TANDEM TYPE SEMICONDUCTOR-PROCESSING APPARATUS
    3.
    发明申请
    TANDEM TYPE SEMICONDUCTOR-PROCESSING APPARATUS 审中-公开
    TANDEM型半导体加工设备

    公开(公告)号:US20090162170A1

    公开(公告)日:2009-06-25

    申请号:US11960252

    申请日:2007-12-19

    IPC分类号: H01L21/677

    CPC分类号: H01L21/67201 H01L21/67196

    摘要: A tandem type semiconductor-processing apparatus includes: a processing section including multiple units arranged in tandem, each of which unit includes a reaction chamber and a load lock chamber with an load lock interface; a FOUP section including at least one FOUP having a wafer cassette and a front opening interface; and a mini-environment section having a single interior connected to the processing section via each load lock interface on one side of the mini-environment section and connected to the FOUP section via each front opening interface on another side of the mini-environment section opposite to the one side.

    摘要翻译: 串联型半导体处理装置包括:处理部,包括串联布置的多个部件,每个部件包括反应室和具有负载锁定接口的负载锁定室; FOUP部分,其包括具有晶片盒和前开口界面的至少一个FOUP; 以及微型环境部分,其具有通过微环境部分一侧上的每个负载锁定接口连接到处理部分的单个内部,并且经由微型环境部分的另一侧上的每个前开口接口相对于FOUP部分相对 到一边

    Plasma treatment apparatus
    4.
    发明授权
    Plasma treatment apparatus 有权
    等离子体处理装置

    公开(公告)号:US07520244B2

    公开(公告)日:2009-04-21

    申请号:US10807528

    申请日:2004-03-23

    摘要: A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for transmitting radio-frequency power to one of the parallel-plate electrodes via multiple supply points provided on the one of the parallel-electrodes. The radio-frequency power supply system includes a radio-frequency transmission unit which includes an inlet transmission path and multiple branches branched off from the inlet transmission path multiple times. Each branch is connected to the supply point and has a substantially equal characteristic impedance value.

    摘要翻译: 用于薄膜沉积的等离子体处理装置包括反应室; 设置在所述室内的一对平行板电极; 以及用于经由设置在所述平行电极中的一个上的多个供给点将射频功率发送到平行板电极中的一个的射频电源系统。 射频电源系统包括射频传输单元,其包括入口传输路径和从入口传输路径多次分支的多个分支。 每个分支连接到供电点并且具有基本相等的特征阻抗值。

    High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
    5.
    发明授权
    High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules 有权
    配有多个双室模块的高通量半导体处理设备

    公开(公告)号:US09312155B2

    公开(公告)日:2016-04-12

    申请号:US13154271

    申请日:2011-06-06

    摘要: A wafer-processing apparatus includes: eight or ten reactors with identical capacity for processing wafers on the same plane, constituting four or five discrete units, each unit having two reactors arranged side by side with their fronts aligned in a line; a wafer-handling chamber including two wafer-handling robot arms each having at least two end-effectors; a load lock chamber; and a sequencer for performing, using the two wafer-handling robot arms, steps of unloading/loading processed/unprocessed wafers from/to any one of the units, and steps of unloading/loading processed/unprocessed wafers from/to all the other respective units in sequence while the wafers are in the one of the units.

    摘要翻译: 晶片处理装置包括:8个或10个具有相同容量的反应器,用于在相同的平面上处理晶片,构成四个或五个分立单元,每个单元具有并排排列的两个反应器,它们的前沿排成一行; 晶片处理室包括两个具有至少两个端部执行器的晶片处理机器人臂; 负载锁定室; 以及用于使用两个晶片处理机器人臂执行从/从任何一个单元卸载/加载处理/未处理的晶片的步骤的顺序器,以及从处理/未加工的晶片卸载/加载到所有其他相应的晶片的步骤 单元在晶片处于单元之一中的顺序。

    High-Throughput Semiconductor-Processing Apparatus Equipped with Multiple Dual-Chamber Modules
    6.
    发明申请
    High-Throughput Semiconductor-Processing Apparatus Equipped with Multiple Dual-Chamber Modules 有权
    配有多个双腔模块的高通量半导体处理装置

    公开(公告)号:US20120305196A1

    公开(公告)日:2012-12-06

    申请号:US13154271

    申请日:2011-06-06

    摘要: A wafer-processing apparatus includes: eight or ten reactors with identical capacity for processing wafers on the same plane, constituting four or five discrete units, each unit having two reactors arranged side by side with their fronts aligned in a line; a wafer-handling chamber including two wafer-handling robot arms each having at least two end-effectors; a load lock chamber; and a sequencer for performing, using the two wafer-handling robot arms, steps of unloading/loading processed/unprocessed wafers from/to any one of the units, and steps of unloading/loading processed/unprocessed wafers from/to all the other respective units in sequence while the wafers are in the one of the units.

    摘要翻译: 晶片处理装置包括:8个或10个具有相同容量的反应器,用于在相同的平面上处理晶片,构成四个或五个分立单元,每个单元具有并排排列的两个反应器,它们的前沿排成一行; 晶片处理室包括两个具有至少两个端部执行器的晶片处理机器人臂; 负载锁定室; 以及用于使用两个晶片处理机器人臂执行从/从任何一个单元卸载/加载处理/未处理的晶片的步骤的顺序器,以及从处理/未加工的晶片卸载/加载到所有其他相应的晶片的步骤 单元在晶片处于单元之一中的顺序。

    Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus
    7.
    发明申请
    Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus 有权
    具有缓冲机构和基板转印装置的基板处理装置

    公开(公告)号:US20080056854A1

    公开(公告)日:2008-03-06

    申请号:US11512637

    申请日:2006-08-30

    IPC分类号: H01L21/677

    摘要: A substrate transfer apparatus for loading and unloading substrates in a reaction chamber, includes: an arm having a distal end which is laterally movable in a straight line direction; and end-effectors for loading and unloading substrates in a reaction chamber, which include a lower end-effector and an upper end-effector. One of the lower end-effector or the upper end-effector is movably coupled to the arm at a distal end of the arm, and the other end-effector is fixed to the movably coupled end-effector. The fixed end-effector is fixed to the movably coupled end-effector.

    摘要翻译: 一种用于在反应室中装载和卸载基板的基板传送装置,包括:臂,其具有可在直线方向上横向移动的远端; 以及用于在包括下端部执行器和上端部执行器的反应室中装载和卸载基板的端部执行器。 下端部执行器或上端部执行器中的一个在臂的远端可移动地联接到臂上,而另一端部执行器固定到可移动地连接的端部执行器。 固定的末端执行器被固定到可移动地联接的末端执行器。

    Semiconductor processing apparatus with lift pin structure
    8.
    发明申请
    Semiconductor processing apparatus with lift pin structure 有权
    具有升降销结构的半导体处理装置

    公开(公告)号:US20070160507A1

    公开(公告)日:2007-07-12

    申请号:US11330662

    申请日:2006-01-12

    IPC分类号: B01J19/18

    CPC分类号: C23C16/4586

    摘要: A semiconductor processing apparatus includes: a reaction chamber; a susceptor disposed in the reaction chamber for placing a substrate thereon and having through-holes in an axial direction of the susceptor; lift pins slidably disposed in the respective through-holes for lifting the substrate over the susceptor; and a means for reducing contact resistance between the lift pins and the respective through-holes.

    摘要翻译: 半导体处理装置包括:反应室; 设置在所述反应室中的基座,用于在其上放置基板并在所述基座的轴向方向上具有通孔; 可滑动地设置在各个通孔中的提升销,用于将基板提升到基座上; 以及用于降低提升销和各个通孔之间的接触电阻的装置。

    Dual Section Module Having Shared and Unshared Mass Flow Controllers
    9.
    发明申请
    Dual Section Module Having Shared and Unshared Mass Flow Controllers 审中-公开
    具有共享和不共享质量流量控制器的双段模块

    公开(公告)号:US20120328780A1

    公开(公告)日:2012-12-27

    申请号:US13169951

    申请日:2011-06-27

    IPC分类号: C23C16/455 B05C11/10

    CPC分类号: C23C16/45561 G05D7/0641

    摘要: A dual section module with mass flow controllers, for processing wafers, includes: dual process sections integrated together; at least one mass flow controller (MFC) each shared by the dual process sections and provided in a gas line branching into two gas lines, at a branching point, connected to the respective interiors of the dual process sections and arranged symmetrically between the dual process sections; and at least one mass flow controller (MFC) each unshared by the dual process sections and provided in a gas line connected to the interior of each dual process section.

    摘要翻译: 具有用于处理晶片的质量流量控制器的双段模块包括:集成在一起的双工艺段; 至少一个质量流量控制器(MFC),每个质量流量控制器(MFC)由双重处理部分共享,并且设置在分支到两个气体管线的气体管线中,在分支点处连接到双工艺部件的相应内部并且对称地布置在双重过程 部分 和至少一个质量流量控制器(MFC),每个质量流量控制器(MFC)分别由双重处理部分分配并且设置在连接到每个双重处理部分的内部的气体管线中。

    Gas-line system for semiconductor-manufacturing apparatus
    10.
    发明授权
    Gas-line system for semiconductor-manufacturing apparatus 有权
    半导体制造装置的气体线路系统

    公开(公告)号:US06662817B2

    公开(公告)日:2003-12-16

    申请号:US09967727

    申请日:2001-09-28

    IPC分类号: G05D1113

    摘要: A gas-line system used for a semiconductor-manufacturing apparatus with at least two reactors, includes at least one gas source; a flow-divider means including an input port on the primary side, which receives a source gas from the gas source, and an output port on the secondary side, which outputs an inputted source gas by equally distributing it. The input port on the primary side is connected with the gas source and the output port on the secondary side is connected with the reactors; and one exhaust pump for exhausting gases within the reactors, which is connected with the reactors. It is desirable that the gas-line system is provided between the reactors and the exhaust pump, and an APC is included for controlling pressure for each reactor.

    摘要翻译: 用于具有至少两个反应器的半导体制造装置的气体管线系统包括至少一个气体源; 分流器装置,其包括在一侧上的输入端口,其接收来自气体源的源气体和次级侧的输出端口,其通过均匀分配输出输入的源气体。 初级侧的输入端口与气源连接,次级侧的输出端口与反应器连接; 以及一个用于排放反应器内的与反应器相连的气体的排气泵。 期望在反应器和排气泵之间设置气体管线系统,并且包括用于控制每个反应器的压力的APC。