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21 条记录 (耗时 0.022 秒)

    Film formation device
    5.
    发明授权
    Film formation device 有权

    公开(公告)号：US10121931B2

    公开(公告)日：2018-11-06

    申请号：US13990641

    申请日：2011-03-15

    申请人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida

    发明人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida

    IPC分类号： B05B7/04 ,  C23C16/448 ,  C23C16/455 ,  H01L31/18 ,  B05B1/04 ,  B05B7/00

    摘要： The present invention includes a mist generator that generates a mist of a raw material of a film to be formed, and a mist jet nozzle that jets the mist generated by the mist generator to a substrate on which a film is to be formed. The mist jet nozzle includes: a main body having a hollow portion; a mist supply port that supplies the mist; a spout that jets the mist to the outside; a carrier gas supply port that supplies a carrier gas; and a shower plate having a plurality of holes formed therein. By the arrangement of the shower plate, the hollow portion is divided into a first space connected to the carrier gas supply port and a second space connected to the spout. The mist supply port is connected to the second space.

    APPARATUS FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING METAL OXIDE FILM, AND METAL OXIDE FILM
    7.
    发明申请
    APPARATUS FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING METAL OXIDE FILM, AND METAL OXIDE FILM 有权
    用于形成金属氧化物膜的方法，形成金属氧化物膜的方法和金属氧化物膜

    公开(公告)号：US20130039843A1

    公开(公告)日：2013-02-14

    申请号：US13643380

    申请日：2010-06-01

    申请人： Takahiro Shirahata ,  Hiroyuki Orita ,  Akio Yoshida ,  Shizuo Fujita ,  Toshiyuki Kawaharamura

    发明人： Takahiro Shirahata ,  Hiroyuki Orita ,  Akio Yoshida ,  Shizuo Fujita ,  Toshiyuki Kawaharamura

    IPC分类号： C23C16/06 ,  C01B13/00 ,  C23C16/02

    CPC分类号： C23C16/407 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1287 ,  C23C18/1291

    摘要： A film forming apparatus (100) according to one embodiment of the present invention includes a first solution container (5A), a second solution container (5B), a reaction chamber (1), a first path (L1), and a second path (L2). The first solution container (5A) stores a source solution (10) containing metal. The second solution container (5B) stores hydrogen peroxide. A substrate (2) is disposed in the reaction chamber (1), and the reaction chamber (1) includes a heating unit (3) that heats the substrate. The first path (L1) supplies a source solution (11) from the first solution container (5A) to the reaction chamber (1). The second path (L2) supplies hydrogen peroxide from the second solution container (5B) to the reaction chamber (1).

    摘要翻译： 根据本发明的一个实施方案的成膜设备（100）包括第一溶液容器（5A），第二溶液容器（5B），反应室（1），第一路径（L1）和第二路径 （L2）。 第一溶液容器（5A）存储含有金属的源溶液（10）。 第二溶液容器（5B）存储过氧化氢。 基板（2）设置在反应室（1）中，反应室（1）包括加热基板的加热单元（3）。 第一路径（L1）将源解决方案（11）从第一溶液容器（5A）供应到反应室（1）。 第二路径（L2）从第二溶液容器（5B）向反应室（1）供应过氧化氢。