公开(公告)号：US07226513B2

公开(公告)日：2007-06-05

申请号：US10645911

申请日：2003-08-22

申请人： Hisatsugu Kurita ,  Manabu Hirasawa ,  Hiromi Nagahama ,  Koji Izumome ,  Takao Ino ,  Jyunsei Yamabe ,  Naoya Hayamizu ,  Naoaki Sakurai

发明人： Hisatsugu Kurita ,  Manabu Hirasawa ,  Hiromi Nagahama ,  Koji Izumome ,  Takao Ino ,  Jyunsei Yamabe ,  Naoya Hayamizu ,  Naoaki Sakurai

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  B08B3/08 ,  B08B2203/005 ,  C11D7/02 ,  C11D7/08 ,  C11D11/0047 ,  Y10S438/906

摘要： This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/μm is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon wafer with ozonized water and a process of cleaning said oxidized silicon wafer with hydrofluoric acid. Consequently, it is possible to remove surface adhering pollutant such as particles and metallic foreign matter with the surface structure of silicon wafer flattened up to atomic level by annealing maintained.

摘要翻译： 本发明提供了一种用于获得硅晶片的硅晶片的清洁方法，其中，在功率谱密度方面，其空间频率为20 /μm的微观粗糙度为0.3至1.5nm 3，通过将工艺 用臭氧化水氧化硅晶片和用氢氟酸清洗所述氧化硅晶片的工艺。 因此，通过退火维持，将硅晶片的表面结构平坦化为原子级，可以除去表面附着污染物如颗粒和金属异物。

公开(公告)号：US20050170664A1

公开(公告)日：2005-08-04

申请号：US11038180

申请日：2005-01-21

申请人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

发明人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

IPC分类号： H01L21/20 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  C30B1/00

CPC分类号： C30B29/06 ,  C30B25/18 ,  C30B29/52

摘要： A method for manufacturing a strained silicon wafer, having steps of a first step of preparing a single crystal silicon substrate, a second step of forming a graded SiGe layer on the substrate, the graded SiGe layer having a first Ge composition ratio increased stepwisely from 5 to 60% at atomic ratio, a third step of forming a SiGe constant composition layer on the graded SiGe layer, the SiGe constant composition layer having a Ge composition ratio substantially equal to the Ge composition ratio on a surface of the-graded SiGe layer and a fourth step of forming a strained Si layer on the SiGe constant composition layer. The second through fourth steps are performed under the reduced pressure atmosphere while the single crystal silicon substrate is rotated in a circumferential direction at a rate from 300 rpm to 1500 rpm.

摘要翻译： 一种制造应变硅晶片的方法，具有制备单晶硅衬底的第一步骤的步骤，在衬底上形成渐变SiGe层的第二步骤，具有第一Ge组成比的渐变SiGe层从5度逐步增加 至60％原子比的第三步骤，在渐变SiGe层上形成SiGe常数组成层的第三步骤，具有Ge组分比基本上等于Ge组分比的GeGe组成比在SiGe层的表面上的第三步骤;以及 在SiGe恒定组成层上形成应变Si层的第四步骤。 第二至第四步骤在减压气氛下进行，而单晶硅衬底以圆周方向以300rpm至1500rpm的速度旋转。

公开(公告)号：US07247583B2

公开(公告)日：2007-07-24

申请号：US11038180

申请日：2005-01-21

申请人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

发明人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/336 ,  H01L21/8234

CPC分类号： C30B29/06 ,  C30B25/18 ,  C30B29/52

摘要： A method for manufacturing a strained silicon wafer, having steps of a first step of preparing a single crystal silicon substrate, a second step of forming a graded SiGe layer on the substrate, the graded SiGe layer having a first Ge composition ratio increased stepwisely from 5 to 60% at atomic ratio, a third step of forming a SiGe constant composition layer on the graded SiGe layer, the SiGe constant composition layer having a Ge composition ratio substantially equal to the Ge composition ratio on a surface of the-graded SiGe layer and a fourth step of forming a strained Si layer on the SiGe constant composition layer. The second through fourth steps are performed under the reduced pressure atmosphere while the single crystal silicon substrate is rotated in a circumferential direction at a rate from 300 rpm to 1500 rpm.

摘要翻译： 一种制造应变硅晶片的方法，具有制备单晶硅衬底的第一步骤的步骤，在衬底上形成渐变SiGe层的第二步骤，具有第一Ge组成比的渐变SiGe层从5度逐步增加 至60％原子比的第三步骤，在渐变SiGe层上形成SiGe常数组成层的第三步骤，具有Ge组分比基本上等于Ge组分比的GeGe组成比在SiGe层的表面上的第三步骤和 在SiGe恒定组成层上形成应变Si层的第四步骤。 第二至第四步骤在减压气氛下进行，而单晶硅衬底以圆周方向以300rpm至1500rpm的速度旋转。

公开(公告)号：US07060597B2

公开(公告)日：2006-06-13

申请号：US10847305

申请日：2004-05-18

申请人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

发明人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

IPC分类号： H01L21/20

CPC分类号： H01L29/1054 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02658 ,  H01L21/02661 ,  H01L21/324 ,  H01L29/7842

摘要： A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate, forming a plurality of terraces having a width of 0.1 μm or more between the plurality of atomic steps and forming a SiGe layer or a SiGe layer and a Si layer on the silicon substrate.

摘要翻译： 具有应变层的硅基板的制造方法具有在硅基板的表面上形成高度为0.1nm以上的多个原子台阶的步骤，形成宽度为0.1μm以上的多个台阶 在多个原子台阶之间并在硅衬底上形成SiGe层或SiGe层和Si层。