公开(公告)号：US4849800A

公开(公告)日：1989-07-18

申请号：US98086

申请日：1987-09-18

申请人： C. Christiaan Abbas ,  Jens Gobrecht ,  Jan Voboril ,  Horst Gruning

发明人： C. Christiaan Abbas ,  Jens Gobrecht ,  Jan Voboril ,  Horst Gruning

IPC分类号： H01L29/744 ,  H01L29/06 ,  H01L29/08 ,  H01L29/74

CPC分类号： H01L29/0834 ,  H01L24/32 ,  H01L29/0657 ,  H01L2224/32245 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/10158 ,  H01L2924/1301 ,  H01L2924/1306 ,  H01L2924/13091

摘要： In a semiconductor component, which has various differently doped layers (2, 3, 4, 5) within a semiconductor substrate, an improvement of the electrical properties is achieved, wherein the thickness of the substrate in the current-carrying region is locally reduced by a deep etch well (10), the original mechanical stability of the semiconductor substrate largely remaining retained.

摘要翻译： 在半导体衬底内具有各种不同掺杂层（2,3,4,5）的半导体元件中，实现了电性能的改进，其中载流区中衬底的厚度被局部地减少 深蚀刻井（10），半导体衬底的原始机械稳定性大大保持不变。

公开(公告)号：US6072200A

公开(公告)日：2000-06-06

申请号：US34993

申请日：1998-03-05

申请人： Horst Gruning ,  Enrico Piccioni

发明人： Horst Gruning ,  Enrico Piccioni

IPC分类号： H01L29/74 ,  H01L21/52 ,  H01L23/051 ,  H01L23/34 ,  H01L23/36 ,  H01L23/64 ,  H01L29/744 ,  H01L29/41

CPC分类号： H01L23/36 ,  H01L23/051 ,  H01L23/642 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/3011

摘要： In a gate unit (47) for a hard-driven GTO (10), at least some of the electronic components (37, . . , 42) needed for driving are arranged on a printed circuit board (34). The printed circuit board (34) encloses the GTO (10), in order to achieve low-inductance contact, in a plane lying between the anode side and the cathode side of the GTO (10) parallel to the semiconductor substrate (17) of the GTO (10) and is directly connected to the cathode contact (14) and the gate connection (22) of the GTO (10). A compact structure with, at the same time, improved mechanical stability is achieved in such a gate unit in that the components (37, . . , 42) are arranged on the printed circuit board (34) around the GTO (10), in the immediate vicinity of the GTO (10).

摘要翻译： 在用于硬驱动GTO（10）的门单元（47）中，驱动所需的至少一些电子部件（37，...，42）布置在印刷电路板（34）上。 印刷电路板（34）包围GTO（10），以便在平行于半导体衬底（17）的GTO（10）的阳极侧和阴极侧之间的平面中实现低电感接触 GTO（10）并且直接连接到GTO（10）的阴极触点（14）和栅极连接（22）。 在这种门单元中，同时实现了改善的机械稳定性的紧凑结构，因为部件（37，...）42围绕GTO（10）布置在印刷电路板（34）上，在 GTO（10）附近。

公开(公告)号：US5493247A

公开(公告)日：1996-02-20

申请号：US39398

申请日：1993-04-28

申请人： Horst Gruning

发明人： Horst Gruning

IPC分类号： H03K17/732 ,  H03K17/56

CPC分类号： H03K17/732

摘要： In a circuit for hard driving a GTO, the conductor inductance (L1) and the internal inductance of the GTO (L2) form, together with a first capacitor (C1) situated in parallel via a switch (S), a series resonance circuit inside the gate circuit. In this connection, the chosen sizes of the first capacitor (C1) and of the first inductance (L1) are such that, if the first capacitor (C1) discharges via the two inductances (L1, L2), the gate current originating from the first capacitor (C1) exceeds half the value of a GTO anode current to be turned off within less than 5 .mu.s in the first quarter cycle of the series oscillatory circuit. Moreover, first means are provided which uncouple the first capacitor (C1) from the generation of the gate current after the first quarter cycle of the resonance circuit and allows the gate current to decay slowly in such a way that, at any time, it is greater than the tail current of the GTO. Finally, second means are provided in the form of a recharging circuit, which means are activated during the decay of the gate current and apply a holding current (V.sub.H) which is sufficient for blocking the gate (G) of the GTO after the decay of the gate current.

摘要翻译： PCT No.PCT / CH92 / 00222 Sec。 371日期：1993年4月28日 102（e）日期1993年4月28日PCT提交1992年10月30日PCT公布。 公开号WO93 / 09600 日期：1993年5月5日。在用于硬驱动GTO的电路中，导体电感（L1）和GTO（L2）的内部电感与通过开关（S）并联设置的第一电容器（C1） ，门电路内的串联谐振电路。 在这方面，第一电容器（C1）和第一电感（L1）的所选尺寸使得如果第一电容器（C1）经由两个电感（L1，L2）放电，则源于 在串联振荡电路的第一个四分之一周期内，第一电容器（C1）超过了在小于5μs内关断的GTO阳极电流值的一半。 此外，提供了第一装置，其将第一电容器（C1）与谐振电路的第一个四分之一周期之后的栅极电流的产生断开，并且允许栅极电流缓慢衰减，使得在任何时候它是 大于GTO的尾流。 最后，以充电电路的形式提供第二装置，这意味着在栅极电流衰减期间被激活，并施加足以阻止GTO的栅极（G）的保持电流（VH） 栅极电流。

公开(公告)号：US4885657A

公开(公告)日：1989-12-05

申请号：US288272

申请日：1988-12-22

申请人： Horst Gruning

发明人： Horst Gruning

IPC分类号： H01L29/744 ,  H01L29/74 ,  H03K17/082

CPC分类号： H03K17/0824

摘要： In a thyristor with turn-off facility (AT) and overvoltage protection, the voltage limitation is achieved by a parallel-connected controllable resistor, in particular in the form of a J-FET (JF) which is driven by an overvoltage sensor (OS).The separation of sensor function and bypass function produce advantages for a simple and compact construction.

摘要翻译： 在具有关断设备（AT）和过电压保护的晶闸管中，电压限制由并联可控电阻器实现，特别是以过电压传感器（OS）驱动的J-FET（JF）形式 ）。 传感器功能和旁路功能的分离产生了简单紧凑结构的优点。

公开(公告)号：US4862239A

公开(公告)日：1989-08-29

申请号：US93607

申请日：1987-09-08

申请人： Bruno Broich ,  Horst Gruning

发明人： Bruno Broich ,  Horst Gruning

IPC分类号： H01L23/482 ,  H01L25/18 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/739 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L29/0657 ,  H01L23/4824 ,  H01L24/32 ,  H01L25/18 ,  H01L29/0839 ,  H01L29/41716 ,  H01L29/7392 ,  H01L29/744 ,  H01L2224/05553 ,  H01L2224/32014 ,  H01L2224/48137 ,  H01L2224/48463 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/12035 ,  H01L2924/1301 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/351

摘要： In a power semiconductor component having a so-called "recessed-gate" structure on the cathode side, the large-area control structure consisting of cathode fingers (1) and a lower-lying gate level (2) is divided into a plurality of small-area control zones (25a, 25b) which in each case by themselves are soldered to a cathode block (13a, 13b). This creates high-power components without the possibility of excessive thermal stresses occurring during load cycles.

摘要翻译： 在阴极侧具有所谓“凹栅”结构的功率半导体元件中，由阴极指（1）和下位栅层（2）构成的大面积控制结构分为多个 在每种情况下，它们自身被焊接到阴极块（13a，13b）上的小区域控制区（25a，25b）。 这产生了大功率元件，而不会在负载循环期间发生过大的热应力。

公开(公告)号：US6166456A

公开(公告)日：2000-12-26

申请号：US218307

申请日：1998-12-22

申请人： Horst Gruning

发明人： Horst Gruning

IPC分类号： H02J9/06 ,  H01H37/00

CPC分类号： H02J9/06 ,  Y10T307/615 ,  Y10T307/766

摘要： The invention specifies a disconnector for decoupling a load from a supplying AC voltage network. The disconnector comprises at least one disconnector stage having a series circuit comprising at least two reverse-conducting gate turn-off thyristors which are connected cathode to cathode. The gate turn-off thyristors are preferably hard driven. This allows the use of a single circuit capacitor in parallel with the series-connected gate turn-off thyristors. This embodiment has the advantage that, during disconnection, the current commutates early from the gate turn-off thyristors, which means that the disconnection capacity can be increased.

摘要翻译： 本发明规定了用于将负载与供电AC电压网络分离的隔离开关。 隔离开关包括至少一个断路器级，其具有串联电路，串联电路包括至少两个正极与阴极连接的反向导通栅极截止晶闸管。 栅极截止晶闸管优选是硬驱动的。 这允许使用与串联连接的栅极截止晶闸管并联的单个电路电容器。 该实施例的优点在于，在断开期间，电流从栅极截止晶闸管的早期整流，这意味着可以提高断开容量。

公开(公告)号：US6052296A

公开(公告)日：2000-04-18

申请号：US921387

申请日：1997-08-29

申请人： Peter Dahler ,  Osvin Gaupp ,  Horst Gruning

发明人： Peter Dahler ,  Osvin Gaupp ,  Horst Gruning

IPC分类号： H02M7/48 ,  H02M7/49 ,  H02M7/00 ,  H02M1/12

CPC分类号： H02M7/49

摘要： A power converter circuit arrangement which comprises a first power converter and at least one further power converter is specified. The power converters are connected to the DC voltage intermediate circuit and feed a load circuit, in particular a single-phase railway grid. The or each further power converter has an output transformer on the load side. The secondary windings of the output transformers are connected in series with the primary winding of a load transformer, which feeds the load circuit, and the load-side terminals of a first power converter. This permits the turns ratios of the output transformers to be selected to be greater than or equal to one and said turns ratios between said output transformers to be selected to be gradated in a binary or ternary manner, for example. As a result, power converter stages having a gradated output voltage are available, and a finely stepped approximation to a sinusoidal output voltage can be achieved without the necessity of providing an uneconomically large number of stages.

摘要翻译： 规定了包括第一功率转换器和至少一个另外的功率转换器的功率转换器电路装置。 电力转换器连接到直流电压中间电路，并馈送负载电路，特别是单相铁路电网。 该或每个其他功率转换器在负载侧具有输出变压器。 输出变压器的次级绕组与负载变压器的初级绕组串联，负载变压器的负载电路和第一功率转换器的负载侧端子。 这允许输出变压器的匝数比被选择为大于或等于1，并且所述输出变压器之间的所述匝数比被选择为以二进制或三元方式分级。 结果，可以获得具有等级输出电压的功率转换器级，并且可以实现对正弦输出电压的精细级近似，而不需要提供不经济的大量级。

公开(公告)号：US06009009A

公开(公告)日：1999-12-28

申请号：US55714

申请日：1998-04-07

申请人： Horst Gruning

发明人： Horst Gruning

IPC分类号： H02M1/08 ,  H02M1/12 ,  H02M7/00 ,  H02M7/04 ,  H02M7/12 ,  H02M7/521

CPC分类号： H02M7/003

摘要： A converter is specified which is distinguished in that a bus system is provided between the paths of a phase module of the converter and allows potential chambers to be formed around the semiconductor switches and/or the circuitry elements. The potential chambers surround the semiconductor switches and the circuitry elements. They comprise two longitudinal metal sheets which are arranged to be insulated from one another, in particular overlapping. In addition, transverse metal sheets may be provided, which are connected to the connections of the semiconductor switches and/or circuitry elements. The potential chambers result in each potential chamber having a potential difference which is only a fraction of the intermediate circuit voltage. The bus system carries out the insulation of the high potential difference corresponding to the intermediate circuit voltage.

摘要翻译： A转换器的特征在于，总线系统设置在转换器的相位模块的路径之间，并允许在半导体开关和/或电路元件周围形成电位室。 电位室围绕半导体开关和电路元件。 它们包括被布置为彼此绝缘，特别是重叠的两个纵向金属片。 此外，可以提供横向金属片，其连接到半导体开关和/或电路元件的连接。 电位室导致每个电位室具有仅为中间电路电压的一部分的电位差。 总线系统执行与中间电路电压对应的高电位差的绝缘。

公开(公告)号：US5731967A

公开(公告)日：1998-03-24

申请号：US670646

申请日：1996-06-26

申请人： Horst Gruning

发明人： Horst Gruning

IPC分类号： H02M7/162 ,  H02H9/00 ,  H02M1/34 ,  H02M7/12 ,  H02M7/519 ,  H03K17/0814 ,  H02H7/122

CPC分类号： H02M1/34 ,  H02M7/519 ,  H02M2001/346 ,  Y02B70/1491

摘要： A converter circuit arrangement in which the gate turn-off thyristors are driven hard, i.e., the GTO is driven with a gate current configured in such a way that the turn-off gain IS/IGpeak is distinctly less than 3 so as to result in an anode voltage rise of at least 1 kV/.mu.s. The snubber circuit of such driven thyristors may be designed to include only a small number of elements. The voltage rise limiter includes at least one capacitor connected in parallel with one of the reverse-connected parallel diodes. The current rise limiter includes a parallel circuit having an inductor and a current limiting diode.

摘要翻译： A转换器电路装置，其中栅极关断晶闸管被驱动硬化，即GTO被驱动，栅极电流被配置成使得关断增益IS / IGpeak明显小于3，从而导致 至少1kV /μs的阳极电压上升。 这种驱动晶闸管的缓冲电路可以被设计为仅包括少量元件。 电压上限限幅器包括至少一个电容器并联连接到反向并联二极管之一。 电流上限限制器包括具有电感器和限流二极管的并联电路。

公开(公告)号：US5544035A

公开(公告)日：1996-08-06

申请号：US360624

申请日：1994-12-21

申请人： Conrad Beriger ,  Horst Gruning ,  Herbert Stemmler ,  Johannes Werninger

发明人： Conrad Beriger ,  Horst Gruning ,  Herbert Stemmler ,  Johannes Werninger

IPC分类号： H02M7/04 ,  H02M7/00 ,  H02M7/5387 ,  H02M7/515

CPC分类号： H02M7/003

摘要： A converter circuit arrangement is specified which is constructed to have a particularly low inductance. This is achieved by the circuit area of the commutation circuit being kept as small as possible. A circuit area which is as small as possible is achieved by the branch modules and switch modules of a phase module being arranged either in a U-shape or in a meandering shape. The branch modules can be arranged either parallel to or at right angles to a main direction, between the positive and negative connections and the load connection. In addition, it is advantageous if the power semiconductor switches and the reverse-connected parallel diodes and freewheeling diodes are arranged in separate stacks which are held together by means of a clamping-in device.

摘要翻译： A转换器电路布置被指定为具有特别低的电感。 这是通过使换向电路的电路面积保持尽可能小的方式实现的。 尽可能小的电路区域由相位模块的分支模块和开关模块实现为U形或曲折形状。 分支模块可以在正向和负向连接和负载连接之间平行或与主要方向成直角。 此外，有利的是，功率半导体开关和反向并联的二极管和续流二极管被布置在通过夹紧装置保持在一起的分开的堆叠中。