公开(公告)号：US20110291271A1

公开(公告)日：2011-12-01

申请号：US13206987

申请日：2011-08-10

申请人： Hiroyuki SAKAI ,  Takeshi FUKUDA ,  Shinji UJITA ,  Yasufumi KAWAI

发明人： Hiroyuki SAKAI ,  Takeshi FUKUDA ,  Shinji UJITA ,  Yasufumi KAWAI

IPC分类号： H01L23/48 ,  H01L21/283

CPC分类号： H01L23/5222 ,  H01L23/3114 ,  H01L23/5221 ,  H01L23/5225 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/061 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/141 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/20752 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01P3/085 ,  H01P11/003 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A semiconductor chip such as an MMIC is provided. The semiconductor chip has: a Si semiconductor as a substrate; and a low-loss transmission line, and can be easily connected to a circuit board on which the semiconductor chip is to be mounted and can ensure a stable GND potential. The semiconductor chip is a flip-chip semiconductor chip, and includes: a Si substrate; an integrated circuit manufactured on a main surface of the substrate; a dielectric film formed above the integrated circuit; and a conductor film for grounding formed on an upper surface of the dielectric film. The integrated circuit includes a wiring layer including a signal line which transmits signals for the integrated circuit. The signal line, the dielectric film, and the conductor film constitute a microstrip line.

摘要翻译： 提供诸如MMIC的半导体芯片。 半导体芯片具有：作为基板的Si半导体; 和低损耗传输线，并且可以容易地连接到其上将要安装半导体芯片的电路板，并且可以确保稳定的GND电位。 半导体芯片是倒装芯片半导体芯片，包括：Si衬底; 在所述基板的主表面上制造的集成电路; 形成在集成电路上方的电介质膜; 以及形成在电介质膜的上表面上的用于接地的导体膜。 该集成电路包括布线层，该布线层包括传输用于集成电路的信号的信号线。 信号线，电介质膜和导体膜构成微带线。

公开(公告)号：US08492895B2

公开(公告)日：2013-07-23

申请号：US13206987

申请日：2011-08-10

申请人： Hiroyuki Sakai ,  Takeshi Fukuda ,  Shinji Ujita ,  Yasufumi Kawai

发明人： Hiroyuki Sakai ,  Takeshi Fukuda ,  Shinji Ujita ,  Yasufumi Kawai

IPC分类号： H01L23/48 ,  H01L21/283

CPC分类号： H01L23/5222 ,  H01L23/3114 ,  H01L23/5221 ,  H01L23/5225 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/061 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/141 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/20752 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01P3/085 ,  H01P11/003 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A semiconductor chip such as an MMIC is provided. The semiconductor chip has: a Si semiconductor as a substrate; and a low-loss transmission line, and can be easily connected to a circuit board on which the semiconductor chip is to be mounted and can ensure a stable GND potential. The semiconductor chip is a flip-chip semiconductor chip, and includes: a Si substrate; an integrated circuit manufactured on a main surface of the substrate; a dielectric film formed above the integrated circuit; and a conductor film for grounding formed on an upper surface of the dielectric film. The integrated circuit includes a wiring layer including a signal line which transmits signals for the integrated circuit. The signal line, the dielectric film, and the conductor film constitute a microstrip line.

摘要翻译： 提供诸如MMIC的半导体芯片。 半导体芯片具有：作为基板的Si半导体; 和低损耗传输线，并且可以容易地连接到其上将要安装半导体芯片的电路板，并且可以确保稳定的GND电位。 半导体芯片是倒装芯片半导体芯片，包括：Si衬底; 在所述基板的主表面上制造的集成电路; 形成在集成电路上方的电介质膜; 以及形成在电介质膜的上表面上的用于接地的导体膜。 该集成电路包括布线层，该布线层包括传输用于集成电路的信号的信号线。 信号线，电介质膜和导体膜构成微带线。

公开(公告)号：US07898469B2

公开(公告)日：2011-03-01

申请号：US12237697

申请日：2008-09-25

申请人： Shinji Ujita ,  Takeshi Fukuda

发明人： Shinji Ujita ,  Takeshi Fukuda

IPC分类号： G01S7/285 ,  G01S13/00

CPC分类号： H03D7/165 ,  H04B2201/70715

摘要： Provided is a receiving device that is used for a spread spectrum radar apparatus, receives a spectrum-spread signal, and obtains a precise radar spectrum, and includes: a despreading unit that (i) generates first and second despread signals that are generated by despreading a reception signal using a pseudo-noise code, the second despread signal passing through a transmission line carrying a current having a current value identical to a current value of a current carried by a transmission line through which the first despread signal passes, and (ii) includes a first transistor pair including first and second transistors having an identical characteristic, the first transistor outputting the first despread signal, and the second transistor outputting the second despread signal; and a quadrature demodulating unit that generates an in-phase signal and a quadrature signal by quadrature-demodulating the first despread signal and the second despread signal, respectively.

摘要翻译： 提供了一种用于扩频雷达装置的接收装置，接收频谱扩展信号并获得精确的雷达频谱，包括：解扩单元，其（i）产生通过解扩生成的第一和第二解扩信号 使用伪噪声码的接收信号，所述第二解扩信号通过承载具有与由所述第一解扩信号通过的传输线承载的电流的当前值相同的电流值的电流的传输线，以及（ii ）包括第一晶体管对，其包括具有相同特性的第一和第二晶体管，第一晶体管输出第一解扩信号，第二晶体管输出第二解扩信号; 以及正交解调单元，其分别通过对第一解扩展信号和第二解扩信号进行正交解调来生成同相信号和正交信号。

公开(公告)号：US20090091491A1

公开(公告)日：2009-04-09

申请号：US12237697

申请日：2008-09-25

申请人： Shinji UJITA ,  Takeshi FUKUDA

发明人： Shinji UJITA ,  Takeshi FUKUDA

IPC分类号： G01S13/00 ,  H04B1/00

CPC分类号： H03D7/165 ,  H04B2201/70715

摘要： Provided is a receiving device that is used for a spread spectrum radar apparatus, receives a spectrum-spread signal, and obtains a precise radar spectrum, and includes: a despreading unit that (i) generates first and second despread signals that are generated by despreading a reception signal using a pseudo-noise code, the second despread signal passing through a transmission line carrying a current having a current value identical to a current value of a current carried by a transmission line through which the first despread signal passes, and (ii) includes a first transistor pair including first and second transistors having an identical characteristic, the first transistor outputting the first despread signal, and the second transistor outputting the second despread signal; and a quadrature demodulating unit that generates an in-phase signal and a quadrature signal by quadrature-demodulating the first despread signal and the second despread signal, respectively.

摘要翻译： 提供了一种用于扩频雷达装置的接收装置，接收频谱扩展信号并获得精确的雷达频谱，包括：解扩单元，其（i）产生通过解扩生成的第一和第二解扩信号 使用伪噪声码的接收信号，所述第二解扩信号通过承载具有与由所述第一解扩信号通过的传输线承载的电流的当前值相同的电流值的电流的传输线，以及（ii ）包括第一晶体管对，其包括具有相同特性的第一和第二晶体管，第一晶体管输出第一解扩信号，第二晶体管输出第二解扩信号; 以及正交解调单元，其分别通过对第一解扩展信号和第二解扩信号进行正交解调来生成同相信号和正交信号。

公开(公告)号：US08575731B2

公开(公告)日：2013-11-05

申请号：US12999472

申请日：2009-06-15

申请人： Shinji Ujita ,  Takeshi Fukuda ,  Hiroyuki Sakai

发明人： Shinji Ujita ,  Takeshi Fukuda ,  Hiroyuki Sakai

IPC分类号： H01L23/58

CPC分类号： H01P5/10 ,  H01L23/64 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor integrated circuit device with a balun which is formed above a conductive semiconductor substrate and which includes a dielectric film, an unbalanced line for transmitting an unbalanced signal, and balanced lines for transmitting a balanced signal. The unbalanced line is placed opposite to the balanced lines via a nano-composite film that is a region of the dielectric film. The nano-composite film, interposed between the unbalanced line and the balanced lines, has a relative permittivity higher than that of other regions of the dielectric film. This allows suppression of electromagnetic coupling of transmission lines or passive elements other than the balun, thereby providing a semiconductor device with a wide-band and small-size balun.

摘要翻译： 一种具有平衡 - 不平衡转换器的半导体集成电路器件，其形成在导电半导体衬底之上，并且包括电介质膜，用于传输不平衡信号的不平衡线以及用于传输平衡信号的平衡线。 不平衡线通过作为电介质膜的区域的纳米复合膜与平衡线相对放置。 夹在不平衡线和平衡线之间的纳米复合膜的介电常数比电介质膜的其它区域的介电常数高。 这允许抑制除了平衡 - 不平衡变换器之外的传输线或无源元件的电磁耦合，从而提供具有宽带和小尺寸平衡 - 不平衡转换器的半导体器件。

公开(公告)号：US20110089543A1

公开(公告)日：2011-04-21

申请号：US12999472

申请日：2009-06-15

申请人： Shinji Ujita ,  Takeshi Fukuda ,  Hiroyuki Sakai

发明人： Shinji Ujita ,  Takeshi Fukuda ,  Hiroyuki Sakai

IPC分类号： H01L23/58

CPC分类号： H01P5/10 ,  H01L23/64 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor integrated circuit device with a balun which is formed above a conductive semiconductor substrate and which includes a dielectric film, an unbalanced line for transmitting an unbalanced signal, and balanced lines for transmitting a balanced signal. The unbalanced line is placed opposite to the balanced lines via a nano-composite film that is a region of the dielectric film. The nano-composite film, interposed between the unbalanced line and the balanced lines, has a relative permittivity higher than that of other regions of the dielectric film. This allows suppression of electromagnetic coupling of transmission lines or passive elements other than the balun, thereby providing a semiconductor device with a wide-band and small-size balun.

摘要翻译： 一种具有平衡 - 不平衡转换器的半导体集成电路器件，其形成在导电半导体衬底之上，并且包括电介质膜，用于传输不平衡信号的不平衡线以及用于传输平衡信号的平衡线。 不平衡线通过作为电介质膜的区域的纳米复合膜与平衡线相对放置。 夹在不平衡线和平衡线之间的纳米复合膜的介电常数比电介质膜的其它区域的介电常数高。 这允许抑制除了平衡 - 不平衡变换器之外的传输线或无源元件的电磁耦合，从而提供具有宽带和小尺寸平衡 - 不平衡转换器的半导体器件。