公开(公告)号：US20080268707A1

公开(公告)日：2008-10-30

申请号：US11596781

申请日：2006-06-28

申请人： Hongbin Wu ,  Dong Yang ,  Wei Fang ,  Fengwei Tian ,  Facan Feng

发明人： Hongbin Wu ,  Dong Yang ,  Wei Fang ,  Fengwei Tian ,  Facan Feng

IPC分类号： H01R13/658

CPC分类号： H01R13/6581 ,  H01R13/6595 ,  H01R24/60 ,  H01R2107/00

摘要： The present invention relates to a high density connector plug, comprising the body of plug and a plastic enclosure for fixing said body of plug and being connected with the cable. Said body of plug comprises a shielding shell, an insulator mounted in said shielding shell, and a set of contacts provided on the side of said insulator; said insulator comprising a base and upper plastic body and lower plastic body extending outwards from one side of said base, which have slots for mounting said contacts. Thus the interface footprint of plug and socket is reduced and the pin density is increased, thereby the volume of the corresponding device is significantly reduced, so that the devices have a trend towards miniature and high density. In addition, there is a stepped welding area provided on the insulator, so that the contacts can be connected to the cable by welding, and there is visibility in the cable welding, thereby the working efficiency is improved.

摘要翻译： 高密度连接器插头技术领域本发明涉及一种高密度连接器插头，包括插头体和塑料外壳，用于固定插头本体并与电缆连接。 所述插头体包括屏蔽壳体，安装在所述屏蔽壳体中的绝缘体和设置在所述绝缘体侧面上的一组触点; 所述绝缘体包括基部和上部塑料体以及从所述基部的一侧向外延伸的下部塑料体，所述底部具有用于安装所述触点的槽。 因此，插头和插座的接口占地面积减小，并且引脚密度增加，从而相应设备的体积显着减小，使得器件具有微型和高密度的趋势。 此外，在绝缘体上设置有台阶焊接区域，使得触点可以通过焊接连接到电缆，并且在电缆焊接中具有可见性，从而提高了工作效率。

公开(公告)号：US07585189B2

公开(公告)日：2009-09-08

申请号：US11596781

申请日：2006-06-28

申请人： Hongbin Wu ,  Dong Yang ,  Wei Fang ,  Fengwei Tian ,  Facan Feng

发明人： Hongbin Wu ,  Dong Yang ,  Wei Fang ,  Fengwei Tian ,  Facan Feng

IPC分类号： H01R24/00

CPC分类号： H01R13/6581 ,  H01R13/6595 ,  H01R24/60 ,  H01R2107/00

摘要： The present invention relates to a high density connector plug, comprising the body of plug and a plastic enclosure for fixing said body of plug and being connected with the cable. Said body of plug comprises a shielding shell, an insulator mounted in said shielding shell, and a set of contacts provided on the side of said insulator; said insulator comprising a base and upper plastic body and lower plastic body extending outwards from one side of said base, which have slots for mounting said contacts. Thus the interface footprint of plug and socket is reduced and the pin density is increased, thereby the volume of the corresponding device is significantly reduced, so that the devices have a trend towards miniature and high density. In addition, there is a stepped welding area provided on the insulator, so that the contacts can be connected to the cable by welding, and there is visibility in the cable welding, thereby the working efficiency is improved.

摘要翻译： 高密度连接器插头技术领域本发明涉及一种高密度连接器插头，包括插头体和塑料外壳，用于固定插头本体并与电缆连接。 所述插头体包括屏蔽壳体，安装在所述屏蔽壳体中的绝缘体和设置在所述绝缘体侧面上的一组触点; 所述绝缘体包括基部和上部塑料体以及从所述基部的一侧向外延伸的下部塑料体，所述底部具有用于安装所述触点的槽。 因此，插头和插座的接口占地面积减小，并且引脚密度增加，从而相应设备的体积显着减小，使得器件具有微型和高密度的趋势。 此外，在绝缘体上设置有台阶焊接区域，使得触点可以通过焊接连接到电缆，并且在电缆焊接中具有可见性，从而提高了工作效率。

公开(公告)号：US07713085B2

公开(公告)日：2010-05-11

申请号：US11357642

申请日：2006-02-17

申请人： Hongbin Wu ,  Dong Yang ,  Wei Fang ,  Fengwei Tian ,  Facan Feng

发明人： Hongbin Wu ,  Dong Yang ,  Wei Fang ,  Fengwei Tian ,  Facan Feng

IPC分类号： H01R13/60

CPC分类号： H01R12/716 ,  H01R13/6215 ,  H01R13/6456

摘要： The present invention provides a connector interface comprising a connector socket interface and a connector plug interface, the connector socket interface comprising metal shell, insulator, band-shaped recess provided on said insulator and metal contacts and the connector plug interface comprising metal shell, insulator, and band-shaped protrusion provided on said insulator and metal contacts, said connector socket interface and said connector plug interface being able to be coupled together, wherein: said connector socket interface has a plurality of band-shaped recesses and said connector plug interface has a plurality of band-shaped protrusions. In a connector interface with the same number of metal pieces according to an embodiment of the present invention, the footprint of the coupling part is reduced, the footprint per pair of contacts is reduced, and the objective of increasing the pin density of the contacts in a connector is achieved.

摘要翻译： 本发明提供了一种连接器接口，其包括连接器插座接口和连接器插头接口，所述连接器插座接口包括金属壳，绝缘体，设置在所述绝缘体上的带状凹部和金属触点以及包括金属壳，绝缘体， 以及设置在所述绝缘体和金属触点上的带状突起，所述连接器插座接口和所述连接器插头接口能够耦合在一起，其中：所述连接器插座接口具有多个带状凹部，并且所述连接器插头接口具有 多个带状突起。 在根据本发明的实施例的具有相同数量的金属片的连接器接口中，耦合部分的占地面积减小，每对触点的占地面积减小，并且增加触点的引脚密度 实现连接器。

公开(公告)号：US20080132111A1

公开(公告)日：2008-06-05

申请号：US11357642

申请日：2006-02-17

申请人： Hongbin Wu ,  Dong Yang ,  Wei Fang ,  Fengwei Tian ,  Facan Feng

发明人： Hongbin Wu ,  Dong Yang ,  Wei Fang ,  Fengwei Tian ,  Facan Feng

IPC分类号： H01R13/04 ,  H01R24/00 ,  H01R3/00

CPC分类号： H01R12/716 ,  H01R13/6215 ,  H01R13/6456

摘要： The present invention provides a connector interface comprising a connector socket interface and a connector plug interface, the connector socket interface comprising metal shell, insulator, band-shaped recess provided on said insulator and metal contacts and the connector plug interface comprising metal shell, insulator, and band-shaped protrusion provided on said insulator and metal contacts, said connector socket interface and said connector plug interface being able to be coupled together, wherein: said connector socket interface has a plurality of band-shaped recesses and said connector plug interface has a plurality of band-shaped protrusions. In a connector interface with the same number of metal pieces according to an embodiment of the present invention, the footprint of the coupling part is reduced, the footprint per pair of contacts is reduced, and the objective of increasing the pin density of the contacts in a connector is achieved.

摘要翻译： 本发明提供了一种连接器接口，其包括连接器插座接口和连接器插头接口，所述连接器插座接口包括金属壳，绝缘体，设置在所述绝缘体上的带状凹部和金属触点以及包括金属壳，绝缘体， 以及设置在所述绝缘体和金属触点上的带状突起，所述连接器插座接口和所述连接器插头接口能够耦合在一起，其中：所述连接器插座接口具有多个带状凹部，并且所述连接器插头接口具有 多个带状突起。 在根据本发明的实施例的具有相同数量的金属片的连接器接口中，耦合部分的占地面积减小，每对触点的占地面积减小，并且增加触点的引脚密度 实现连接器。

公开(公告)号：US09178386B2

公开(公告)日：2015-11-03

申请号：US13497512

申请日：2009-12-09

申请人： Gang Duan ,  Jingtao Wu ,  Xiaoyan Sun ,  Dong Yang

发明人： Gang Duan ,  Jingtao Wu ,  Xiaoyan Sun ,  Dong Yang

IPC分类号： H02J13/00 ,  G01R19/25

CPC分类号： H02J13/0006 ,  G01R19/2513 ,  Y02E60/728 ,  Y02E60/74 ,  Y04S10/265 ,  Y04S10/30

摘要： A state-matrix-independent dynamic process estimation method in real-time for weakly observable measurement nodes without Phasor Measurement Unit(PMU) is only dependent on real-time measurement dynamic data of measurement nodes with PMU and measurement data of Supervisory Control And Data Acquisition (SCADA) system in electric power system or state estimation data. According to the SCADA measurement data or state estimation data at some continuous moments, the method utilizes recursive least squares solution to find a linear combination relationship between variation of measurement parameter to be estimated of nodes without PMU and variation of corresponding measurement parameter of nodes with PMU. Using the linear combination of relationship, the dynamic process of measurement nodes without PMU is estimated in real-time. The method provides high estimation precision and meets error requirements of engineering application.

摘要翻译： 弱相关测量单元（PMU）的弱观测测量节点的状态矩无关动态过程估计方法仅取决于PMU测量节点与监控和数据采集测量数据的实时测量动态数据 （SCADA）系统或状态估计数据。 根据SCADA测量数据或某些连续时刻的状态估计数据，该方法利用递归最小二乘解求解PMU节点测量参数变化与PMU节点对应测量参数变化之间的线性组合关系 。 使用线性关系的组合，实时估计无PMU的测量节点的动态过程。 该方法提供高估计精度，满足工程应用的误差要求。

公开(公告)号：US08976925B2

公开(公告)日：2015-03-10

申请号：US12618357

申请日：2009-11-13

申请人： Ruola Ning ,  Dong Yang

发明人： Ruola Ning ,  Dong Yang

IPC分类号： A61B6/03 ,  G06T11/00 ,  A61B6/04 ,  A61B6/00 ,  A61B6/02

CPC分类号： G06T11/006 ,  A61B6/027 ,  A61B6/032 ,  A61B6/0435 ,  A61B6/502 ,  Y10S378/901

摘要： A cone-beam scanning system scans along a half circle. The reconstruction uses a weighting function which decreases for rows farther from the scan plane to take the redundancy of the projection data into account. Another embodiment uses a circle plus sparse helical scan geometry. Image data can be taken in real time.

摘要翻译： 锥形束扫描系统沿半圆扫描。 重建使用对于距离扫描平面更远的行减小的加权函数来考虑投影数据的冗余度。 另一个实施例使用圆加稀疏螺旋扫描几何。 图像数据可以实时拍摄。

公开(公告)号：US08877594B2

公开(公告)日：2014-11-04

申请号：US13509170

申请日：2011-11-30

申请人： Ru Huang ,  Fei Tan ,  Xia An ,  Qianqian Huang ,  Dong Yang ,  Xing Zhang

发明人： Ru Huang ,  Fei Tan ,  Xia An ,  Qianqian Huang ,  Dong Yang ,  Xing Zhang

IPC分类号： H01L21/00 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/6653 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/7833

摘要： A CMOS device for reducing a radiation-induced charge collection and a method for fabricating the same. In the CMOS device, a heavily doped charge collection-suppressed region is disposed directly under the source region and the drain region. The region has a doping type opposite that of the source region and the drain region, and has a doping concentration not less than that of the source region and the drain region. The charge collection-suppressed region has a lateral part slightly less than or equal to that of the source region and the drain region, and has a lateral range toward to the channel not exceed the edges of the source region and the drain region. The CMOS device may greatly reduce a range of the funnel that appears under the action of a single particle, so that charges collected instantaneously under a force of an electric field may be reduced.

摘要翻译： 用于减少辐射诱导的电荷收集的CMOS器件及其制造方法。 在CMOS器件中，重掺杂电荷收集抑制区域直接设置在源极区域和漏极区域的正下方。 该区域具有与源极区域和漏极区域相反的掺杂类型，并且具有不小于源极区域和漏极区域的掺杂浓度。 电荷收集抑制区域具有稍小于或等于源极区域和漏极区域的横向部分，并且具有朝向沟道的横向范围不超过源极区域和漏极区域的边缘。 CMOS器件可以大大减少在单个粒子的作用下出现的漏斗的范围，使得可以在电场的力作用下立即收集的电荷减少。

公开(公告)号：US08705828B2

公开(公告)日：2014-04-22

申请号：US13222461

申请日：2011-08-31

申请人： Dong Yang ,  Nathan J. Packard

发明人： Dong Yang ,  Nathan J. Packard

IPC分类号： G06K9/00 ,  A61B6/00

CPC分类号： G06T11/005 ,  A61B6/032 ,  A61B6/4085 ,  A61B6/466

摘要： Embodiments of methods and/or apparatus for 3-D volume image reconstruction of a subject, executed at least in part on a computer for use with a digital radiographic apparatus can obtain image data for 2-D projection images over a range of scan angles. For each of the plurality of projection images, an enhanced projection image can be generated. In one embodiment, through the application of a resolution increasing interpolator, a prescribed CBCT routine scanning mode with preset binning can increase a spatial resolution, Nyquist frequency or MTF.

摘要翻译： 至少部分地在与数字放射线照相设备一起使用的计算机上执行的被摄体的3-D体积图像重建的方法和/或设备的实施例可以在扫描角度范围内获得用于2-D投影图像的图像数据。 对于多个投影图像中的每一个，可以生成增强的投影图像。 在一个实施例中，通过应用分辨率增加内插器，具有预定分档的规定CBCT例程扫描模式可以增加空间分辨率奈奎斯特频率或MTF。

公开(公告)号：US08652929B2

公开(公告)日：2014-02-18

申请号：US13582034

申请日：2012-04-16

申请人： Ru Huang ,  Fei Tan ,  Xia An ,  Qianqian Huang ,  Dong Yang ,  Xing Zhang

发明人： Ru Huang ,  Fei Tan ,  Xia An ,  Qianqian Huang ,  Dong Yang ,  Xing Zhang

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/3063 ,  H01L21/84

CPC分类号： H01L21/02203 ,  H01L21/02216 ,  H01L21/3063 ,  H01L21/823878 ,  H01L27/0921

摘要： The present invention discloses a CMOS device of reducing charge sharing effect and a fabrication method thereof. The present invention has an additional isolation for trapping carriers disposed right below an isolation region. the material of the additional isolation region is porous silicon. Since porous silicon is a functional material of spongy structure by electrochemistry anodic oxidizing monocrystalline silicon wafer, there are a large number of microvoids and dangling bonds on the surface layer of the porous silicon. These defects may form defect states in a center of forbidden band of the porous silicon, the defect states may trap carriers so as to cause an increased resistance. And with an increase of density of corrosion current, porosity increases, and defects in the porous silicon increase. The present invention can reduce the charge sharing effect due to heavy ions by using a feature that the defect states in the porous silicon trap carriers, the formation of a shallow trench isolation (STI) region and a isolation region underneath only needs one time photolithography, and the process is simple, so that radioresistance performance of an integrated circuit may be greatly increased.

摘要翻译： 本发明公开了一种降低电荷共享效应的CMOS器件及其制造方法。 本发明对于设置在隔离区域正下方的捕获载体具有额外的隔离。 附加隔离区的材料是多孔硅。 由于多孔硅是通过电化学阳极氧化单晶硅晶片的海绵结构的功能材料，因此在多孔硅的表面层上存在大量微孔和悬挂键。 这些缺陷可能在多孔硅的禁带的中心形成缺陷状态，缺陷状态可能会捕获载体以引起增加的电阻。 随着腐蚀电流密度的增加，孔隙率增加，多孔硅中的缺陷增加。 本发明可以通过使用多孔硅捕集载体中的缺陷状态，浅沟槽隔离（STI）区域的形成和下面的隔离区域仅需要一次光刻来降低由于重离子引起的电荷共享效应， 并且该工艺简单，从而可以大大提高集成电路的射电阻性能。

公开(公告)号：US20130259193A1

公开(公告)日：2013-10-03

申请号：US13438079

申请日：2012-04-03

申请人： Nathan J. Packard ,  Samuel Richard ,  Dong Yang

发明人： Nathan J. Packard ,  Samuel Richard ,  Dong Yang

IPC分类号： A61B6/04

CPC分类号： A61B6/025 ,  A61B6/0414 ,  A61B6/502

摘要： An apparatus for imaging a breast of a patient has a gantry with a radiation source and a sensor, the source and sensor rotatable in an arcuate orbit about a central axis and within a plane of revolution, wherein the arcuate orbit spans more than 180 degrees and less than 360 degrees, and wherein the gantry has a gantry cover that is disposed to be in contact with at least the chest wall of the patient. The gantry cover has a central opening about the central axis for insertion of the breast that is to be imaged and a peripheral cutout portion that defines the end-points of the arcuate orbit and that provides a space for positioning a portion of the patient's anatomy.

摘要翻译： 用于对患者的乳房进行成像的装置具有具有辐射源和传感器的机架，所述源和传感器可围绕中心轴线且在旋转平面内围绕弧形轨道旋转，其中所述弓形轨道跨越180度以上， 小于360度，并且其中，所述台架具有设置成与至少所述患者的胸壁接触的龙门架盖。 台架盖具有围绕中心轴线的中心开口，用于插入待成像的乳房，以及限定弓形轨道的端点的周边切口部分，并且提供用于定位患者解剖结构的一部分的空间。