公开(公告)号：US20170317418A1

公开(公告)日：2017-11-02

申请号：US15647996

申请日：2017-07-12

申请人： International Business Machines Corporation

发明人： Alberto V. Garcia ,  Xiaoxiong Gu ,  Duixian Liu

IPC分类号： H01Q9/04 ,  G06K19/077 ,  H01Q19/30 ,  H01Q1/38 ,  H01Q23/00 ,  H01Q21/28 ,  H01L23/00

CPC分类号： H01Q9/0407 ,  G06K19/077 ,  G06K19/07749 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/33 ,  H01L2223/6677 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17517 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/15192 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/3025 ,  H01Q1/38 ,  H01Q19/30 ,  H01Q21/28 ,  H01Q23/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Package structures are provided having antenna-in-packages that are integrated with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems that operate in the millimeter wave (mmWave) frequency range with radiation in broadside and end-fire directions.

公开(公告)号：US08884431B2

公开(公告)日：2014-11-11

申请号：US13228768

申请日：2011-09-09

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L23/498 ,  H01L21/56 ,  H01L25/065 ,  H01L23/538 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31 ,  H01L25/10 ,  H01L25/03 ,  H01L21/768

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06515 ,  H01L2224/09181 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2924/00

摘要： Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL.

摘要翻译： 公开了用于半导体器件的封装方法和结构。 在一个实施例中，封装的半导体器件包括具有第一表面和与第一表面相对的第二表面的再分配层（RDL）。 至少一个集成电路耦合到RDL的第一表面，并且多个金属凸块耦合到RDL的第二表面。 模制化合物设置在RDL的至少一个集成电路和第一表面上。

公开(公告)号：US08878353B2

公开(公告)日：2014-11-04

申请号：US13722189

申请日：2012-12-20

申请人： Invensas Corporation

发明人： Belgacem Haba ,  Ilyas Mohammed ,  Terrence Caskey ,  Reynaldo Co ,  Ellis Chau

IPC分类号： H01L23/02 ,  H01L21/00 ,  H05K1/18 ,  H01L23/00 ,  H01L23/528

CPC分类号： H05K1/11 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/528 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1191 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13101 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14135 ,  H01L2224/16105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/32225 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45101 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H05K1/0298 ,  H05K1/181 ,  H05K1/185 ,  H05K2201/10515 ,  H05K2201/10977 ,  Y02P70/611 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

摘要： A structure may include bond elements having bases joined to conductive elements at a first portion of a first surface and end surfaces remote from the substrate. A dielectric encapsulation element may overlie and extend from the first portion and fill spaces between the bond elements to separate the bond elements from one another. The encapsulation element has a third surface facing away from the first surface. Unencapsulated portions of the bond elements are defined by at least portions of the end surfaces uncovered by the encapsulation element at the third surface. The encapsulation element at least partially defines a second portion of the first surface that is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some conductive elements are at the second portion and configured for connection with such microelectronic element.

摘要翻译： 结构可以包括在第一表面的第一部分和远离基底的端表面处具有连接到导电元件的基底的结合元件。 电介质封装元件可以从第一部分覆盖并延伸并填充接合元件之间的空间，以将接合元件彼此分开。 封装元件具有背离第一表面的第三表面。 粘合元件的未封装部分由在第三表面处被封装元件未覆盖的至少部分端面限定。 封装元件至少部分地限定除了第一部分之外的第一表面的第二部分，并且具有尺寸适于容纳微电子元件的整个区域的区域。 一些导电元件位于第二部分并被配置为与这种微电子元件连接。

公开(公告)号：US20030201530A1

公开(公告)日：2003-10-30

申请号：US10428787

申请日：2003-05-05

申请人： Hitachi, Ltd.

发明人： Yasutoshi Kurihara ,  Yasuo Kondo ,  Takumi Ueno ,  Toshiaki Morita ,  Kenji Koyama ,  Takashi Suzumura ,  Kazuhiko Nakagawa ,  Kunihiro Fukuda

IPC分类号： B32B015/00

CPC分类号： H01L23/142 ,  H01L23/3736 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15322 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H05K1/05 ,  Y10T428/12083 ,  Y10T428/12535 ,  Y10T428/12611 ,  Y10T428/12889 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/25 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 nullm or larger exists in an interface formed by the composite metal plate and the metal layer.

公开(公告)号：US20020192488A1

公开(公告)日：2002-12-19

申请号：US10083158

申请日：2002-02-27

发明人： Yasutoshi Kurihara ,  Yasuo Kondo ,  Takumi Ueno ,  Toshiaki Morita ,  Kenji Koyama ,  Takashi Suzumura ,  Kazuhiko Nakagawa ,  Kunihiro Fukuda

IPC分类号： B32B015/01 ,  B32B009/00 ,  B32B015/04

CPC分类号： H01L23/142 ,  H01L23/3736 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15322 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H05K1/05 ,  Y10T428/12083 ,  Y10T428/12535 ,  Y10T428/12611 ,  Y10T428/12889 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/25 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 nullm or larger exists in an interface formed by the composite metal plate and the metal layer.

摘要翻译： 为了提供一种用于半导体器件的复合材料部件，使用该复合材料部件的绝缘半导体器件和非绝缘半导体器件，其有效获得减轻在生产或操作期间发生的热应力或热应变的半导体器件，没有可能性 的变形，退化和破裂，并且高度可靠和便宜。 上述半导体装置用复合材料构件的特征在于：复合金属板具有分散在铜基体中的氧化亚铜的复合金属板，复合金属板的表面被金属层覆盖，铜层的厚度为 在由复合金属板和金属层形成的界面中存在0.5μm以上。

公开(公告)号：US6011299A

公开(公告)日：2000-01-04

申请号：US686633

申请日：1996-07-24

申请人： Colin E. Brench

发明人： Colin E. Brench

IPC分类号： H01L23/36 ,  H01L23/552 ,  H05K1/02 ,  H01L23/10 ,  H01L23/34

CPC分类号： H01L23/36 ,  H01L23/552 ,  H05K1/0218 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/15322 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/19106 ,  H01L2924/3025

摘要： A set of conductive plates are positioned adjacent to and in close proximity with a unidirectional heatsink on a high frequency integrated circuit. The set of plates is generally electrically attached to the same ground potential voltage supply as the integrated circuit and serves to damped unwanted radio frequency electromagnetic radiation normally emitted by heatsinks. The same arrangement of plates can also serve as an external electromagnetic interference shield apparatus for the integrated circuit. The plates may alternatively be comprised of a conductive mesh to allow air flow through the plates.

摘要翻译： 一组导电板位于与高频集成电路上的单向散热器相邻并且紧邻的位置。 该组板通常电连接到与集成电路相同的地电位电压源，并且用于阻尼通常由散热器发射的不需要的射频电磁辐射。 板的相同布置也可以用作集成电路的外部电磁干扰屏蔽装置。 板可以替代地由导电网组成，以允许空气流过板。

公开(公告)号：US10043779B2

公开(公告)日：2018-08-07

申请号：US15353577

申请日：2016-11-16

申请人： Invensas Corporation

发明人： Ashok S. Prabhu ,  Rajesh Katkar

IPC分类号： H01L25/065 ,  H01L21/56 ,  H01L23/48 ,  H01L21/288 ,  H01L25/00 ,  H01L23/31 ,  H01L21/768 ,  H01L21/683 ,  H01L21/48 ,  H01L21/54 ,  H01L23/18 ,  H01L23/538 ,  H01L25/10 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L21/288 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/54 ,  H01L21/56 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76885 ,  H01L21/76895 ,  H01L23/18 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/81005 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/15311 ,  H01L2924/15322 ,  H01L2924/18161 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/00014

摘要： Methods and apparatuses relate generally to a packaged microelectronic device for a package-on-package device (“PoP”) with enhanced tolerance for warping. In one such packaged microelectronic device, interconnect structures are in an outer region of the packaged microelectronic device. A microelectronic device is coupled in an inner region of the packaged microelectronic device inside the outer region. A dielectric layer surrounds at least portions of shafts of the interconnect structures and along sides of the microelectronic device. The interconnect structures have first ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

公开(公告)号：US09806422B2

公开(公告)日：2017-10-31

申请号：US14565616

申请日：2014-12-10

申请人： International Business Machines Corporation

发明人： Alberto V. Garcia ,  Xiaoxiong Gu ,  Duixian Liu

IPC分类号： H01Q9/04 ,  H01Q21/28 ,  H01Q1/38 ,  H01Q19/30 ,  H01Q23/00 ,  G06K19/077 ,  H01L23/00

CPC分类号： H01Q9/0407 ,  G06K19/077 ,  G06K19/07749 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17517 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/15192 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01Q1/38 ,  H01Q19/30 ,  H01Q21/28 ,  H01Q23/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Package structures are provided having antenna-in-packages that are integrated with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems that operate in the millimeter wave (mmWave) frequency range with radiation in broadside and end-fire directions.

公开(公告)号：US09082636B2

公开(公告)日：2015-07-14

申请号：US14523248

申请日：2014-10-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Wei Lin ,  Kuei-Wei Huang ,  Yu-Peng Tsai ,  Chun-Cheng Lin ,  Meng-Tse Chen ,  Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Bor-Ping Jang ,  Hsiu-Jen Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Wei-Hung Lin

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683 ,  H01L25/00 ,  H01L23/538 ,  H01L21/52 ,  H01L21/768 ,  H01L23/31 ,  H01L25/03 ,  H01L25/10

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06515 ,  H01L2224/09181 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2924/00

摘要： Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL.

摘要翻译： 公开了用于半导体器件的封装方法和结构。 在一个实施例中，封装的半导体器件包括具有第一表面和与第一表面相对的第二表面的再分配层（RDL）。 至少一个集成电路耦合到RDL的第一表面，并且多个金属凸块耦合到RDL的第二表面。 模制化合物设置在RDL的至少一个集成电路和第一表面上。

公开(公告)号：US20150034371A1

公开(公告)日：2015-02-05

申请号：US14517268

申请日：2014-10-17

申请人： INVENSAS CORPORATION

发明人： Belgacem Haba ,  Ilyas Mohammed ,  Terrence Caskey ,  Reynaldo Co ,  Ellis Chau

IPC分类号： H05K1/18

CPC分类号： H05K1/11 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/528 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1191 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13101 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14135 ,  H01L2224/16105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/32225 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45101 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H05K1/0298 ,  H05K1/181 ,  H05K1/185 ,  H05K2201/10515 ,  H05K2201/10977 ,  Y02P70/611 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

摘要： A structure may include bond elements having bases joined to conductive elements at a first portion of a first surface and end surfaces remote from the substrate. A dielectric encapsulation element may overlie and extend from the first portion and fill spaces between the bond elements to separate the bond elements from one another. The encapsulation element has a third surface facing away from the first surface. Unencapsulated portions of the bond elements are defined by at least portions of the end surfaces uncovered by the encapsulation element at the third surface. The encapsulation element at least partially defines a second portion of the first surface that is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some conductive elements are at the second portion and configured for connection with such microelectronic element.

摘要翻译： 结构可以包括在第一表面的第一部分和远离基底的端表面处具有连接到导电元件的基底的结合元件。 电介质封装元件可以从第一部分覆盖并延伸并填充接合元件之间的空间，以将接合元件彼此分开。 封装元件具有背离第一表面的第三表面。 粘合元件的未封装部分由在第三表面处被封装元件未覆盖的至少部分端面限定。 封装元件至少部分地限定除了第一部分之外的第一表面的第二部分，并且具有尺寸适于容纳微电子元件的整个区域的区域。 一些导电元件位于第二部分并被配置为与这种微电子元件连接。