公开(公告)号：US06454819B1

公开(公告)日：2002-09-24

申请号：US09484064

申请日：2000-01-18

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Masayuki Motonari ,  Masayuki Hattori ,  Akira Iio

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Masayuki Motonari ,  Masayuki Hattori ,  Akira Iio

IPC分类号： C09K314

CPC分类号： C09K3/1463 ,  C08G83/001 ,  C08J3/128 ,  C08K3/36 ,  C08K5/057 ,  C08K2201/013 ,  C09G1/02 ,  C09K3/1436 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

摘要： A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.

摘要翻译： 一种用于化学机械抛光晶片上的工作薄膜的方法，该方法需要用含水和复合颗粒的水性分散体进行化学机械抛光，所述复合颗粒含有具有硅化合物部分或部分和 在聚合物颗粒上直接或间接形成的金属化合物部分或部分。

公开(公告)号：US06375545B1

公开(公告)日：2002-04-23

申请号：US09484252

申请日：2000-01-18

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Masayuki Motonari

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Masayuki Motonari

IPC分类号： B24B100

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  Y10S977/775 ,  Y10S977/888

摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.

摘要翻译： 本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造 半导体器件使用它们。 本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。 另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。 聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。 无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。 将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。 并且通过使用CMP浆料制造半导体器件。

公开(公告)号：US06740590B1

公开(公告)日：2004-05-25

申请号：US09531163

申请日：2000-03-17

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori

IPC分类号： H01L21302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1436 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.

摘要翻译： 本发明的目的是提供一种水性分散体，其可以为包括电子材料，磁性材料，光学材料和抛光材料在内的广泛用途提供所需的性能，并提供用于化学机械抛光的水性分散体（CMP浆料 ），其提供足够的抛光速率，而不会在抛光表面中产生划痕。 本发明的另一个目的是提供一种使用CMP浆料制造半导体器件的方法，所述CMP浆料可以在抛光期间控制由划痕等引起的逐渐侵蚀，并且可以实现工作膜的有效平坦化，并提供一种方法 形成嵌入式布线。 本发明的水性分散体或CMP浆料含有由热塑性树脂等构成的聚合物颗粒和由氧化铝，二氧化硅等制成的无机颗粒，其中聚合物颗粒和无机颗粒的ζ电位具有相反的标志， 它们通过静电力结合以形成作为复合颗粒的聚集体。 聚集体用均化器进行超声波照射或剪切应力，得到更均匀分散的复合颗粒。

公开(公告)号：US06409780B1

公开(公告)日：2002-06-25

申请号：US09482937

申请日：2000-01-14

申请人： Hiroyuki Yano ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Kiyonobu Kubota

发明人： Hiroyuki Yano ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Kiyonobu Kubota

IPC分类号： C09K314

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.

摘要翻译： 提供含水固体物质，其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得，提供了通过使用水 - 负载固体物质，以及使用上述浆料制造半导体器件的方法。 所述含水固体物质的体积密度为0.3〜3g / cm 3，制粒时的平均粒径为0.5〜100mmφ的范围。 用于抛光的所述浆料由含水固体物质制成，其在分散在水中的平均粒径在0.05-1.0μm的范围内。

公开(公告)号：US06722964B2

公开(公告)日：2004-04-20

申请号：US09824644

申请日：2001-04-04

申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

IPC分类号： B24B100

CPC分类号： B24B37/345 ,  B24B9/065 ,  B24B37/12 ,  H01L21/67046

摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

摘要翻译： 抛光装置和方法具有将形成在基板上的膜的表面抛光至平面镜面的功能，以及抛光沉积在基板的外周部分上的不需要的金属膜如铜膜的功能，以去除这种不必要的金属 电影。 抛光装置包括表面抛光机构，其包括具有抛光表面的抛光台和用于保持基板的顶环，并将基板压靠在抛光台的抛光表面上，从而抛光基板的表面，以及外周抛光 用于抛光衬底的外周部分的机构。

公开(公告)号：US5876273A

公开(公告)日：1999-03-02

申请号：US625291

申请日：1996-04-01

申请人： Hiroyuki Yano ,  Katsuya Okumura ,  Norio Kimura ,  Tomoyuki Yahiro ,  Hozumi Yasuda

发明人： Hiroyuki Yano ,  Katsuya Okumura ,  Norio Kimura ,  Tomoyuki Yahiro ,  Hozumi Yasuda

IPC分类号： B24B37/30 ,  B24B29/02

CPC分类号： B24B37/30

摘要： A polishing apparatus is provided which improves uniformity across the surface of a polished wafer. The apparatus includes a wafer carrier, a guide ring coupled to a lower portion of the wafer carrier, a circular plate coupled to a first inner circumference portion of the guide ring distant from the wafer carrier, and a cavity, formed within an area bounded by the lower portion of the wafer carrier, an inner circumference of the circular plate, and a second inner circumference portion of the guide ring between the circular plate and the lower portion of the wafer carrier, the circular plate holding the wafer to be polished in the cavity.

摘要翻译： 提供了一种改善抛光晶片表面均匀性的抛光装置。 该装置包括晶片载体，联接到晶片载体的下部的引导环，耦合到远离晶片载体的引导环的第一内周部分的圆形板，以及形成在由 晶片载体的下部，圆形板的内圆周和导向环的第二内周部分在圆形板和晶片载体的下部之间，圆形板将待抛光的晶片保持在 腔。

公开(公告)号：US5534106A

公开(公告)日：1996-07-09

申请号：US280818

申请日：1994-07-26

申请人： William J. Cote ,  James G. Ryan ,  Katsuya Okumura ,  Hiroyuki Yano

发明人： William J. Cote ,  James G. Ryan ,  Katsuya Okumura ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  B24B37/04 ,  B24D13/14 ,  B24B37/00 ,  H01L21/00

CPC分类号： B24B37/26 ,  B24B37/04 ,  Y10S451/921

摘要： The invention is directed to a semi-conductor wafer processing machine including an arm having a wafer carrier disposed at one end. The wafer carrier is rotatable with the rotating motion imparted to a semi-conductor wafer held thereon. In first embodiment, the machine further includes a rotatable polishing pad having an upper surface divided into a plurality of wedge-shaped sections, including an abrasion section and a polishing section. The abrasion section has a relatively rough texture and the polishing section has a relatively fine texture as compared to each other. In an alternative embodiment, the pad includes an underlayer and surface layer. The surface layer includes two sections of differing hardness, both of which are harder than the underlayer. Alternatively, the surface layer may include one relatively hard section, and the underlayer may include two sections, one of which has the same hardness as the surface layer and the other of which is softer than the surface layer. In a further embodiment, the polishing pad has an annular shape, and a chemical processing table is disposed within the open central region of the pad.

摘要翻译： 本发明涉及一种半导体晶片加工机械，其包括具有设置在其一端的晶片载体的臂。 晶片载体可转动，转动运动被施加到保持在其上的半导体晶片。 在第一实施例中，机器还包括可旋转的抛光垫，其具有被分成多个楔形部分的上表面，该楔形部分包括磨损部分和抛光部分。 磨损部分具有相对粗糙的结构，并且抛光部分具有相对于彼此相对较细的结构。 在替代实施例中，垫包括底层和表面层。 表面层包括两个不同于硬度的部分，它们都比底层更硬。 或者，表面层可以包括一个相对硬的部分，并且底层可以包括两个部分，其中一个部分具有与表面层相同的硬度，而另一个部分比表面层更软。 在另一实施例中，抛光垫具有环形形状，并且化学处理台设置在垫的开放中心区域内。

公开(公告)号：US07108589B2

公开(公告)日：2006-09-19

申请号：US11187944

申请日：2005-07-25

申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

IPC分类号： B24B7/00

CPC分类号： B24B37/345 ,  B24B9/065 ,  B24B37/12 ,  H01L21/67046

摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

摘要翻译： 抛光装置和方法具有将形成在基板上的膜的表面抛光至平面镜面的功能，以及抛光沉积在基板的外周部分上的不需要的金属膜如铜膜的功能，以去除这种不必要的金属 电影。 抛光装置包括表面抛光机构，其包括具有抛光表面的抛光台和用于保持基板的顶环，并将基板压靠在抛光台的抛光表面上，从而抛光基板的表面，以及外周抛光 用于抛光衬底的外周部分的机构。

公开(公告)号：US06723572B2

公开(公告)日：2004-04-20

申请号：US10139278

申请日：2002-05-07

申请人： Hiroyuki Yano ,  Katsuya Okumura

发明人： Hiroyuki Yano ,  Katsuya Okumura

IPC分类号： H01L2166

CPC分类号： H01L22/26 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A to-be-polished surface of a semiconductor workpiece is polished to a target shape, using a CMP tool. The to-be-polished surface is a surface of a metal provided on an insulating film having trenches. A shape of a polished surface of the semiconductor workpiece is monitored to determine if a metal residue exists outside of the trenches on the polished surface while the semiconductor workpiece is set in the CMP tool, using a monitor. The monitor has a sensor that obtains a two-dimensional image of the to-be-polished surface. The CMP tool is controlled by feedback based on a result of monitoring to determine if the metal residue exists, using a controller.

摘要翻译： 使用CMP工具将半导体工件的待抛光表面抛光至目标形状。 被抛光表面是设置在具有沟槽的绝缘膜上的金属表面。 监测半导体工件的抛光表面的形状，以确定当使用监视器将半导体工件设置在CMP工具中时，金属残留物是否存在于抛光表面上的沟槽外部。 显示器具有获得被抛光表面的二维图像的传感器。 CMP工具由基于监测结果的反馈控制，以使用控制器确定是否存在金属残留物。

公开(公告)号：US06414499B2

公开(公告)日：2002-07-02

申请号：US09846372

申请日：2001-05-02

申请人： Hiroyuki Yano ,  Katsuya Okumura

发明人： Hiroyuki Yano ,  Katsuya Okumura

IPC分类号： G02R31308

CPC分类号： H01L22/26 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： An equipment for manufacturing semiconductor devices, comprises a processing tool which processes a to-be-processed surface of a semiconductor workpiece to a target shape, a monitor which three-dimensionally monitors a shape of a processed surface of the semiconductor workpiece while the semiconductor workpiece is set in the processing tool, and a controller which controls the processing tool in a feedback manner on the basis of the shape of the processed surface monitored by the monitor. If the shape of the processed surface deviates from the target shape, the controller adjusts process conditions of the processing tool so that the target shape can be obtained.

摘要翻译： 一种用于制造半导体器件的设备，包括将半导体工件的待处理表面处理为目标形状的处理工具，在半导体工件的三维监视半导体工件的加工表面的形状的监视器 设置在处理工具中，以及控制器，其基于由监视器监视的处理表面的形状以反馈方式控制处理工具。 如果处理后的表面的形状偏离目标形状，则控制器调整加工工具的工艺条件，从而可以获得目标形状。