公开(公告)号：US20030102574A1

公开(公告)日：2003-06-05

申请号：US10291840

申请日：2002-11-12

申请人： Hitachi, Ltd.

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L023/48 ,  H01L023/49

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. Particularly, in a high-frequency power amplifier module provided with a semiconductor chip having multistage amplifying transistors on a wiring substrate: an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire connecting a bonding input electrode for a specific one of the amplifying transistors to the wiring substrate and a second auxiliary line connecting bonding portions to each other at the two ends of an output bonding wire connecting an bonding output electrode for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm. As a result, the high-frequency characteristic of the power amplifier module can be improved and the size thereof can be reduced.

公开(公告)号：US20020024390A1

公开(公告)日：2002-02-28

申请号：US09931877

申请日：2001-08-20

申请人： Hitachi, Ltd.

发明人： Kiichi Yamashita ,  Tomonori Tanoue ,  Isao Ohbu ,  Kenji Sekine

IPC分类号： H03F003/04

CPC分类号： H03F3/19 ,  H03F1/0261 ,  H03F1/302 ,  H03F3/347 ,  H03F2200/444

摘要： There is provided a power amplifier module which is provided with a function of protecting an amplifying device against destruction caused by a standing wave by reflection from an antenna end in load variation, having a high tolerance level of device destruction and is highly efficient. Overcurrent flowing at a base of a final stage amplifying portion GaAs-HBT in load variation is detected and canceled and collector current is restrained to thereby prevent an increase in output and prevent destruction of GaAs-HBT. Further, by also using a function of successively lowering idling current when power source voltage is elevated and a clipping function of diodes connected in parallel with output stage GaAs-HBT, voltage as well as current more than necessary are avoided from being applied on the output stage GaAs-HBT. The tolerance level of device destruction of the power amplifier module can be promoted and device destruction in load variation can be prevented. Further, influence of a current amplification rate of GaAs-HBT on production deviation or temperature variation can be reduced and high production yield can be achieved, which accordingly can contribute to low cost formation.

摘要翻译： 提供了功率放大器模块，该功率放大器模块具有保护放大装置免受来自天线端的负载变化中的由驻波引起的破坏的功能，具有高容量级别的装置破坏并且是高效的。 检测并消除了在负载变化中在最终级放大部分GaAs-HBT的基极处流过的过电流，并且抑制集电极电流，从而防止输出增加并防止GaAs-HBT的破坏。 此外，通过使用当电源电压升高时连续降低怠速电流并且与输出级GaAs-HBT并联连接的二极管的限幅功能，可以避免施加在输出上的电压和电流 阶段GaAs-HBT。 可以促进功率放大器模块的器件损坏的容差水平，并且可以防止器件在负载变化中的破坏。 此外，可以降低GaAs-HBT的电流放大率对生产偏差或温度变化的影响，并且可以实现高生产率，从而可以有助于低成本形成。

公开(公告)号：US20030025555A1

公开(公告)日：2003-02-06

申请号：US10161737

申请日：2002-06-05

申请人： Hitachi, Ltd.

发明人： Masami Ohnishi ,  Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Osamu Kagaya ,  Kenji Sekine

IPC分类号： H03F003/68

CPC分类号： H03F1/56 ,  H03F1/0277 ,  H03F1/565 ,  H03F3/602 ,  H03F3/72 ,  H03F2203/7209

摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.

摘要翻译： 本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。 通过将第一级匹配网络M12和第一级匹配网络M13连接到通过切换操作的功率放大器单元A11和功率放大器单元A12的各个输出节点，连接第一级匹配网络M12的输出节点 M13并联连接M12和M13的连接点与输出端子OUT之间的最后一级匹配网络M11，形成第一级匹配网络M12，M13和最后级匹配网络M11，用于功率放大器 单元A11和A12，使得当一个单元在操作中另一个处于停止操作时，在操作中在输出端子OUT和功率放大器单元之间建立阻抗匹配。 本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。

公开(公告)号：US20020089380A1

公开(公告)日：2002-07-11

申请号：US10084364

申请日：2002-02-28

申请人： Hitachi, Ltd.

发明人： Toru Fujioka ,  Isao Yoshida ,  Mineo Katsueda ,  Masatoshi Morikawa ,  Yoshikuni Matsunaga ,  Kenji Sekine ,  Osamu Kagaya

IPC分类号： H03F003/191

CPC分类号： H03F3/72 ,  H03F3/193 ,  H03F3/211 ,  H03F2200/306 ,  H03F2200/309 ,  H03F2200/39 ,  H03F2200/429 ,  H04B1/0053 ,  H04B1/0458

摘要： A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive the first frequency f1 and the second frequency f2 (f2null2nullf1) is structured as explained below. This radio frequency power amplifier module for dual-band type mobile communication apparatus is comprised of a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit is constituted of a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at the harmonics in the frequency twice the frequency f2, a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at the harmonics in the frequency twice the frequency f2 and an output matching circuit provided in series to the other end of the parallel resonance circuit for the matching with f1 and f2. The transmission line is set to terminate at the drain end for the even number order harmonics of f2 with the reactance existing at the drain end and a circuit element constant forming the parallel resonance circuit is set to open at the drain end for the odd number order harmonics of f2 with the series resonance circuit, transmission line and reactance existing at the drain end. With the structure explained above, since harmonics power can be controlled through control of the predetermined harmonics, high efficiency and reduction in size of the radio frequency power amplifier module can be realized.

摘要翻译： 可以如下所述构造用于能够发送和接收第一频率f1和第二频率f2（f2 = 2xf1）的双频带型移动通信装置的射频功率放大器模块。 用于双频带型移动通信装置的射频功率放大器模块包括具有匹配电路的f1和f2处的增益峰值的驱动级放大器和包括射频功率输出晶体管的射频功率输出电路。 输出电路由连接到输出晶体管的漏极端的传输线构成，并联谐振电路与传输线串联连接，以频率f2的频率谐振地谐振，串联谐振电路设置在一个 谐振电路的端部和谐振频率为频率f2的频率的谐波的接地和与并联谐振电路的另一端串联设置以用于与f1和f2匹配的输出匹配电路。 传输线被设置为在漏极端处终止，其中存在于漏极端处的电抗的偶数次谐波为f2，并且形成并联谐振电路的电路元件常数被设置为在漏极端处为奇数阶开路 带有串联谐振电路的f2谐波，漏极端存在的传输线和电抗。 利用上述结构，由于可以通过控制预定谐波来控制谐波功率，可以实现射频功率放大器模块的高效率和小型化。

公开(公告)号：US20030048132A1

公开(公告)日：2003-03-13

申请号：US10192589

申请日：2002-07-11

申请人： Hitachi, Ltd

发明人： Osamu Kagaya ,  Masami Ohnishi ,  Kenji Sekine ,  Tomonori Tanoue

IPC分类号： H03F001/14 ,  H03F003/68

CPC分类号： H03F3/602 ,  H03F1/0277 ,  H03F1/302 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/555 ,  H03F2203/7206 ,  H03F2203/7215 ,  H03F2203/7221 ,  H03F2203/7231 ,  H03F2203/7236

摘要： To provide a small-sized high frequency power amplifier for preventing oscillation by a small number of switching circuits and outputting high power and low power with high efficiencies, a high frequency power amplifier module and a portable telephone, the high frequency power amplifier is constituted by an amplifying circuit A and an amplifying circuit B connected in parallel, a size of a transistor at an output stage of the amplifying circuit B is made to be equal to or smaller than null of a size of a transistor of an output stage of the amplifying circuit A and a switching circuit is connected between a signal line forward from the output stage of the amplifying circuit A and a ground terminal. Further, when the transistor constituting the amplifying circuit B is brought into a nonoperational state and the switching circuit is made OFF, a high frequency signal of high power is outputted from the amplifying circuit A and when the transistor constituting the amplifying circuit A is brought into a nonoperational state and the switching circuit is made ON, a high frequency signal of low power is outputted from the amplifying circuit B.

摘要翻译： 为了提供一种小型高频功率放大器，用于防止少量开关电路的振荡并以高效率输出高功率和低功率，高频功率放大器模块和便携式电话，高频功率放大器由 放大电路A和放大电路B并联连接，将放大电路B的输出级的晶体管的尺寸设定为放大电路的输出级的晶体管的尺寸的1/4 电路A和开关电路连接在从放大电路A的输出级向前方的信号线与接地端子之间。 此外，当构成放大电路B的晶体管处于非工作状态并且使开关电路截止时，从放大电路A输出高功率的高频信号，并且当构成放大电路A的晶体管进入 非工作状态并且开关电路导通，从放大电路B输出低功率的高频信号。

公开(公告)号：US20020015291A1

公开(公告)日：2002-02-07

申请号：US09970668

申请日：2001-10-05

申请人： Hitachi, Ltd.

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H05K007/02

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. Particularly, in a high-frequency power amplifier module provided with a semiconductor chip having multistage amplifying transistors on a wiring substrate: an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire connecting a bonding input electrode for a specific one of the amplifying transistors to the wiring substrate and a second auxiliary line connecting bonding portions to each other at the two ends of an output bonding wire connecting an bonding output electrode for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm. As a result, the high-frequency characteristic of the power amplifier module can be improved and the size thereof can be reduced.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸小，将电连接到固定参考电位的线的衬底侧接合电极放置在比半导体芯片的离开半导体芯片的一侧更远的位置处， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。 特别是在具有在布线基板上具有多级放大晶体管的半导体芯片的高频功率放大器模块中，由连接接合用输入接合线的输入接合线的两端的接合部彼此连接的第一辅助线形成的角度 用于布线基板的特定一个放大晶体管的输入电极以及在特定放大后的阶段连接用于另一个放大晶体管的接合输出电极的输出接合线的两端彼此连接接合部分的第二辅助线 晶体管对布线基板在72度到180度的范围内; 并且接合输入电极和接合输出电极的接合部之间的间隙为至少0.3mm但小于0.8mm。 结果，可以提高功率放大器模块的高频特性，并且可以减小其尺寸。