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公开(公告)号：US5654580A
公开(公告)日：1997-08-05
申请号：US464981
申请日：1995-06-05
IPC分类号： C23F1/02 , G01J5/20 , H01L37/02 , H01L31/058
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译： 使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。 可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。 然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53） ）和触点（49,56,64）。
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2.发明授权Structure and method including dry etching techniques for forming an array of thermal sensitive elements 失效包括用于形成热敏元件阵列的干蚀刻技术的结构和方法
公开(公告)号：US5647946A
公开(公告)日：1997-07-15
申请号：US463170
申请日：1995-06-05
IPC分类号： G01J1/02 , G01J5/34 , H01L21/302 , H01L21/3065 , H01L27/14 , H01L37/02 , H01L21/00
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/942
摘要： An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).
摘要翻译： 一组热传感器元件（16）由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基片（46）形成。 第一层金属触点（60）被形成以限定衬底（46）的掩模（61）和未屏蔽（68）区域。 第二层金属触点（62）形成在第一层触点（60）上。 形成辐射蚀刻掩模层（66）以封装第二层触点（62）的暴露部分。 形成干蚀刻掩模层（74）以封装第一层触点（60）和辐射蚀刻掩模层（66）的暴露部分。 使用干蚀刻工艺蚀刻每个未掩模区域（68）的初始部分。 未掩蔽区域（68）的剩余部分暴露于蚀刻剂（70）并用电磁能照射，以显着增加其余部分和蚀刻剂（70）之间的反应性。 在这种照射期间，蚀刻剂（70）基本上比第一层触点（60）和辐射蚀刻掩模层（66）更快地蚀刻剩余部分。
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公开(公告)号：US5746930A
公开(公告)日：1998-05-05
申请号：US368068
申请日：1995-01-03
摘要： An array of thermal sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).
摘要翻译： 热敏元件阵列（16）可以由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基片（46）形成。 第一层导电触头（60）被形成以限定衬底（46）的一部分屏蔽（61）和未屏蔽（68）区域。 可以在第一层触点（60）上形成第二层导电触点（62）。 形成掩模层（66）以封装第二层触点（62）的暴露部分。 未掩蔽区域（68）暴露于蚀刻剂（70）并被照射以显着增加未掩模区域（68）和蚀刻剂（70）之间的反应性，使得在照射期间，蚀刻剂（70）去除未掩蔽区域（68） ）比第一层触点（60）和掩模层（66）快得多。
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公开(公告)号：US5603848A
公开(公告)日：1997-02-18
申请号：US367641
申请日：1995-01-03
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译： 使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。 可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。 然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53） ）和触点（49,56,64）。
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公开(公告)号：US5792377A
公开(公告)日：1998-08-11
申请号：US460281
申请日：1995-06-02
摘要： An array of thermal sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).
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公开(公告)号：US06177351B1
公开(公告)日：2001-01-23
申请号：US09218936
申请日：1998-12-22
IPC分类号： H01L21302
CPC分类号： H01L21/76831 , H01L21/0332 , H01L21/31122 , H01L21/76802 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/7687 , H01L21/76877 , H01L27/10814 , H01L27/10882 , H01L27/10894 , H01L28/55
摘要： A method and structure for etching a thin film perovskite layer (e.g., barium strontium titanate 836) overlying a second material without substantially etching the second material. The method comprises forming a substantially-silicon-free dielectric etchstop layer (e.g., aluminum nitride 858) on a second dielectric layer comprising silicon (e.g., silicon dioxide 818), depositing the perovskite layer over the etchstop layer, forming a mask layer (e.g., photoresist 842) over the perovsklte layer, patterning and removing portions of the mask layer to form a desired pattern, and etching portions of the perovskite layer not covered by the mask layer, whereby the etching stops on the etchstop layer. The structure comprises a substantially-silicon-free dielectric etchstop layer overlying a second dielectric layer comprising silicon, and a perovskite layer having a desired pattern and comprising an etched side overlying a substantially unetched portion of the etchstop layer.
摘要翻译： 用于蚀刻覆盖第二材料而不实质蚀刻第二材料的薄膜钙钛矿层（例如，钛酸钡锶836）的方法和结构。 该方法包括在包括硅的第二介电层（例如，二氧化硅818）上形成基本上无硅的电介质蚀刻阻挡层（例如，氮化铝858），在蚀刻阻挡层上沉积钙钛矿层，形成掩模层（例如， ，光致抗蚀剂842），图案化和去除掩模层的部分以形成期望的图案，以及蚀刻未被掩模层覆盖的钙钛矿层的部分，由此在蚀刻停止层上停止蚀刻。 该结构包括覆盖包括硅的第二介电层的基本上无硅的电介质蚀刻阻挡层，以及具有期望图案的钙钛矿层，并且包括覆盖蚀刻阻挡层的基本未蚀刻部分的蚀刻侧。
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公开(公告)号：US5626773A
公开(公告)日：1997-05-06
申请号：US367659
申请日：1995-01-03
IPC分类号： G01J1/02 , G01J5/34 , H01L21/302 , H01L21/3065 , H01L27/14 , H01L37/02 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/00
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/942
摘要： An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).
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公开(公告)号：US5426304A
公开(公告)日：1995-06-20
申请号：US182865
申请日：1994-01-13
CPC分类号： H01L37/02
摘要： In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a corresponding focal plane array (30, 130, and 230) of thermal sensors (40, 140, and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flowpath (V.sub.s) for the respective thermal sensor (40 and 240). The mesa conductors (56, 58, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242 and 243) having a void space (277 and 279) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30, 130 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).
摘要翻译： 在示例性热成像系统（20,120,220和320）中，热隔离结构（50和150）设置在集成电路衬底（70和170）上，用于电连接和机械地结合相应的焦平面阵列（30 ，130和230）热传感器（40,140和240）。 每个台面型结构（52,54和152）包括从台面型结构（52,54和152）的顶部延伸到相邻接触垫的至少一个台面导体（56,58,156和158） （72和74）。 台面导体（56,58,156和158）为相应的热传感器（40和240）提供偏压（VB）和相应的热传感器（40和240）的信号流路（Vs）。 台面导体（56,58,156和158）可用于向具有空隙空间（277和279）或一对铁电元件（42）的单个铁电元件（242和243）提供偏置电压（VB） 和44）。 当焦平面阵列（30,130和230）被结合到相应的台面型结构（52,54和152）阵列时，热隔离但是导电的路径被提供在电极（43和45）之间 热传感器（40和240）以及集成电路基板（70和74）的相应接触焊盘（72和172）。
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公开(公告)号：US5436450A
公开(公告)日：1995-07-25
申请号：US182268
申请日：1994-01-13
CPC分类号： H01L37/02
摘要： In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a focal plane array (30 and 230) of thermal sensors (40 and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flow path (V.sub.S) for the respective thermal sensor (40 and 240). The mesa conductors (56, 56, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).
摘要翻译： 在示例性热成像系统（20,120,220和320）中，热隔离结构（50和150）设置在集成电路基板（70和170）上，用于电连接和机械地结合焦平面阵列（30和 230）的热传感器（40和240）。 每个台面型结构（52,54和152）包括从台面型结构（52,54和152）的顶部延伸到相邻接触垫的至少一个台面导体（56,58,156和158） （72和74）。 台面导体（56,58,156和158）为相应的热传感器（40和240）提供偏压（VB）和相应的热传感器（40和240）的信号流路（VS）。 台面导体（56,56,156和158）可用于向单个铁电元件（242）或一对铁电元件（42和44）提供偏置电压（VB）。 当焦平面阵列（30和230）被结合到对应的台面型结构（52,54和152）阵列时，在热传感器的电极（43和45）之间提供热隔离但是导电的路径 （40和240）以及集成电路基板（70和74）的对应的接触垫（72和172）。
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公开(公告)号：US5705041A
公开(公告)日：1998-01-06
申请号：US225601
申请日：1994-04-07
CPC分类号： H01L37/02 , C23C14/021
摘要： A method of improving the responsivity of a pyroelectric device including providing a pyroelectric element of less than maximum theoretical density having holes therein extending to a surface of the element and having contaminants at the surface (22), cleaning the contaminants from the surface and metallizing the surface prior to contaminant reformation on the surface. The pyroelectric element is preferably a ferroelectric element and preferably barium strontium titanate. The step of cleaning can be by oxygen plasma, acid etch or a combination thereof. When the combination of cleaning steps is used, the step of cleaning comprises etching the surface and then oxygen cleaning the surface.
摘要翻译： 一种提高热电装置的响应度的方法，包括提供小于最大理论密度的热电元件，其中具有孔，其中延伸到元件的表面并在表面（22）处具有污染物，从表面清洁污染物并金属化 表面污染物重新形成前的表面。 热电元件优选为铁电元件，优选为钛酸钡锶。 清洁的步骤可以是氧等离子体，酸蚀刻或其组合。 当使用清洁步骤的组合时，清洁步骤包括蚀刻表面，然后对表面进行氧气清洁。
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