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    Solar cell and method for fabricating the same
    2.
    发明授权
    Solar cell and method for fabricating the same 有权
    太阳能电池及其制造方法

    公开(公告)号：US08735716B2

    公开(公告)日：2014-05-27

    申请号：US13547939

    申请日：2012-07-12

    申请人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

    发明人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

    IPC分类号： H01L31/0392 ,  H01L21/02 ,  C30B25/18 ,  C23C16/30

    CPC分类号： H01L31/0392 ,  C23C16/303 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

    摘要翻译： 太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层 形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。 无定形碳层通过氧化石墨基材的表面而获得。

    Light-emitting diode
    3.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US08193548B2

    公开(公告)日：2012-06-05

    申请号：US13284294

    申请日：2011-10-28

    申请人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    发明人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L2933/0083 ,  H01L2933/0091

    摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

    SOLAR CELL AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    SOLAR CELL AND METHOD FOR FABRICATING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号：US20110203651A1

    公开(公告)日：2011-08-25

    申请号：US13097860

    申请日：2011-04-29

    申请人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akihiro ITOH

    发明人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akihiro ITOH

    IPC分类号： H01L31/06 ,  H01L31/0304

    CPC分类号： H01L31/0392 ,  C23C16/303 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

    摘要翻译： 太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层 形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。 无定形碳层通过氧化石墨基材的表面而获得。

    RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE
    6.
    发明申请
    RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE 审中-公开
    含有分支的聚羟基苯乙烯的抗静电膜形成组合物

    公开(公告)号：US20100291483A1

    公开(公告)日：2010-11-18

    申请号：US12676720

    申请日：2008-09-18

    申请人： Takahiro Hamada ,  Noriaki Fujitani

    发明人： Takahiro Hamada ,  Noriaki Fujitani

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/11 ,  G03F7/0382 ,  G03F7/091

    摘要： There is provided a resist underlayer film which does not intermix with a photoresist coated and formed as the overlying layer and which dissolves in an alkaline developer and can be developed and removed at the same time as the photoresist; and a resist underlayer film-forming composition for forming such a resist underlayer film. A resist underlayer film-forming composition for use in a lithographic process for manufacturing a semiconductor device, containing: (A) a branched polyhydroxystyrene in which an ethylene repeating unit on a polyhydroxystyrene moiety is bonded to a benzene ring on a different polyhydroxystyrene moiety; (B) a compound having at least two vinyl ether groups; and (C) a photoacid generator.

    摘要翻译： 提供了抗蚀剂下层膜，其不与作为覆盖层涂布并形成的光致抗蚀剂混合，并溶解在碱性显影剂中，并可与光致抗蚀剂同时显影和除去; 和用于形成这种抗蚀剂下层膜的抗蚀剂下层膜形成组合物。 一种用于制造半导体器件的光刻工艺中的抗蚀剂下层膜形成组合物，其包含：（A）多羟基苯乙烯部分上的乙烯重复单元与不同的聚羟基苯乙烯部分上的苯环键合的支链多羟基苯乙烯; （B）具有至少两个乙烯基醚基团的化合物; 和（C）光致酸产生剂。

    Chain drive system
    7.
    发明授权
    Chain drive system 有权
    链驱动系统

    公开(公告)号：US07572200B2

    公开(公告)日：2009-08-11

    申请号：US10914276

    申请日：2004-08-10

    申请人： Takashi Murata ,  Takuya Hirata ,  Makoto Kano ,  Yutaka Mabuchi ,  Takahiro Hamada ,  Masashi Yamaguchi

    发明人： Takashi Murata ,  Takuya Hirata ,  Makoto Kano ,  Yutaka Mabuchi ,  Takahiro Hamada ,  Masashi Yamaguchi

    IPC分类号： F16G1/28 ,  F16G13/02 ,  F16H7/18

    CPC分类号： F16H57/041 ,  C10M2207/289 ,  C10N2230/06 ,  C10N2240/10 ,  C10N2280/00 ,  F16C5/00 ,  F16C9/04 ,  F16C33/16 ,  F16G13/06

    摘要： A chain drive system includes a drive sprocket, a driven sprocket and a chain looped over the drive sprocket and the driven sprocket. The chain and the sprocket having respective sliding surfaces slidable relative to each other in the presence of lubricating oil, and any adjacent chain components of the chain having respective sliding surfaces slidable relative to each other in the presence of lubricating oil. At least one of the sliding surfaces between the chain and the sprocket and at least one of the sliding surfaces between any adjacent chain components have hard carbon coatings formed on base portions thereof. Each of the hard carbon coatings has a hydrogen content of 10 atomic % or less.

    摘要翻译： 链传动系统包括驱动链轮，从动链轮和环绕在驱动链轮和从动链轮上的链。 链条和链轮具有各自的滑动表面，其在润滑油的存在下可相对于彼此滑动，并且链条的任何相邻的链条部件具有相对于彼此在润滑油的存在下相对滑动的滑动表面。 链条和链轮之间的至少一个滑动表面以及任何相邻的链条部件之间的至少一个滑动表面具有形成在其基部上的硬碳涂层。 每个硬碳涂层的氢含量为10原子％以下。