公开(公告)号：US06228651B1

公开(公告)日：2001-05-08

申请号：US09223279

申请日：1998-12-30

申请人： Hiroyuki Fukuda ,  Takashi Nakanishi ,  Mitsuru Hirose

发明人： Hiroyuki Fukuda ,  Takashi Nakanishi ,  Mitsuru Hirose

IPC分类号： G01N3320

CPC分类号： C01B25/234 ,  H01L21/31111 ,  Y10S438/904 ,  Y10S438/953 ,  Y10T436/15 ,  Y10T436/25 ,  Y10T436/25375 ,  Y10T436/255

摘要： A process for the preparation of an analytical sample characterized by depositing and separating solely the impurity to be analyzed from phosphoric acid; a process for analysis of the impurity characterized by depositing and separating solely the impurity from phosphoric acid and applying the separated material to analysis; a process for preparation of high grade phosphoric acid characterized by depositing and separating solely the impurity from phosphoric acid to be purified; a process for the fabrication of a semiconductor device characterized by using phosphoric acid, the impurity content of which is not more than 10−3 Bq/mL, defined by the concentration of a contained radioactive element selected from the group consisting of Pb, Bi and Po, as a processing solution.

摘要翻译： 一种用于制备分析样品的方法，其特征在于仅从磷酸中分离和分离待分析的杂质; 一种用于分析杂质的方法，其特征在于仅将杂质从磷酸沉积和分离，并将分离的材料应用于分析; 一种制备高级磷酸的方法，其特征在于仅将杂质从需要纯化的磷酸中沉淀和分离; 一种用于制造半导体器件的方法，其特征在于使用杂质含量不超过10-3Bq / mL的磷酸，其由选自Pb，Bi和 宝，作为处理方案。

公开(公告)号：US5910257A

公开(公告)日：1999-06-08

申请号：US637432

申请日：1996-04-25

申请人： Hiroyuki Fukuda ,  Takashi Nakanishi ,  Mitsuru Hirose

发明人： Hiroyuki Fukuda ,  Takashi Nakanishi ,  Mitsuru Hirose

IPC分类号： G01N31/00 ,  C01B25/234 ,  G01N1/10 ,  G01N27/26 ,  G01T1/167 ,  G21H5/02 ,  H01L21/304 ,  H01L21/311 ,  H01L21/302

CPC分类号： C01B25/234 ,  H01L21/31111 ,  Y10S438/904 ,  Y10S438/953 ,  Y10T436/15 ,  Y10T436/25 ,  Y10T436/25375 ,  Y10T436/255

摘要： A process for the preparation of an analytical sample characterized by depositing and separating solely the impurity to be analyzed from phosphoric acid; a process for analysis of the impurity characterized by depositing and separating solely the impurity from phosphoric acid and applying the separated material to analysis; a process for preparation of high grade phosphoric acid characterized by depositing and separating solely the impurity from phosphoric acid to be purified; a process for the fabrication of a semiconductor device characterized by using phosphoric acid, the impurity content of which is not more than 10.sup.-3 Bq/mL, defined by the concentration of a contained radioactive element selected from the group consisting of Pb, Bi and Po, as a processing solution.

摘要翻译： 一种用于制备分析样品的方法，其特征在于仅从磷酸中分离和分离待分析的杂质; 一种用于分析杂质的方法，其特征在于仅将杂质从磷酸沉积和分离，并将分离的材料应用于分析; 一种制备高级磷酸的方法，其特征在于仅将杂质从需要纯化的磷酸中沉淀和分离; 一种用于制造半导体器件的方法，其特征在于使用杂质含量不超过10-3Bq / mL的磷酸，其由选自Pb，Bi和 宝，作为处理方案。

公开(公告)号：US09429374B2

公开(公告)日：2016-08-30

申请号：US14376652

申请日：2012-02-06

申请人： Rinya Kojo ,  Hiroyuki Fukuda ,  Yuta Tamura ,  Yoshikazu Yoshida ,  Hideki Takahashi ,  Ryo Matsuoka ,  Yuzuru Kataoka

发明人： Rinya Kojo ,  Hiroyuki Fukuda ,  Yuta Tamura ,  Yoshikazu Yoshida ,  Hideki Takahashi ,  Ryo Matsuoka ,  Yuzuru Kataoka

IPC分类号： C21B7/24 ,  F28F27/00 ,  C21D9/04 ,  C21D11/00 ,  C21D1/62 ,  F27D15/02

CPC分类号： F28F27/00 ,  C21D1/62 ,  C21D9/04 ,  C21D11/005 ,  F27D15/0213

摘要： A rail cooling method includes: calculating, based on a relation between temperatures and an amount of warp of the rail cooled to ambient temperature after the forced cooling, the temperatures including a cooling start temperature of the head, a cooling end temperature of the head, a cooling start temperature of the foot and a cooling end temperature of the foot, a target value or a target value range for each of the temperatures so that the amount of warp of the rail at ambient temperature falls within a permissive range; and setting a cooling condition in accordance with the target value or the target value range to perform the forced cooling on the head and the foot.

摘要翻译： 轨道冷却方法包括：基于温度与强制冷却后冷却至环境温度的轨道的翘曲量之间的关系，计算包括头部的冷却开始温度，头部的冷却结束温度， 脚的冷却开始温度和脚的冷却结束温度，目标值或目标值范围，使得轨道在环境温度下的翘曲量落入允许范围内; 并根据目标值或目标值范围设定冷却条件，对头部和脚部进行强制冷却。

公开(公告)号：US08165390B2

公开(公告)日：2012-04-24

申请号：US12141491

申请日：2008-06-18

申请人： Kazumasa Kunugi ,  Akira Matsushita ,  Hiroyuki Fukuda

发明人： Kazumasa Kunugi ,  Akira Matsushita ,  Hiroyuki Fukuda

IPC分类号： G06K9/00

CPC分类号： G06T11/001

摘要： N-band image data are output from an N-band image capture device, being capable of N>4 multiband image capturing, to an image data processing device. An image data evaluation information provision unit provides a determination unit with evaluation information on the basis of the input N-band image data. On the basis of the evaluation information, the determination unit determines whether to set the N-band image data or M-band image data having a smaller band number than the N-band image data as image data to be output. On the basis of a determination result of the determination unit, an output image data selection unit selects either the N-band image data or the M-band image data as the image data to be output to an image data recording unit.

摘要翻译： 将N波段图像数据从能够进行N> 4多波段图像捕获的N波段图像捕获装置输出到图像数据处理装置。 图像数据评估信息提供单元基于输入的N波段图像数据向判定单元提供评估信息。 基于评价信息，确定单元确定是否将具有比N波段图像数据更小的带数的N波段图像数据或M波段图像数据设置为要输出的图像数据。 基于确定单元的确定结果，输出图像数据选择单元选择N波段图像数据或M波段图像数据作为要输出到图像数据记录单元的图像数据。

公开(公告)号：US07722738B2

公开(公告)日：2010-05-25

申请号：US10704129

申请日：2003-11-10

申请人： Katsushi Kishimoto ,  Yusuke Fukuoka ,  Yasushi Fujioka ,  Hiroyuki Fukuda ,  Katsuhiko Nomoto

发明人： Katsushi Kishimoto ,  Yusuke Fukuoka ,  Yasushi Fujioka ,  Hiroyuki Fukuda ,  Katsuhiko Nomoto

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/5096 ,  C23C16/24 ,  H01J37/32568 ,  H01J2237/2001 ,  H01L21/67069 ,  Y10T29/49108

摘要： A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided.A chamber 11 is formed so that the inside thereof can be controlled at a vacuum of an arbitrary degree. Anode supports 6 for supporting an anode 4 are placed at the bottom of the internal structure 8. The anode 4 is made of a material having a high electrical conductivity and a high heat resistance. The temperature of the anode 4 is controlled by a heater 24 so as to be in a range of from room temperature to 600° C. A cathode 2 is placed on a cathode support 5 so as to face the anode 4. The cathode support 5 is attached to an internal structure 8 made of a frame in a rectangular prism form provided within the chamber 11.

摘要翻译： 提供一种半导体器件制造单元，其中可以以简单的结构放置阴极和阳极; 其中可以获得优异的成膜和膜厚分布; 并且其中不需要设置冷却装置。 形成室11，使得其内部能够被任意程度的真空度控制。 阳极支撑6用于支撑阳极4放置在内部结构8的底部。阳极4由具有高导电性和高耐热性的材料制成。 阳极4的温度由加热器24控制在室温至600℃的范围内。阴极2被放置在阴极支撑件5上以面对阳极4.阴极支撑件5 附接到由设置在室11内的矩形棱镜形式的框架构成的内部结构8。

公开(公告)号：US07032536B2

公开(公告)日：2006-04-25

申请号：US10680213

申请日：2003-10-08

申请人： Yusuke Fukuoka ,  Yasushi Fujioka ,  Katsushi Kishimoto ,  Hiroyuki Fukuda ,  Katsuhiko Nomoto

发明人： Yusuke Fukuoka ,  Yasushi Fujioka ,  Katsushi Kishimoto ,  Hiroyuki Fukuda ,  Katsuhiko Nomoto

IPC分类号： C23C16/50

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32724

摘要： A thin film formation apparatus for forming a thin film on a substrate is provided, which comprises: a reaction chamber; a gas introduction section for introducing a reactant gas into the reaction chamber; an evacuation section for exhausting the reactant gas from the reaction chamber; first and second planar electrodes provided in the reaction chamber; first and second support members which respectively support the first and second electrodes in parallel relation; a high frequency power source for applying high frequency power between the first and second electrodes; and a heating section for heating one of the first and second electrodes; wherein the substrate is placed on the heated electrode, and at least one of the first and second electrodes is supported movably in the direction of thermal expansion by the corresponding support member. With this arrangement, the variation in the spacing between the first electrode (anode electrode) and the second electrode (cathode electrode) can be reduced when the first and second electrodes are heated.

摘要翻译： 提供一种用于在基板上形成薄膜的薄膜形成装置，其包括：反应室; 用于将反应气体引入反应室的气体导入部， 用于从反应室排出反应气体的排气部; 设置在反应室中的第一和第二平面电极; 第一和第二支撑构件，其分别以平行关系支撑第一和第二电极; 用于在第一和第二电极之间施加高频电力的高频电源; 以及用于加热所述第一和第二电极之一的加热部分; 其中所述基板被放置在所述加热的电极上，并且所述第一和第二电极中的至少一个被所述相应的支撑构件沿热膨胀的方向可移动地支撑。 利用这种布置，当第一和第二电极被加热时，可以减小第一电极（阳极电极）和第二电极（阴极电极）之间的间隔的变化。

公开(公告)号：US06752758B2

公开(公告)日：2004-06-22

申请号：US10413694

申请日：2003-04-15

申请人： Nobuyuki Motoki ,  Mitsunobu Ono ,  Takakazu Ishigami ,  Hiroyuki Fukuda ,  Yoshihiro Hayashi ,  Kenji Murakami ,  Yasufumi Shimoe

发明人： Nobuyuki Motoki ,  Mitsunobu Ono ,  Takakazu Ishigami ,  Hiroyuki Fukuda ,  Yoshihiro Hayashi ,  Kenji Murakami ,  Yasufumi Shimoe

IPC分类号： A61B100

CPC分类号： A61B1/0052 ,  A61B1/0016

摘要： An operational remote controller integrates a joystick for bending a bending portion of an inserted portion in an endoscope. A bending lever stands on the joystick. For every automatically returning of the bending lever to a neutral position, a CPU of the operational remote controller detects the neutral position and sets an insensitive band within a predetermined range of the neutral position. Thus, the insensitive band can be set within a relatively narrow range irrespective of variation of neutral positions. The CPU supplies positional information of the bending lever to a control circuit for controlling a motor drive circuit. The control circuit controls a motor drive circuit based on the supplied positional information, and the motor drive circuit drives a motor to bend the bending portion of the inserted portion.

摘要翻译： 操作遥控器集成了用于弯曲插入部分在内窥镜中的弯曲部分的操纵杆。 操纵杆上有弯曲杆。 为了将弯曲杆自动返回到中立位置，操作遥控器的CPU检测中立位置，并将不敏感带设置在中立位置的预定范围内。 因此，不管中性位置的变化，不敏感带可以设定在相对窄的范围内。 CPU将弯曲杆的位置信息提供给用于控制电动机驱动电路的控制电路。 控制电路基于所提供的位置信息来控制电动机驱动电路，并且电动机驱动电路驱动电动机弯曲插入部分的弯曲部分。

公开(公告)号：US06715684B1

公开(公告)日：2004-04-06

申请号：US09655379

申请日：2000-09-05

申请人： Hiroyuki Fukuda ,  Akira Matsui ,  Mutsumi Kikuchi

发明人： Hiroyuki Fukuda ,  Akira Matsui ,  Mutsumi Kikuchi

IPC分类号： G06K710

CPC分类号： G06K7/14

摘要： A reconstituting section obtains block-address information from each of read out blocks. According to the obtained pattern in the block-address information obtained by the reconstituting section, a reproducing section determines a code-scanning state of manual scanning performed along a scanning direction. When scanning is performed in an off-code state and an overspeed state, and when scanning is terminated in an incomplete state, notification is performed in each of modes differing from each other depending on the scanning state.

摘要翻译： 重构部分从每个读出的块获得块地址信息。 根据由重构部分获得的块地址信息中获得的模式，再现部分确定沿着扫描方向执行的手动扫描的代码扫描状态。 当在脱离码状态和超速状态下执行扫描时，并且当在不完整状态下终止扫描时，根据扫描状态彼此不同地进行各种模式的通知。

公开(公告)号：USD473306S1

公开(公告)日：2003-04-15

申请号：US29141515

申请日：2001-05-07

申请人： Nobuyuki Motoki ,  Hiroyuki Fukuda ,  Yoshihiro Hayashi

设计人： Nobuyuki Motoki ,  Hiroyuki Fukuda ,  Yoshihiro Hayashi

公开(公告)号：US06520908B1

公开(公告)日：2003-02-18

申请号：US09671560

申请日：2000-09-27

申请人： Yuichi Ikeda ,  Hiroyuki Fukuda

发明人： Yuichi Ikeda ,  Hiroyuki Fukuda

IPC分类号： A61B100

CPC分类号： A61B1/00121 ,  A61B1/00066

摘要： An electronic endoscope in accordance with the present invention consists broadly of an operation unit, an elongated insertion unit, and a universal cord. The operation unit has a treatment appliance insertion port and various operation switches and fills the role of a hand-held unit. The insertion unit extends from the lower end of the operation unit in a direction substantially corresponding to the longitudinal direction of the operation unit. The universal cord extends in a direction crossing the longitudinal direction of the operation unit at an acute angle, and accommodates at least a signal cable extending from the top of the operation unit.

摘要翻译： 根据本发明的电子内窥镜广泛地包括操作单元，细长插入单元和通用线。 操作单元具有处理器具插入口和各种操作开关，并充满了手持单元的作用。 插入单元从与操作单元的纵向基本对应的方向从操作单元的下端延伸。 通用线在与操作单元的纵向方向成锐角的方向上延伸，并且至少容纳从操作单元的顶部延伸的信号电缆。