公开(公告)号：US08848339B2

公开(公告)日：2014-09-30

申请号：US13615650

申请日：2012-09-14

申请人： Hsieh-Ho Tsai ,  Yu-Lin Hsin ,  Yu-Ming Lin ,  Li-Key Chen ,  Mei-Hua Wang ,  Chih-Kuang Chang

发明人： Hsieh-Ho Tsai ,  Yu-Lin Hsin ,  Yu-Ming Lin ,  Li-Key Chen ,  Mei-Hua Wang ,  Chih-Kuang Chang

IPC分类号： H01G9/00 ,  H01G9/145

CPC分类号： H01G11/24 ,  H01G11/28 ,  H01G11/32 ,  H01G11/86 ,  Y02E60/13

摘要： A capacitor and a manufacturing method thereof are provided. Two electrodes are disposed opposite to each other. Two electrode protection layers are respectively disposed on inner sides of the electrodes and include carbon particles each covered and bonded with a polymer shell. Active carbon layers are disposed on opposite inner sides of the electrode protection layers. The separator is disposed between the active carbon layers. The electrolyte fills between the electrode protection layers. The polymer shells of each electrode protection layer are bonded to the surface of the corresponding electrode by first and second functional groups. The first functional groups include thiol groups. The second functional groups include epoxy groups or carboxylic groups. The electrode protection layers serve as adhesion layers between the active carbon layers and the electrodes, and protect the electrodes from being corroded by the acid electrolyte solution.

摘要翻译： 提供电容器及其制造方法。 两个电极彼此相对设置。 两个电极保护层分别设置在电极的内侧，并且包括各自覆盖并与聚合物壳结合的碳颗粒。 活性碳层设置在电极保护层的相对的内侧。 分离器设置在活性碳层之间。 电解质填充在电极保护层之间。 每个电极保护层的聚合物壳通过第一和第二官能团结合到相应电极的表面。 第一官能团包括硫醇基团。 第二官能团包括环氧基或羧基。 电极保护层用作活性碳层和电极之间的粘合层，并且保护电极免受酸性电解质溶液的腐蚀。

公开(公告)号：US20130155578A1

公开(公告)日：2013-06-20

申请号：US13615650

申请日：2012-09-14

申请人： Hsieh-Ho Tsai ,  Yu-Lin Hsin ,  Yu-Ming Lin ,  Li-Key Chen ,  Mei-Hua Wang ,  Chih-Kuang Chang

发明人： Hsieh-Ho Tsai ,  Yu-Lin Hsin ,  Yu-Ming Lin ,  Li-Key Chen ,  Mei-Hua Wang ,  Chih-Kuang Chang

IPC分类号： H01G9/00 ,  H01G9/042

CPC分类号： H01G11/24 ,  H01G11/28 ,  H01G11/32 ,  H01G11/86 ,  Y02E60/13

摘要： A capacitor and a manufacturing method thereof are provided. Two electrodes are disposed opposite to each other. Two electrode protection layers are respectively disposed on inner sides of the electrodes and include carbon particles each covered and bonded with a polymer shell. Active carbon layers are disposed on opposite inner sides of the electrode protection layers. The separator is disposed between the active carbon layers. The electrolyte fills between the electrode protection layers. The polymer shells of each electrode protection layer are bonded to the surface of the corresponding electrode by first and second functional groups. The first functional groups include thiol groups. The second functional groups include epoxy groups or carboxylic groups. The electrode protection layers serve as adhesion layers between the active carbon layers and the electrodes, and protect the electrodes from being corroded by the acid electrolyte solution.

摘要翻译： 提供电容器及其制造方法。 两个电极彼此相对设置。 两个电极保护层分别设置在电极的内侧，并且包括各自覆盖并与聚合物壳结合的碳颗粒。 活性碳层设置在电极保护层的相对的内侧。 分离器设置在活性碳层之间。 电解质填充在电极保护层之间。 每个电极保护层的聚合物壳通过第一和第二官能团结合到相应电极的表面。 第一官能团包括硫醇基团。 第二官能团包括环氧基或羧基。 电极保护层用作活性碳层和电极之间的粘合层，并且保护电极免受酸性电解质溶液的腐蚀。

公开(公告)号：US20120237748A1

公开(公告)日：2012-09-20

申请号：US13206944

申请日：2011-08-10

申请人： Hong-Ping LIN ,  Yu-Ming Lin ,  Hsieh-Ho Tsai ,  Likey Chen

发明人： Hong-Ping LIN ,  Yu-Ming Lin ,  Hsieh-Ho Tsai ,  Likey Chen

IPC分类号： C01B31/02 ,  B32B3/26

CPC分类号： B32B3/26 ,  B32B2313/04 ,  B32B2457/16 ,  C01B32/05 ,  H01G11/24 ,  H01G11/34 ,  Y02E60/13

摘要： An embodiment of the disclosure provides a manufacturing method of a porous carbon material, which includes: dissolving a surfactant and a carbon source material in a solvent to form an organic template precursor solution; preparing a silicate aqueous solution; pouring the organic template precursor solution into the silicate aqueous solution to precipitate out an intermediate, wherein the intermediate includes the surfactant, the carbon source material and a silicon oxide template; heating the intermediate to carbonize the intermediate; and removing the silicon oxide template to form a porous carbon material. Another embodiment of the disclosure provides a porous carbon material.

摘要翻译： 本发明的一个实施方案提供了一种多孔碳材料的制造方法，其包括：将表面活性剂和碳源材料溶解在溶剂中以形成有机模板前体溶液; 制备硅酸盐水溶液; 将有机模板前体溶液倒入硅酸盐水溶液中沉淀出中间体，其中中间体包括表面活性剂，碳源材料和氧化硅模板; 加热中间体以使中间体碳化; 并除去氧化硅模板以形成多孔碳材料。 本公开的另一个实施方案提供了一种多孔碳材料。

公开(公告)号：US08926853B2

公开(公告)日：2015-01-06

申请号：US13592370

申请日：2012-08-23

申请人： Xin Zhao ,  Yu-Ming Lin

发明人： Xin Zhao ,  Yu-Ming Lin

IPC分类号： B44C1/22 ,  B05D3/10

CPC分类号： H01M4/133 ,  B82Y30/00 ,  H01M4/96 ,  H01M8/04216 ,  H01M10/0525 ,  Y10T29/49115 ,  Y10T29/49885 ,  Y10T428/30

摘要： Aspects of the invention are directed to a method of forming graphene structures. Initially, a cluster of particles is received. The cluster of particles comprises a plurality of particles with each particle in the plurality of particles contacting one or more other particles in the plurality of particles. Subsequently, one or more layers are deposited on the cluster of particles with the one or more layers comprising graphene. The plurality of particles are then etched away without substantially etching the deposited one or more layers. Lastly, the remaining one or more layers are dried. The resultant graphene structures are particularly resistant to the negative effects of aggregation and compaction.

摘要翻译： 本发明的方面涉及形成石墨烯结构的方法。 最初，接收到一群粒子。 颗粒簇包括多个颗粒，多个颗粒中的每个颗粒与多个颗粒中的一个或多个其它颗粒接触。 随后，一层或多层沉积在颗粒簇上，其中一层或多层包含石墨烯。 然后蚀刻掉多个颗粒，而基本上不蚀刻沉积的一个或多个层。 最后，将剩余的一层或多层干燥。 所得到的石墨烯结构特别抵抗聚集和压实的负面影响。

公开(公告)号：US08803130B2

公开(公告)日：2014-08-12

申请号：US13492097

申请日：2012-06-08

申请人： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

发明人： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

IPC分类号： H01L29/06

CPC分类号： H01L29/1606 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/7781 ,  Y10S977/734

摘要： Graphene transistor devices and methods of their fabrication are disclosed. One such graphene transistor device includes source and drain electrodes and a gate structure including a dielectric sidewall spacer that is disposed between the source and drain electrodes. The device further includes a graphene layer that is adjacent to at least one of the source and drain electrodes, where an interface between the source/drain electrode(s) and the graphene layer maintains a consistent degree of electrical conductivity throughout the interface.

摘要翻译： 公开了石墨烯晶体管器件及其制造方法。 一种这样的石墨烯晶体管器件包括源电极和漏电极以及包括设置在源极和漏极之间的电介质侧壁间隔物的栅极结构。 该器件还包括与源极和漏极电极中的至少一个相邻的石墨烯层，其中源/漏电极和石墨烯层之间的界面在整个界面处保持一致的电导率。

公开(公告)号：US20140060726A1

公开(公告)日：2014-03-06

申请号：US13603786

申请日：2012-09-05

申请人： Yijing Yin Stehle ,  Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

发明人： Yijing Yin Stehle ,  Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

IPC分类号： B32B38/10 ,  B82Y40/00

CPC分类号： B32B37/26 ,  B32B2037/268 ,  B32B2457/00 ,  B82Y40/00

摘要： Aspects of the invention are directed to a method of forming a thin film adhered to a target substrate. The method comprises the steps of: (i) forming the thin film on a deposition substrate; (ii) depositing a support layer on the thin film; (iii) removing the deposition substrate without substantially removing the thin film and the support layer; (iv) drying the thin film and the support layer while the thin film is only adhered to the support layer; (v) placing the dried thin film and the dried support layer on the target substrate such that the thin film adheres to the target substrate; and (vi) removing the support layer without substantially removing the thin film and the target substrate.

摘要翻译： 本发明的方面涉及一种形成粘附到目标基底上的薄膜的方法。 该方法包括以下步骤：（i）在沉积衬底上形成薄膜; （ii）在薄膜上沉积支撑层; （iii）除去沉积基板，而基本不除去薄膜和支撑层; （iv）在薄膜仅粘附到支撑层的同时干燥薄膜和支撑层; （v）将干燥的薄膜和干燥的支撑层放置在目标基板上，使得薄膜粘附到目标基板; 和（vi）除去支撑层而基本上不去除薄膜和目标基底。

公开(公告)号：US20130207080A1

公开(公告)日：2013-08-15

申请号：US13369901

申请日：2012-02-09

申请人： Christos D. Dimitrakopoulos ,  Damon B. Farmer ,  Alfred Grill ,  Yu-Ming Lin ,  Deborah A. Neumayer ,  Dirk Pfeiffer ,  Wenjuan Zhu

发明人： Christos D. Dimitrakopoulos ,  Damon B. Farmer ,  Alfred Grill ,  Yu-Ming Lin ,  Deborah A. Neumayer ,  Dirk Pfeiffer ,  Wenjuan Zhu

IPC分类号： H01L29/775 ,  H01L21/336

CPC分类号： H01L21/0237 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02617 ,  H01L21/02661 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66045 ,  H01L29/7781 ,  H01L29/78684

摘要： A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.

摘要翻译： 在石墨烯层的最上表面上设置氮化硅层，然后在氮化硅层的最上表面上设置二氧化铪层。 氮化硅层用作二氧化铪层的润湿剂，从而防止在石墨烯层顶上形成不连续的二氧化铪塔。 共同形成低EOT双层栅极电介质的氮化硅层和二氧化铪层在石墨烯层的顶部呈现连续的形态。

公开(公告)号：US08455297B1

公开(公告)日：2013-06-04

申请号：US12831656

申请日：2010-07-07

申请人： Phaedon Avouris ,  Kuan-Neng Chen ,  Yu-Ming Lin

发明人： Phaedon Avouris ,  Kuan-Neng Chen ,  Yu-Ming Lin

IPC分类号： H01L51/40

CPC分类号： H01L21/768 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/50 ,  H01L21/6835 ,  H01L21/76885 ,  H01L23/4827 ,  H01L2221/1094 ,  H01L2221/68359 ,  H01L2224/83894 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01046

摘要： Techniques for fabricating carbon nanotube-based devices are provided. In one aspect, a method for fabricating a carbon nanotube-based integrated circuit is provided. The method comprises the following steps. A first wafer comprising carbon nanotubes is provided. A second wafer comprising one or more device elements is provided. One or more of the carbon nanotubes are connected with one or more of the device elements by bonding the first wafer and the second wafer together. A carbon nanotube-based integrated circuit is also provided.

摘要翻译： 提供了制造基于碳纳米管的器件的技术。 一方面，提供一种制造碳纳米管集成电路的方法。 该方法包括以下步骤。 提供了包括碳纳米管的第一晶片。 提供包括一个或多个器件元件的第二晶片。 一个或多个碳纳米管通过将第一晶片和第二晶片结合在一起而与一个或多个器件元件连接。 还提供了一种基于碳纳米管的集成电路。

公开(公告)号：US08344358B2

公开(公告)日：2013-01-01

申请号：US12876454

申请日：2010-09-07

申请人： Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

发明人： Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

IPC分类号： H01L29/76

CPC分类号： H01L29/1606 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78684

摘要： A graphene-based field effect transistor includes source and drain electrodes that are self-aligned to a gate electrode. A stack of a seed layer and a dielectric metal oxide layer is deposited over a patterned graphene layer. A conductive material stack of a first metal portion and a second metal portion is formed above the dielectric metal oxide layer. The first metal portion is laterally etched employing the second metal portion, and exposed portions of the dielectric metal oxide layer are removed to form a gate structure in which the second metal portion overhangs the first metal portion. The seed layer is removed and the overhang is employed to shadow proximal regions around the gate structure during a directional deposition process to form source and drain electrodes that are self-aligned and minimally laterally spaced from edges of the gate electrode.

摘要翻译： 基于石墨烯的场效应晶体管包括与栅电极自对准的源极和漏极。 在图案化的石墨烯层上沉积种子层和电介质金属氧化物层的堆叠。 第一金属部分和第二金属部分的导电材料堆叠形成在电介质金属氧化物层的上方。 使用第二金属部分横向蚀刻第一金属部分，去除电介质金属氧化物层的暴露部分以形成其中第二金属部分悬垂在第一金属部分上的栅极结构。 移除晶种层并且在定向沉积工艺期间使用突出部来遮蔽栅极结构周围的近端区域，以形成与栅电极的边缘自对准且最小程度地横向间隔的源电极和漏电极。

公开(公告)号：US20120326129A1

公开(公告)日：2012-12-27

申请号：US13604254

申请日：2012-09-05

申请人： Yu-Ming Lin ,  Jeng-Bang Yau

发明人： Yu-Ming Lin ,  Jeng-Bang Yau

IPC分类号： H01L29/78

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L27/124 ,  H01L29/0665 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78618 ,  H01L29/78684

摘要： An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped graphene, the doped graphene comprising a contact of the transistor; and a gate of the transistor, the gate comprising a carbon nanotube film. A method of fabricating an integrated circuit comprising graphene and carbon nanotubes, includes forming a graphene layer; doping a portion of the graphene layer, resulting in doped graphene and undoped graphene; forming a carbon nanotube film; and etching the carbon nanotube film to form a gate of a transistor, wherein the transistor further comprises a channel comprising the undoped graphene and a contact comprising the doped graphene. A transistor includes a gate, the gate comprising a carbon nanotube film; a channel, the channel comprising undoped graphene; and a contact, the contact comprising doped graphene.

摘要翻译： 集成电路包括石墨烯层，所述石墨烯层包括未掺杂的石墨烯的区域，所述未掺杂的石墨烯包括晶体管的沟道和掺杂的石墨烯的区域，所述掺杂的石墨烯包括所述晶体管的接触; 和晶体管的栅极，所述栅极包括碳纳米管膜。 一种制造包括石墨烯和碳纳米管的集成电路的方法，包括形成石墨烯层; 掺杂一部分石墨烯层，导致掺杂的石墨烯和未掺杂的石墨烯; 形成碳纳米管膜; 以及蚀刻所述碳纳米管膜以形成晶体管的栅极，其中所述晶体管还包括包含所述未掺杂的石墨烯的沟道和包含所述掺杂石墨烯的接触。 晶体管包括栅极，栅极包括碳纳米管膜; 通道，通道包括未掺杂的石墨烯; 和触点，所述触点包括掺杂的石墨烯。