Apparatus and process to clean and strip coatings from hardware
    3.
    发明授权
    Apparatus and process to clean and strip coatings from hardware 有权
    从硬件清洗和剥离涂层的装置和工艺

    公开(公告)号:US06354310B1

    公开(公告)日:2002-03-12

    申请号:US09425556

    申请日:1999-10-22

    IPC分类号: B08B310

    摘要: Apparatus for stripping ceramic coatings from the surfaces of articles. The apparatus includes a dedicated pressure vessel, such as an autoclave, which is maintained at an elevated temperature. Caustic solution is preheated to a first elevated temperature before injecting it into the autoclave, and the caustic solution is filtered and cooled after use in the autoclave. The articles are stripped of coating by maintaining the articles at an elevated temperature and pressure for a predetermined time. Various options include the use of analytical equipment to maintain the chemistry of the caustic solution and use of a volatile organic solution to prepressurize the autoclave and shorten cycle time. The autoclave is maintained in a nitrogen chamber to minimize the risks associated with volatile components. The articles are transferred to a separate pressure vessel after completion of the stripping operation so that the autoclave used for stripping can be maintained at an elevated temperature, thereby shortening the cycle time for stripping of additional articles.

    摘要翻译: 用于从制品表面剥离陶瓷涂层的装置。 该设备包括保持在高温下的专用压力容器,例如高压釜。 苛性溶液在将其注射到高压釜中之前预热至第一升高温度,苛性碱溶液在使用后过滤并冷却。 通过将制品保持在升高的温度和压力下预定的时间,将制品剥离。 各种选择包括使用分析设备来维持苛性碱溶液的化学性质,并使用挥发性有机溶液对高压釜进行预压缩并缩短循环时间。 将高压釜保持在氮气室中以最小化与挥发性组分相关的风险。 在完成剥离操作之后将物品转移到单独的压力容器中,使得用于汽提的高压釜可以保持在升高的温度,从而缩短用于剥离附加制品的循环时间。

    Fluid filled electrical device with diagnostic sensor located in fluid circulation flow path
    4.
    发明授权
    Fluid filled electrical device with diagnostic sensor located in fluid circulation flow path 失效
    带有诊断传感器的流体填充电气设备位于流体循环流动路径中

    公开(公告)号:US06401518B1

    公开(公告)日:2002-06-11

    申请号:US09362866

    申请日:1999-07-29

    IPC分类号: H01F2712

    CPC分类号: H01F27/402 H01F27/12

    摘要: A fluid filled transformer including a tank for containing at least primary and secondary windings, a radiator connected to the tank via top and bottom headers, a fluid disposed in the tank, a fluid circulation flow path including passages through the windings, radiator, headers, and at least a portion of the tank, and at least one diagnostic sensor disposed within the fluid circulation flow path for measuring properties of the fluid. By positioning the sensor within the circulation flow path, measured values are more reliable, accurate, and efficiently sensed.

    摘要翻译: 一种流体填充的变压器,包括用于容纳至少初级和次级绕组的容器,经由顶部和底部集管连接到罐的散热器,设置在罐中的流体,流体循环流动路径,其包括通过绕组,散热器,集管, 和所述罐的至少一部分,以及设置在所述流体循环流动路径内的至少一个诊断传感器,用于测量所述流体的性质。 通过将传感器定位在循环流路内,测量值更可靠,准确,有效地被感测。

    Sensor device for detection of dissolved hydrocarbon gases in oil filled high-voltage electrical equipment
    5.
    发明授权
    Sensor device for detection of dissolved hydrocarbon gases in oil filled high-voltage electrical equipment 失效
    用于检测充油高压电气设备中溶解的烃类气体的传感器装置

    公开(公告)号:US07367217B2

    公开(公告)日:2008-05-06

    申请号:US11683739

    申请日:2007-03-08

    IPC分类号: G01N7/00 G01N9/00

    CPC分类号: G01N33/2841 G01N27/4141

    摘要: A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

    摘要翻译: 一种用于检测充油电气设备中溶解的烃类气体的多气体传感器装置。 所述器件包括半导体衬底,沉积在可操作以感测各种气体的半导体衬底的表面上的一个或多个催化金属栅电极和沉积在半导体衬底的表面上的欧姆接触。 半导体衬底包括GaN,SiC,AlN,InN,AlGaN,InGaN和AlInGaN中的一种。 一种用于感测电气设备的充满油的储存器中的气体的方法,包括提供传感器装置,将传感器装置浸入充满油的储存器中,允许从油中排出的气体与一个或多个催化金属栅极 - 电极,当气体接触催化金属栅电极时改变气体并改变传感器的灵敏度。

    Sensor device for detection of dissolved hydrocarbon gases in oil filled high-voltage electrical equipment
    6.
    发明授权
    Sensor device for detection of dissolved hydrocarbon gases in oil filled high-voltage electrical equipment 失效
    用于检测充油高压电气设备中溶解的烃类气体的传感器装置

    公开(公告)号:US07254986B2

    公开(公告)日:2007-08-14

    申请号:US10319359

    申请日:2002-12-13

    IPC分类号: G01N7/00 G01N9/00

    CPC分类号: G01N33/2841 G01N27/4141

    摘要: A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, lnN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

    摘要翻译: 一种用于检测充油电气设备中溶解的烃类气体的多气体传感器装置。 所述器件包括半导体衬底,沉积在可操作以感测各种气体的半导体衬底的表面上的一个或多个催化金属栅电极和沉积在半导体衬底的表面上的欧姆接触。 半导体衬底包括GaN,SiC,AlN,InN,AlGaN,InGaN和AlInGaN中的一种。 一种用于感测电气设备的充满油的储存器中的气体的方法,包括提供传感器装置,将传感器装置浸入充满油的储存器中,允许从油中排出的气体与一个或多个催化金属栅极 - 电极,当气体接触催化金属栅电极时改变气体并改变传感器的灵敏度。

    Flip-chip light emitting diode
    7.
    发明授权
    Flip-chip light emitting diode 失效
    倒装芯片发光二极管

    公开(公告)号:US07119372B2

    公开(公告)日:2006-10-10

    申请号:US10693126

    申请日:2003-10-24

    IPC分类号: H01L27/15

    摘要: A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).

    摘要翻译: 倒装芯片发光二极管管芯(10,10',10“)包括透光衬底(12,12',12”)和半导体层(14,14',14“),其被选择性地图案化 以限定装置台面(30,30',30“)。 反射电极(34,34',34“)设置在器件台面(30,30',30”)上。 反射电极(34,34',34“)包括设置在器件台面(30,30',30”)上方的透光绝缘栅极(42,42',60,80),欧姆材料 44,44',44“,62)设置在绝缘栅极(42,42',60,80)的开口处并与器件台面(30,30',30”)形成欧姆接触, 设置在绝缘栅极(42,42',60,80)上的导电反射膜(46,46',46“)和欧姆材料(44,44',44”,62)。 导电反射膜(46,46',46“)与欧姆材料(44,44',44”,62)电连通。

    Self-characterizing analog-to-digital converter
    8.
    发明授权
    Self-characterizing analog-to-digital converter 失效
    自定义模数转换器

    公开(公告)号:US4897650A

    公开(公告)日:1990-01-30

    申请号:US178045

    申请日:1988-04-05

    IPC分类号: H03M1/12 H03M1/00 H03M1/10

    CPC分类号: H03M1/109 H03M1/12

    摘要: An analog-to-digital converter macrocell architecture is provided with digital logic for accumulating code-density data for dynamic characterization of the converter. Each macrocell includes an A/D converter (10), a comparator (12), a bin counter (14), a clock counter (16), and a histogram counter (18). the code output of the A/D converter (10) is compared in the comparator (12) with the output of the bin counter (14) and each match increments the histogram counter (18). The histogram counter (18) accumulates code-density data for A/D converter dynamic characterization, these data being read once for every cycle of the clock counter (16).

    Methods of Manufacture for Quantum Dot optoelectronic devices with nanoscale epitaxial lateral overgrowth
    9.
    发明申请
    Methods of Manufacture for Quantum Dot optoelectronic devices with nanoscale epitaxial lateral overgrowth 审中-公开
    量子点光电子器件的制造方法,具有纳米外延横向过度生长

    公开(公告)号:US20090269868A1

    公开(公告)日:2009-10-29

    申请号:US12457923

    申请日:2009-06-25

    IPC分类号: H01L33/00 H01L21/20

    摘要: Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent “Stokes loss” in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.

    摘要翻译: 提供了在无机宽带隙异质结构中引入量子点作为电致发光层的光电器件。 量子点用作器件的光学活性成分,并且在多层量子点实施方案中,促进具有非晶格匹配衬底的异质结构中的纳米尺度外延横向过度生长(NELOG)。 与光泵浦和显示光致发光相反,这些器件中的量子点将被电泵浦并表现出电致发光。 在电致发光中没有固有的“斯托克斯损失”,因此本发明的器件比光泵浦量子点器件具有潜在的更高的效率。 由本发明产生的装置能够通过混合不同尺寸和组成的点并控制制造过程,提供深绿色可见光以及可见光谱中的任何其它颜色,包括白光。

    Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture
    10.
    发明授权
    Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture 有权
    量子点光电子器件具有纳米尺度的外延横向过度生长和制造方法

    公开(公告)号:US07554109B2

    公开(公告)日:2009-06-30

    申请号:US10933941

    申请日:2004-09-03

    IPC分类号: H01L29/205

    摘要: Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent “Stokes loss” in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.

    摘要翻译: 提供了在无机宽带隙异质结构中引入量子点作为电致发光层的光电器件。 量子点用作器件的光学活性成分,并且在多层量子点实施方案中,促进具有非晶格匹配衬底的异质结构中的纳米尺度外延横向过度生长(NELOG)。 与光泵浦和显示光致发光相反,这些器件中的量子点将被电泵浦并表现出电致发光。 在电致发光中没有固有的“斯托克斯损失”,因此本发明的器件比光泵浦量子点器件具有潜在的更高的效率。 由本发明产生的装置能够通过混合不同尺寸和组成的点并控制制造过程,提供深绿色可见光以及可见光谱中的任何其它颜色,包括白光。