 ,  B05B7/224 ,  B05B13/0636 ,  C23C4/12 ,  C23C4/129 ,  C23C4/16 ,  C23C4/18 ,  F02F1/00 ,  F05C2253/12 ,  Y10T29/49272 ,  Y10T428/13

摘要： A cylindrical internal surface processing method comprises forming a cylinder bore, roughening an upper section of the bore, depositing coating onto the bore, and machining a lower section of the bore and the coating. The forming of the cylinder bore includes forming the upper and lower sections with the lower section being axially spaced from the upper section and having an axial length greater than zero. The roughening creates a roughened surface such that a radially innermost edge of the roughened surface has an internal diameter smaller than an internal diameter of the lower section. The coating is deposited to cover the upper section and at least a portion of the lower section. The machining forms a tapered portion and a cylindrical portion, a radially outermost edge of the cylindrical portion having an internal diameter larger than that of a radially outermost edge of the roughened surface.

摘要翻译： 圆柱形内表面处理方法包括形成气缸孔，使孔的上部部分粗糙化，在孔上沉积涂层，以及加工孔的下部和涂层。 缸孔的形成包括形成上部和下部，其中下部与上部轴向间隔开并具有大于零的轴向长度。 粗糙化产生粗糙表面，使得粗糙表面的径向最内边缘具有小于下部内径的内径。 沉积涂层以覆盖上部和下部的至少一部分。 加工形成锥形部分和圆柱形部分，圆柱形部分的径向最外边缘的内径大于粗糙表面的径向最外边缘的内径。