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    Medical devices containing segmented polyurethane biomaterials
    2.
    发明授权
    Medical devices containing segmented polyurethane biomaterials 失效
    含有分段聚氨酯生物材料的医疗器械

    公开(公告)号：US06915168B1

    公开(公告)日：2005-07-05

    申请号：US09423332

    申请日：1998-05-08

    申请人： Michael D. Benz ,  Kelvin Bonnema ,  Edward Didomenico ,  Christopher M. Hobot ,  David L. Miller

    发明人： Michael D. Benz ,  Kelvin Bonnema ,  Edward Didomenico ,  Christopher M. Hobot ,  David L. Miller

    IPC分类号： A61L31/06 ,  A61N1/02 ,  A61N1/05

    CPC分类号： A61L31/06

    摘要： In one aspect, the present invention relates to a medical device, such as a medical electrical lead, comprising a biomaterial formed from a polymer comprising urethane groups and saturated linear polyethylene moieties wherein the saturated linear polethylene moieties have greater than 12 carbon atoms per moiety. In another aspect, the present invention relates medical devices comprising a biomaterial formed from segmented polymers or polymers having an elongation of greater than 50%. Exemplified polymers contain compounds of the formula HO—(CH2)n—OH wherein n is greater than 12.

    摘要翻译： 一方面，本发明涉及一种医疗装置，例如医用电导线，其包含由包含氨基甲酸酯基团和饱和线性聚乙烯部分的聚合物形成的生物材料，其中饱和直链极性亚乙基部分每个部分具有大于12个碳原子。 另一方面，本发明涉及包含由具有大于50％的伸长率的分段聚合物或聚合物形成的生物材料的医疗装置。 示例性聚合物含有式HO-（CH 2）n -OH的化合物，其中n大于12。

    Autoclavable battery pack
    3.
    发明授权
    Autoclavable battery pack 有权
    高压灭菌电池组

    公开(公告)号：US06756766B2

    公开(公告)日：2004-06-29

    申请号：US10287727

    申请日：2002-11-04

    申请人： David L. Miller

    发明人： David L. Miller

    IPC分类号： H02J700

    CPC分类号： H01M2/1055

    摘要： An autoclavable battery for use with electrical equipment in operative procedures includes a series of electrochemical cells surrounded by insulation and hermetically sealed in a battery case. The insulation has a thickness and thermal conductivity effective to prevent the cells from reaching their venting temperature when subjected to autoclave conditions.

    摘要翻译： 用于与电气设备在操作程序中使用的可高压灭菌的电池包括一系列电绝缘并被气密密封在电池盒中的电化学电池。 绝缘体具有有效的阻挡细胞在经受高压灭菌条件时达到其通气温度的厚度和导热性。

    System for expressing complex data relationships using simple language constructs
    4.
    发明授权
    System for expressing complex data relationships using simple language constructs 失效
    使用简单语言结构表达复杂数据关系的系统

    公开(公告)号：US06510551B1

    公开(公告)日：2003-01-21

    申请号：US09218871

    申请日：1998-12-22

    申请人： David L. Miller

    发明人： David L. Miller

    IPC分类号： G06F944

    CPC分类号： G06F9/4493 ,  G06F9/4488

    摘要： A programming environment including a source code programming language comprising a plurality of programming constructs. A first set of constructs within the programming language are for expressing procedural operations performed on specified data. A second set of constructs within the programming language are for expressing complex data relationships of the specified data. A compiler receives programmed source code comprising user-selected and arranged portions of the first and second set of constructs and generating machine readable code capable of implementing the procedural operations and complex data relationships expressed by the source code.

    摘要翻译： 一种编程环境，包括包含多个编程结构的源代码编程语言。 编程语言中的第一组构造用于表示对指定数据执行的过程操作。 编程语言中的第二组构造用于表示指定数据的复杂数据关系。 编译器接收编程的源代码，其包括第一和第二组构造的用户选择和排列的部分，并且生成能够实现由源代码表示的过程操作和复数数据关系的机器可读代码。

    Rapid response vapor source
    5.
    发明授权
    Rapid response vapor source 失效
    快速反应蒸气源

    公开(公告)号：US5558720A

    公开(公告)日：1996-09-24

    申请号：US584288

    申请日：1996-01-11

    申请人： David B. Sarraf ,  David L. Miller

    发明人： David B. Sarraf ,  David L. Miller

    IPC分类号： C23C14/24 ,  C30B23/06 ,  C23C14/00

    CPC分类号： C30B23/066 ,  C23C14/243

    摘要： The apparatus is a rapid response evaporator for material deposition in vapor. The structure is a vessel which is heated to a temperature just above the melting temperature of the liquid which it contains. Inserted into the heated liquid is a funnel shaped evaporator structure in which the vertical tube is a capillary structure to raise the heated liquid from the vessel. The upper diverging portion of the evaporator contains a porous capillary interior coating in contact with the capillary tube, and the exterior is independently heated. Because of the low thermal mass of the upper portion of the evaporator and the liquid in its capillary structure, it can respond to heat changes quickly enough to rapidly vary the rate of evaporation and the thickness of the deposited coating.

    摘要翻译： 该装置是用于蒸气中物质沉积的快速响应蒸发器。 该结构是一种容器，其被加热到刚好高于其含有的液体的熔融温度的温度。 插入加热液体中的是漏斗形蒸发器结构，其中垂直管是毛细管结构，以使来自容器的加热液体升高。 蒸发器的上部分歧部分包含与毛细管接触的多孔毛细管内部涂层，并且外部被独立加热。 由于蒸发器上部的热质量低，其毛细结构中的液体的热质量低，因此可快速响应热变化，从而快速地改变蒸发速率和沉积涂层的厚度。

    Cable jacket strain relief adapter assembly
    7.
    发明授权
    Cable jacket strain relief adapter assembly 失效
    电缆护套应变消除适配器组件

    公开(公告)号：US4840581A

    公开(公告)日：1989-06-20

    申请号：US288747

    申请日：1988-12-22

    申请人： Walter P. Leufert ,  David L. Miller

    发明人： Walter P. Leufert ,  David L. Miller

    IPC分类号： H01R13/595

    CPC分类号： H01R13/595

    摘要： An adapter assembly is fastened to a preexisting electrical connector assembly having a pair of cover members defining the cable exit. The adapter assembly includes a pair of clamping members which clamp against the cable jacket for strain relief, and the clamping members are fastened to a mounting member which itself is mounted across the cable exit between inwardly facing surface portions of the cover members and secured by the fasteners which previously secured the cover members to each other. The adapter assembly enables an assured strain relief mechanism for a larger dimensioned cable than that for which the preexisting connector was intended. The mounting member can cooperate with the strain relief surfaces previously defined on the cover members at the cable exit to provide a strain relief slightly compressing the conductors arranged in two bundles passing on either side of the mounting member.

    摘要翻译： 适配器组件固定到具有限定电缆出口的一对盖构件的预先存在的电连接器组件。 适配器组件包括一对夹紧构件，其夹紧电缆护套以进行应变消除，并且夹紧构件紧固到安装构件，该安装构件本身穿过电缆出口安装在盖构件的面向内的表面部分之间， 先前将盖构件彼此固定的紧固件。 适配器组件能够为预先存在的连接器预期的尺寸较大的电缆提供可靠的应变消除机构。 安装构件可以与先前在电缆出口处的盖构件上限定的应变消除表面配合，以提供一种应力消除，其轻微地压缩布置在穿过安装构件的任一侧上的两个束中的导体。

    Lateral bipolar transistor
    8.
    发明授权
    Lateral bipolar transistor 失效
    侧面双极晶体管

    公开(公告)号：US4775882A

    公开(公告)日：1988-10-04

    申请号：US932239

    申请日：1986-11-19

    申请人： David L. Miller ,  Peter M. Asbeck

    发明人： David L. Miller ,  Peter M. Asbeck

    IPC分类号： H01L29/04 ,  H01L29/207 ,  H01L29/735 ,  H01L29/72 ,  H01L27/12 ,  H01L29/161

    CPC分类号： H01L29/045 ,  H01L29/207 ,  H01L29/735

    摘要： Silicon doping of GaAs provides n conductivity in {100} planes and p conductivity in {111} A planes. A split level of Si-doped GaAs utilizes this phenomena to provide a bipolar transistor. In one embodiment, the emitter is one level of the layer in the {100} planes, and the collector is another level of the layer in the {100} planes. These n conductivity levels are joined by {111} A planes to form a p conductivity base. The junctions in the layer between the {100} planes and the {111} A planes form an npn transistor.

    摘要翻译： GaAs的硅掺杂在{100}面中提供n导电性，并且在{111} A平面中提供p导电性。 分立级别的Si掺杂GaAs利用这种现象来提供双极晶体管。 在一个实施例中，发射器是{100}平面中的层的一个等级，并且集电极是{100}平面中的层的另一个层。 这些n个电导率水平通过{111} A平面连接以形成p电导率基底。 {100}面和{111} A平面之间的层中的结形成npn晶体管。

    Method of selected area doping of compound semiconductors
    9.
    发明授权
    Method of selected area doping of compound semiconductors 失效
    化合物半导体选区面积掺杂方法

    公开(公告)号：US4470192A

    公开(公告)日：1984-09-11

    申请号：US524967

    申请日：1983-08-22

    申请人： David L. Miller

    发明人： David L. Miller

    IPC分类号： H01L21/203 ,  H01L21/225 ,  C23C13/08

    CPC分类号： H01L21/2258 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02658 ,  Y10S148/084

    摘要： A method is provided for selectively doping a compound semiconductor such as GaAs in situ by molecular beam epitaxy. The surface of the GaAs is coated with a thin layer of As by exposing it to an arsenic flux within a molecular beam epitaxy chamber. Selected areas of the surface are irradiated with a laser beam or a beam of photons, electrons, or ions in order to desorb As and form a mask of As on the surface. Dopant material such as tin is then deposited over the surface and As mask. The semiconductor is then heated to desorb the As mask while leaving the dopant in the unmasked areas. An epitaxial layer of GaAs is then grown over the surface by molecular beam epitaxy.

    摘要翻译： 提供了通过分子束外延选择性地掺杂诸如GaAs的化合物半导体的方法。 通过将GaAs暴露于分子束外延室内的砷通量，GaAs的表面涂覆有薄层的As。 用激光束或光束，电子或离子束照射表面的选定区域以解吸As并在表面上形成As掩模。 然后将诸如锡的掺杂材料沉积在表面和As掩模上。 然后加热半导体以解吸As掩模，同时将未掺杂区域中的掺杂剂留下。 然后通过分子束外延在表面上生长GaAs的外延层。