摘要:
Deposition of a hard film of Ti-Si-N composite material on a substrate is carried out by using a source of evaporation possessing a composition of Ti.sub.a Si.sub.b (wherein "a" and "b" stand for atomic percentages respectively falling in the ranges of 75 at % .ltoreq.a.ltoreq.85 at % and 15 at %.ltoreq.b.ltoreq.25 at %, providing a+b=100 at %). Deposition is effected by a sputtering process or ion plating process in an atmosphere of an inert gas containing a nitrogen-containing reaction gas while controlling the feed rate of the reaction gas into a chamber in such a manner that the partial pressure of nitrogen is kept constant or varied continuously or stepwise. By this method there can be obtained a film having fine TiN crystalline particles uniformly dispersed in the matrix phase of Ti-Si amorphous metal or a film of functionally gradient structure in which the ratio of fine TiN crystalline particles dispersed in the matrix phase increases continuously or stepwise in the direction of thickness of the film.
摘要翻译:通过使用具有TiaSib组成的蒸发源(其中“a”和“b”表示分别落在75的范围内的原子百分比),将Ti-Si-N复合材料的硬膜沉积在基底上 at% = a = 85 at%和15 at% = b = 25 at%,提供+ b = 100 at%)。 在含有含氮反应气体的惰性气体的气氛中通过溅射法或离子镀法进行沉积,同时将反应气体的进料速率控制在室内,使得氮的分压保持恒定 或连续或逐步变化。 通过该方法可以获得均匀分散在Ti-Si非晶态金属的基体相中的细TiN结晶粒子的膜或其中分散在基体相中的细TiN结晶粒子的比例连续增加的功能梯度结构的膜,或 在膜的厚度方向上逐步地。
摘要:
Deposition of a hard film of Ti--Si--N composite material on a substrate is carried out by using a source of evaporation possessing a composition of Ti.sub.a Si.sub.b (wherein "a" and "b" stand for atomic percentages respectively falling in the ranges of 75 at %.ltoreq.a.ltoreq.85 at % and 15 at %.ltoreq.b.ltoreq.25 at %, providing a+b=100 at %). Deposition is effected by a sputtering process or ion plating process in an atmosphere of an inert gas containing a nitrogen-containing reaction gas while controlling the feed rate of the reaction gas into a chamber in such a manner that the partial pressure of nitrogen is kept constant or varied continuously or stepwise. By this method, there can be obtained a film having fine TiN crystalline particles uniformly dispersed in the matrix phase of Ti--Si amorphous metal or a film of functionally gradient structure in which the ratio of fine TiN crystalline particles dispersed in the matrix phase increases continuously or stepwise in the direction of thickness of the film.
摘要翻译:通过使用具有TiaSib组成的蒸发源(其中“a”和“b”表示分别落在75的范围内的原子百分比),将Ti-Si-N复合材料的硬膜沉积在基板上 at% = a = 85 at%和15 at% = b = 25 at%,提供+ b = 100 at%)。 在含有含氮反应气体的惰性气体的气氛中通过溅射法或离子镀法进行沉积,同时将反应气体的进料速率控制在室内,使得氮的分压保持恒定 或连续或逐步变化。 通过该方法,可以得到均匀分散在Ti-Si非晶态金属的基体相中的细TiN结晶粒子的膜或功能梯度结构的膜,其中分散在基体相中的细TiN结晶粒子的比率连续增加 或者在薄膜的厚度方向上逐步。
摘要:
Disclosed herein is a process for forming an amorphous alloy material capable of showing glass transition, which comprises holding the material between frames arranged in combination; and heating the material at a temperature between its glass transition temperature (Tg) and its crystallization temperature (Tx) and, at the same time, producing a pressure difference between opposite sides of the material, whereby the material is brought into close contact against a forming mold disposed on one side of the material. As an alternative, the forming mold is brought into close contact against the amorphous material in a direction opposite to the pressing direction for the amorphous material. By the above processes, precision-formed products of amorphous alloys can be manufactured and supplied at low cost. These formed amorphous alloy products can be used as mechanical structure parts and components of high strength and high corrosion resistance, various strength members, electronic parts, arts and crafts, original printing plates, or the like.
摘要:
Disclosed herein is a process for forming an amorphous alloy material capable of showing glass transition, which comprises holding the material between frames arranged in combination; and heating the material at a temperature between its glass transition temperature (Tg) and its crystallization temperature (Tx) and, at the same time, producing a pressure difference between opposite sides of the material, whereby the material is brought into close contact against a forming mold disposed on one side of the material. As an alternative, the forming mold is brought into close contact against the amorphous material in a direction opposite to the pressing direction for the amorphous material. By the above processes, precision-formed products of amorphous alloys can be manufactured and supplied at low cost. These formed amorphous alloy products can be used as mechanical structure parts and components of high strength and high corrosion resistance, various strength members, electronic parts, arts and crafts, original printing plates, or the like.
摘要:
An amorphous magnesium alloy has a composition of Mg.sub.a M.sub.b X.sub.c (M is Zn and/or Ga, X is La, Ce, Mm (misch metal), Y, Nd, Pr, Sm and Gd), a is from 65 to 96.5 atomic %, b is from 3 to 30 atomic %, and c is from 0.2 to 8 atomic %). The magnesium alloy has a high specific strength and does not embrittle at room temperature.
摘要:
A molten alloy having an amorphous forming ability is pressure-solidified at a pressure exceeding one atmospheric pressure to eliminate casting defects. The cooling rate during the solidification is adjusted to disperse fine crystals having a mean crystal grain diameter of 1 nm to 50 &mgr;m and a volume percentage of 5 to 40% in an amorphous alloy ingot. In this way, a uniform residual compressive stress is imparted in the amorphous alloy ingot. Furthermore, the amorphous ingot produced by this method can be strengthened by heating it at a constant temperature rising rate to infiltrate at least one of boron, carbon, oxygen, nitrogen and fluorine from the surface of the amorphous alloy ingot in a supercooled liquid state before crystallization, to thereby precipitate a high melting point compound thereof with an element forming the amorphous alloy within the alloy ingot so as to strength the alloy.
摘要:
A molten alloy was pressure-solidified under a pressure exceeding one atmospheric pressure to eliminate casting defects. The molten alloy was solidified by applying a cooling rate difference to the surface and the interior of the molten alloy to allow a compressive stress layer to remain on the surface of the amorphous alloy ingot and a tensile stress layer in the interior portion. Thus, a amorphous alloy sheet having a thickness of 1 mm or more and excellent in bending strength and impact strength is obtained.
摘要:
An electrode having an excellent corrosion resistance and long service life even in a severe corrosive environment such as in NaCl solutions for anode electrolysis in which chlorine gas or the like is produced at a high potential from the alloy surface. The electrode of the invention is provided using a precious metal-based amorphous alloy which has a good plasticity processibility and is applicable to a large-sized component. The object is implemented by provision of an electrode material for anode electrolysis which utilizes a precious metal-based amorphous alloy which satisfies the general formula NM.sub.100-a-b-c Ni.sub.a Cu.sub.b P.sub.c wherein NM comprises one or two precious metal elements selected from Pd and Pt; a, b and c being atomic percent, satisfy that 30.ltoreq.a+b.ltoreq.45,3.ltoreq.b/a.ltoreq.7, and 18.ltoreq.c.ltoreq.25, respectively; Pt is contained from 10 to 30 atom percent (at. %); and wherein a temperature width .DELTA.Tx in the supercooled liquid region (.DELTA.Tx=Tx-Tg) has a width of 70 K or more.
摘要:
Disclosed is a beryllium-free copper alloy having high strength, high electric conductivity and good bending workability and a method of manufacturing the copper alloy. Provided is a copper alloy having a composition represented by the composition formula by atom %: Cu100-a-b-c(Zr, Hf)a(Cr, Ni, Mn, Ta)b(Ti, Al)c [wherein 2.5≦a≦4.0, 0.1
摘要:
Disclosed is a beryllium-free copper alloy having high strength, high electric conductivity and good bending workability and a method of manufacturing the copper alloy. Provided is a copper alloy having a composition represented by the composition formula by atom %: Cu100-a-b-c(Zr, Hf)a(Cr, Ni, Mn, Ta)b(Ti, Al)c [wherein 2.5≦a≦4.0, 0.1