-
公开(公告)号：US10332760B2
公开(公告)日：2019-06-25
申请号：US14832239
申请日：2015-08-21
发明人： Masahito Mori , Akira Hirata , Koichi Yamamoto , Takao Arase
摘要： There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value.
-
公开(公告)号：US10157750B2
公开(公告)日：2018-12-18
申请号：US15558045
申请日：2017-01-31
发明人： Satoshi Terakura , Masahito Mori , Takao Arase , Taku Iwase
IPC分类号： H01L21/3065 , H05H1/46 , H01L21/02 , H01L21/027 , H01J37/32 , H01L21/311
摘要： The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.
-
公开(公告)号：US11355322B2
公开(公告)日：2022-06-07
申请号：US15425014
申请日：2017-02-06
发明人： Taku Iwase , Masahito Mori , Takao Arase , Kenetsu Yokogawa
IPC分类号： H01J37/32
摘要： Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.
-
公开(公告)号：US09779919B2
公开(公告)日：2017-10-03
申请号：US14972286
申请日：2015-12-17
IPC分类号： H01L21/00 , H01J37/32 , H01L21/683 , H01L21/67
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32706 , H01J37/32715 , H01L21/67248 , H01L21/6831 , H01L21/6833
摘要： To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force without breakdown of an electrostatic chucking film.When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.
-
公开(公告)号：US20160203958A1
公开(公告)日：2016-07-14
申请号：US14972286
申请日：2015-12-17
IPC分类号： H01J37/32 , H01L21/683 , H01L21/66 , H01L21/67
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32706 , H01J37/32715 , H01L21/67248 , H01L21/6831 , H01L21/6833
摘要： To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force without breakdown of an electrostatic chucking film.When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.
摘要翻译： 以高精度控制等离子体处理中的样品的温度，同时确保静电吸附力而不会使静电吸附膜破裂。 当射频功率被时间调制时，高压侧Vpp检测器检测第一电压值，其是在时间调制的第一周期中施加到采样级的射频电压的峰 - 峰值电压值 具有第一幅度。 低压侧Vpp检测器检测第二电压值，该第二电压值是在具有小于第一幅度的第二幅度的第二周期中施加到采样级的射频电压的峰 - 峰值电压值。 然后，ESC电源控制单元基于第一电压值，第二电压值和时间调制的占空比来控制来自ESC电源的输出电压。
-
公开(公告)号：US20150221518A1
公开(公告)日：2015-08-06
申请号：US14448709
申请日：2014-07-31
发明人： Satoshi Terakura , Masahito Mori , Takao Arase , Ryuta Machida
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01L21/311 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L27/11556 , H01L27/11582
摘要： In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NF3 gas and a CH3F gas.
摘要翻译： 在本发明中，对层叠有含硅膜和二氧化硅膜的第一层压膜的第二层叠膜进行等离子体蚀刻的干蚀刻方法，并且配置在第二层叠膜上的无机膜 包括通过NF 3气体和CH 3 F气体的混合气体来蚀刻无机膜和第二层压膜。
-
公开(公告)号：US09905431B2
公开(公告)日：2018-02-27
申请号：US14448709
申请日：2014-07-31
发明人： Satoshi Terakura , Masahito Mori , Takao Arase , Ryuta Machida
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , B44C1/22 , H01L21/311 , H01L21/3213 , H01L27/11556 , H01L27/11582
CPC分类号： H01L21/31116 , H01L21/311 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L27/11556 , H01L27/11582
摘要： In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NF3 gas and a CH3F gas.
-
公开(公告)号：US20140225503A1
公开(公告)日：2014-08-14
申请号：US14177251
申请日：2014-02-11
发明人： Masahito Mori , Akira Hirata , Koichi Yamamoto , Takao Arase
IPC分类号： H01J37/32
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32183 , H01J37/32926 , H01J37/3299
摘要： There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value.
摘要翻译： 提供了一种用于控制等离子体处理装置的方法，即使在多步骤蚀刻中，也能够在保持低污染和高均匀性的同时消除对共振点的初步研究。 在一种用于控制等离子体处理装置的方法中，包括调整携带到对侧天线电极的射频偏置电流的步骤，该方法包括以下步骤：将可变元件的电抗设定为初始值; 检测携带到所述对置天线电极的偏置电流; 搜索检测到的电流的最大值; 并将可变元件的电抗值从最大值调整到设定值，然后固定该值。
-
公开(公告)号：US10229838B2
公开(公告)日：2019-03-12
申请号：US15701692
申请日：2017-09-12
发明人： Ryo Ishimaru , Satoshi Une , Masahito Mori
IPC分类号： H01L21/302 , H01L21/3213 , H01L21/306 , H01L21/311 , H01L21/28
摘要： A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.
-
公开(公告)号：US09887070B2
公开(公告)日：2018-02-06
申请号：US15671381
申请日：2017-08-08
IPC分类号： H01L21/00 , H01J37/32 , H01L21/67 , H01L21/683
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32706 , H01J37/32715 , H01L21/67248 , H01L21/6831 , H01L21/6833
摘要： To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force 5 without breakdown of an electrostatic chucking film. When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a 10 first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from 15 ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.
-
-
-
-
-
-
-
-
-
搜索结果
20 条记录 (耗时 0.018 秒)
