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    Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
    4.
    发明授权
    Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device 失效
    具有III族氮化物化合物并且能够控制发光颜色的半导体器件，以及包括这种器件的平面显示器

    公开(公告)号：US5650641A

    公开(公告)日：1997-07-22

    申请号：US522110

    申请日：1995-08-31

    申请人： Michinari Sassa ,  Masayoshi Koike ,  Katsuhide Manabe ,  Norikatsu Koide ,  Hisaki Kato ,  Naoki Shibata ,  Makoto Asai ,  Shinya Asami

    发明人： Michinari Sassa ,  Masayoshi Koike ,  Katsuhide Manabe ,  Norikatsu Koide ,  Hisaki Kato ,  Naoki Shibata ,  Makoto Asai ,  Shinya Asami

    IPC分类号： H01L33/02 ,  H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/325 ,  H01L33/025

    摘要： A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times.10.sup.19 /cm.sup.3 into the emission layer (5) enables red light emission.

    摘要翻译： 适用于多色平板显示器的发光半导体器件（100）包括蓝宝石衬底（1），AlN缓冲层（2），掺杂硅（Si）的GaN n +层（3） 载流子（n型）浓度，高载流子（n型）浓度的Si掺杂（Alx2Ga1-x2）y2In1-2Nn +层（4），锌（Zn）和掺杂Si的p型（Al x Ga 1 -x1）y1In1-y1N发射层（5）和Mg掺杂（Alx2Ga1-x2）y2In1-y2N p层（6）。 AlN层（2）具有500厚度。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 发射层（5）厚约0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×10 17 / cm 3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 通过这种结构获得绿色发光。 此外，仅向发射层（5）掺杂5×10 19 / cm 3的Zn使得能够发红光。

    Method for manufacturing a gallium nitride group compound semiconductor
    5.
    发明授权
    Method for manufacturing a gallium nitride group compound semiconductor 失效
    氮化镓基化合物半导体的制造方法

    公开(公告)号：US06984536B2

    公开(公告)日：2006-01-10

    申请号：US10052347

    申请日：2002-01-23

    申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

    发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

    IPC分类号： H01L21/20

    CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

    摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

    摘要翻译： 本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层 低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。

    Methods and devices using group III nitride compound semiconductor
    6.
    发明授权
    Methods and devices using group III nitride compound semiconductor 有权
    使用III族氮化物化合物半导体的方法和装置

    公开(公告)号：US06881651B2

    公开(公告)日：2005-04-19

    申请号：US10382647

    申请日：2003-03-07

    申请人： Norikatsu Koide ,  Hisaki Kato

    发明人： Norikatsu Koide ,  Hisaki Kato

    IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/323

    CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02647 ,  Y10S117/902 ,  Y10S438/932

    摘要： A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2 layer, and grows epitaxially on the SiO2 layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.

    摘要翻译： 在硅（Si）衬底的（111）面上以垂直于[...]的[1-10]轴方向上较长的条纹图案形成包含氧化硅（SiO 2） 110]轴方向。 然后，由通式Al 1-xy N（0 <= x <= 1）表示的III族氮化物化合物半导体 ，0 <= y <= 1，0 <= x + y <= 1）。 由通式Al 1-xy N表示的III族氮化物化合物半导体（0≤x≤1， 0 <= y <= 1，0 <= x + y <= 1）在未被SiO 2层覆盖的衬底暴露区域B上外延生长，并且在SiO 在区域B的横向方向上形成第二层。因此，可以获得没有位错的III族氮化物化合物半导体。

    Gallium nitride group compound semiconductor
    8.
    发明授权
    Gallium nitride group compound semiconductor 失效
    氮化镓族化合物半导体

    公开(公告)号：US06472690B1

    公开(公告)日：2002-10-29

    申请号：US09677789

    申请日：2000-10-02

    申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

    发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

    摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

    摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

    Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
    9.
    发明授权
    Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer 失效
    使用具有用于n层和/或i层的双层结构的氮化镓基化合物的发光半导体器件

    公开(公告)号：US5278433A

    公开(公告)日：1994-01-11

    申请号：US926022

    申请日：1992-08-07

    申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

    发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

    IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/32

    CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

    摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n.sup.+ -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i.sub.L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i.sub.H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

    摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。