公开(公告)号：US06483398B2

公开(公告)日：2002-11-19

申请号：US09848368

申请日：2001-05-04

申请人： Hiroyuki Nagamori ,  Hitoshi Akamine ,  Shun Imai ,  Satoshi Arai ,  Yasuhiro Nunogawa

发明人： Hiroyuki Nagamori ,  Hitoshi Akamine ,  Shun Imai ,  Satoshi Arai ,  Yasuhiro Nunogawa

IPC分类号： H01P518

CPC分类号： H01P5/185 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/15153 ,  H01L2924/15313 ,  H01L2924/19105 ,  H01P5/187 ,  H01L2924/00012

摘要： A directional coupler for detecting an output of a high frequency circuit module includes a main line and a sub-line overlapped with the main line with a dielectric material. The sub-line is set, in width, narrower than the main line and both side edges of the sub-line are allocated at the internal side of both side edges of the main line. Accordingly, the sub-line is surely provided opposed to the main line in the total width area and a signal current flowing into the main line can be detected in higher accuracy. Therefore, a wireless communication system for controlling an output of the high frequency circuit module by including such directional coupler assures stable communication.

摘要翻译： 用于检测高频电路模块的输出的定向耦合器包括主电线和与主电路与电介质材料重叠的子线。 子线的宽度比主线窄，子线的两侧边缘分配在主线的两侧边缘的内侧。 因此，在总宽度区域中可靠地设置与主线相对的副线，并且可以以更高的精度检测流入主线的信号电流。 因此，通过包括这种定向耦合器来控制高频电路模块的输出的无线通信系统确保了稳定的通信。

公开(公告)号：US06972640B2

公开(公告)日：2005-12-06

申请号：US10260310

申请日：2002-10-01

申请人： Hiroyuki Nagamori ,  Hitoshi Akamine ,  Shun Imai ,  Satoshi Arai ,  Yasuhiro Nunogawa

发明人： Hiroyuki Nagamori ,  Hitoshi Akamine ,  Shun Imai ,  Satoshi Arai ,  Yasuhiro Nunogawa

IPC分类号： H01P5/18 ,  H03F3/60 ,  H03G3/20 ,  H04B1/04

CPC分类号： H01P5/185 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/15153 ,  H01L2924/15313 ,  H01L2924/19105 ,  H01P5/187 ,  H01L2924/00012

摘要： A directional coupler for detecting an output of a high frequency circuit module includes a main line and a sub-line overlapped with the main line with a dielectric material. The sub-line is set, in width, narrower than the main line and both side edges of the sub-line are allocated at the internal side of both side edges of the main line. Accordingly, the sub-line is surely provided opposed to the main line in the total width area and a signal current flowing into the main line can be detected in higher accuracy. Therefore, a wireless communication system for controlling an output of the high frequency circuit module by including such directional coupler assures stable communication.

摘要翻译： 用于检测高频电路模块的输出的定向耦合器包括主电线和与主电路与电介质材料重叠的子线。 子线的宽度比主线窄，子线的两侧边缘分配在主线的两侧边缘的内侧。 因此，在总宽度区域中可靠地设置与主线相对的副线，并且可以以更高的精度检测流入主线的信号电流。 因此，通过包括这种定向耦合器来控制高频电路模块的输出的无线通信系统确保了稳定的通信。

公开(公告)号：US07050769B2

公开(公告)日：2006-05-23

申请号：US10170375

申请日：2002-06-14

申请人： Shun Imai ,  Hitoshi Akamine ,  Takashi Ito ,  Satoshi Arai

发明人： Shun Imai ,  Hitoshi Akamine ,  Takashi Ito ,  Satoshi Arai

IPC分类号： H04B1/04

CPC分类号： H04B1/005 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H04B1/406 ,  H04B1/48 ,  H01L2924/00012 ,  H01L2924/00

摘要： The invention realizes a wireless communication module that is capable of transmitting the fundamental wave with low loss and reducing the double higher harmonic wave level to a desired level or lower as the whole module. The invention provides a front end module to be used for a wireless communication system such as cellular phone in which at least an output power amplifier, a matching circuit, and a low-pass filter are mounted on one insulating substrate and these circuits are connected in the above-mentioned order, wherein the relative phase of the double higher harmonic wave impedance between phases in view of the matching circuit side and the low-pass filter side from the connection point between the matching circuit and the low-pass filter is set in a range of 180 degrees ±90 degrees.

摘要翻译： 本发明实现了一种无线通信模块，其能够以低损耗发送基波，并将整个模块的双倍高次谐波水平降低到期望水平或更低。 本发明提供一种前端模块，用于无线通信系统，例如蜂窝电话，其中至少一个输出功率放大器，匹配电路和低通滤波器安装在一个绝缘基板上，这些电路连接在 上述顺序，其中从匹配电路和低通滤波器之间的连接点考虑到匹配电路侧和低通滤波器侧的相位之间的双重高次谐波阻抗的相对相位设置在 范围为180度±90度。

公开(公告)号：US20060051038A1

公开(公告)日：2006-03-09

申请号：US11206766

申请日：2005-08-19

申请人： Shun Imai ,  Hitoshi Akamine ,  Takashi Ito ,  Satoshi Arai

发明人： Shun Imai ,  Hitoshi Akamine ,  Takashi Ito ,  Satoshi Arai

IPC分类号： G02B6/00

CPC分类号： H04B1/005 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H04B1/406 ,  H04B1/48 ,  H01L2924/00012 ,  H01L2924/00

摘要： The invention realizes a wireless communication module that is capable of transmitting the fundamental wave with low loss and reducing the double higher harmonic wave level to a desired level or lower as the whole module. The invention provides a front end module to be used for a wireless communication system such as cellular phone in which at least an output power amplifier, a matching circuit, and a low-pass filter are mounted on one insulating substrate and these circuits are connected in the above-mentioned order, wherein the relative phase of the double higher harmonic wave impedance between phases in view of the matching circuit side and the low-pass filter side from the connection point between the matching circuit and the low-pass filter is set in a range of 180 degrees ±90 degrees.

公开(公告)号：US06433639B1

公开(公告)日：2002-08-13

申请号：US09716935

申请日：2000-11-22

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F316

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the, EDGE (for a linear amplifying action).

摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换终端的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

公开(公告)号：US06463267B1

公开(公告)日：2002-10-08

申请号：US09550903

申请日：2000-04-17

申请人： Hitoshi Akamine ,  Nobuhiko Ishihara ,  Tetsuaki Adachi ,  Yasuhiro Nunogawa ,  Kogi Sugita

发明人： Hitoshi Akamine ,  Nobuhiko Ishihara ,  Tetsuaki Adachi ,  Yasuhiro Nunogawa ,  Kogi Sugita

IPC分类号： H04B700

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/48 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03G3/3042 ,  H03G3/3047 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A high frequency power amplifying apparatus is provided with an amplifying section with a plurality of amplifying stages connected in cascade. A power control signal is supplied to the amplifying section through a control terminal so as to control the output of the high frequency power amplifying apparatus. Each of the amplifying stages has a gain smaller than that of a preceding stage. Gain control signals generated from the power control signal are supplied to the respective amplifying stages. Dividing resistors are connected in series with one another between the control terminal and a reference potential so as to divide the voltage of the power control signal to thereby generate a plurality of different gain control signals. Different ones of the gain control signals are supplied to the respective amplifying stages, an absolute value of a voltage of the gain control signal applied to each stage is larger than that applied to an earlier preceding stage.

摘要翻译： 高频功率放大装置具有放大部分，其具有串联连接的多个放大级。 功率控制信号通过控制端子提供给放大部分，以控制高频功率放大装置的输出。 每个放大级具有比前一级小的增益。 从功率控制信号生成的增益控制信号被提供给相应的放大级。 分压电阻器在控制端子和参考电位之间彼此串联连接，以便分压功率控制信号的电压从而产生多个不同的增益控制信号。 不同的增益控制信号被提供给各个放大级，施加到每一级的增益控制信号的电压的绝对值大于施加到前一级的增益控制信号的电压的绝对值。

公开(公告)号：US20050208905A1

公开(公告)日：2005-09-22

申请号：US11098454

申请日：2005-04-05

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F3/189 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01Q11/12 ,  H03F1/02 ,  H03F1/22 ,  H03F1/32 ,  H03F3/60 ,  H03F3/72 ,  H03G1/00 ,  H04B1/04 ,  H04K1/02

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

公开(公告)号：US07145394B2

公开(公告)日：2006-12-05

申请号：US11098454

申请日：2005-04-05

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F3/16

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

公开(公告)号：US06617927B2

公开(公告)日：2003-09-09

申请号：US10122382

申请日：2002-04-16

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F316

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

公开(公告)号：US06897728B2

公开(公告)日：2005-05-24

申请号：US10614015

申请日：2003-07-08

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F3/189 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01Q11/12 ,  H03F1/02 ,  H03F1/22 ,  H03F1/32 ,  H03F3/60 ,  H03F3/72 ,  H03G1/00 ,  H04B1/04 ,  H04K1/02 ,  H03F3/16

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端子; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。