摘要:
A semiconductor integrated circuit and a method for reducing the consumed power are provided. A comparator outputs bits having the same level, which correspond to each other, of a last input stored in a register and a current input that acts as an input signal. A zero counter counts the number of the bits having the same level output from the comparator. If the number of the bits having the same level is smaller than a predetermined number, the current input is not similar to the last input. Consequently, an instruction is given to a flip-flop to invert the current input. The inverted current input becomes similar to the last input. Thus, the consumed power of a logic can be reduced.
摘要:
In order to improve a withstand voltage and implement a gate array SOI semiconductor integrated circuit device having a large gate width, a region consisting of end cells (49) is provided on each end of a region formed by repeatedly arranging basic cells (BC) consisting of both transistor regions (32, 33) in a first direction and while symmetrically arranging the same to be folded in a second direction. Both ends of a channel region of a PMOS transistor (42) are drawn out in the second direction to provide a P-type semiconductor layer just under a field shielding gate electrode (FG), and this semiconductor layer is drawn also in the first direction to be connected with a P-type semiconductor layer of the end cell (49). A first source potential is applied to a region (PBD) which is bonded with one of the P-type semiconductor layers. Also as to an NMOS transistor (41) which is adjacent through a field oxide film (FO), on the other hand, an N-type semiconductor layer is similarly provided so that this N-type semiconductor layer is also connected with that of the end cell (49). A second source potential is applied to a region (NBD).
摘要:
A semiconductor integrated circuit device having a SOI structure which can prevent a deterioration in the breakdown voltage of a transistor without damaging integration, and a method for manufacturing the semiconductor integrated circuit device are obtained. An embedded oxide film is not formed over the whole face of a P type silicon layer but has an opening in a region which is placed below a gate electrode. The opening is filled in to form a penetration P layer. Accordingly, a SOI layer is electrically connected to the P type silicon layer through the penetration P layer. The plane position and shape of the gate electrode conform to those of the penetration P layer.
摘要:
In order to improve a withstand voltage and implement a gate array SOI semiconductor integrated circuit device having a large gate width, a region consisting of end cells (49) is provided on each end of a region formed by repeatedly arranging basic cells (BC) consisting of both transistor regions (32, 33) in a first direction and while symmetrically arranging the same to be folded in a second direction. Both ends of a channel region of a PMOS transistor (42) are drawn out in the second direction to provide a P-type semiconductor layer just under a field shielding gate electrode (FG), and this semiconductor layer is drawn also in the first direction to be connected with a P-type semiconductor layer of the end cell (49). A first source potential is applied to a region (PBD) which is bonded with one of the P-type semiconductor layers. Also as to an NMOS transistor (41) which is adjacent through a field oxide film (FO), on the other hand, an N-type semiconductor layer is similarly provided so that this N-type semiconductor layer is also connected with that of the end cell (49). A second source potential is applied to a region (NBD).
摘要:
A highly reliable data holding circuit with a reduced circuit area and reduced power consumption is disclosed. Output terminals (DO, DOB) are connected to input terminals (DI, DIB) receiving signals at H and L levels (potentials VDD and GND) in mutually exclusive relation through transistors (MN2, MN1) and inverters (INV1, INV2). Input terminals of the inverters (INV1, INV2) are connected to power supplies (VDD) through transistors (MP2, MP1) having gate electrodes connected to output terminals of the inverters (INV2, INV1), respectively. The transistors (MN2, MN1) cause a voltage drop of the signals to be applied to the inverters (INV1, INV2) by the amount of a threshold voltage (Vthn). One of the transistors (MP1, MP2) which receives a signal at L level at its control terminal provides a potential (VDD) to the input terminal of one of the inverters (INV1, INV2) which is to output a signal at L level, compensating for the voltage drop by the amount of the threshold voltage (Vthn).
摘要:
A logic circuit (L.sub.i) is connected between a virtual power supply line (VDDV) connected to an actual power supply (VDD) through a PMOS transistor (Q1) and a virtual grounding line (GNDV) connected to an actual ground (GND) through an NMOS transistor (Q2). During an active period, the transistors (Q1, Q2) are constantly conducting, and the virtual power supply line (VDDV) and virtual grounding line (GNDV) are at the power supply potential (VDD) and ground potential (GND), respectively. During a standby period, the transistors (Q1, Q2) periodically repeat conduction/non-conduction to charge and discharge the virtual power supply line (VDDV) and virtual grounding line (GNDV), suppressing power consumption while preventing loss of information held by the logic circuit (L.sub.i).
摘要:
A Silicon-On-Insulator (SOI) CMOS circuit comprises a plurality of PMOS transistors connected in series to each other, each of the plurality of PMOS transistors having its body and gate connected to each other, and at least an NMOS transistor connected to one of the plurality of PMOS transistors, the NMOS transistor having its body connected to a low reference potential having a value of ground. The SOI CMOS circuit can further comprise a plurality of potential limiting circuits each connected between the body and gate of each of the plurality of PMOS transistors, for setting a lower limit of the potential of the body of each of the plurality of PMOS transistors to a voltage between a high reference potential and a potential obtained by subtracting a built-in potential from the high reference potential.
摘要翻译:绝缘体上硅绝缘体(SOI)CMOS电路包括彼此串联连接的多个PMOS晶体管,多个PMOS晶体管中的每一个具有彼此连接的主体和栅极,以及连接到一个的至少一个NMOS晶体管 的NMOS晶体管,其NMOS晶体管的主体连接到具有接地值的低参考电位。 SOI CMOS电路还可以包括多个限制电路,每个电位限制电路连接在多个PMOS晶体管中的每一个的主体和栅极之间,用于将多个PMOS晶体管的每个的主体的电位的下限设置为 通过从高参考电位减去内置电位而获得的高参考电位和电位之间的电压。
摘要:
A flip-flop circuit is constituted of two latch circuits of the same structure that are cascaded. The latch circuits each includes an inverter formed of a P channel transistor and an N channel transistor, an N channel transistor connected between a common node and a ground node, and two data input/output terminals. Two kinds of clock signals supplied to gates of N channel transistors are complementary to each other.
摘要:
A Silicon-On-Insulator (SOI) CMOS circuit includes a plurality of PMOS transistors connected in series to each other and at least one NMOS transistor connected to one of the PMOS transistors. The NMOS transistor has its body connected to a low reference potential having a value of ground. The SOI CMOS circuit further includes a body potential generating circuit which generates a body potential between a high reference potential and a potential obtained by subtracting a built-in potential from the high reference potential. The body potential generating circuit applies the high potential to the bodies of the PMOS transistors.
摘要翻译:绝缘体上硅绝缘体(SOI)CMOS电路包括彼此串联连接的多个PMOS晶体管和连接到PMOS晶体管之一的至少一个NMOS晶体管。 NMOS晶体管的主体连接到具有接地值的低参考电位。 SOI CMOS电路还包括体电位发生电路,其产生高参考电位和通过从高参考电位减去内置电位而获得的电位之间的体电位。 体电位产生电路将高电位施加到PMOS晶体管的主体。
摘要:
A field shield portion consisting of a kind of transistor is formed to electrically insulate an NMOS region of a memory cell from other regions. The field shield portion includes a field shield gate electrode layer, a p type region and a gate insulating film. Threshold value of this transistor is set higher than the power supply voltage, and field gate electrode layer thereof is in a floating state. It is unnecessary to provide a contact portion for applying a prescribed voltage at field shield gate electrode layer. Therefore, the region for forming the contact portion in field shield gate electrode layer can be reduced. As a result, a semiconductor device of which layout area is reduced, is provided.