公开(公告)号：US20090212365A1

公开(公告)日：2009-08-27

申请号：US12360165

申请日：2009-01-27

申请人： Hiroyuki FUJIMOTO ,  Yuki TOGASHI

发明人： Hiroyuki FUJIMOTO ,  Yuki TOGASHI

IPC分类号： H01L29/78 ,  H01L21/20

CPC分类号： H01L23/535 ,  H01L21/28525 ,  H01L21/76879 ,  H01L21/84 ,  H01L27/0688 ,  H01L29/66772 ,  H01L29/7828 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.

摘要翻译： 半导体器件包括：单晶衬底; 形成在单晶衬底上的层间膜; 穿透层间膜并且部分地暴露单晶衬底的上表面的接触孔; 形成在所述接触孔的内表面上的侧壁; 包含少量缺陷的多个第一单晶层，填充接触孔，并覆盖层间膜; 以及包含许多缺陷并覆盖层间膜的侧壁和上表面的多个第二单晶层，以夹在第一单晶层和层间膜之间。

公开(公告)号：US20070210365A1

公开(公告)日：2007-09-13

申请号：US11679386

申请日：2007-02-27

申请人： Yuki TOGASHI ,  Hiroyuki KITAMURA

发明人： Yuki TOGASHI ,  Hiroyuki KITAMURA

IPC分类号： H01L29/00

CPC分类号： H01L28/84 ,  H01L27/10817 ,  H01L27/10852

摘要： A semiconductor device includes a cylindrical capacitor. A size of hemispherical silicon grains (HSGs) formed in a straight portion of the cylindrical capacitor is smaller than a size of HSGs formed in a bowing portion of the cylindrical capacitor.

摘要翻译： 半导体器件包括圆柱形电容器。 形成在圆筒形电容器的直线部分中的半球形硅晶粒（HSG）的尺寸小于在圆柱形电容器的弯曲部分中形成的HSG的尺寸。

公开(公告)号：US20120199984A1

公开(公告)日：2012-08-09

申请号：US13408318

申请日：2012-02-29

申请人： Osamu FUJITA ,  Yuki TOGASHI

发明人： Osamu FUJITA ,  Yuki TOGASHI

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/6835 ,  H01L21/30655 ,  H01L21/76232 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/17181 ,  H01L2224/73104 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/01047 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.

摘要翻译： 半导体器件包括材料层，该材料层包括在第一表面中具有开口的第一表面和沟槽。 沟槽形成在材料层中。 沟槽包括锥形部分和垂直部分。 锥形部分与开口接触并且包括扇形形成沟槽。 垂直部分具有基本垂直的侧壁。 扇形沟槽的宽度大于垂直部分的宽度。