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33 条记录 (耗时 0.017 秒)

    SOLAR CELL
    1.
    发明申请
    SOLAR CELL 有权
    太阳能电池

    公开(公告)号：US20120211073A1

    公开(公告)日：2012-08-23

    申请号：US13460525

    申请日：2012-04-30

    申请人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akio MATSUSHITA

    发明人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akio MATSUSHITA

    IPC分类号： H01L31/0264 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/1884 ,  H01L31/035281 ,  H01L31/0735 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

    摘要翻译： 制造太阳能电池的方法包括以下步骤：在石墨基板的表面上形成非晶碳层，AlN层和第一n型氮化物半导体层，在第一n上形成具有多个开口的掩模层 型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。

    MAGNETIC TUNNEL JUNCTION DEVICE
    2.
    发明申请
    MAGNETIC TUNNEL JUNCTION DEVICE 有权
    磁铁隧道连接装置

    公开(公告)号：US20120205762A1

    公开(公告)日：2012-08-16

    申请号：US13454696

    申请日：2012-04-24

    申请人： Nozomu MATSUKAWA ,  Akihiro ODAGAWA ,  Akio MATSUSHITA

    发明人： Nozomu MATSUKAWA ,  Akihiro ODAGAWA ,  Akio MATSUSHITA

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L43/10

    摘要： The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.

    摘要翻译： 本发明的磁性隧道结装置包括第一铁磁层，第二铁磁层，形成在第一铁磁层和第二铁磁层之间的绝缘层。 绝缘层由添加氟的MgO构成。 绝缘层中的氟含量为0.00487at。 ％以上0.15080。 ％ 或更少。 该器件虽然包括MgO绝缘层，但是对于包括MgO绝缘层的常规器件，具有优异的磁阻性能。 氟含量优选为0.00487at。 ％以上0.05256。 ％ 或更少。

    Process for preparing 3-substituted thiophene
    3.
    发明申请
    Process for preparing 3-substituted thiophene 审中-公开
    制备3-取代噻吩的方法

    公开(公告)号：US20090137822A1

    公开(公告)日：2009-05-28

    申请号：US11920568

    申请日：2006-05-16

    申请人： Akio Matsushita ,  Kiyotaka Yoshii ,  Mizuho Oda ,  Masayoshi Oue ,  Shuji Yamada

    发明人： Akio Matsushita ,  Kiyotaka Yoshii ,  Mizuho Oda ,  Masayoshi Oue ,  Shuji Yamada

    IPC分类号： C07D333/38 ,  C07D333/22 ,  C07D333/16

    CPC分类号： C07D333/38 ,  C07D333/22

    摘要： The present invention relates to a process for preparing a 3-substituted thiophene represented by the formula (2): wherein R represents a cyano group, a formyl group, a carboxyl group, a hydrocarbyloxycarbonyl group which may have a substituent(s) or an acyl group which may have a substituent(s), which comprises reacting a vinyl compound represented by the formula (1): RCH═CHY  (1) wherein R has the same meaning as defined above, and Y represents a leaving group, and an α-mercaptoacetaldehyde or a multimer thereof.

    摘要翻译： 本发明涉及一种由式（2）表示的3-取代噻吩的制备方法：其中R表示氰基，甲酰基，羧基，可具有取代基的烃氧基羰基或 可以具有取代基的酰基，其包括使由式（1）表示的乙烯基化合物：<？in-line-formula description =“In-line formula”end =“lead”→RCH-CHY （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R具有与上述相同的含义，Y表示离去基团，而α-巯基乙醛或多聚体 其中。

    Preparation of 3-oxy-5-oxo-6-heptenoic acid derivatives
    5.
    发明授权
    Preparation of 3-oxy-5-oxo-6-heptenoic acid derivatives 失效
    3-氧基-5-氧代-6-庚烯酸衍生物的制备

    公开(公告)号：US5677455A

    公开(公告)日：1997-10-14

    申请号：US524045

    申请日：1995-09-06

    申请人： Katsumasa Harada ,  Akio Matsushita ,  Yasuhiro Kawachi ,  Hiroshi Sasaki

    发明人： Katsumasa Harada ,  Akio Matsushita ,  Yasuhiro Kawachi ,  Hiroshi Sasaki

    IPC分类号： C07F7/18 ,  C07F7/02 ,  C07D213/30

    CPC分类号： C07F7/1852 ,  C07F7/1856 ,  C07F7/1892

    摘要： Methyl (3R,6E)-3-�(tert-butyldimethylsilyl)oxy!-7-�2',6'-diisopropyl-4'-(4"-fluorophenyl)-5'-(methoxymethyl)pyridin-3'-yl!-5-oxy-6-heptenoate or other 3-oxy-5-oxo-6-heptenoic acid derivative is prepared by the reaction of an aromatic aldehyde and an oxyglutaric acid derivative in an aliphatic alcohol containing a small amount of water in the presence of an alkali metal carbonate or hydrogen carbonate.

    摘要翻译： 将（3R，6E）-3 - [（叔丁基二甲基甲硅烷基）氧基] -7- [2'，6'-二异丙基-4' - （4“ - 氟苯基）-5' - （甲氧基甲基） - 基] -5-氧基-6-庚烯酸乙酯或其它3-氧基-5-氧代-6-庚烯酸衍生物通过芳族醛和羟基戊二酸衍生物在含少量水的脂族醇中的反应来制备 在碱金属碳酸盐或碳酸氢盐存在下进行。

    Triazine derivative, process for preparing the same and herbicide using the same
    6.
    发明授权
    Triazine derivative, process for preparing the same and herbicide using the same 失效
    三嗪衍生物，其制备方法和使用其的除草剂

    公开(公告)号：US5529977A

    公开(公告)日：1996-06-25

    申请号：US326830

    申请日：1994-10-21

    申请人： Katsumasa Harada ,  Takaaki Abe ,  Yuji Akiyoshi ,  Akio Matsushita ,  Mikio Kojima ,  Ikuo Shiraishi ,  Kaoru Yamamoto ,  Takashi Hayama

    发明人： Katsumasa Harada ,  Takaaki Abe ,  Yuji Akiyoshi ,  Akio Matsushita ,  Mikio Kojima ,  Ikuo Shiraishi ,  Kaoru Yamamoto ,  Takashi Hayama

    IPC分类号： A01N43/54 ,  A01N43/66 ,  C07D239/60 ,  C07D251/30 ,  C07D251/38 ,  C07D521/00 ,  C07D251/34 ,  C07D251/16 ,  C07D403/12

    CPC分类号： C07D231/12 ,  A01N43/54 ,  A01N43/66 ,  C07D233/56 ,  C07D239/60 ,  C07D249/08 ,  C07D251/30 ,  C07D251/38

    摘要： Disclosed are a pyrimidine or triazine compound represented by the following formula (I): ##STR1## wherein R.sup.1 represents cyano group, a halogen atom, hydroxy group or --O--R.sup.7 where R.sup.7 represents a lower alkyl group, a lower alkenyl group, a lower alkynyl group, a halo-lower alkyl group or a cyano-lower alkyl group; R.sup.2 represents hydrogen atom or a lower alkyl group; R.sup.3 represents hydrogen atom or a lower alkyl group; R.sup.4 represents a 1-imidazolyl group, --NHSO.sub.2 --R.sup.8 where R.sup.8 represents a lower alkyl group or a phenyl group which may have a substituent, hydroxy group, a lower alkoxy group or a benzyloxy group when Z is nitrogen atom; or a 1-imidazolyl group, --NHSO.sub.2 --R.sup.8 where R.sup.8 has the same meaning as defined above, hydroxy group, OK, a lower alkoxy group which may have a substituent, a lower alkenyloxy group, a lower alkynyloxy group, a cycloalkoxy group which may have a substituent, a phenoxy group, a benzyloxy group, a lower alkylthio group, a phenylthio group or an alkylsulfonylamino group when Z is --CH.dbd. group; R.sup.5 represents a lower alkoxy group; R.sup.6 represents a lower alkoxy group or a lower alkyl group; X represents oxygen atom or sulfur atom; and Z represents nitrogen atom or --CH.dbd. group.processes for preparing the same and a herbicide containing the same as an active ingredient(s).

    摘要翻译： 公开了由下式（I）表示的嘧啶或三嗪化合物：其中R 1表示氰基，卤素原子，羟基或-O-R 7，其中R 7表示低级烷基，低级烯基 基，低级炔基，卤代低级烷基或氰基 - 低级烷基; R2表示氢原子或低级烷基; R3表示氢原子或低级烷基; R 4表示当Z为氮原子时，可以具有取代基，羟基，低级烷氧基或苄氧基的低级烷基或苯基，-NHSO 2 -R 8， 或1-咪唑基，-NHSO 2 -R 8，其中R8具有与上述相同的含义，羟基，OK，可具有取代基的低级烷氧基，低级链烯氧基，低级炔氧基，环烷氧基 当Z为-CH =基团时，可具有取代基，苯氧基，苄氧基，低级烷硫基，苯硫基或烷基磺酰基氨基; R5代表低级烷氧基; R6代表低级烷氧基或低级烷基; X表示氧原子或硫原子; Z表示氮原子或-CH =基团。 其制备方法和含有其作为活性成分的除草剂。

    Process for preparation of 5-hydroxy-3-ketoester derivative and optically active substance thereof
    7.
    发明授权
    Process for preparation of 5-hydroxy-3-ketoester derivative and optically active substance thereof 失效
    5-羟基-3-酮酯衍生物及其光学活性物质的制备方法

    公开(公告)号：US5457225A

    公开(公告)日：1995-10-10

    申请号：US302342

    申请日：1994-09-07

    申请人： Nobuki Oguni ,  Masahiko Hayashi ,  Katsumasa Harada ,  Akio Matsushita

    发明人： Nobuki Oguni ,  Masahiko Hayashi ,  Katsumasa Harada ,  Akio Matsushita

    IPC分类号： C07C67/46 ,  C07C69/716 ,  C07C69/76 ,  C07C69/66

    CPC分类号： C07C69/716 ,  C07C67/46

    摘要： Disclosed is a process for the preparation of a 5-hydroxy-3-ketoester derivative of the formula: ##STR1## in which R.sup.1 represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heterocyclic group, and R.sup.2 represents an alkyl group or an aryl group, which comprises causing the reaction of an aldehyde compound of the formula R.sup.1 CHO in which R.sup.1 has the meanings as defined above and diketene in the presence of a metal compound selected from a titanium or aluminum compound having at least one group of --OR.sup.3 in which R.sup.3 represents an alkyl group or an aryl group. Further, a process for the preparation of an optically active substance of the 5-hydroxy-3-ketoester derivative causing the reaction of the above compounds in the presence of the metal compound and optically active Schiff base or a complex compound obtained by reacting the metal compound with the optically active Schiff base, also is disclosed.

    摘要翻译： 公开了制备下式的5-羟基-3-酮酯衍生物的方法：其中R 1表示烷基，烯基，炔基，芳基或杂环基，R 2 表示烷基或芳基，其包括在选自具有至少具有上述含义的钛或铝化合物的金属化合物的存在下使式R 1 CHO的醛化合物与其中R 1具有如上所定义的二烯酮反应 一组-OR 3，其中R 3表示烷基或芳基。 此外，制备5-羟基-3-酮酯衍生物的光学活性物质的方法，其导致上述化合物在金属化合物和光学活性席夫碱存在下的反应或通过使金属 与光学活性席夫碱的化合物也被公开。

    Solar cell
    9.
    发明授权
    Solar cell 有权
    太阳能电池

    公开(公告)号：US08420431B2

    公开(公告)日：2013-04-16

    申请号：US13460525

    申请日：2012-04-30

    申请人： Nobuaki Nagao ,  Takahiro Hamada ,  Akio Matsushita

    发明人： Nobuaki Nagao ,  Takahiro Hamada ,  Akio Matsushita

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1884 ,  H01L31/035281 ,  H01L31/0735 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

    摘要翻译： 制造太阳能电池的方法包括以下步骤：在石墨基板的表面上形成非晶碳层，AlN层和第一n型氮化物半导体层，在第一n上形成具有多个开口的掩模层 型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。