公开(公告)号：US20020024390A1

公开(公告)日：2002-02-28

申请号：US09931877

申请日：2001-08-20

申请人： Hitachi, Ltd.

发明人： Kiichi Yamashita ,  Tomonori Tanoue ,  Isao Ohbu ,  Kenji Sekine

IPC分类号： H03F003/04

CPC分类号： H03F3/19 ,  H03F1/0261 ,  H03F1/302 ,  H03F3/347 ,  H03F2200/444

摘要： There is provided a power amplifier module which is provided with a function of protecting an amplifying device against destruction caused by a standing wave by reflection from an antenna end in load variation, having a high tolerance level of device destruction and is highly efficient. Overcurrent flowing at a base of a final stage amplifying portion GaAs-HBT in load variation is detected and canceled and collector current is restrained to thereby prevent an increase in output and prevent destruction of GaAs-HBT. Further, by also using a function of successively lowering idling current when power source voltage is elevated and a clipping function of diodes connected in parallel with output stage GaAs-HBT, voltage as well as current more than necessary are avoided from being applied on the output stage GaAs-HBT. The tolerance level of device destruction of the power amplifier module can be promoted and device destruction in load variation can be prevented. Further, influence of a current amplification rate of GaAs-HBT on production deviation or temperature variation can be reduced and high production yield can be achieved, which accordingly can contribute to low cost formation.

摘要翻译： 提供了功率放大器模块，该功率放大器模块具有保护放大装置免受来自天线端的负载变化中的由驻波引起的破坏的功能，具有高容量级别的装置破坏并且是高效的。 检测并消除了在负载变化中在最终级放大部分GaAs-HBT的基极处流过的过电流，并且抑制集电极电流，从而防止输出增加并防止GaAs-HBT的破坏。 此外，通过使用当电源电压升高时连续降低怠速电流并且与输出级GaAs-HBT并联连接的二极管的限幅功能，可以避免施加在输出上的电压和电流 阶段GaAs-HBT。 可以促进功率放大器模块的器件损坏的容差水平，并且可以防止器件在负载变化中的破坏。 此外，可以降低GaAs-HBT的电流放大率对生产偏差或温度变化的影响，并且可以实现高生产率，从而可以有助于低成本形成。

公开(公告)号：US20030025555A1

公开(公告)日：2003-02-06

申请号：US10161737

申请日：2002-06-05

申请人： Hitachi, Ltd.

发明人： Masami Ohnishi ,  Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Osamu Kagaya ,  Kenji Sekine

IPC分类号： H03F003/68

CPC分类号： H03F1/56 ,  H03F1/0277 ,  H03F1/565 ,  H03F3/602 ,  H03F3/72 ,  H03F2203/7209

摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.

摘要翻译： 本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。 通过将第一级匹配网络M12和第一级匹配网络M13连接到通过切换操作的功率放大器单元A11和功率放大器单元A12的各个输出节点，连接第一级匹配网络M12的输出节点 M13并联连接M12和M13的连接点与输出端子OUT之间的最后一级匹配网络M11，形成第一级匹配网络M12，M13和最后级匹配网络M11，用于功率放大器 单元A11和A12，使得当一个单元在操作中另一个处于停止操作时，在操作中在输出端子OUT和功率放大器单元之间建立阻抗匹配。 本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。

公开(公告)号：US20040026713A1

公开(公告)日：2004-02-12

申请号：US10441096

申请日：2003-05-20

申请人： Hitachi, Ltd.

发明人： Tomonori Tanoue ,  Kazuhiro Mochizuki ,  Hiroji Yamada

IPC分类号： H01L031/0328 ,  H01L031/0336 ,  H01L031/072 ,  H01L031/109

CPC分类号： H01L29/66318 ,  H01L24/32 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/41708 ,  H01L29/7371 ,  H01L2924/1305 ,  H01L2924/15787 ,  H01L2924/00

摘要： A semiconductor device with high structural reliability and low parasitic capacitance is provided. In one example, the semiconductor device has a surface. The semiconductor device comprises a semiconductor region, wherein an emitter region, a base region, and a collector region are laminated from a side near a substrate of the semiconductor region; an insulating protection layer disposed on the surface; and a wiring layer disposed on the surface, the insulating protection layer forming a via hole from the side of the substrate of the semiconductor region, the via hole being formed to allow the wiring layer to make a contact to an electrode of the emitter region from a side of the substrate where the emitter region, the base region, and the collector region are laminated and where the semiconductor region is isolated.

摘要翻译： 提供具有高结构可靠性和低寄生电容的半导体器件。 在一个示例中，半导体器件具有表面。 半导体器件包括半导体区域，其中从半导体区域的衬底附近的一侧层叠发射极区域，基极区域和集电极区域; 设置在所述表面上的绝缘保护层; 以及设置在所述表面上的布线层，所述绝缘保护层从所述半导体区域的所述基板的侧面形成通孔，所述通孔形成为允许所述布线层与所述发射极区域的电极接触 衬底的一侧，其中发射极区域，基极区域和集电极区域被层叠并且半导体区域被隔离。

公开(公告)号：US20040065900A1

公开(公告)日：2004-04-08

申请号：US10420740

申请日：2003-04-23

申请人： Hitachi, Ltd.

发明人： Yasunari Umemoto ,  Hideyuki Ono ,  Tomonori Tanoue ,  Yasuo Ohsone ,  Isao Ohbu ,  Chushiro Kusano ,  Atsushi Kurokawa ,  Masao Yamane

IPC分类号： H01L031/072

CPC分类号： H01L27/0825 ,  H01L27/0259 ,  H01L29/7371 ,  H01L2224/48091 ,  H01L2224/73265 ,  H03K17/08146 ,  H03K17/615 ,  H01L2924/00014

摘要： The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.

摘要翻译： 本发明旨在提高对半导体器件的破坏性。 具有连接在高输出的放大电路的输出（集电极和发射极）之间的达林顿的多个双极晶体管的保护电路与放大电路并联电连接。 放大电路具有彼此并联连接的多个单元HBT（异质结双极晶体管）。 保护电路具有两级配置，包括具有多个双极晶体管Q1至Q5的第一组保护电路和具有多个双极晶体管的第二组保护电路。

公开(公告)号：US20030218185A1

公开(公告)日：2003-11-27

申请号：US10409455

申请日：2003-04-09

申请人： Hitachi, Ltd.

发明人： Isao Ohbu ,  Tomonori Tanoue ,  Chushiro Kusano ,  Yasunari Umemoto ,  Atsushi Kurokawa ,  Kazuhiro Mochizuki ,  Masami Ohnishi ,  Hidetoshi Matsumoto

IPC分类号： H01L031/0328 ,  H01L031/072 ,  H01L021/331 ,  H01L021/8222

CPC分类号： H01L29/66318 ,  H01L29/0692 ,  H01L29/42304 ,  H01L29/7371 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16152 ,  H03F1/302 ,  H03F3/19 ,  H03F2203/21178

摘要： A first aspect of the invention is to realize a power amplifier having high power adding efficiency and high power gain at low cost. For that purpose, in a semiconductor device using an emitter top heterojunction bipolar transistor formed above a semiconductor substrate and having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. In this way, as a result of enabling to reduce base/collector junction capacitance per unit emitter area without using a collector top structure having complicated fabricating steps, a semiconductor device having high power adding efficiency and high-power gain and suitable for a power amplifier can be realized. A second aspect of the application is to provide a power amplifier enabling to reduce temperature dependency of power gain. For that purpose, in a multistage power amplifier including a first amplifier circuit 2 having one or more of bipolar transistors connected in parallel and arranged above a first semiconductor substrate and a second amplifier circuit 3 having one or more of bipolar transistors connected in parallel and arranged above a second semiconductor substrate, the bipolar transistor used in the first amplifier circuit 2 is provided with an emitter shape having a planar shape in a rectangular shape and the bipolar transistor used in the second amplifier circuit 3 is provided with an emitter shape in, for example, a ring-like shape and a base electrode thereof is present only on the inner side of the ring-like emitter.

摘要翻译： 本发明的第一方面是以低成本实现具有高功率增加效率和高功率增益的功率放大器。 为此，在半导体衬底上形成的具有平面形状为环状形状的发射极顶部异质结双极晶体管的半导体器件中，提供了仅在基板的内侧存在基极的结构 环状发射极 - 基极结区域。 以这种方式，由于能够在不使用具有复杂的制造步骤的集电极顶部结构的情况下，能够减小每单位发射极面积的基极/集电极结电容，所以具有高功率增加效率和高功率增益并适用于功率放大器的半导体器件 可以实现。 该应用的第二方面是提供能够降低功率增益的温度依赖性的功率放大器。 为此，在包括具有并联并且布置在第一半导体衬底之上的一个或多个双极晶体管的第一放大器电路2的多级功率放大器和具有一个或多个双极晶体管并联连接并布置的第二放大器电路3 在第二半导体衬底之上，在第一放大器电路2中使用的双极晶体管具有矩形形状的平面形状的发射极形状，并且在第二放大器电路3中使用的双极晶体管具有发射极形状，用于 例如，环状形状及其基极只存在于环状发射体的内侧。

公开(公告)号：US20030048132A1

公开(公告)日：2003-03-13

申请号：US10192589

申请日：2002-07-11

申请人： Hitachi, Ltd

发明人： Osamu Kagaya ,  Masami Ohnishi ,  Kenji Sekine ,  Tomonori Tanoue

IPC分类号： H03F001/14 ,  H03F003/68

CPC分类号： H03F3/602 ,  H03F1/0277 ,  H03F1/302 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/555 ,  H03F2203/7206 ,  H03F2203/7215 ,  H03F2203/7221 ,  H03F2203/7231 ,  H03F2203/7236

摘要： To provide a small-sized high frequency power amplifier for preventing oscillation by a small number of switching circuits and outputting high power and low power with high efficiencies, a high frequency power amplifier module and a portable telephone, the high frequency power amplifier is constituted by an amplifying circuit A and an amplifying circuit B connected in parallel, a size of a transistor at an output stage of the amplifying circuit B is made to be equal to or smaller than null of a size of a transistor of an output stage of the amplifying circuit A and a switching circuit is connected between a signal line forward from the output stage of the amplifying circuit A and a ground terminal. Further, when the transistor constituting the amplifying circuit B is brought into a nonoperational state and the switching circuit is made OFF, a high frequency signal of high power is outputted from the amplifying circuit A and when the transistor constituting the amplifying circuit A is brought into a nonoperational state and the switching circuit is made ON, a high frequency signal of low power is outputted from the amplifying circuit B.

摘要翻译： 为了提供一种小型高频功率放大器，用于防止少量开关电路的振荡并以高效率输出高功率和低功率，高频功率放大器模块和便携式电话，高频功率放大器由 放大电路A和放大电路B并联连接，将放大电路B的输出级的晶体管的尺寸设定为放大电路的输出级的晶体管的尺寸的1/4 电路A和开关电路连接在从放大电路A的输出级向前方的信号线与接地端子之间。 此外，当构成放大电路B的晶体管处于非工作状态并且使开关电路截止时，从放大电路A输出高功率的高频信号，并且当构成放大电路A的晶体管进入 非工作状态并且开关电路导通，从放大电路B输出低功率的高频信号。