公开(公告)号：US20160079043A1

公开(公告)日：2016-03-17

申请号：US14851996

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Tomoyuki TAMURA ,  Masaki ISHIGURO ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Makoto NAWATA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/6833 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32577 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138

Abstract: A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped.

Abstract translation: 等离子体处理装置包括在形成等离子体的处理室中的台，待处理的晶片和布置在台的上部的电极，并且供电以将晶片静电吸引并保持在平台上，并且连续地 一个接一个地处理多个晶片。 存在在不同条件下进行使用等离子体的处理的多个处理步骤，并且在处理步骤之间停止形成等离子体时存在多个时段。 在开始处理任何晶片之前涂覆处理室的内壁，并且在停止等离子体的形成期间的每个时间段期间，根据在处理室中漂浮并带电的颗粒的各自的极性的平衡来改变提供给电极的电压 。

公开(公告)号：US20170194157A1

公开(公告)日：2017-07-06

申请号：US15248205

申请日：2016-08-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Tomoyuki TAMURA ,  Kazuyuki IKENAGA

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/6833

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

公开(公告)号：US20160027615A1

公开(公告)日：2016-01-28

申请号：US14788759

申请日：2015-06-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Tomoyuki TAMURA

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32706 ,  H01J37/32935 ,  H01J37/3299

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

Abstract translation: 一种等离子体处理装置，包括：等离子体处理室; 射频电源; 安装样品的样品台; 布置在样品台内部并静电卡住样品的电极; 直流电源，其向所述电极施加直流电压; 以及控制装置，其控制所述直流电源的输出电压，使得所述样品的电位与所述等离子体处理室的内壁的电位之间的电位差降低到预定的 等离子体放电中断时的范围。

公开(公告)号：US20190333772A1

公开(公告)日：2019-10-31

申请号：US16506095

申请日：2019-07-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Tomoyuki TAMURA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683

Abstract: A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

公开(公告)号：US20160172161A1

公开(公告)日：2016-06-16

申请号：US14834404

申请日：2015-08-24

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazuyuki IKENAGA ,  Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32697 ,  H01J37/32706 ,  H01J37/32724

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

Abstract translation: 本发明提供一种等离子体处理装置，其能够获得期望的蚀刻轮廓并防止由于颗粒的粘附导致的屈服率的降低，并且装备有其中样品被等离子体处理的处理室; 用于提供用于产生等离子体的射频电力的射频电源; 样品台，其设置有用于静电吸附样品的电极，并且其上安装有样品; 以及用于向电极施加直流电压的直流电源，该装置还配备有用于控制直流电源的控制装置，以便施加这样的直流电压，以在不存在的情况下降低样品的电位的绝对值 的等离子体。

公开(公告)号：US20200058511A1

公开(公告)日：2020-02-20

申请号：US16660938

申请日：2019-10-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Tomoyuki TAMURA ,  Kazuyuki IKENAGA

IPC: H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

公开(公告)号：US20180190502A1

公开(公告)日：2018-07-05

申请号：US15904856

申请日：2018-02-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Tomoyuki TAMURA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32422 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32917 ,  H01J37/32972 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

公开(公告)号：US20160336185A1

公开(公告)日：2016-11-17

申请号：US15057162

申请日：2016-03-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Tomoyuki TAMURA

IPC: H01L21/3065 ,  H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32422 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32917 ,  H01J37/32972 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

Abstract translation: 一种等离子体处理装置包括：使用等离子体处理样品的等离子体处理室，提供用于产生等离子体的射频功率的射频电源，包括静电夹持样品的电极的样品台，将样品安装在其上的直流电源施加 DC电压，并且控制装置将预先设定的直流电压在等离子体放电期间沿负方向移位第一偏移量，将沿负方向偏移第一移位量的直流电压移位， 在等离子体放电之后的第二偏移量的正方向。 当沿正方向移动DC电压时，第一移位量具有将样品表面上的电位值改变为0V。 第二移位量具有基于等离子体的浮动电位获得的值。