公开(公告)号：US10297550B2

公开(公告)日：2019-05-21

申请号：US12774558

申请日：2010-05-05

申请人： Hsien-Pin Hu ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Jing-Cheng Lin ,  Jiun Ren Lai ,  Yung-Chi Lin

发明人： Hsien-Pin Hu ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Jing-Cheng Lin ,  Jiun Ren Lai ,  Yung-Chi Lin

IPC分类号： H01L23/538 ,  H01L23/488 ,  H01L21/56 ,  H01L21/683 ,  H01L23/14 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065

摘要： A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

公开(公告)号：US20110193221A1

公开(公告)日：2011-08-11

申请号：US12774558

申请日：2010-05-05

申请人： Hsien-Pin Hu ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Jing-Cheng Lin ,  Jiun Ren Lai ,  Yung-Chi Lin

发明人： Hsien-Pin Hu ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Jing-Cheng Lin ,  Jiun Ren Lai ,  Yung-Chi Lin

IPC分类号： H01L23/538 ,  H01L21/60 ,  H01L21/50 ,  H01L23/488

CPC分类号： H01L23/5389 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0652 ,  H01L2221/68345 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/81 ,  H01L2924/00012

摘要： A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

摘要翻译： 一种装置包括插入件，其包括具有顶表面的基板。 互连结构形成在衬底的顶表面上，其中互连结构包括至少一个电介质层，以及至少一个电介质层中的金属特征。 多个穿通基板通孔（TSV）在基板中并电耦合到互连结构。 第一个模具结束并粘贴到插入器上。 第二管芯被结合到插入件上，其中第二管芯在互连结构之下。

公开(公告)号：US20110193235A1

公开(公告)日：2011-08-11

申请号：US12775186

申请日：2010-05-06

申请人： Hsien-Pin Hu ,  Chen-Hua Yu ,  Jiun Ren Lai ,  Ming-Fa Chen

发明人： Hsien-Pin Hu ,  Chen-Hua Yu ,  Jiun Ren Lai ,  Ming-Fa Chen

IPC分类号： H01L23/538

CPC分类号： H01L21/6835 ,  H01L23/3121 ,  H01L23/5389 ,  H01L24/16 ,  H01L25/0657 ,  H01L2221/68345 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00012 ,  H01L2924/00

摘要： A device is formed to include an interposer having a top surface, and a bump on the top surface of the interposer. An opening extends from the top surface into the interposer. A first die is bonded to the bump. A second die is located in the opening of the interposer and bonded to the first die.

摘要翻译： 一种器件被形成为包括具有顶表面的插入件和位于插入器顶表面上的凸块。 开口从顶表面延伸到插入件中。 第一个模具结合到凸块上。 第二模具位于插入件的开口中并结合到第一模具。