公开(公告)号：US20020191378A1

公开(公告)日：2002-12-19

申请号：US10207070

申请日：2002-07-30

申请人： Hitachi, Ltd.

发明人： Seikou Suzuki ,  Yasuo Kondo ,  Teruyoshi Abe ,  Noriyuki Watanabe ,  Takashi Suzumura ,  Kazuhiko Nakagawa

IPC分类号： H05K007/20

CPC分类号： H01L24/32 ,  H01L23/3735 ,  H01L24/29 ,  H01L2224/29111 ,  H01L2224/29298 ,  H01L2224/83101 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01003 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/1517 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/351 ,  H05K1/0306 ,  H05K3/0058 ,  H05K3/38 ,  H01L2924/01014 ,  H01L2924/01031 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00

摘要： A semiconductor power element heat dissipation board is provided having a high bonding strength without voids in the bonding portion, and high reliability without forming a thick brittle Al/Cu intermetallic chemical compound. The manufacturing method is simple. The semiconductor power element heat dissipation board has a structure formed by bonding laminated bodies of a conductor plate, a ceramic plate and a heat sink plate using an aluminum alloy group solder of a clad type, and the semiconductor power element heat dissipation board is characterized by that the bonding strengths between the conductor plate and the ceramic plate and between the ceramic plate and the heat sink plate are above several tens MPa, and by that the semiconductor power element heat dissipation board has a diffusion suppression member for preventing or suppressing diffusion to aluminum in the solder, and by that the plates are bonded by any one of or combination of a composite solder having an aluminum alloy group solder on a core member made of aluminum or an aluminum alloy and a low temperature melting point aluminum solder. The present invention also relates to a conductor plate and a heat sink plate for the semiconductor power element heat dissipation board, and to a power module and a composite plate using the semiconductor power element heat dissipation board.

摘要翻译： 提供了一种半导体功率元件散热板，其在接合部分中没有空隙的高结合强度，并且在不形成厚的脆性Al / Cu金属间化合物的情况下具有高可靠性。 制造方法简单。 半导体功率元件散热板具有通过使用包层型铝合金焊料将导体板，陶瓷板和散热板接合的层叠体形成的结构，半导体功率元件散热板的特征在于， 导体板和陶瓷板之间以及陶瓷板和散热板之间的结合强度高于几十MPa，半导体功率元件散热板具有用于防止或抑制扩散到铝的扩散抑制部件 在焊料中，并且通过在由铝或铝合金制成的芯部件和低温熔点铝焊料上的具有铝合金组焊料的复合焊料中的任何一种或组合将板接合。 本发明还涉及一种用于半导体功率元件散热板的导体板和散热板，以及使用半导体功率元件散热板的功率模块和复合板。

公开(公告)号：US20030201530A1

公开(公告)日：2003-10-30

申请号：US10428787

申请日：2003-05-05

申请人： Hitachi, Ltd.

发明人： Yasutoshi Kurihara ,  Yasuo Kondo ,  Takumi Ueno ,  Toshiaki Morita ,  Kenji Koyama ,  Takashi Suzumura ,  Kazuhiko Nakagawa ,  Kunihiro Fukuda

IPC分类号： B32B015/00

CPC分类号： H01L23/142 ,  H01L23/3736 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15322 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H05K1/05 ,  Y10T428/12083 ,  Y10T428/12535 ,  Y10T428/12611 ,  Y10T428/12889 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/25 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 nullm or larger exists in an interface formed by the composite metal plate and the metal layer.