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公开(公告)号：US5654580A
公开(公告)日：1997-08-05
申请号：US464981
申请日：1995-06-05
IPC分类号： C23F1/02 , G01J5/20 , H01L37/02 , H01L31/058
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译： 使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。 可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。 然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53） ）和触点（49,56,64）。
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2.发明授权Structure and method including dry etching techniques for forming an array of thermal sensitive elements 失效包括用于形成热敏元件阵列的干蚀刻技术的结构和方法
公开(公告)号：US5647946A
公开(公告)日：1997-07-15
申请号：US463170
申请日：1995-06-05
IPC分类号： G01J1/02 , G01J5/34 , H01L21/302 , H01L21/3065 , H01L27/14 , H01L37/02 , H01L21/00
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/942
摘要： An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).
摘要翻译： 一组热传感器元件（16）由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基片（46）形成。 第一层金属触点（60）被形成以限定衬底（46）的掩模（61）和未屏蔽（68）区域。 第二层金属触点（62）形成在第一层触点（60）上。 形成辐射蚀刻掩模层（66）以封装第二层触点（62）的暴露部分。 形成干蚀刻掩模层（74）以封装第一层触点（60）和辐射蚀刻掩模层（66）的暴露部分。 使用干蚀刻工艺蚀刻每个未掩模区域（68）的初始部分。 未掩蔽区域（68）的剩余部分暴露于蚀刻剂（70）并用电磁能照射，以显着增加其余部分和蚀刻剂（70）之间的反应性。 在这种照射期间，蚀刻剂（70）基本上比第一层触点（60）和辐射蚀刻掩模层（66）更快地蚀刻剩余部分。
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公开(公告)号：US5746930A
公开(公告)日：1998-05-05
申请号：US368068
申请日：1995-01-03
摘要： An array of thermal sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).
摘要翻译： 热敏元件阵列（16）可以由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基片（46）形成。 第一层导电触头（60）被形成以限定衬底（46）的一部分屏蔽（61）和未屏蔽（68）区域。 可以在第一层触点（60）上形成第二层导电触点（62）。 形成掩模层（66）以封装第二层触点（62）的暴露部分。 未掩蔽区域（68）暴露于蚀刻剂（70）并被照射以显着增加未掩模区域（68）和蚀刻剂（70）之间的反应性，使得在照射期间，蚀刻剂（70）去除未掩蔽区域（68） ）比第一层触点（60）和掩模层（66）快得多。
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公开(公告)号：US5603848A
公开(公告)日：1997-02-18
申请号：US367641
申请日：1995-01-03
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译： 使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。 可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。 然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53） ）和触点（49,56,64）。
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公开(公告)号：US5792377A
公开(公告)日：1998-08-11
申请号：US460281
申请日：1995-06-02
摘要： An array of thermal sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).
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公开(公告)号：US06177351B1
公开(公告)日：2001-01-23
申请号：US09218936
申请日：1998-12-22
IPC分类号： H01L21302
CPC分类号： H01L21/76831 , H01L21/0332 , H01L21/31122 , H01L21/76802 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/7687 , H01L21/76877 , H01L27/10814 , H01L27/10882 , H01L27/10894 , H01L28/55
摘要： A method and structure for etching a thin film perovskite layer (e.g., barium strontium titanate 836) overlying a second material without substantially etching the second material. The method comprises forming a substantially-silicon-free dielectric etchstop layer (e.g., aluminum nitride 858) on a second dielectric layer comprising silicon (e.g., silicon dioxide 818), depositing the perovskite layer over the etchstop layer, forming a mask layer (e.g., photoresist 842) over the perovsklte layer, patterning and removing portions of the mask layer to form a desired pattern, and etching portions of the perovskite layer not covered by the mask layer, whereby the etching stops on the etchstop layer. The structure comprises a substantially-silicon-free dielectric etchstop layer overlying a second dielectric layer comprising silicon, and a perovskite layer having a desired pattern and comprising an etched side overlying a substantially unetched portion of the etchstop layer.
摘要翻译： 用于蚀刻覆盖第二材料而不实质蚀刻第二材料的薄膜钙钛矿层（例如，钛酸钡锶836）的方法和结构。 该方法包括在包括硅的第二介电层（例如，二氧化硅818）上形成基本上无硅的电介质蚀刻阻挡层（例如，氮化铝858），在蚀刻阻挡层上沉积钙钛矿层，形成掩模层（例如， ，光致抗蚀剂842），图案化和去除掩模层的部分以形成期望的图案，以及蚀刻未被掩模层覆盖的钙钛矿层的部分，由此在蚀刻停止层上停止蚀刻。 该结构包括覆盖包括硅的第二介电层的基本上无硅的电介质蚀刻阻挡层，以及具有期望图案的钙钛矿层，并且包括覆盖蚀刻阻挡层的基本未蚀刻部分的蚀刻侧。
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公开(公告)号：US5626773A
公开(公告)日：1997-05-06
申请号：US367659
申请日：1995-01-03
IPC分类号： G01J1/02 , G01J5/34 , H01L21/302 , H01L21/3065 , H01L27/14 , H01L37/02 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/00
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/942
摘要： An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).
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8.发明授权Donor doped perovskites for thin-film ferroelectric and pyroelectric devices 失效供体掺杂的钙钛矿用于薄膜铁电和热释电装置
公开(公告)号：US5888659A
公开(公告)日：1999-03-30
申请号：US477722
申请日：1995-06-07
IPC分类号： C04B35/465 , B32B17/00
CPC分类号： C04B35/465
摘要： The invention forms improved ferroelectric (or pyroelectric) material by doping an intrinsic perovskite material having an intrinsic ferroelectric (or pyroelectric) critical grain size with one or more donor dopants, then forming a layer of the donor doped perovskite material having an average grain size less than the intrinsic ferroelectric (or pyroelectric) critical gran size whereby the remanent polarization (or pyroelectric figure of merit) of the layer is substantially greater than the remanent polarization (or pyroelectric figure of merit) of the intrinsic perovskite material with an average grain size similar to the average grain size of the layer. The critical ferroelectric (or pyroelectric) grain size, as used herein, means the largest grain size such that the remanent polarization (or pyroelectric figure of merit) starts to rapidly decrease with decreasing grain sizes. Preferably, the donor doped perovskite material is further doped with one or more acceptor dopants to form a donor acceptor doped perovskite material whereby the resistivity is substantially increased. Preferably, the intrinsic perovskite material has a chemical composition AB03, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements. Structures containing an improved ferroelectric (or pyroelectric) material include a layer of donor doped perovskite material with average grain size less than the intrinsic ferroelectric (or pyroelectric) critical grain size formed on the surface of a substrate. Other structures include such a layer of donor doped material interposed between two electrically conducting layers.
摘要翻译： 本发明通过将具有本征铁电（或热电）临界晶粒尺寸的固有钙钛矿材料与一种或多种施主掺杂剂掺杂形成改进的铁电（或热释电）材料，然后形成具有平均晶粒尺寸的施主掺杂钙钛矿材料层 比本征铁电（或热电）临界颗粒大小，其中层的剩余极化（或热释电特性）基本上大于固有钙钛矿材料的剩余极化（或热释电特性），其平均晶粒尺寸类似 到该层的平均晶粒尺寸。 如本文所用，临界铁电（或热电）晶粒尺寸是指最大的晶粒尺寸，使得剩余极化（或热释电品质）开始随着晶粒尺寸的减小而迅速降低。 优选地，施主掺杂的钙钛矿材料进一步掺杂有一种或多种受体掺杂剂以形成掺杂掺杂的钙钛矿材料的受体掺杂物，由此电阻率显着增加。 优选地，本征钙钛矿材料具有化学组成AB03，其中A是一个或多个一价，二价或三价元素，B是一种或多种五价，四价，三价或二价元素。 包含改进的铁电（或热释电）材料的结构包括施主掺杂的钙钛矿材料层，其平均晶粒尺寸小于在衬底表面上形成的本征铁电（或热电）临界晶粒尺寸。 其他结构包括介于两个导电层之间的施主掺杂材料层。
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9.发明授权Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics 失效电极包括用于钙钛矿电介质的导电钙钛矿种子层
公开(公告)号：US5626906A
公开(公告)日：1997-05-06
申请号：US604268
申请日：1996-02-21
摘要： A preferred embodiment of this invention comprises a perovskite-seed layer (e.g. calcium ruthenate 40) between a conductive oxide layer (e.g. ruthenium oxide 36) and a perovskite dielectric material (e.g. barium strontium titanate 42), wherein the perovskite-seed layer and the conductive oxide layer each comprise the same metal. The metal should be conductive in its metallic state and should remain conductive when partially or fully oxidized. Generally, the perovskite-seed layer has a perovskite or perovskite-like crystal structure and lattice parameters which are similar to the perovskite dielectric layer formed thereon. At a given deposition temperature, the crystal quality and other properties of the perovskite dielectric will generally be enhanced by depositing it on a surface having a similar crystal structure. Undesirable crystal structure formation will generally be minimized and lower processing temperatures may be used to deposit the perovskite dielectric layer. Another benefit of this electrode system is that the perovskite-seed layer should do little or no reduction of the perovskite dielectric layer.
摘要翻译： 本发明的优选实施方案包括在导电氧化物层（例如氧化钌36）和钙钛矿电介质材料（例如钛酸钡锶42）之间的钙钛矿种子层（例如，钌酸钙40），其中钙钛矿种子层和 导电氧化物层各自包含相同的金属。 金属应在金属状态下导电，并且当部分或完全氧化时应保持导电性。 通常，钙钛矿种子层具有类似于其上形成的钙钛矿电介质层的钙钛矿或钙钛矿型晶体结构和晶格参数。 在给定的沉积温度下，钙钛矿电介质的晶体质量和其它性质通常会通过将其沉积在具有类似晶体结构的表面上来增强。 通常将不期望的晶体结构形成最小化，并且可以使用较低的加工温度来沉积钙钛矿电介质层。 该电极系统的另一个优点是钙钛矿种子层应该很少或不会减少钙钛矿电介质层。
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10.发明授权Semiconductor structures using high-dielectric-constant materials and an adhesion layer 失效使用高介电常数材料和粘附层的半导体结构
公开(公告)号：US5612574A
公开(公告)日：1997-03-18
申请号：US476948
申请日：1995-06-06
IPC分类号： H01L21/3205 , H01L21/02 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L23/52 , H01L23/522 , H01L27/04 , H01L27/108 , H01L29/12 , H01G4/10 , H01L29/68 , H01L29/92
CPC分类号： H01L27/10852 , H01L28/55 , H01L28/60
摘要： A semiconductor device (10) is illustrated, which is formed on an active region (14) of a semiconductor substrate (12). Device (10) comprises a conductive plug (20) and a barrier layer (22) formed in an opening in an interlevel isolation layer (18). An inner electrode (24) is caused to adhere to the interlevel isolation layer (18) through the use of an adhesion layer (26). High-dielectric-constant layer (28) and an outer electrode (30) are formed outwardly from inner electrode (24).
摘要翻译： 示出了半导体器件（10），其形成在半导体衬底（12）的有源区（14）上。 装置（10）包括形成在层间隔离层（18）中的开口中的导电塞（20）和阻挡层（22）。 通过使用粘合层（26）使内部电极（24）粘附到层间隔离层（18）。 高介电常数层（28）和外电极（30）从内电极（24）向外形成。
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