公开(公告)号：US20110291271A1

公开(公告)日：2011-12-01

申请号：US13206987

申请日：2011-08-10

申请人： Hiroyuki SAKAI ,  Takeshi FUKUDA ,  Shinji UJITA ,  Yasufumi KAWAI

发明人： Hiroyuki SAKAI ,  Takeshi FUKUDA ,  Shinji UJITA ,  Yasufumi KAWAI

IPC分类号： H01L23/48 ,  H01L21/283

CPC分类号： H01L23/5222 ,  H01L23/3114 ,  H01L23/5221 ,  H01L23/5225 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/061 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/141 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/20752 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01P3/085 ,  H01P11/003 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A semiconductor chip such as an MMIC is provided. The semiconductor chip has: a Si semiconductor as a substrate; and a low-loss transmission line, and can be easily connected to a circuit board on which the semiconductor chip is to be mounted and can ensure a stable GND potential. The semiconductor chip is a flip-chip semiconductor chip, and includes: a Si substrate; an integrated circuit manufactured on a main surface of the substrate; a dielectric film formed above the integrated circuit; and a conductor film for grounding formed on an upper surface of the dielectric film. The integrated circuit includes a wiring layer including a signal line which transmits signals for the integrated circuit. The signal line, the dielectric film, and the conductor film constitute a microstrip line.

摘要翻译： 提供诸如MMIC的半导体芯片。 半导体芯片具有：作为基板的Si半导体; 和低损耗传输线，并且可以容易地连接到其上将要安装半导体芯片的电路板，并且可以确保稳定的GND电位。 半导体芯片是倒装芯片半导体芯片，包括：Si衬底; 在所述基板的主表面上制造的集成电路; 形成在集成电路上方的电介质膜; 以及形成在电介质膜的上表面上的用于接地的导体膜。 该集成电路包括布线层，该布线层包括传输用于集成电路的信号的信号线。 信号线，电介质膜和导体膜构成微带线。

公开(公告)号：US20090091491A1

公开(公告)日：2009-04-09

申请号：US12237697

申请日：2008-09-25

申请人： Shinji UJITA ,  Takeshi FUKUDA

发明人： Shinji UJITA ,  Takeshi FUKUDA

IPC分类号： G01S13/00 ,  H04B1/00

CPC分类号： H03D7/165 ,  H04B2201/70715

摘要： Provided is a receiving device that is used for a spread spectrum radar apparatus, receives a spectrum-spread signal, and obtains a precise radar spectrum, and includes: a despreading unit that (i) generates first and second despread signals that are generated by despreading a reception signal using a pseudo-noise code, the second despread signal passing through a transmission line carrying a current having a current value identical to a current value of a current carried by a transmission line through which the first despread signal passes, and (ii) includes a first transistor pair including first and second transistors having an identical characteristic, the first transistor outputting the first despread signal, and the second transistor outputting the second despread signal; and a quadrature demodulating unit that generates an in-phase signal and a quadrature signal by quadrature-demodulating the first despread signal and the second despread signal, respectively.

摘要翻译： 提供了一种用于扩频雷达装置的接收装置，接收频谱扩展信号并获得精确的雷达频谱，包括：解扩单元，其（i）产生通过解扩生成的第一和第二解扩信号 使用伪噪声码的接收信号，所述第二解扩信号通过承载具有与由所述第一解扩信号通过的传输线承载的电流的当前值相同的电流值的电流的传输线，以及（ii ）包括第一晶体管对，其包括具有相同特性的第一和第二晶体管，第一晶体管输出第一解扩信号，第二晶体管输出第二解扩信号; 以及正交解调单元，其分别通过对第一解扩展信号和第二解扩信号进行正交解调来生成同相信号和正交信号。