摘要:
New oxime sulfonate compounds of the formula I, II, III, IV, V, VI and VII R1 is for example C1-C18alkylsulfonyl, R2 is halogen or C1-C10haloalkyl; R3 is for example unsubstitude or substituted phenylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; Ar1 is for example a direct bond, C1-C12alkylene; —O—C-bond or a —O—Si—bond which cleaves upon the action of an acid; A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11 and A12 are for example a direct bond, —O—, or —S—, or are C1-C12alkylene or phenylene unsubstituted or substituted; Y0 is C1-C12alkylene which is for example substituted by OR4, or SR7; Y2 is e.g. a trivalent radical of C1-C12alkylene; Y3 is e.g. a tetravalent radical of C1-C12alkylene; X is halogen; Ar′1 is for example C1-C12alkyl which is unsubstituted or substituted; Ar″1 is for example phenylene; provided that at least one of the radicals Ar′1, Ar″11 is substituted by 1 to 3 groups of example halogen; R15, R16, R17 and R18 e.g. hydrogen or phenyl; R19, R20, R21, R22 and R23 are e.g. phenyl; are especially suitable for the preparation of photoresists.
摘要:
Photoinitiators of formula (Ia) or (Ib) having chain transfer groups, wherein n is 1 or 2; PI is for example a group of formula (IIa); PI′ inter alia is a group of formula (IIIa); Ar is for example phenyl; Ar2 is inter alia phenylene; R1 and R2 are for example C1-C8alkyl, or R1 and R2 together C2-C9alkylene; M1 inter alia is —NR3R4 or —OH; M1′ is for example a group (c); R3′ is a direct bond, C1-C12alkylene, or phenylene; R3 is for example hydrogen, or C1-C12alkyl; R4 is e.g. C1-C12alkyl; A1 and A2 are for example a direct bond; CT is a chain transfer group; are useful for the preparation of macrophotoinitiators which can be employed for preparing block copolymers.
摘要:
New oxime sulfonate compounds of the formula I, II, III, IV, V, VI and VII R1 is for example C1–C18alkylsulfonyl, R2 is halogen or C1–C10haloalkyl; R3 is for example unsubstitude or substituted phenylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; Ar1 is for example a direct bond, C1–C12alkylene; —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11 and A12 are for example a direct bond, —O—, or —S—, or are C1–C12alkylene or phenylene unsubstituted or substituted; Y1 is C1–C12alkylene which is for example substituted by OR4, or SR7; Y2 is e.g. a trivalent radical of C1–C12alkylene; Y3 is e.g. a tetravalent radical of C1–C12alkylene; X is halogen; Ar′1 is for example C1–C12alkyl which is unsubstituted or substituted; Ar″1 is for example phenylene; provided that at least one of the radicals Ar′1, Ar″1, is substituted by 1 to 3 groups of example halogen; R15, R16, R17 and R18 e.g. hydrogen or phenyl; R19, R20, R21, R22 R23 are e.g. phenyl; are especially suitable for the preparation of photoresists.
摘要:
New oxime sulfonate compounds of the formula (I) and (II), wherein R1 is C1-C12alkyl, C1C4haloalkyl, hydrogon, OR9, NR10R11, SR12 or is phenyl which is unsubstituted or substituted by OH, C1-C18alkyl, halogen and/or C1-C12alkoxy; R2, R3, R4 and R5 are for example hydrogen or C1-C12alkyl; R6 is for example is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl or phenylsulfonyl; R′6 is for example phenylenedisulfonyl or diphenylenedisulfonyl; R7, R8 and R9 for example are hydrogen or C1-C6alkyl; R10 and R11, are for example hydrogen or C1-C18alkyl; R12 is for example hydrogen, phenyl or C1-C18alkyl; A is S, O, NR13, or a group of formula A1, A2 or A3, R21 and R22 independently of one other have one of the meanings given for R7; R23, R24, R25 and R26 independently of one another are for example hydrogen, C1-C4alkyl, halogen or phenyl; Z is CR22 or N; and Z1 is CR22 or N; and Z1 is CR22 or N; and Z1 is CH2, S, O or NR13 are particularly suitable as photo-latent acids in resist applications.
摘要:
Compounds with chain transfer groups of the formula I, II, III and IV wherein a is 1 or 2; Ar and Ar1 inter alia are phenyl; Ar2 inter alia is phenylene, these groups being unsubstituted or substituted; X is a direct bond, —O—, —S— or —N(R6)—; Y inter alia is hydrogen or C1-C12alkyl; M1 is —NR3R4 or —OH, or M1 is Ar when R1 and R2 are alkoxy, or aryloxy; R1 and R2 independently of one another e.g. are C1-C8alkyl; R3 and R4 for example are C1-C12alkyl, or together are C3-C7alkylene; R5 inter alia is C1-C6alkylene or a direct bond; R6 is for example hydrogen; and Z is a divalent radical, provided that at least one of the radicals Ar, Ar1, Ar2, R1, R2, R3, R4, R5 or Y is substituted by SH groups; are suitable for the thermal preparation of macrophotoinitiators which are polymerized photochemically to give block-copolymers.
摘要:
Compounds of formula I, II and III, wherein wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; R′1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1-C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R′3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as phototsensitive acid-donors in chemically amplified resist formulations.
摘要:
Compounds of formula I, II and III, wherein wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; R′1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1-C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R′3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as photosensitive acid-donors in chemically amplified resist formulations.
摘要:
Compounds of the formula I or II wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphenylene, heteroarylene, oxydiphenylene, phenylene-D-D1-D-phenylene or —Ar″1-A1-Y1-A1-Ar″1—; wherein these radicals optionally are substituted; Ar″1 is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A1 is for example a direct bond, —O—, —S—, or —NR6—; Y1 inter alia is C1-C18alkylene; X is halogen; D is for example —O—, —S— or —NR6—; D1 inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要:
Chemically amplified photoresist compositions comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) a compound of the formula (Ia), (Ib), (IIa), (IIb), (IIIa), (IIIb), (Iva), (Ivb), (Va), (Vb) or (VIa), wherein n is 1 or 2; m is 0 or 1; X0 is —[CH2]h—X or —CH═CH2; h is 2, 3, 4, 5 or 6; R1 when n is 1, is for example optionally substituted phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl; R1, when n is 2, is for example optionally substituted phenylene or naphthylene; R2 for example has one of the meanings of R1; X is for example —OR20, —NR21R22, —SR23; X′ is —X1-A3-X2—; X1 and X2 are for example —O—, —S— or a direct bond; A3 is e.g. phenylene; R3 has for example one of the meanings given for R1; R4 has for example one of the meaning given for R2; R5 and R6 e.g. are hydrogen; G i.a. is —S— or —O—; R7 when n is 1, e.g. is phenyl, optionally substituted, when n is 2, is for example phenylene; R8 and R9 e.g. are C1-C18alkyl; R10 has one of the meanings given for R7; R11 i.a. is C1-C18alkyl; R12, R13, R14, R15 R16, R17 and R18 for example are hydrogen or C1-C18alkyl; R20, R21, R22 and R23 i.a are phenyl or C1-C18alkyl; give high resolution with good resist profile.